BPW85 Silicon NPN Phototransistor Description BPW85 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard T-1 (o 3 mm) plastic package. Due to its waterclear epoxy the device is sensitive to visible and near infrared radiation. The viewing angle of 25 makes it insensible to ambient straylight. Features D D D D D D Fast response times High photo sensitivity Standard T-1 (o 3 mm ) clear plastic package Axial terminals 94 8396 Angle of half sensitivity = 25 Suitable for visible and near infrared radiation Applications Detector in electronic control and drive circuits Absolute Maximum Ratings Tamb = 25_C Parameter Collector Emitter Voltage Emitter Collector Voltage Collector Current Peak Collector Current Total Power Dissipation Junction Temperature Storage Temperature Range Soldering Temperature Thermal Resistance Junction/Ambient TELEFUNKEN Semiconductors Rev. A2, 15-Jul-96 Test Conditions x tp/T = 0.5, tp 10 ms Tamb 55 C x t x 3 s, 2 mm from case Symbol VCEO VECO IC ICM Ptot Tj Tstg Tsd RthJA Value 70 5 50 100 100 100 -55...+100 260 450 Unit V V mA mA mW C C C K/W 1 (6) BPW85 Basic Characteristics Tamb = 25_C Parameter Collector Emitter Breakdown Voltage Collector Dark Current Collector Emitter Capacitance Angle of Half Sensitivity Wavelength of Peak Sensitivity Range of Spectral Bandwidth Collector Emitter Saturation Voltage Turn-On Time Turn-Off Time Cut-Off Frequency Test Conditions IC = 1 mA Symbol V(BR)CEO VCE = 20 V, E = 0 VCE = 5 V, f = 1 MHz, E=0 Min 70 ICEO CCEO lp l0.5 Ee=1mW/cm2, l=950nm, IC=0.1mA VS=5V, IC=5mA, RL=100W VS=5V, IC=5mA, RL=100W VS=5V, IC=5mA, RL=100W Typ Max Unit V 1 3 25 850 620...980 200 nA pF deg nm nm V VCEsat 0.3 ton toff fc ms ms 2.0 2.3 180 kHz Type Dedicated Characteristics Tamb = 25_C Parameter Collector Light g Current Test Conditions Ee=1mW/cm2, l=950nm, VCE=5V Type BPW85A BPW85B BPW85C Symbol Ica Ica Ica Min 0.8 1.5 3.0 Typ 1.5 2.5 5.0 Max 2.5 4.0 8.0 Unit mA mA mA Typical Characteristics (Tamb = 25_C unless otherwise specified) 104 I CEO - Collector Dark Current ( nA ) P tot - Total Power Dissipation ( mW ) 125 100 75 RthJA 50 25 0 20 40 60 80 101 100 Tamb - Ambient Temperature ( C ) Figure 1. Total Power Dissipation vs. Ambient Temperature 2 (6) VCE=20V 102 100 0 94 8308 103 20 94 8304 40 60 80 100 Tamb - Ambient Temperature ( C ) Figure 2. Collector Dark Current vs. Ambient Temperature TELEFUNKEN Semiconductors Rev. A2, 15-Jul-96 BPW85 10 1.8 VCE=5V Ee=1mW/cm2 l=950nm 1.6 BPW 85 B Ica - Collector Light Current ( mA ) I ca rel - Relative Collector Current 2.0 1.4 1.2 1.0 0.8 0.6 0.5 mW/cm2 1 20 40 60 80 0.1 mW/cm2 0.05 mW/cm2 0.1 l=950nm 100 Tamb - Ambient Temperature ( C ) 94 8239 0.1 10 100 Figure 6. Collector Light Current vs. Collector Emitter Voltage 10 Ica - Collector Light Current ( mA ) 10 Ica - Collector Light Current ( mA ) 1 VCE - Collector Emitter Voltage ( V ) 94 8276 Figure 3. Relative Collector Current vs. Ambient Temperature BPW85B BPW85C 1 BPW85A 0.1 0.01 0.01 VCE=5V l=950nm 0.1 Ee - Irradiance ( 94 8271 mW / cm2 ) 0.2 mW/cm2 0.1 mW/cm2 0.05 mW/cm2 0.01 0.1 1 10 0.05 mW/cm2 0.1 BPW 85 C l=950nm 0.1 Figure 5. Collector Light Current vs. Collector Emitter Voltage 1 10 100 VCE - Collector Emitter Voltage ( V ) Figure 7. Collector Light Current vs. Collector Emitter Voltage 100 VCE - Collector Emitter Voltage ( V ) TELEFUNKEN Semiconductors Rev. A2, 15-Jul-96 0.2 mW/cm2 0.1 mW/cm2 C CEO - Collector Emitter Capacitance ( pF ) 0.5 mW/cm2 0.1 1 94 8277 Ee=1 mW/cm2 1 0.5 mW/cm2 0.01 10 BPW 85 A l=950nm Ee=1 mW/cm2 10 1 Figure 4. Collector Light Current vs. Irradiance Ica - Collector Light Current ( mA ) 0.2 mW/cm2 0.01 0 94 8275 Ee=1 mW/cm2 10 f=1MHz 8 6 4 2 0 0.1 94 8294 1 10 100 VCE - Collector Emitter Voltage ( V ) Figure 8. Collector Emitter Capacitance vs. Collector Emitter Voltage 3 (6) 0 8 VCE=5V RL=100W l=950nm 6 S rel - Relative Sensitivity t on / t off - Turn on / Turn off Time ( m s ) BPW85 4 toff 2 10 20 30 40 1.0 0.9 50 0.8 60 70 0.7 ton 80 0 0 2 4 6 8 10 12 14 IC - Collector Current ( mA ) 94 8293 0.4 0.2 0 0.2 0.4 0.6 94 8295 Figure 11. Relative Radiant Sensitivity vs. Angular Displacement 1.0 0.8 0.6 0.4 0.2 S( l ) rel - Relative Spectral Sensitivity Figure 9. Turn On/Turn Off Time vs. Collector Current 0.6 0 400 94 8348 600 800 l - Wavelength ( nm ) 1000 Figure 10. Relative Spectral Sensitivity vs. Wavelength 4 (6) TELEFUNKEN Semiconductors Rev. A2, 15-Jul-96 BPW85 Dimensions in mm 96 12190 TELEFUNKEN Semiconductors Rev. A2, 15-Jul-96 5 (6) BPW85 Ozone Depleting Substances Policy Statement It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs). The Montreal Protocol ( 1987) and its London Amendments ( 1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 6 (6) TELEFUNKEN Semiconductors Rev. A2, 15-Jul-96