Semiconductor Components Industries, LLC, 2004
August, 2004 − Rev. 7 1Publication Order Number:
MMBZ5V6ALT1/D
MMBZ5V6ALT1 Series
Preferred Device
24 and 40 Watt Peak Power
Zener Transient Voltage
Suppressors
SOT−23 Dual Common Anode Zeners
for ESD Protection
These dual monolithic silicon Zener diodes are designed for
applications requiring transient overvoltage protection capability. They
are intended for use in voltage and ESD sensitive equipment such as
computers, printers, business machines, communication systems,
medical equipment a nd o ther a pplications. T heir d ual j unction c ommon
anode design protects two s eparate l ines u sing o nly o ne p ackage. T hese
devices are ideal for situations where board space is at a premium.
Features
Pb−Free Packages are Available
SOT−23 Package Allows Either Two Separate Unidirectional
Configurations or a Single Bidirectional Configuration
Working Peak Reverse Voltage Range − 3 V to 26 V
Standard Zener Breakdown Voltage Range − 5.6 V to 33 V
Peak Power − 24 or 40 Watts @ 1.0 ms (Unidirectional),
per Figure 5 Waveform
ESD Rating of Class N (exceeding 16 kV) per the Human
Body Model
Maximum Clamping Voltage @ Peak Pulse Current
Low Leakage < 5.0 A
Flammability Rating UL 94 V−O
Mechanical Characteristics
CASE: Void-free, transfer-molded, thermosetting plastic case
FINISH: Corrosion resistant finish, easily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260°C for 10 Seconds
Package designed for optimal automated board assembly
Small package size for high density applications
Available in 8 mm Tape and Reel
Use the Device Number to order the 7 inch/3,000 unit reel.
Replace the “T1” with “T3” in the Device Number to order the
13 inch/10,000 unit reel.
Preferred devices are recommended choices for future use
and best overall value.
SOT−23
CASE 318
STYLE 12
13
2
12
3xxx
MARKING
DIAGRAM
xxx = Device Code
M = Date Code
M
See specific marking information in the device marking
column of the table on page 3 of this data sheet.
DEVICE MARKING INFORMATION
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See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
MMBZ5V6ALT1 Series
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MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Power Dissipation @ 1.0 ms (Note 1) MMBZ5V6ALT1 thru MMBZ10VALT1
@ TL 25°C MMBZ12VALT1 thru MMBZ33VALT1 Ppk 24
40 Watts
Total Power Dissipation on FR−5 Board (Note 2) @ TA = 25°C
Derate above 25°C°PD°225
1.8 °mW°
mW/°C
Thermal Resistance Junction−to−Ambient RJA 556 °C/W
Total Power Dissipation on Alumina Substrate (Note 3) @ TA = 25°C
Derate above 25°C°PD°300
2.4 °mW
mW/°C
Thermal Resistance Junction−to−Ambient RJA 417 °C/W
Junction and Storage Temperature Range TJ, Tstg 55 to +150 °C
Lead Solder Temperature − Maximum (10 Second Duration) TL260 °C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. Non−repetitive current pulse per Figure 5 and derate above TA = 25°C per Figure 6.
2. FR−5 = 1.0 x 0.75 x 0.62 in.
3. Alumina = 0.4 x 0.3 x 0.024 in, 99.5% alumina.
*Other voltages may be available upon request.
ORDERING INFORMATION
Device Package Shipping
MMBZ5V6ALT1 SOT−23 3000 Tape & Reel
MMBZ5V6ALT1G SOT−23
(Pb−Free) 3000 Tape & Reel
MMBZ5V6ALT3 SOT−23 10,000 Tape & Reel
MMBZ5V6ALT3G SOT−23
(Pb−Free) 10,000 Tape & Reel
MMBZ6VxALT1 SOT−23 3000 Tape & Reel
MMBZ6VxALT1G SOT−23
(Pb−Free) 3000 Tape & Reel
MMBZ6VxALT3 SOT−23 10,000 Tape & Reel
MMBZ6VxALT3G SOT−23
(Pb−Free) 10,000 Tape & Reel
MMBZ9V1ALT1 SOT−23 3000 Tape & Reel
MMBZ9V1ALT1G SOT−23
(Pb−Free) 3000 Tape & Reel
MMBZ9V1ALT3 SOT−23 10,000 Tape & Reel
MMBZ9V1ALT13G SOT−23
(Pb−Free) 10,000 Tape & Reel
MMBZxxVALT1 SOT−23 3000 Tape & Reel
MMBZxxVALT1G SOT−23
(Pb−Free) 3000 Tape & Reel
MMBZxxVALT3 SOT−23 10,000 Tape & Reel
MMBZxxVALT3G SOT−23
(Pb−Free) 10,000 Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
Uni−Directional TVS
IPP
IF
V
I
IR
IT
VRWM
VCVBR VF
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ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3)
Symbol Parameter
IPP Maximum Reverse Peak Pulse Current
VCClamping Voltage @ IPP
VRWM Working Peak Reverse Voltage
IRMaximum Reverse Leakage Current @ VRWM
VBR Breakdown Voltage @ IT
ITTest Current
VBR Maximum Temperature Coefficient of VBR
IFForward Current
VFForward Voltage @ IF
ZZT Maximum Zener Impedance @ IZT
IZK Reverse Current
ZZK Maximum Zener Impedance @ IZK
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or Pins 2 and 3)
(VF = 0.9 V Max @ IF = 10 mA) 24 WATTS
Breakdown Voltage Max Zener
Impedance (Note 5) VC @ IPP
(Note 6)
Device
VRWM
IR @
VRWM VBR (Note 4) (V) @ IT
ZZT
@ IZT ZZK @ IZK VCIPP VBR
Device
Device
Marking Volts A Min Nom Max mA mA V A mV/C
MMBZ5V6AL 5A6 3.0 5.0 5.32 5.6 5.88 20 11 1600 0.25 8.0 3.0 1.26
MMBZ6V2AL 6A2 3.0 0.5 5.89 6.2 6.51 1.0 8.7 2.76 2.80
MMBZ6V8AL 6A8 4.5 0.5 6.46 6.8 7.14 1.0 9.6 2.5 3.4
MMBZ9V1AL 9A1 6.0 0.3 8.65 9.1 9.56 1.0 14 1.7 7.5
MMBZ10VAL 10A 6.5 0.3 9.50 10 10.5 1.0 14.2 1.7 7.5
(VF = 0.9 V Max @ IF = 10 mA) 40 WATTS
IR@
Breakdown Voltage VC @ IPP (Note 6)
Device
VRWM
I
R
@
VRWM VBR (Note 4) (V) @ ITVCIPP VBR
Device
Device
Marking Volts nA Min Nom Max mA V A mV/C
MMBZ12VAL 12A 8.5 200 11.40 12 12.60 1.0 17 2.35 7.5
MMBZ15VAL 15A 12 50 14.25 15 15.75 1.0 21 1.9 12.3
MMBZ18VAL 18A 14.5 50 17.10 18 18.90 1.0 25 1.6 15.3
MMBZ20VAL 20A 17 50 19.00 20 21.00 1.0 28 1.4 17.2
MMBZ27VAL 27A 22 50 25.65 27 28.35 1.0 40 1.0 24.3
MMBZ33VAL 33A 26 50 31.35 33 34.65 1.0 46 0.87 30.4
4. VBR measured at pulse test current IT at an ambient temperature of 25°C.
5. ZZT and ZZK are measured by dividing the AC voltage drop across the device by the AC current applied. The specified limits are for IZ(AC)
= 0.1 IZ(DC), with the AC frequency = 1.0 kHz.
6. Surge current waveform per Figure 5 and derate per Figure 6
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TYPICAL CHARACTERISTICS
−40 +50
18
Figure 1. Typical Breakdown Voltage
versus Temperature
(Upper curve for each voltage is bidirectional mode,
lower curve is unidirectional mode)
0TEMPERATURE (°C) +100 +150
15
12
9
6
3
0−40 +25
1000
Figure 2. Typical Leakage Current
versus Temperature
TEMPERATURE (°C)
+85 +125
100
10
1
0.1
0.01
BREAKDOWN VOLTAGE (VOLTS)
(VBR @ IT)
IR (nA)
Figure 3. Typical Capacitance versus Bias Voltage
(Upper curve for each voltage is unidirectional mode,
lower curve is bidirectional mode)
0 25 50 75 100 125 150 175
300
250
200
150
100
50
0
Figure 4. Steady State Power Derating Curve
TEMPERATURE (°C)
FR−5 BOARD
ALUMINA SUBSTRATE
01 23
320
280
240
160
120
40
0
C, CAPACITANCE (pF)
BIAS (V)
200
80 15 V
5.6 V
PD, POWER DISSIPATION (mW)
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TYPICAL CHARACTERISTICS
0.1 1 10 100 1000
1
10
100
Power is defined as VRSM x IZ(pk) where VRSM is
the clamping voltage at IZ(pk).
PW, PULSE WIDTH (ms)
UNIDIRECTIONAL
RECTANGULAR
WAVEFORM, TA = 25°C
BIDIRECTIONAL
MMBZ5V6ALT1
Figure 5. Pulse Waveform
VALUE (%)
100
50
001 234
t, TIME (ms)
Figure 6. Pulse Derating Curve
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAYS TO
50% OF IPP.
HALF VALUE IPP
2
tP
tr 10 s
PEAK VALUE IPP
100
90
80
70
60
50
40
30
20
10
00 25 50 75 100 125 150 175 200
TA, AMBIENT TEMPERATURE (°C)
Figure 7. Maximum Non−repetitive Surge
Power, Ppk versus PW Figure 8. Maximum Non−repetitive Surge
Power, Ppk(NOM) versus PW
0.1 1 10 100 1000
1
10
100
PW, PULSE WIDTH (ms)
UNIDIRECTIONAL
RECTANGULAR
WAVEFORM, TA = 25°C
BIDIRECTIONAL
MMBZ5V6ALT1
Power is defined as VZ(NOM) x IZ(pk) where
VZ(NOM) is the nominal Zener voltage measured at
the low test current used for voltage classification.
PEAK PULSE DERATING IN % OF PEAK
POWER OR CURRENT @ TA = 25°C
Ppk, PEAK SURGE POWER (W)
Ppk, PEAK SURGE POWER (W)
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TYPICAL COMMON ANODE APPLICATIONS
A quad junction common anode design in a SOT−23
package protects four separate lines using only one package.
This adds flexibility and creativity to PCB design especially
when board space is at a premium. Two simplified examples
of TVS applications are illustrated below.
MMBZ5V6ALT1
THRU
MMBZ33VALT1
KEYBOARD
TERMINAL
PRINTER
ETC.
FUNCTIONAL
DECODER
I/O
A
MMBZ5V6ALT1
THRU
MMBZ33VALT1
GND
Computer Interface Protection
B
C
D
Microprocessor Protection
I/O
RAM ROM
CLOCK
CPU
CONTROL BUS
ADDRESS BUS
DATA BUS
GND
VGG
VDD
MMBZ5V6ALT1
THRU
MMBZ33VALT1
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PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−09
ISSUE AH
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
mm
inches
SCALE 10:1
0.8
0.031
0.9
0.035
0.95
0.037
0.95
0.037
2.0
0.079
STYLE 12:
PIN 1. CATHODE
2. CATHODE
3. ANODE
DIM
AMIN MAX MIN MAX
MILLIMETERS
0.1102 0.1197 2.80 3.04
INCHES
B0.0472 0.0551 1.20 1.40
C0.0385 0.0498 0.99 1.26
D0.0140 0.0200 0.36 0.50
G0.0670 0.0826 1.70 2.10
H0.0040 0.0098 0.10 0.25
J0.0034 0.0070 0.085 0.177
K0.0180 0.0236 0.45 0.60
L0.0350 0.0401 0.89 1.02
S0.0830 0.0984 2.10 2.50
V0.0177 0.0236 0.45 0.60
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIUMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01, −02, AND −06 OBSOLETE, NEW
STANDARD 318−09.
1
3
2
AL
BS
VG
DH
C
KJ
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to any products herein. SCILLC makes no warranty , representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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MMBZ5V6ALT1/D
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