IDT70V261S25PFGI - Integrated Device Technology

DECEMBER 2001

DSC-3040/8

I/O

Control

Address

Decoder MEMORY

ARRAY

ARBITRATION

INTERRUPT

SEMAPHORE

LOGIC

Address

Decoder

I/O

Control

R/WL

BUSYL

A13L

A0L

3040 drw 01

UBL

LBL

CEL

OEL

I/O8L-I/O15L

I/O0L-I/O7L

CEL

OEL

R/WL

SEML

INTLM/S

R/WR

BUSYR

UBR

LBR

CER

OER

I/O8R-I/O15R

I/O0R-I/O7R

A13R

A0R

R/WR

SEMR

INTR

CER

OER

(2)

(1,2) (1,2)

(2)

14 14

IDT70V261S/L

HIGH-SPEED 3.3V

16K x 16 DUAL-PORT

STATIC RAM

Features

◆◆

◆True Dual-Ported memory cells which allow simultaneous

access of the same memory location

◆◆

◆High-speed access

– Commercial: 25/35/55ns (max.)

– Industrial: 25ns (max.)

◆◆

◆Low-power operation

– IDT70V261S

Active: 300mW (typ.)

Standby: 3.3mW (typ.)

– IDT70V261L

Active: 300mW (typ.)

Standby: 660

W (typ.)

◆◆

◆Separate upper-byte and lower-byte control for multiplexed

bus compatibility

◆◆

◆IDT70V261 easily expands data bus width to 32 bits or more

using the Master/Slave select when cascading more than

one device

◆◆

◆M/S = VIH for BUSY output flag on Master

M/S = VIL for BUSY input on Slave

◆◆

◆Interrupt Flag

◆◆

◆On-chip port arbitration logic

◆◆

◆Full on-chip hardware support of semaphore signaling

between ports

◆◆

◆Fully asynchronous operation from either port

◆◆

◆TTL-compatible, single 3.3V (±0.3V) power supply

◆◆

◆Available in a 100-pin TQFP, Thin Quad Plastic Flatpack

◆◆

◆Industrial temperature range (-40°C to +85°C) is available

for selected speed

Functional Block Diagram

NOTES:

1. (MASTER): BUSY is output; (SLAVE): BUSY is input.

2. BUSY and INT outputs are non-tri-stated push-pull.

6.42

IDT70V261S/L

High-Speed 16K x 16 Dual-Port Static RAM with Interrupt Industrial and Commercial Temperature Ranges

Description

The IDT70V261 is a high-speed 16K x 16 Dual-Port Static RAM. The

IDT70V261 is designed to be used as a stand-alone 256K-bit Dual-Port

RAM or as a combination MASTER/SLAVE Dual-Port RAM for 32-bit-or-

more word systems. Using the IDT MASTER/SLAVE Dual-Port RAM

approach in 32-bit or wider memory system applications results in full-

speed, error-free operation without the need for additional discrete logic.

This device provides two independent ports with separate control,

address, and I/O pins that permit independent, asynchronous access for

reads or writes to any location in memory. An automatic power down

feature controlled by CE permits the on-chip circuitry of each port to enter

a very low standby power mode.

Fabricated using IDT’s CMOS high-performance technology, these

devices typically operate on only 300mW of power.

The IDT70V261 is packaged in a 100-pin Thin Quad Flatpack.

NOTES:

1. All VCC pins must be connected to power supply.

2. All GND pins must be connected to ground supply.

3. Package body is approximately 14mm x 14mm x 1.4mm.

4. This package code is used to reference the package diagram.

5. This text does not indicate orientation of the actual part-marking.

Pin Names

Pin Configurations(1,2,3)

Index

26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50

100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 80 79 78 77 76

N/C

I/O10L

I/O11L

I/O12L

I/O13L

GND

I/O14L

I/O15L

VCC

GND

I/O0R

I/O1R

I/O2R

I/O3R

VCC

I/O4R

I/O5R

I/O6R

N/C

3040 drw 02

N/C

A5L

A4L

A3L

A2L

A1L

A0L

INTL

GND

M/S

BUSYR

INTR

A0R

N/C

BUSYL

A1R

A2R

A3R

A4R

I/O9L

I/O8L

I/O7L

I/O6L

I/O5L

I/O4L

I/O3L

I/O2L

GND

I/O1L

I/O0L

OEL

VCC

R/WL

SEML

CEL

UBL

LBL

A12L

A11L

A10L

I/O7R

I/O8R

I/O9R

I/O10R

I/O11R

I/O12R

I/O13R

I/O14R

GND

I/O15R

OER

R/WR

SEMR

CER

UBR

LBR

GND

A12R

A11R

A10R

A9R

A8R

A7R

A6R

A13L

A13R

IDT70V261PF

PN100-1(4)

100-Pin TQFP

Top View(5)

A6L

A5R

A9L

A8L

A7L

12/11/01

Left Port Ri ght Port Names

CELCERChip Enab le

R/WLR/WRRead /Write Enab le

OELOEROutp ut Enab le

A0L - A13L A0R - A13R Address

I/O0L - I/ O15L I/O0R - I/ O15R Data Inp ut/ Outp ut

SEMLSEMRSemaphore Enable

UBLUBRUp p e r B yte S ele c t

LBLLBRLo we r Byte S ele ct

BUSYLBUSYRBusy Flag

M/SMaster o r Slave Select

VCC Power

GND Ground

3040 tbl 01

6.42

IDT70V261S/L

High-Speed 16K x 16 Dual-Port Static RAM with Interrupt Industrial and Commercial Temperature Ranges

Truth Table II: Semaphore Read/Write Control(1)

Truth Table I: Non-Contention Read/Write Control

NOTE:

1. A0L — A13L ≠ A0R — A13R

NOTE:

1. There are eight semaphore flags written to via I/O0 and read from all I/O's (I/O0-I/O15). These eight semaphores are addressed by A 0-A2.

Inputs(1) Outputs

Mode

CE R/WOE UB LB SEM I/O8-15 I/O0-7

HXXXXHHigh-ZHigh-ZDeselected: Power-Down

X X X H H H Hig h-Z Hig h-Z Bo th By te s De se le cte d: Po we r-Do wn

LLXLHHDATA

IN High-Z Write to Upper Byte Only

L L X H L H High-Z DATAIN Write to Lower Byte Only

LLXLLHDATA

IN DATAIN Wri te to B o th Bytes

LHLLHHDATA

OUT Hig h-Z Read Upp e r Byte Only

LHLHLHHigh-ZDATA

OUT Read Lo we r Byte Only

LHLLLHDATA

OUT DATAOUT Read Both Bytes

X X H X X X High-Z High-Z Outputs Disabled

3040 tbl 02

Inputs(1) Outputs

Mode

CE R/WOE UB LB SEM I/O8-15 I/O0-7

HHLXXLDATA

OUT DATAOUT Read Data in Semaphore Flag

XHLHHLDATA

OUT DATAOUT Read Data in Semaphore Flag

H↑XXXLDATA

IN DATAIN Write I/O0 into Semaphore Flag

X↑XHHLDATA

IN DATAIN Write I/O0 into Semaphore Flag

LXXLXL ____ ____ Not A l lo we d

LXXXLL ____ ____ Not A l lo we d

3040 tbl 03

6.42

IDT70V261S/L

High-Speed 16K x 16 Dual-Port Static RAM with Interrupt Industrial and Commercial Temperature Ranges

DC Electrical Characteristics Over the Operating

Temperature and Supply Voltage Range (VCC = 3.3V ± 0.3v)

Absolute Maximum Ratings(1) Maximum Operating Temperature

and Supply Voltage(1)

Capacitance(1) (TA = +25°C, f = 1.0MHz)

Recommended DC Operating

Conditions(2)

NOTES:

1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may

cause permanent damage to the device. This is a stress rating only and functional

operation of the device at these or any other conditions above those indicated in

the operational sections of this specification is not implied. Exposure to absolute

maximum rating conditions for extended periods may affect reliability.

2. VTERM must not exceed Vcc + 0.3V for more than 25% of the cycle time or 10ns

maximum, and is limited to < 20mA for the period of VTERM > Vcc + 0.3V.

NOTES:

1. This is the parameter TA. This is the "instant on" case temperature.

NOTES:

1. VIL > -1.5V for pulse width less than 10ns.

2. VTERM must not exceed Vcc + 0.3V.

NOTES:

1. This parameter is determined by device characterization but is not production

tested. TQFP package only.

2. 3dV represents the interpolated capacitance when the input and output signals

switch from 0V to 3V or from 3V to 0V.

NOTE:

1. At VCC = 2.0V, input leakages are undefined.

Symbol Rating Commercial

& I nd ustr ial Unit

VTERM(2) Te rminal Voltage

with Re spe c t

to GND

-0.5 to +4.6 V

TBIAS Temperature

Under Bias -55 to + 125 oC

TSTG Storage

Temperature -65 to + 150 oC

IOUT DC Outp ut

Current 50 mA

3040 tbl 04

Symbol Parameter Conditions(2) Max. Unit

CIN Inp ut Cap ac i tanc e VIN = 3dV 9 pF

COUT Ou tp ut Cap ac itanc e V OUT = 3dV 10 pF

3040 tbl 07

Grade Am bi ent Tem perature GND Vcc

Commercial 0OC to +70OC0V3.3V

+ 0.3

Industrial -40OC to +85OC0V3.3V

+ 0.3

3040 tbl 05

Symbol Parameter Min. Typ. Max. Unit

VCC Supply Voltage 3.0 3.3 3.6 V

GND Ground 0 0 0 V

VIH Inp ut Hi g h Vo ltag e 2. 2 ____ VCC+0.3(2) V

VIL Inp ut Lo w Vo l tag e -0. 3(1) ____ 0.8 V

3 0 40 tb l 06

Symbol Parameter Test Conditions

70V261S 70V261L

UnitMin. Max. Min. Max.

|ILI| Input Leakage Current(1) VCC = 3.6V, VIN = 0V to VCC ___ 10 ___ 5µA

|ILO| Outp ut Le akag e Curre nt CE = VIH, VOUT = 0V to V CC ___ 10 ___ 5µA

VOL Output Low Vo ltage IOL = +4mA ___ 0.4 ___ 0.4 V

VOH Output Hig h Voltage IOH = -4mA 2.4 ___ 2.4 ___ V

3040 t bl 0 8

6.42

IDT70V261S/L

High-Speed 16K x 16 Dual-Port Static RAM with Interrupt Industrial and Commercial Temperature Ranges

DC Electrical Characteristics Over the Operating

Temperature and Supply Voltage Range(1) (VCC = 3.3V ± 0.3V)

NOTES:

1. 'X' in part number indicates power rating (S or L)

2. VCC = 3.3V, TA = +25°C, and are not production tested. ICCDC = 80mA (Typ.)

3. At f = fMAX, address and control lines (except Output Enable) are cycling at the maximum frequency read cycle of 1/tRC, and using “AC Test Conditions” of input levels of

GND to 3V.

4. f = 0 means no address or control lines change.

5. Port "A" may be either left or right port. Port "B" is the opposite from port "A".

70V261X25

Com'l

& Ind 70V261X35

Com'l Only 70V261X55

Com'l Only

Symbol Parameter Test Condition Version Typ.(2) Max. Typ.(2) Max. Typ.(2) Max. Unit

ICC Dynamic Op erating

Current

(Bo th Po rts Ac tive )

= VIL, Outputs Disabled

SEM = VIH

f = fMAX(3)

COM'L S

L100

100 170

140 90

90 140

120 90

90 140

120 mA

IND S

L100

100 200

185 ____

____

____ mA

ISB1 Standby Current

(B oth Po rts - TTL

Le v el Inp uts)

R = CE

L = VIH

SEMR = SEML = VIH

f = fMAX(3)

COM'L S

L14

12 30

24 12

10 30

24 12

10 30

24 mA

IND S

L14

12 60

50 ____

____

____ mA

ISB2 Standby Current

(One Po rt - TTL

Le v el Inp uts)

"A" = VIL and CE

"B" = VIH(5)

A c ti ve P o r t Ou tp uts D is abl e d ,

f=fMAX(3)

SEMR = SEML = VIH

COM'L S

L50

50 95

85 45

45 87

75 45

45 87

75 mA

IND S

L50

50 130

105 ____

____

____ mA

ISB3 Full Standby Current

(B oth P o rt s -

CM OS L e v e l In p uts)

Both Ports CE

L and

R > VCC - 0.2V,

VIN > VCC - 0. 2V o r

VIN < 0.2V, f = 0(4)

SEMR = SEML > VCC - 0.2V

COM'L S

L1.0

0.2 6

31.0

0.2 6

31.0

0.2 6

3mA

IND S

L1.0

0.2 6

3____

____

____ mA

ISB4 Full Standby Current

(One Po rt -

CM OS L e v e l In p uts)

"A" < 0.2V and

"B" > VCC - 0.2V(5)

SEMR = SEML > VCC - 0.2V

VIN > VCC - 0.2V o r V IN < 0.2V

A c ti ve P o r t Ou tp uts D is abl e d ,

f = fMAX(3)

COM'L S

L60

60 90

80 55

55 85

74 55

55 85

74 mA

IND S

L60

60 125

90 ____

____

____ mA

3040 tbl 09

6.42

IDT70V261S/L

High-Speed 16K x 16 Dual-Port Static RAM with Interrupt Industrial and Commercial Temperature Ranges

AC Test Conditions

Figure 1. AC Output Test Load

NOTES:

1. Transition is measured 0mV from Low- or High-impedance voltage with Output Test Load (Figure 2).

2. This parameter is guaranteed by device characterization, but is not production tested.

3. To access RAM, CE = VIL and SEM = VIH. To access semaphore, CE = VIH and SEM = VIL.

4. 'X' in part number indicates power rating (S or L).

AC Electrical Characteristics Over the

Operating Temperature and Supply Voltage Range(4)

Timing of Power-Up Power-Down

3040 drw 05

tPU

ICC

ISB

tPD

Input Pulse Levels

Inp ut Ris e/ Fal l Time s

In p ut Ti mi ng Refer e nc e L e v e ls

Outp ut Refe re nce Le v els

Outp ut Lo ad

GND to 3.0V

3ns Max .

1.5V

Fi g ure s 1 and 2

3040 tbl 10

3040 drw 04

590Ω

30pF

435Ω

3.3V

DATAOUT

BUSY

INT

590Ω

5pF*

435Ω

3.3V

DATAOUT

3040 drw 03

Figure 2. Output Test Load

(for tLZ, tHZ, tWZ, tOW)

* Including scope and jig.

70V261X25

Com'l

& Ind 70V261X35

Com'l Only 70V261X55

Com'l Only

UnitSymbol Parameter Min.Max.Min.Max.Min.Max.

READ CYCLE

tRC Read Cyc le Time 25 ____ 35 ____ 55 ____ ns

tAA Add ress Access Time ____ 25 ____ 35 ____ 55 ns

tACE Chip Enable Access Time(3) ____ 25 ____ 35 ____ 55 ns

tABE Byte Enable Access Time(3) ____ 25 ____ 35 ____ 55 ns

tAOE Output Enable Acc ess Time ____ 15 ____ 20 ____ 30 ns

tOH Output Hold from Address Change 3 ____ 3____ 3____ ns

tLZ Output Low-Z Time(1,2) 3____ 3____ 3____ ns

tHZ Output High-Z Time(1,2) ____ 15 ____ 20 ____ 25 ns

tPU Chip E nab le to P owe r Up Time (2) 0____ 0____ 0____ ns

tPD Chi p Disab le to Po wer Do wn Time (2) ____ 25 ____ 35 ____ 50 ns

tSOP Semaphore Flag Update Pulse (OE or SEM)15

____ 15 ____ 15 ____ ns

tSAA Semaphore Address Access Time ____ 35 ____ 45 ____ 65 ns

3040 tbl 11

6.42

IDT70V261S/L

High-Speed 16K x 16 Dual-Port Static RAM with Interrupt Industrial and Commercial Temperature Ranges

Waveform of Read Cycles(5)

AC Electrical Characteristics Over the

Operating Temperature and Supply Voltage(5)

NOTES:

1. Transition is measured 0mV from Low- or High-impedance voltage with Output Test Load (Figure 2).

2. This parameter is guaranteed by device characterization, but is not production tested.

3. To access RAM, CE = VIL and SEM = VIH. To access semaphore, CE = VIH and SEM = VIL. Either condition must be valid for the entire tEW time.

4. The specification for tDH must be met by the device supplying write data to the RAM under all operating conditions. Although tDH and tOW values will vary over voltage and

temperature, the actual tDH will always be smaller than the actual tOW.

5. 'X' in part number indicates power rating (S or L).

NOTES:

1. Timing depends on which signal is asserted last, OE, CE, LB, or UB.

2. Timing depends on which signal is de-asserted first CE, OE, LB, or UB.

3. tBDD delay is required only in cases where the opposite port is completing a write operation to the same address location. For simultaneous read operations BUSY has no

relation to valid output data.

4. Start of valid data depends on which timing becomes effective last tAOE, tACE, tAA or tBDD.

5. SEM = VIH.

tRC

R/W

ADDR

tAA

UB,LB

3040 drw

(4)

tACE(4)

tAOE(4)

tABE (4)

(1)

tLZ tOH

(2)

tHZ

(3,4)

tBDD

DATAOUT

BUSYOUT

VALID DATA(4)

Symbol Parameter

70V261X25

Com'l

& Ind 70V261X35

Com'l Only 70V261X55

Com'l Only

UnitMin. Max. Min. Max. Min. Max.

WRIT E CYC LE

Write Cycle Time 25

____

Chip Enable to End-of-Write

(3)

____

Address Valid to End-of-Write 20

____

Address Set-up Time

(3)

____

Write P ulse Wid th 20

____

Write Recovery Time 0

____

Data Valid to End-of-Write 15

____

Output High-Z Time

(1,2) ____

____

25 ns

Data Hold Time

(4)

____

W rite Enab l e to O utput in High-Z

(1,2) ____

____

25 ns

Outp ut A c tiv e from E nd -of-W rite

(1,2,4)

____

SWRD

SEM

F lag W rite to R e ad Tim e 5

____

SPS

SEM

Flag Contention Window 5

____

3040 tbl 12

6.42

IDT70V261S/L

High-Speed 16K x 16 Dual-Port Static RAM with Interrupt Industrial and Commercial Temperature Ranges

Timing Waveform of Write Cycle No. 1, R/W Controlled Timing(1,5,8)

NOTES:

1. R/W or CE or UB and LB must be HIGH during all address transitions.

2. A write occurs during the overlap (tEW or tWP) of a LOW CE and a LOW R/W for memory array writing cycle.

3. tWR is measured from the earlier of CE or R/W (or SEM or R/W) going HIGH to the end of write cycle.

4. During this period, the I/O pins are in the output state and input signals must not be applied.

5. If the CE or SEM LOW transition occurs simultaneously with or after the R/W LOW transition, the outputs remain in the High-impedance state.

6. Timing depends on which enable signal is asserted last, CE or R/W.

7. This parameter is guaranteed by device characterization, but is not production tested. Transition is measured 0mV from steady state with the Output Test Load

(Figure 2).

8. If OE is LOW during R/W controlled write cycle, the write pulse width must be the larger of tWP or (tWZ + tDW) to allow the I/O drivers to turn off and data to be placed on the

bus for the required tDW. If OE is HIGH during an R/W controlled write cycle, this requirement does not apply and the write pulse can be as short as the specified tWP.

9. To access RAM, CE = VIL and SEM = VIH. To access semaphore, CE = VIH and SEM = VIL. tEW must be met for either condition.

Timing Waveform of Write Cycle No. 2, CE, UB, LB Controlled Timing(1,5)

R/W

tWC

tHZ

tAW

tWR

tAS tWP

DATAOUT

(2)

tWZ

tDW tDH

tOW

ADDRESS

DATAIN

(6)

(4) (4)

(7)

CE or SEM

3040 drw 07

(9)

CE or SEM (9)

(7)

(3)

3040 drw 08

tWC

tAS tWR

tDW tDH

ADDRESS

DATAIN

R/W

tAW

tEW

UB or LB

(3)

(2)

(6)

CE or SEM(9)

(9)

6.42

IDT70V261S/L

High-Speed 16K x 16 Dual-Port Static RAM with Interrupt Industrial and Commercial Temperature Ranges

SEM

3040 drw 09

tAW tEW

tSOP

I/O0

VALID ADDRESS

tSAA

R/W

tWR

tOH

tACE

VALID ADDRESS

DATAIN

VALID DATAOUT

tDW

tWP tDH

tAS

tSWRD tAOE

Read CycleWrite Cycle

A0-A2

VALID(2)

Timing Waveform of Semaphore Read after Write Timing, Either Side(1)

NOTES:

1. DOR = DOL = VIL, CER = CEL = VIH, or both UB & LB = VIH.

2. All timing is the same for left and right ports. Port “A” may be either left or right port. Port “B” is the opposite from port “A”.

3. This parameter is measured from R/W"A" or SEM"A" going HIGH to R/W"B" or SEM"B" going HIGH.

4. If tSPS is not satisfied, the semaphore will fall positively to one side or the other, but there is no guarantee which side will obtain the flag.

Timing Waveform of Semaphore Write Contention(1,3,4)

NOTES:

1. CE = VIH or UB & LB = VIH for the duration of the above timing (both write and read cycle).

2. “DATAOUT VALID” represents all I/O's (I/O0-I/O15) equal to the semaphore value.

SEM"A"

3040 drw 10

tSPS

MATCH

R/W"A"

MATCH

A0"A"-A2"A"

SIDE "A"

(2)

SEM"B"

R/W"B"

A0"B"-A2"B"

SIDE(2) "B"

6.42

IDT70V261S/L

High-Speed 16K x 16 Dual-Port Static RAM with Interrupt Industrial and Commercial Temperature Ranges

3040 drw 11

tDW

tAPS

ADDR"A"

tWC

DATAOUT "B"

MATCH

tWP

R/W"A"

DATAIN"A"

ADDR"B"

tDH

VALID

(1)

MATCH

BUSY"B"

tBDA

VALID

tBDD

tDDD(3)

tWDD

tBAA

AC Electrical Characteristics Over the

Operating Temperature and Supply Voltage Range(6)

NOTES:

1. Port-to-port delay through RAM cells from writing port to reading port, refer to "Timing Waveform of Write with Port-to-Port Read and BUSY (M/S = VIH)".

2. To ensure that the earlier of the two ports wins.

3. tBDD is a calculated parameter and is the greater of 0, tWDD – tWP (actual) or tDDD – tDW (actual).

4. To ensure that the write cycle is inhibited on port "B" during contention on port "A".

5. To ensure that a write cycle is completed on port "B" after contention on port "A".

6. "X" in part number indicates power rating (S or L).

Timing Waveform of write with Port-to-Port Read and BUSY(2,4,5)

NOTES:

1. To ensure that the earlier of the two ports wins. tAPS is ignored for M/S = VIL (SLAVE).

2. CEL = CER = VIL

3. OE = VIL for the reading port.

4. If M/S = VIL (SLAVE), then BUSY is an input (BUSY"A" = VIH and BUSY"B" = "don't care", for this example).

5. All timing is the same for left and right ports. Port "A" may be either the left or right port. Port "B" is the port opposite from port "A".

70V261X25

Com'l

& Ind

70V261X35

Com'l Only 70V261X55

Com'l Only

Symbol Parameter Min.Max.Min.Max.Min.Max.Unit

BUSY

TIMING (M/

= VIH)

tBAA

BUSY

Access Time from Addre ss Match ____ 25 ____ 35 ____ 45 ns

tBDA

BUSY

Disable Time from Address Not Match ____ 25 ____ 35 ____ 45 ns

tBAC

BUSY

Access Time from Chip Enable Low ____ 25 ____ 35 ____ 45 ns

tBDC

BUSY

Di s ab le Tim e fro m Chip E nab le Hig h ____ 25 ____ 35 ____ 45 ns

tAPS A rbitrati o n P rio rity S e t-up Tim e (2) 5____ 5____ 5____ ns

tBDD

BUSY

Dis ab le to Valid Data(3) ____ 35 ____ 40 ____ 50 ns

tWH Write Ho ld A fte r

BUSY

(5) 20 ____ 25 ____ 25 ____ ns

BUSY

INPUT TIMING (M/

= VIL)

tWB

BUSY

Input t o Wri te (4) 0____ 0____ 0____ ns

tWH Write Ho ld A fte r

BUSY

(5) 20 ____ 25 ____ 25 ____ ns

PO RT-TO-P ORT DEL AY TI MI NG

tWDD Write P ulse to Data Delay(1) ____ 55 ____ 65 ____ 85 ns

tDDD Write Data Valid to Re ad Data Delay (1) ____ 50 ____ 60 ____ 80 ns

2945 tbl 13

6.42

IDT70V261S/L

High-Speed 16K x 16 Dual-Port Static RAM with Interrupt Industrial and Commercial Temperature Ranges

Timing Waveform of Write with BUSY

Waveform of BUSY Arbitration Controlled by CE Timing(1)

NOTES:

1. tWH must be met for both BUSY input (SLAVE) and output (MASTER).

2. BUSY is asserted on port "B" blocking R/W"B", until BUSY"B" goes HIGH.

NOTES:

1. All timing is the same for left and right ports. Port “A” may be either the left or right port. Port “B” is the port opposite from port “A”.

2. If tAPS is not satisfied, the BUSY signal will be asserted on one side or the other, but there is no guarantee on which side BUSY will be asserted.

Waveform of BUSY Arbitration Cycle Controlled by

Address Match Timing(1)

3040 drw 12

R/W"A"

BUSY"B"

tWP

tWB

R/W"B"

tWH(1)

(2)

3040 drw 13

ADDR"A"

and "B" ADDRESSES MATCH

CE"A"

CE"B"

BUSY"B"

tAPS

tBAC tBDC

(2)

3040 drw 14

ADDR"A" ADDRESS "N"

ADDR"B"

BUSY"B"

tAPS

tBAA tBDA

(2)

MATCHING ADDRESS "N"

6.42

IDT70V261S/L

High-Speed 16K x 16 Dual-Port Static RAM with Interrupt Industrial and Commercial Temperature Ranges

NOTES:

1. 'X' in part number indicates power rating (S or L).

NOTES:

1. All timing is the same for left and right ports. Port “A” may be either the left or right port. Port “B” is the port opposite from “A”.

2. See Interrupt Truth Table III.

3. Timing depends on which enable signal is asserted last.

4. Timing depends on which enable signal is de-asserted first.

AC Electrical Characteristics Over the

Operating Temperature and Supply Voltage Range(1)

Waveform of Interrupt Timing(1)

70V261X25

Com'l

& Ind 70V261X35

Com'l Only 70V261X55

Com'l Only

Symbol Parameter Min.Max.Min.Max.Min.Max.Unit

INTERRUPT TIMING

Address Set-up Time 0

____

Write Recovery Time 0

____

INS

Inte rrup t Set Tim e

____

40 ns

INR

Inte rrup t Re s et Tim e

____

45 ns

3040 tb l 1 4

3040 drw 15

ADDR"A" INTERRUPT SET ADDRESS

CE"A"

R/W"A"

tAS

tWC

tWR

(3) (4)

tINS (3)

INT"B"

(2)

3040 drw 16

ADDR"B" INTERRUPT CLEAR ADDRESS

CE"B"

OE"B"

tAS

tRC

(3)

tINR(3)

INT"B"

(2)

6.42

IDT70V261S/L

High-Speed 16K x 16 Dual-Port Static RAM with Interrupt Industrial and Commercial Temperature Ranges

NOTES:

1. Pins BUSYL and BUSYR are both outputs when the part is configured as a master. Both are inputs when configured as a slave. BUSYX outputs on the IDT70V261 are push

pull, not open drain outputs. On slaves the BUSYX input internally inhibits writes.

2. L if the inputs to the opposite port were stable prior to the address and enable inputs of this port. VIH if the inputs to the opposite port became stable after the address and

enable inputs of this port. If tAPS is not met, either BUSYL or BUSYR = LOW will result. BUSYL and BUSYR outputs cannot be LOW simultaneously.

3. Writes to the left port are internally ignored when BUSYL outputs are driving LOW regardless of actual logic level on the pin. Writes to the right port are internally ignored when

BUSYR outputs are driving LOW regardless of actual logic level on the pin.

Truth Table IV 

Address BUSY Arbitration

Truth Table V  Example of Semaphore Procurement Sequence(1,2,3)

NOTES:

1. This table denotes a sequence of events for only one of the eight semaphores on the IDT70V261.

2. There are eight semaphore flags written to via I/O0 and read from all I/O's (I/O0-I/O15). These eight semaphores are addressed by A0-A2.

3. CE = VIH, SEM = VIL to access the semaphore. Refer to the Semaphore Read/Write Control Truth Table.

Truth Table III  Interrupt Flag(1)

NOTES:

1. Assumes BUSYL = BUSYR =VIH.

2. If BUSYL = VIL, then no change.

3. If BUSYR = VIL, then no change.

Left Port Right Port

FunctionR/WLCELOELA13L-A0L INTLR/WRCEROERA13R-A0R INTR

LLX3FFFXXXX X L

(2) Set Right INTR Flag

XXX X XXL L3FFF H

(3) Re se t Rig ht INTR Flag

XXX X L

(3) L L X 3FFE X Set Left INTL Flag

XLL3FFE H

(2) X X X X X Re s et L e ft INTL Flag

3040 tbl 15

Inputs Outputs

Function

CELCERA0L-A13L

A0R-A13R BUSYL(1) BUSYR(1)

XXNO MATCHHHNormal

HXMATCHHHNormal

XHMATCHHHNormal

L L MATCH (2) (2) Write Inhib it(3)

3040 tbl 16

Functions D0 - D15 Left D0 - D15 Right Status

No Action 1 1 Se maphore free

Left Port Writes "0" to Semap hore 0 1 Left po rt has s emaphore token

Right Port Writes "0" to Semaphore 0 1 No change. Right side has no write access to semaphore

Left Port Writes "1" to Semap hore 1 0 Right p ort obtains semap hore toke n

Left Port Writes "0" to Semaphore 1 0 No change. Left port has no write access to semaphore

Right Port Writes "1" to Semaphore 0 1 Left port obtains semaphore token

Le ft Po rt Write s " 1" to Se map ho re 1 1 Se map ho re fre e

Right Port Writes "0" to Semaphore 1 0 Right port has semaphore token

Right Port Writes "1" to Semaphore 1 1 Semaphore free

Left Port Writes "0" to Semap hore 0 1 Left po rt has semaphore to ken

Le ft Po rt Write s " 1" to Se map ho re 1 1 Se map ho re fre e

3040 tbl 17

6.42

IDT70V261S/L

High-Speed 16K x 16 Dual-Port Static RAM with Interrupt Industrial and Commercial Temperature Ranges

Functional Description

The IDT70V261 provides two ports with separate control, address

and I/O pins that permit independent access for reads or writes to any

location in memory. The IDT70V261 has an automatic power down

feature controlled by CE. The CE controls on-chip power down circuitry

that permits the respective port to go into a standby mode when not

selected (CE HIGH). When a port is enabled, access to the entire

memory array is permitted.

Interrupts

If the user chooses the interrupt function, a memory location (mail

box or message center) is assigned to each port. The left port interrupt

flag (INTL) is asserted when the right port writes to memory location

3FFE (HEX), where a write is defined as CER = R/WR = VIL per Truth

Table III. The left port clears the interrupt through access of address

location 3FFE when CEL = OEL = VIL, R/W is a "don't care". Likewise,

the right port interrupt flag (INTR) is asserted when the left port writes

to memory location 3FFF (HEX) and to clear the interrupt flag (INTR),

the right port must read the memory location 3FFF. The message (8

bits) at 3FFE or 3FFF is user-defined since it is an addressable SRAM

location. If the interrupt function is not used, address locations 3FFE

and 3FFF are not used as mail boxes, but as part of the random access

memory. Refer to Truth Table III for the interrupt operation.

Busy Logic

Busy Logic provides a hardware indication that both ports of the

RAM have accessed the same location at the same time. It also allows

one of the two accesses to proceed and signals the other side that the

RAM is “busy”. The BUSY pin can then be used to stall the access until

the operation on the other side is completed. If a write operation has

been attempted from the side that receives a BUSY indication, the write

signal is gated internally to prevent the write from proceeding.

The use of BUSY logic is not required or desirable for all applica-

tions. In some cases it may be useful to logically OR the BUSY outputs

together and use any busy indication as an interrupt source to flag an

illegal or illogical operation. If the write inhibit function of BUSY logic

is not desirable, the BUSY logic can be disabled by placing the part in

slave mode with the M/S pin. Once in slave mode the BUSY pin

operates solely as a write inhibit input pin. Normal operation can be

programmed by tying the BUSY pins HIGH. If desired, unintended

write operations can be prevented to a port by tying the BUSY pin for

that port LOW.

The BUSY outputs on the IDT70V261 RAM in master mode, are

push-pull type outputs and do not require pull up resistors to operate.

If these RAMs are being expanded in depth, then the BUSY indication

for the resulting array requires the use of an external AND gate.

Width Expansion with Busy Logic

Master/Slave Arrays

When expanding an IDT70V261 RAM array in width while using

BUSY logic, one master part is used to decide which side of the RAM

array will receive a BUSY indication, and to output that indication. Any

number of slaves to be addressed in the same address range as the

master use the BUSY signal as a write inhibit signal. Thus on the

IDT70V261 SRAM the BUSY pin is an output if the part is used as a

master (M/S pin = VIH), and the BUSY pin is an input if the part used

as a slave (M/S pin = VIL) as shown in Figure 3.

If two or more master parts were used when expanding in width, a

split decision could result with one master indicating BUSY on one side

of the array and another master indicating BUSY on one other side of

the array. This would inhibit the write operations from one port for part

of a word and inhibit the write operations from the other port for part of

the other word.

The BUSY arbitration, on a master, is based on the chip enable and

address signals only. It ignores whether an access is a read or write.

In a master/slave array, both address and chip enable must be valid

long enough for a BUSY flag to be output from the master before the

actual write pulse can be initiated with either the R/W signal or the byte

enables. Failure to observe this timing can result in a glitched internal

write inhibit signal and corrupted data in the slave.

Semaphores

The IDT70V261 is a fast Dual-Port 16K x 16 CMOS Static RAM with

an additional 8 address locations dedicated to binary semaphore flags.

These flags allow either processor on the left or right side of the Dual-

Port SRAM to claim a privilege over the other processor for functions

defined by the system designer’s software. As an example, the

semaphore can be used by one processor to inhibit the other from

accessing a portion of the Dual-Port SRAM or any other shared

resource.

The Dual-Port SRAM features a fast access time, and both ports

are completely independent of each other. This means that the activity

on the left port in no way slows the access time of the right port. Both

ports are identical in function to standard CMOS Static RAM and can

be read from, or written to, at the same time with the only possible

conflict arising from the simultaneous writing of, or a simultaneous

READ/WRITE of, a non-semaphore location. Semaphores are pro-

tected against such ambiguous situations and may be used by the

system program to avoid any conflicts in the non-semaphore portion

of the Dual-Port RAM. These devices have an automatic power-down

feature controlled by CE, the Dual-Port SRAM enable, and SEM, the

semaphore enable. The CE and SEM pins control on-chip power down

circuitry that permits the respective port to go into standby mode when

not selected. This is the condition which is shown in Truth Table I where

CE and SEM are both HIGH.

3040 drw 17

MASTER

Dual Port

RAM

BUSYLBUSYR

MASTER

Dual Port

RAM

BUSYLBUSYR

SLAVE

Dual Port

RAM

BUSYLBUSYR

SLAVE

Dual Port

RAM

BUSYLBUSYR

DECODER

Figure 3. Busy and chip enable routing for both width and depth expansion

with IDT70V261 RAMs.

6.42

IDT70V261S/L

High-Speed 16K x 16 Dual-Port Static RAM with Interrupt Industrial and Commercial Temperature Ranges

3040 drw 18

0DQ

WRITE D0

QWRITE

SEMAPHORE

REQUEST FLIP FLOP SEMAPHORE

REQUEST FLIP FLOP

LPORT RPORT

SEMAPHORE

READ SEMAPHORE

READ

Systems which can best use the IDT70V261 contain multiple

processors or controllers and are typically very high-speed systems

which are software controlled or software intensive. These systems

can benefit from a performance increase offered by the IDT70V261's

hardware semaphores, which provide a lockout mechanism without

requiring complex programming.

Software handshaking between processors offers the maximum in

system flexibility by permitting shared resources to be allocated in

varying configurations. The IDT70V261 does not use its semaphore

flags to control any resources through hardware, thus allowing the

system designer total flexibility in system architecture.

An advantage of using semaphores rather than the more common

methods of hardware arbitration is that wait states are never incurred

in either processor. This can prove to be a major advantage in very

high-speed systems.

How the Semaphore Flags Work

The semaphore logic is a set of eight latches which are indepen-

dent of the Dual-Port SRAM. These latches can be used to pass a flag,

or token, from one port to the other to indicate that a shared resource

is in use. The semaphores provide a hardware assist for a use

assignment method called “Token Passing Allocation.” In this method,

the state of a semaphore latch is used as a token indicating that shared

resource is in use. If the left processor wants to use this resource, it

requests the token by setting the latch. This processor then verifies its

success in setting the latch by reading it. If it was successful, it

proceeds to assume control over the shared resource. If it was not

successful in setting the latch, it determines that the right side

processor has set the latch first, has the token and is using the shared

resource. The left processor can then either repeatedly request that

semaphore’s status or remove its request for that semaphore to

perform another task and occasionally attempt again to gain control of

the token via the set and test sequence. Once the right side has

relinquished the token, the left side should succeed in gaining control.

The semaphore flags are active LOW. A token is requested by

writing a zero into a semaphore latch and is released when the same

side writes a one to that latch.

The eight semaphore flags reside within the IDT70V261 in a

separate memory space from the Dual-Port SRAM. This address

space is accessed by placing a LOW input on the SEM pin (which acts

as a chip select for the semaphore flags) and using the other control

pins (Address, OE, and R/W) as they would be used in accessing a

standard Static RAM. Each of the flags has a unique address which

can be accessed by either side through address pins A0 – A2. When

accessing the semaphores, none of the other address pins has any

effect.

When writing to a semaphore, only data pin D0 is used. If a low level

is written into an unused semaphore location, that flag will be set to a

zero on that side and a one on the other side (see Truth Table V). That

semaphore can now only be modified by the side showing the zero.

When a one is written into the same location from the same side, the

flag will be set to a one for both sides (unless a semaphore request

from the other side is pending) and then can be written to by both sides.

The fact that the side which is able to write a zero into a semaphore

subsequently locks out writes from the other side is what makes

semaphore flags useful in interprocessor communications. (A thor-

ough discussion on the use of this feature follows shortly.) A zero

written into the same location from the other side will be stored in the

semaphore request latch for that side until the semaphore is freed by

Figure 4. IDT70V261 Semaphore Logic

the first side.

When a semaphore flag is read, its value is spread into all data bits

so that a flag that is a one reads as a one in all data bits and a flag

containing a zero reads as all zeros. The read value is latched into one

side’s output register when that side's semaphore select (SEM) and

output enable (OE) signals go active. This serves to disallow the

semaphore from changing state in the middle of a read cycle due to a

write cycle from the other side. Because of this latch, a repeated read

of a semaphore in a test loop must cause either signal (SEM or OE) to

go inactive or the output will never change.

A sequence WRITE/READ must be used by the semaphore in

order to guarantee that no system level contention will occur. A

processor requests access to shared resources by attempting to write

a zero into a semaphore location. If the semaphore is already in use,

the semaphore request latch will contain a zero, yet the semaphore

flag will appear as one, a fact which the processor will verify by the

subsequent read (see Truth Table V). As an example, assume a

processor writes a zero to the left port at a free semaphore location. On

a subsequent read, the processor will verify that it has written success-

fully to that location and will assume control over the resource in

question. Meanwhile, if a processor on the right side attempts to write

a zero to the same semaphore flag it will fail, as will be verified by the

fact that a one will be read from that semaphore on the right side during

subsequent read. Had a sequence of READ/WRITE been used

instead, system contention problems could have occurred during the

gap between the read and write cycles.

It is important to note that a failed semaphore request must be

followed by either repeated reads or by writing a one into the same

location. The reason for this is easily understood by looking at the

simple logic diagram of the semaphore flag in Figure 4. Two sema-

phore request latches feed into a semaphore flag. Whichever latch is

first to present a zero to the semaphore flag will force its side of the

semaphore flag low and the other side HIGH. This condition will

continue until a one is written to the same semaphore request latch.

Should the other side’s semaphore request latch have been written to

a zero in the meantime, the semaphore flag will flip over to the other

side as soon as a one is written into the first side’s request latch. The

second side’s flag will now stay LOW until its semaphore request latch

is written to a one. From this it is easy to understand that, if a

semaphore is requested and the processor which requested it no

6.42

IDT70V261S/L

High-Speed 16K x 16 Dual-Port Static RAM with Interrupt Industrial and Commercial Temperature Ranges

longer needs the resource, the entire system can hang up until a one

is written into that semaphore request latch.

The critical case of semaphore timing is when both sides request

a single token by attempting to write a zero into it at the same time. The

semaphore logic is specially designed to resolve this problem. If

simultaneous requests are made, the logic guarantees that only one

side receives the token. If one side is earlier than the other in making

the request, the first side to make the request will receive the token. If

both requests arrive at the same time, the assignment will be arbitrarily

made to one port or the other.

One caution that should be noted when using semaphores is that

semaphores alone do not guarantee that access to a resource is

secure. As with any powerful programming technique, if semaphores

are misused or misinterpreted, a software error can easily happen.

Initialization of the semaphores is not automatic and must be

handled via the initialization program at power-up. Since any sema-

phore request flag which contains a zero must be reset to a one, all

semaphores on both sides should have a one written into them at

initialization from both sides to assure that they will be free when

needed.

Using SemaphoresSome Examples

Perhaps the simplest application of semaphores is their applica-

tion as resource markers for the IDT70V261’s Dual-Port RAM. Say the

16K x 16 RAM was to be divided into two 8K x 16 blocks which were

to be dedicated at any one time to servicing either the left or right port.

Semaphore 0 could be used to indicate the side which would control

the lower section of memory, and Semaphore 1 could be defined as the

indicator for the upper section of memory.

To take a resource, in this example the lower 8K of Dual-Port RAM,

the processor on the left port could write and then read a zero in to

Semaphore 0. If this task were successfully completed (a zero was

read back rather than a one), the left processor would assume control

of the lower 8K. Meanwhile the right processor was attempting to gain

control of the resource after the left processor, it would read back a one

in response to the zero it had attempted to write into Semaphore 0. At

this point, the software could choose to try and gain control of the

second 8K section by writing, then reading a zero into Semaphore 1.

If it succeeded in gaining control, it would lock out the left side.

Once the left side was finished with its task, it would write a one to

Semaphore 0 and may then try to gain access to Semaphore 1. If

Semaphore 1 was still occupied by the right side, the left side could

undo its semaphore request and perform other tasks until it was able

to write, then read a zero into Semaphore 1. If the right processor

performs a similar task with Semaphore 0, this protocol would allow the

two processors to swap 8K blocks of Dual-Port RAM with each other.

The blocks do not have to be any particular size and can even be

variable, depending upon the complexity of the software using the

semaphore flags. All eight semaphores could be used to divide the

Dual-Port RAM or other shared resources into eight parts. Sema-

phores can even be assigned different meanings on different sides

rather than being given a common meaning as was shown in the

example above.

Semaphores are a useful form of arbitration in systems like disk

interfaces where the CPU must be locked out of a section of memory

during a transfer and the I/O device cannot tolerate any wait states.

With the use of semaphores, once the two devices has determined

which memory area was “off-limits” to the CPU, both the CPU and the

I/O devices could access their assigned portions of memory continu-

ously without any wait states.

Semaphores are also useful in applications where no memory

“WAIT” state is available on one or both sides. Once a semaphore

handshake has been performed, both processors can access their

assigned RAM segments at full speed.

Another application is in the area of complex data structures. In this

case, block arbitration is very important. For this application one

processor may be responsible for building and updating a data

structure. The other processor then reads and interprets that data

structure. If the interpreting processor reads an incomplete data

structure, a major error condition may exist. Therefore, some sort of

arbitration must be used between the two different processors. The

building processor arbitrates for the block, locks it and then is able to

go in and update the data structure. When the update is completed, the

data structure block is released. This allows the interpreting processor

to come back and read the complete data structure, thereby guaran-

teeing a consistent data structure.

6.42

IDT70V261S/L

High-Speed 16K x 16 Dual-Port Static RAM with Interrupt Industrial and Commercial Temperature Ranges

Ordering Information

3040 drw 19

Power

999

Speed

Package

Process/

Temperature

Range

Blank

I(1) Commercial (0°Cto+70

°C)

Industrial (-40°Cto+85

°C)

PF 100-pin TQFP (PN100-1)

LStandard Power

Low Power

XXXXX

Device

Type

256K (16K x 16) 3.3V Dual-Port RAM w/ Interrupt70V261

IDT

Speed in nanoseconds

Commercial & Industrial

Commercial Only

NOTE:

1. For other speeds, packages and powers contact your sales office.

The IDT logo is a registered trademark of Integrated Device Technology, Inc.

CORPORATE HEADQUARTERS for SALES: for Tech Support:

2975 Stender Way 800-345-7015 or 408-727-6116 831-754-4613

Santa Clara, CA 95054 fax: 408-492-8674 DualPortHelp@idt.com

www.idt.com

Datasheet Document History

3/25/99: Initiated datasheet document history

Converted to new format

Cosmetic and typographical corrections

Page 2 Added additional notes to pin configurations

6/10/99: Changed drawing format

8/30/99: Page 1 Changed 660mW to 660µW

11/12/99: Replaced IDT logo

6/7/00: Page 4 Increated storage temperature parameter

Clarified TA Parameter

Page 5 DC Electrical parameters–changed wording from "open" to "disabled"

Changed ±200mV to 0mV in notes

12/01/01: Page 2 Added date revision to pin configurations

Page 5 Added I-temp values for 25ns to DC Electrical Characteristics

Pages 4, 5, 6, 7, 10 & 12 Removed I-temp footnotes from all tables

Page 17 Added I-temp offering in ordering information

Page 1 & 17 Replaced TM logo with ® logo