© 2006 IXYS All rights reserved 1 - 4
0648
IXBF 40N160
IXYS reserves the right to change limits, test conditions and dimensions.
Features
• High Voltage BIMOSFETTM
- substitute for high voltage MOSFETs
with significantly lower voltage drop
- fast switching for high frequency
operation
- reverse conduction capability
• ISOPLUS i4-PACTM
high voltage package
- isolated back surface
- enlarged creepage towards heatsink
- enlarged creepage between high
voltage pins
- application friendly pinout
- high reliability
- industry standard outline
Applications
• switched mode power supplies
• DC-DC converters
• resonant converters
• lamp ballasts
• laser generators, x ray generators
IGBT
Symbol Conditions Maximum Ratings
VCES TVJ = 25°C to 150°C 1600 V
VGES ± 20 V
IC25 TC = 25°C 28 A
IC90 TC = 90°C 16 A
ICM VGE = 15/0 V; RG = 22 Ω; TVJ = 125°C 40 A
VCEK RBSOA, Clamped inductive load; L = 100 µH 0.8VCES
Ptot TC = 25°C 250 W
Symbol Conditions Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
VCE(sat) IC = 20 A; VGE = 15 V; TVJ = 25°C 6.2 7.1 V
TVJ = 125°C 6.9 V
VGE(th) IC = 2 mA; VGE = VCE 48V
ICES VCE = 0.8VCES; VGE = 0 V; TVJ = 25°C 0.4 mA
TVJ = 125°C 0.8 mA
IGES VCE = 0 V; VGE = ± 20 V 500 nA
td(on) 200 ns
tr60 ns
td(off) 300 ns
tf40 ns
Cies VCE = 25 V; VGE = 0 V; f = 1 MHz 3300 pF
QGon VCE = 600V; VGE = 15 V; IC = 20 A 130 nC
VF(reverse conduction); IF = 20A 2.5 V
RthJC 0.5 K/W
Inductive load, TVJ = 125°C
VCE = 960 V; IC = 25 A
VGE = 15/0 V; RG = 22 Ω
High Voltage
BIMOSFETTM
in High Voltage ISOPLUS i4-PACTM
Monolithic Bipolar MOS Transistor
1
5
IC25 =28A
VCES = 1600 V
VCE(sat) = 6.2 V
tf=40ns
© 2006 IXYS All rights reserved 2 - 4
0648
IXBF 40N160
Component
Symbol Conditions Maximum Ratings
TVJ -55...+150 °C
Tstg -55...+125 °C
VISOL IISOL ≤ 1 mA; 50/60 Hz 2500 V~
FCmounting force with clip 20...120 N
Symbol Conditions Characteristic Values
min. typ. max.
dS,dAC pin - E pin 7 mm
dS,dApin - backside metal 5.5 mm
RthCH with heatsink compound 0.15 K/W
Weight 9g
Dimensions in mm (1 mm = 0.0394")
© 2006 IXYS All rights reserved 3 - 4
0648
IXBF 40N160
VCE - Volts
0 400 800 1200 1600
ICM - Amperes
0.1
1
10
100
VF - Volts
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
IF - Amperes
0
10
20
30
40
50
60
70
VCE - Volts
024681012141618
IC - Amperes
0
10
20
30
40
50
60
70
QG - nanocoulombs
0 20406080100120140
VGE - Volts
0
2
4
6
8
10
12
14
16
VCE - Volts
0 2 4 6 8 10 12 14 16 18
IC - Amperes
0
10
20
30
40
50
60
70
13V
TJ = 25°C VGE = 17V
TJ = 125°C
VCE = 600V
IC = 20A
TJ = 125°C
VCEK < VCES
15V
VGE - Volts
5678910111213
IC - Amperes
0
10
20
30
40
50
60
70
13V
VGE = 17V
15V
VCE = 20V
TJ = 125°C
TJ = 25°C
TJ = 125°C TJ = 25°C
IXBF 40N140
IXBF 40N160
Fig. 1 Typ. Output Characteristics Fig. 2 Typ. Output Characteristics
Fig. 3 Typ. Transfer Characteristics Fig. 4 Typ. Characteristics of Reverse
Conduction
Fig. 5 Typ. Gate Charge characteristics Fig. 6 Reverse Based Safe Operating Area
RBSOA
© 2006 IXYS All rights reserved 4 - 4
0648
IXBF 40N160
IC - Amperes
0 10203040
tfi - nanoseconds
0
10
20
30
40
50
Pulse Width - Seconds
0.00001 0.0001 0.001 0.01 0.1 1
ZthJC - K/W
0.0001
0.001
0.01
0.1
1
RG - Ohms
0 10203040
td(off) - nanoseconds
0
100
200
300
400
Single Pulse
IXBF40
VCE = 960V
VGE = 15V
RG = 22Ω
TJ = 125°C
VCE = 960V
VGE = 15V
IC = 20A
TJ = 125°C
Fig. 7 Typ. Fall Time Fig. 8 Typ. Turn Off Delay Time
Fig. 9 Typ. Transient Thermal Impedance
