IXBF 40N160 IC25 VCES VCE(sat) tf High Voltage BIMOSFETTM in High Voltage ISOPLUS i4-PACTM = 28 A = 1600 V = 6.2 V = 40 ns Monolithic Bipolar MOS Transistor 1 5 Features IGBT Conditions VCES TVJ = 25C to 150C Maximum Ratings VGES IC25 IC90 TC = 25C TC = 90C ICM VCEK VGE = 15/0 V; RG = 22 ; TVJ = 125C RBSOA, Clamped inductive load; L = 100 H Ptot TC = 25C Symbol Conditions V 20 V 28 16 A A 40 0.8VCES A 250 W Characteristic Values (TVJ = 25C, unless otherwise specified) min. typ. max. VCE(sat) IC = 20 A; VGE = 15 V; TVJ = 25C TVJ = 125C VGE(th) IC = 2 mA; VGE = VCE ICES VCE = 0.8VCES; VGE = 0 V; TVJ = 25C TVJ = 125C IGES VCE = 0 V; VGE = 20 V td(on) tr td(off) tf Inductive load, TVJ = 125C VCE = 960 V; IC = 25 A VGE = 15/0 V; RG = 22 Cies QGon VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 600V; VGE = 15 V; IC = 20 A VF (reverse conduction); IF = 20A 6.2 6.9 4 RthJC IXYS reserves the right to change limits, test conditions and dimensions. (c) 2006 IXYS All rights reserved 1600 7.1 V V 8 V 0.4 mA mA 500 nA 0.8 200 60 300 40 ns ns ns ns 3300 130 pF nC 2.5 V Applications * switched mode power supplies * DC-DC converters * resonant converters * lamp ballasts * laser generators, x ray generators 0.5 K/W 0648 Symbol * High Voltage BIMOSFETTM - substitute for high voltage MOSFETs with significantly lower voltage drop - fast switching for high frequency operation - reverse conduction capability * ISOPLUS i4-PACTM high voltage package - isolated back surface - enlarged creepage towards heatsink - enlarged creepage between high voltage pins - application friendly pinout - high reliability - industry standard outline 1-4 IXBF 40N160 Component Symbol Dimensions in mm (1 mm = 0.0394") Conditions Maximum Ratings TVJ Tstg VISOL IISOL 1 mA; 50/60 Hz FC mounting force with clip Symbol Conditions dS,dA dS,dA C pin - E pin pin - backside metal RthCH with heatsink compound C C 2500 V~ 20...120 N Characteristic Values min. typ. max. 7 5.5 mm mm 0.15 K/W 9 g 0648 Weight -55...+150 -55...+125 (c) 2006 IXYS All rights reserved 2-4 IXBF 40N160 70 70 VGE = 17V TJ = 25C VGE = 17V TJ = 125C 60 60 15V 13V IC - Amperes IC - Amperes 15V 50 40 30 20 50 13V 40 30 20 10 10 0 0 0 2 4 6 8 10 12 14 16 0 18 2 4 8 10 12 14 16 18 VCE - Volts VCE - Volts Fig. 1 Typ. Output Characteristics Fig. 2 Typ. Output Characteristics 70 70 VCE = 20V 60 60 50 50 IF - Amperes IC - Amperes 6 40 TJ = 25C TJ = 125C 30 40 30 TJ = 25C 20 20 10 10 0 0.0 0 5 6 7 8 9 10 11 12 13 0.5 1.0 VGE - Volts 2.5 3.0 3.5 4.0 Fig. 4 Typ. Characteristics of Reverse Conduction 100 VCE = 600V IC = 20A 14 2.0 VF - Volts Fig. 3 Typ. Transfer Characteristics 16 1.5 TJ = 125C ICM - Amperes VGE - Volts 12 10 8 6 10 TJ = 125C VCEK < VCES IXBF 40N140 IXBF 40N160 1 4 2 0 0 20 40 60 80 100 120 140 QG - nanocoulombs 0 400 800 1200 1600 VCE - Volts Fig. 6 Reverse Based Safe Operating Area RBSOA 0648 Fig. 5 Typ. Gate Charge characteristics 0.1 (c) 2006 IXYS All rights reserved 3-4 IXBF 40N160 400 VCE = 960V VGE = 15V IC = 20A TJ = 125C VCE = 960V VGE = 15V 40 RG = 22 td(off) - nanoseconds tfi - nanoseconds 50 TJ = 125C 30 20 10 300 200 100 0 0 0 10 20 30 40 0 10 20 30 40 RG - Ohms IC - Amperes Fig. 7 Typ. Fall Time Fig. 8 Typ. Turn Off Delay Time 1 ZthJC - K/W 0.1 0.01 Single Pulse 0.001 0.0001 0.00001 IXBF40 0.0001 0.001 0.01 0.1 1 Pulse Width - Seconds 0648 Fig. 9 Typ. Transient Thermal Impedance (c) 2006 IXYS All rights reserved 4-4