IL710T-3E - NVE Corporation

IL710

IsoLoop is a registered trademark of NVE Corporation.

*U.S. Patent numbers 5,831,426; 6,300,617 and others.

REV. T

NVE Corporation 11409 Valley View Road, Eden Prairie, MN 55344-3617 Phone: (952) 829-9217 Fax: (952) 829-9189 www.IsoLoop.com ©NVE Corporation

High Speed/High Temperature Digital Isolators

Functional Diagram

OUT

IL710

Truth Table

VI VOE VO

L L L

H L H

L H Z

H H Z

Features

• +5 V/+3.3 V CMOS / TTL Compatible

• High Speed: 150 Mbps Typical (IL710S)

• High Temperature: −40°C to +125°C (IL710T)

• 2500 VRMS Isolation (1 min.)

• 300 ps Typical Pulse Width Distortion (IL710S)

• 100 ps Typical Pulse Jitter

• 4 ns Typical Propagation Delay Skew

• 10 ns Typical Propagation Delay

• 30 kV/μs Typical Common Mode Transient Immunity

• Low EMC Footprint

• 8-pin MSOP, SOIC, and PDIP Packages

• UL1577 and IEC 61010-2001 Approved

Applications

• Digital Fieldbus

• RS-485 and RS-422

• Multiplexed Data Transmission

• Data Interfaces

• Board-to-Board Communication

• Digital Noise Reduction

• Operator Interface

• Ground Loop Elimination

• Peripheral Interfaces

• Serial Communication

• Logic Level Shifting

Description

NVE’s IL700 family of high-speed digital isolators are CMOS

devices manufactured with NVE’s patented* IsoLoop® spintronic

Giant Magnetoresistive (GMR) technology. The IL710S is the

world’s fastest isolator of its type, with a 150 Mbps typical data rate.

The symmetric magnetic coupling barrier provides a typical

propagation delay of only 10 ns and a pulse width distortion as low

as 300 ps (0.3 ns), achieving the best specifications of any isolator.

Typical transient immunity of 30 kV/µs is unsurpassed. The IL710 is

ideal for isolating applications such as PROFIBUS, RS-485, and

RS-422.

The IL710 is available in 8-pin MSOP, SOIC, and PDIP packages.

Standard and S-Grade parts are specified over a temperature range of

−40°C to +100°C; T-Grade parts are specified over a temperature

range of −40°C to +125°C.

IL710

Absolute Maximum Ratings

Parameters Symbol Min. Typ. Max. Units Test Conditions

Storage Temperature TS −55 150 °C

Ambient Operating Temperature(1)

IL710T TA −55 125

135 °C

Supply Voltage VDD1, VDD2 −0.5 7 V

Input Voltage VI −0.5 VDD1+0.5 V

Input Voltage VOE −0.5 VDD2+0.5 V

Output Voltage VO −0.5 VDD2+0.5 V

Output Current Drive IO 10 mA

Lead Solder Temperature 260 °C 10 sec.

ESD 2 kV HBM

Recommended Operating Conditions

Parameters Symbol Min. Typ. Max. Units Test Conditions

Ambient Operating Temperature

IL710 and IL710S

IL710T

−40

100

125

°C

Supply Voltage VDD1, VDD2 3.0 5.5 V

Logic High Input Voltage VIH 2.4 VDD1 V

Logic Low Input Voltage VIL 0 0.8 V

Input Signal Rise and Fall Times tIR, tIF 1 μs

Insulation Specifications

Parameters Symbol Min. Typ. Max. Units Test Conditions

Creepage Distance

MSOP 3.01 mm

SOIC 4.04 mm

PDIP 7.04 mm

Leakage Current(5) 0.2 μA 240 VRMS, 60 Hz

Barrier Impedance(5) >1014||3 Ω || pF

Package Characteristics

Parameters Symbol Min. Typ. Max. Units Test Conditions

Capacitance (Input–Output)(5) C

I–O 1.1 pF f = 1 MHz

Thermal Resistance

MSOP θJC 168 °C/W

SOIC θJC 144 °C/W

PDIP θJC 54 °C/W

Thermocouple at center

underside of package

Package Power Dissipation PPD 150 mW f = 1 MHz, VDD = 5 V

Safety and Approvals

IEC61010-1

TUV Certificate Numbers: N1502812, N1502812-101

Classification as Reinforced Insulation

Model Package

Pollution

Degree Material

Group Max. Working

Voltage

IL710-1 MSOP II III 150 VRMS

IL710-2 PDIP II III 300 VRMS

IL710-3 SOIC II III 150 VRMS

UL 1577

Component Recognition Program File Number: E207481

Rated 2500VRMS for 1 minute

Soldering Profile

Per JEDEC J-STD-020C, MSL=2

IL710

IL710 Pin Connections

1 VDD1 Supply voltage

2 IN Data In

3 NC No internal connection

4 GND1 Ground return for VDD1

5 GND2 Ground return for VDD2

6 OUT Data Out

VOE Output enable.

Internally held low with 100 kΩ

8 VDD2 Supply voltage

VDD1 VDD2

IN VOE

NC OUT

GND1GND2

IL710

Timing Diagram

Legend

tPLH Propagation Delay, Low to High

tPHL Propagation Delay, High to Low

tPW Minimum Pulse Width

tPLZ Propagation Delay, Low to High Impedance

tPZH Propagation Delay, High Impedance to High

tPHZ Propagation Delay, High to High Impedance

tPZL Propagation Delay, High Impedance to Low

tR Rise Time

tF Fall Time

IL710

3.3 Volt Electrical Specifications

Electrical specifications are Tmin to Tmax unless otherwise stated.

Parameters Symbol Min. Typ. Max. Units Test Conditions

DC Specifications

Input Quiescent Supply Current IDD1 8 10

μA

Output Quiescent Supply Current

IL710 and IL710S

IL710T

IDD2

1.7

3.3

Logic Input Current II −10 10 μA

VDD−0.1 VDD I

O = −20 μA, VI = VIH

Logic High Output Voltage VOH 0.8 x VDD 0.9 x VDD V IO = −4 mA, VI = VIH

0 0.1 IO = 20 μA, VI = VIL

Logic Low Output Voltage VOL 0.5 0.8 V IO = 4 mA, VI = VIL

Switching Specifications

Maximum Data Ra t e

IL710 and IL710T

IL710S

100

130

110

140

Mbps

CL = 15 pF

Pulse Width(7) PW 10 7.5 ns 50% Points, VO

Propagation Delay Input to Output

(High to Low) tPHL 12 18 ns CL = 15 pF

Propagation Delay Input to Output

(Low to High) tPLH 12 18 ns CL = 15 pF

Propagation Delay Enable to Output

(High to High Impedance) tPHZ 3 5 ns CL = 15 pF

Propagation Delay Enable to Output

(Low to High Impedance) tPLZ 3 5 ns CL = 15 pF

Propagation Delay Enable to Output

(High Impedance to High) tPZH 3 5 ns CL = 15 pF

Propagation Delay Enable to Output

(High Impedance to Low) tPZL 3 5 ns CL = 15 pF

Pulse Width Distortion(2)

IL710 and IL710T

IL710S

PWD

CL = 15 pF

Propagation Delay Skew(3) t

PSK 4 6 ns CL = 15 pF

Output Rise Time (10%–90%) tR 2 4 ns CL = 15 pF

Output Fall Time (10%–90%) tF 2 4 ns CL = 15 pF

Common Mode Transient Immunity

(Output Logic High or Logic Low)(4) |CMH|,|CML| 20 30 kV/μs VCM = 300 V

Dynamic Power Consumption(6) 140 240 μA/MHz

IL710

5 Volt Electrical Specifications

Electrical specifications are Tmin to Tmax unless otherwise stated.

Parameters Symbol Min. Typ. Max. Units Test Conditions

DC Specifications

Input Quiescent Supply Current IDD1 10 15 μA

Output Quiescent Supply Current

IL710 and IL710S

IL710T

IDD2

2.5

Logic Input Current II −10 10 μA

VDD−0.1 VDD I

O = −20 μA, VI = VIH

Logic High Output Voltage VOH 0.8 x VDD 0.9 x VDD V IO = −4 mA, VI = VIH

0 0.1 IO = 20 μA, VI = VIL

Logic Low Output Voltage VOL 0.5 0.8 V IO = 4 mA, VI = VIL

Switching Specifications

Maximum Data Ra t e

IL710 and IL710T

IL710S

100

130

110

150

Mbps

CL = 15 pF

Pulse Width(7) PW 10 7.5 ns 50% Points, VO

Propagation Delay Input to Output

(High to Low) tPHL 10 15 ns CL = 15 pF

Propagation Delay Input to Output

(Low to High) tPLH 10 15 ns CL = 15 pF

Propagation Delay Enable to Output

(High to High Impedance) tPHZ 3 5 ns CL = 15 pF

Propagation Delay Enable to Output

(Low to High Impedance) tPLZ 3 5 ns CL = 15 pF

Propagation Delay Enable to Output

(High Impedance to High) tPZH 3 5 ns CL = 15 pF

Propagation Delay Enable to Output

(High Impedance to Low) tPZL 3 5 ns CL = 15 pF

Pulse Width Distortion(2)

IL710 and IL710T

IL710S

PWD

0.3

CL = 15 pF

Pulse Jitter(8) t

J 100 ps CL = 15 pF

Propagation Delay Skew(3) t

PSK 4 6 ns CL = 15 pF

Output Rise Time (10%–90%) tR 1 3 ns CL = 15 pF

Output Fall Time (10%–90%) tF 1 3 ns CL = 15 pF

Common Mode Transient Immunity

(Output Logic High or Logic Low)(4) |CMH|,|CML| 20 30 kV/μs Vcm = 300 V

Dynamic Power Consumption(6) 200 340 μA/MHz

Notes (apply to both 3.3 V and 5 V specifications):

1. Absolute maximum ambient operating temperature means the device will not be damaged if operated under these conditions. It does not

guarantee performance.

2. PWD is defined as |tPHL − tPLH|. %PWD is equal to PWD divided by pulse width.

3. tPSK is the magnitude of the worst-case difference in tPHL and/or tPLH between devices at 25°C.

4. CMH is the maximum common mode voltage slew rate that can be sustained while maintaining VO > 0.8 VDD2. CML is the maximum

common mode input voltage that can be sustained while maintaining VO < 0.8 V. The common mode voltage slew rates apply to both rising

and falling common mode voltage edges.

5. Device is considered a two terminal device: pins 1–4 shorted and pins 5–8 shorted.

6. Dynamic power consumption is calculated per channel and is supplied by the channel’s input side power supply.

7. Minimum pulse width is the minimum value at which specified PWD is guaranteed.

8. 65,535-bit pseudo-random binary signal (PRBS) NRZ bit pattern with no more than five consecutive 1s or 0s; 800 ps transition time.

IL710

80 ns

Application Information

Electrostatic Discharge Sensitivity

This product has been tested for electrostatic sensitivity to the

limits stated in the specifications. However, NVE recommends that

all integrated circuits be handled with appropriate care to avoid

damage. Damage caused by inappropriate handling or storage could

range from performance degradation to complete failure.

Electromagnetic Compatibility

IsoLoop Isolators have the lowest EMC footprint of any isolation

technology. IsoLoop Isolators’ Wheatstone bridge configuration

and differential magnetic field signaling ensure excellent EMC

performance against all relevant standards.

These isolators are fully compliant with generic EMC standards

EN50081, EN50082-1 and the umbrella line-voltage standard for

Information Technology Equipment (ITE) EN61000. NVE has

completed compliance tests in the categories below:

EN50081-1

Residential, Commercial & Light Industrial

Methods EN55022, EN55014

EN50082-2: Industrial Environment

Methods EN61000-4-2 (ESD), EN61000-4-3 (Electromagnetic

Field Immunity), EN61000-4-4 (Electrical Transient Immunity),

EN61000-4-6 (RFI Immunity), EN61000-4-8 (Power Frequency

Magnetic Field Immunity), EN61000-4-9 (Pulsed Magnetic

Field), EN61000-4-10 (Damped Oscillatory Magnetic Field)

ENV50204

Radiated Field from Digital Telephones (Immunity Test)

Immunity to external magnetic fields is even higher if the field

direction is “end-to-end” rather than to “pin-to-pin” as shown in the

diagram below:

Cross-axis Field Direction

Dynamic Power Consumption

IsoLoop Isolators achieve their low power consumption from the

way they transmit data across the isolation barrier. By detecting the

edge transitions of the input logic signal and converting these to

narrow current pulses, a magnetic field is created around the GMR

Wheatstone bridge. Depending on the direction of the magnetic

field, the bridge causes the output comparator to switch following

the input logic signal. Since the current pulses are narrow, about

2.5 ns, the power consumption is independent of mark-to-space

ratio and solely dependent on frequency. This has obvious

advantages over optocouplers, which have power consumption

heavily dependent on mark-to-space ratio.

Power Supply Decoupling

Both power supplies to these devices should be decoupled with low

ESR 47 nF ceramic capacitors. Ground planes for both GND1 and

GND2 are highly recommended for data rates above 10 Mbps.

Capacitors must be located as close as possible to the VDD pins.

Signal Status on Start-up and Shut Down

To minimize power dissipation, input signals are differentiated and

then latched on the output side of the isolation barrier to reconstruct

the signal. This could result in an ambiguous output state

depending on power up, shutdown and power loss sequencing.

Therefore, the designer should consider including an initialization

signal in the start-up circuit. Initialization consists of toggling the

input either high then low, or low then high.

Data Transmission Rates

The reliability of a transmission system is directly related to the

accuracy and quality of the transmitted digital information. For a

digital system, those parameters which determine the limits of the

data transmission are pulse width distortion and propagation delay

skew.

Propagation delay is the time taken for the signal to travel through

the device. This is usually different when sending a low-to-high

than when sending a high-to-low signal. This difference, or error, is

called pulse width distortion (PWD) and is usually in nanoseconds.

It may also be expressed as a percentage:

PWD% = Maximum Pulse Width Distortion (ns) x 100%

Signal Pulse Width (ns)

For example, with data rates of 12.5 Mbps:

PWD% = 3 ns x 100% = 3.75%

This figure is almost three times better than any available

optocoupler with the same temperature range, and two times better

than any optocoupler regardless of published temperature range.

IsoLoop isolators exceed the 10% maximum PWD recommended

by PROFIBUS, and will run to nearly 35 Mb within the 10% limit.

Propagation delay skew is the signal propagation difference

between two or more channels. This becomes significant in clocked

systems because it is undesirable for the clock pulse to arrive

before the data has settled. Short propagation delay skew is

therefore especially critical in high data rate parallel systems for

establishing and maintaining accuracy and repeatability. Worst-

case channel-to-channel skew in an IL700 Isolator is only 3 ns,

which is ten times better than any optocoupler. IL700 Isolators

have a maximum propagation delay skew of 6 ns, which is five

times better than any optocoupler.

IL710

Application Diagrams

Isolated PROFIBUS / RS-485

Isolation

Boundary

IL710

ISL8485

NVE offers a unique line of PROFIBUS/RS-485 transceivers, but IL710 isolators can also be used as part of multi-chip designs using non-

isolated PROFIBUS transceivers.

ote:

VDD1 and VISO should be decoupled with

10 nF ceramic capacitors at I L 710

supply pins.

RS-485 Truth Table

TXD RTS A B RXD

1 0 Z Z X

0 0 Z Z X

1 1 1 0 1

0 1 0 1 0

IL710

Isolated USB

+3.3V

NET2890

USPB

USBM

USBOE

ISO_USB+

ISO_USB-

1.5k

Power supplied by USB

bus power this side of

isolation boundary

All power supplied by USB node’s

external supply on this side of

isolation boundary

5 x IL710

Isolation

Boundary

In this circuit, power is supplied by USB bus power on one side of the isolation barrier, and the USB node’s external supply on the other side of

the barrier. IL700 Isolators are specified with just 3 ns worst-case pulse width distortion.

IL710

Package Drawings, Dimensions and Specifications

8-pin MSOP

0.114 (2.90)

0.016 (0.40)

0.005 (0.13)

0.009 (0.23)

0.027 (0.70)

0.010 (0.25)

0.020 (0.50) 0.002 (0.05)

0.043 (1.10)

0.032 (0.80)

0.006 (0.15)

0.016 (0.40)

0.032 (0.80)

0.189 (4.80)

0.197 (5.00)

0.122 (3.10)

6˚

0˚

Pin spacing is a BASIC

dimension; tolerances

do not accumulate

NOTE:

8-pin SOIC Package

0.013 (0.33)

0.020 (0.50)

0.189 (4.8)

0.197 (5.0)

0.150 (3.8)

0.157 (4.0)

Dimensions in inches (mm)

0.228 (5.8)

0.244 (6.2)

0.008 (0.19)

0.010 (0.25)

0.010 (0.25)

0.020 (0.50)

x45º

0º

8º

0.016 (0.40)

0.050 (1.27)

0.040 (1.0)

0.060 (1.5)

0.054 (1.37)

0.069 (1.75)

0.004 (0.10)

0.010 (0.25)

Pin spacing is a BASIC

dimension; tolerances

do not accumulate

NOTE:

8-pin PDIP

0.36 (9.0)

0.40 (10.2)

Pin spacing is a BASIC

dimension; tolerances 

do not accumulate

NOTE:

0.24 (6.1)

0.26 (6.6)

0.29 (6.4)

0.31 (7.9)

0.30 (7.6)

0.37 (9.4)

0.008 (0.2)

0.015 (0.4)

0.030 (0.76)

0.045 (1.14) 0.015 (0.38)

0.023 (0.58) 0.045 (1.14)

0.065 (1.65)

0.09 (2.3)

0.11 (2.8)

0.015 (0.38)

0.035 (0.89)

0.12 (3.05)

0.15 (3.81)

IL710

Ordering Information and Valid Part Numbers

IL 710 T - 3 E TR13

Bulk Packaging

Blank = Tube

TR7 = 7" Tape and Reel

TR13 = 13" Tape and Reel

Package

Blank = 80/20 Tin/Lead Plating

E = RoHS Compliant

Package T ype

-1 = MSOP

-2 = PDIP

-3 = 0.15" 8-pin SOIC

Grade

Blank = Standard

T = High Temperature

S = High Speed

Base Part Number

710 = Single Channel

Product Family

IL = Isolators

Valid Part Numbers

IL710-1E

IL710S-1E

IL710T-1E

IL710-2

IL710T-2

IL710-2E

IL710T-2E

IL710-3

IL710S-3

IL710T-3

IL710-3E

IL710S-3E

IL710T-3E

All MSOP and SOIC

parts are available on

tape and reel.

RoHS

COMPLIANT

IL710

ISB-DS-001-IL710-T

November 2009 Changes

• Added typical jitter specificatio n at 5V.

ISB-DS-001-IL710-S

Changes

• Added EMC details.

ISB-DS-001-IL710-R Changes

• IEC 61010 approval for MSOP version.

ISB-DS-001-IL710-Q

Changes

• Added magnetic immunity to 3.3 and 5 volt electrical specifications.

• Added diagram showing cross-axis direction.

• Added magnetic compatibility to the applications information section.

ISB-DS-001-IL710-P Changes

• Note on all package drawings that pin-spacing tolerances are non-accumulating; change

MSOP pin-spacing dimensions and tolerance accordingly.

ISB-DS-001-IL710-O

Changes

• Corrected PWD spec. on Isolated USB application diagram (p. 8).

• Changed lower limit of length on PDIP package drawing and

tightened pin-spacing tolerance on MSOP package drawing (p. 9).

ISB-DS-001-IL710-N

Changes

• Changed IL710T output quiescent supply current specifications.

ISB-DS-001-IL710-M

Changes

• Changed ordering information to reflect that devices are now fully RoHS compliant with

no exemptions.

ISB-DS-001-IL710-L

Changes

• Eliminated soldering profile chart

ISB-DS-001-IL710-K

Changes

• Edited Profibus application

ISB-DS-001-IL710-J

Changes

• MSOP package, S- and T-Grades added

• Order information updated

ISB-DS-001-IL710-I Changes

• Added MSOP specifications

• Updated UL and IEC numbers

IL710

About NVE

An ISO 9001 Certified Company

NVE Corporation manufactures innovative products based on unique spintronic Giant Magnetoresistive (GMR) technology.

Products include Magnetic Field Sensors, Magnetic Field Gradient Sensors (Gradiometers), Digital Magnetic Field Sensors,

Digital Signal Isolators, and Isolated Bus Transceivers.

NVE pioneered spintronics and in 1994 introduced the world’s first products using GMR material, a line of ultra-precise magnetic

sensors for position, magnetic media, gear speed and current sensing.

NVE Corporation

11409 Valley View Road

Eden Prairie, MN 55344-3617 USA

Telephone: (952) 829-9217

Fax: (952) 829-9189

Internet: www.nve.com

e-mail: isoinfo@nve.com

The information provided by NVE Corporation is believed to be accurate. However, no responsibility is assumed by NVE

Corporation for its use, nor for any infringement of patents, nor rights or licenses granted to third parties, which may result from

its use. No license is granted by implication, or otherwise, under any patent or patent rights of NVE Corporation. NVE

Corporation does not authorize, nor warrant, any NVE Corporation product for use in life support devices or systems or other

critical applications, without the express written approval of the President of NVE Corporation.

Specifications are subject to change without notice.

ISB-DS-001-IL710-T

November 2009