MSDM50
MSDM50-Rev0 www.microsemi.com
Oct, 2011 1/3
Module Type
TYPE VRRM VRSM
MSDM50-08
MSDM50-12
MSDM50-16
MSDM50-18
800V
1200V
1600V
1800V
900V
1300V
1700V
1900V
Maximum Ratings
Symbol Item Conditions Values Units
ID Output current (D.C) Tc=110℃ 50 A
IFSM Forward surge current, max. t=10mS Tvj =45℃ 460 A
i2t Value for fusing 1050 A2s
Visol Isolation Breakdown Voltage(R.M.S) a.c.50HZ;r.m. s.;1min 3000 V
Tvj Operating Junction Tempe rature -40 to +150 ℃
Tstg Storage Temperature -40 to +150 ℃
To terminals(M5) 3±15% Nm
Mounting
Torque To heatsink(M5) 5±15% Nm
Weight Approximate Weight Module 145 g
Thermal Characteristics
Symbol Item Conditions Values Units
Rth(j-c) Thermal Impedance, max. Per Module 0.28 ℃/W
Electrical Characteristics
Glass Passivated Three
Phase Rectifier Bridge
VRRM 800 to 1800V
ID 50 Amp
Features
y Three phase brid ge rectifier
y Blocking voltage:80 0 to 1800V
y Heat transfer through aluminum oxide DBC
ceramic isolated metal baseplate
y Glass passivated chip
Applications
y Three phase rectifiers for power supplies
y Rectifiers for DC motor field supplies
y Battery charger rectifiers
y In
p
ut rectifiers for variable fre
q
uenc
y
drives
Circuit
-
+
~
~
~
Values
Symbol Item Conditions Min. Typ. Max. Units
VFM Forward Voltage Drop, max. T=25℃ IF =150A 1.45 1.80 V
IRRM Repetitive Peak Reverse Current,
max. Tvj =25℃ VRD=VRRM
Tvj =150℃ VRD=VRRM
0.3
5 mA
mA
MSDM50
Document Number: MSDM50-Rev0 www.microsemi.com
Oct.19, 2011 2/3
Performance Curves
Fig1. Forward Characteristics
Fig3. Transient thermal impedance
Fi
g
2. Power dissi
p
ation
Fig4. Max Non-Repetitive Forward Surge
Current
Fig5.Forward Current Derating Curve
Zth(j-C
1 10 cycles 100
0 Tc 50 100 ℃ 150
50HZ
0.28
℃/ W
0.14
0 0.001 0.01 0.1 1.0 10 S 100
0 VF 0.5 1.0 1.5 V 2.0
0 ID 25 A 50
200
A
150
100
50
IF
0
25℃
- - -125℃
max.
typ.
120
W
60
Pvtot
0
600
A
400
200
0
100
A
80
60
40
20
ID
0
MSDM50
Document Number: MSDM50-Rev0 www.microsemi.com
Oct.19, 2011 3/3
Package Outline Information
CASE：M2-1
Dimensions in mm
