RF01021, Rev. B (8/15/13) ©2013 Microsemi Corporation Page 1 of 7
MSMBJSAC5.0 – MSMBJSAC75(e3)
Available
500 Watt Low Capacitance
Transient Voltage Suppressors
Screening in
reference to
MIL-PRF-19500
available
DESCRIPTION
This series of MSMBJSAC5.0 – MSMBJSAC75 high reliability Transient Voltage
Suppressors are featured in the SMBJ J-bend design (DO-214AA package) which allows for
greater PC board mounting density. They feature unidirectional construction and working
standoff voltage (Vwm) selections from 5 to 75 volts. It is available with either SnPb or RoHS
compliant matte-tin plating.
DO-214AA
J-bend Package
NOTE: All SMB series are
equivalent to prior SMS package
identifications.
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
• Unidirectional low-capacitance device (30 pF). For bidirectional applications, see Figure 6.
• 3σ lot norm screening performed on standby current ID
• 100% surge testing of all devices
• Suppresses transients up to 500 W Peak Pulse Power (PPP) @ 10/1000 μs
• Working standoff voltage (VWM) values from 5 to 75 V
• Various screenings in reference to MIL-PRF-19500 are available. Refer to Hirel Non-Hermetic
Product Portfolio for more details on the screening options.
(See part nomenclature for all options.)
• High reliability controlled devices have wafer fabrication and assembly lot traceability
• Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020B
• RoHS compliant versions available
APPLICATIONS / BENEFITS
• Low capacitance for data-line protection to 10 MHz
• Protection for fast data rate lines in aircraft up to:
- RTCA/DO-160G - Waveform 4 and Waveform 5A (also see MicroNote 130)
- ARINC 429, Part 1, paragraph 2.4.1.1 up to bit rates of 100 kb/s
• ESD and EFT protection per IEC61000-4-2 and IEC61000-4-4 respectively
• Secondary lightning protection per IEC 61000-4-5 with 42 ohms source impedance:
Class 1: MSMBJSAC5.0 to MSMBJSAC75
Class 2: MSMBJSAC5.0 to MSMBJSAC45
Class 3: MSMBJSAC5.0 to MSMBJSAC22
Class 4: MSMBJSAC5.0 to MSMBJSAC10
• Secondary lightning protection per IEC 61000-4-5 with 12 ohms source impedance:
Class 1: MSMBJSAC5.0 to MSMBJSAC26
Class 2: MSMBJSAC5.0 to MSMBJSAC15
Class 3: MSMBJSAC5.0 to MSMBJSAC7.0
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
RF01021, Rev. B (8/15/13) ©2013 Microsemi Corporation Page 2 of 7
MSMBJSAC5.0 – MSMBJSAC75(e3)
MAXIMUM RATINGS @ 25 ºC unless otherwise stated
Parameters/Test Conditions
Symbol
Value
Unit
Junction and Storage Temperature
TJ and TSTG
-65 to +150
oC
Peak Pulse Power Dissipation @ 10/1000
µ
s (1)
P
PP
500
W
Average Power Dissipation @ TL = +75 oC (2)
PM(AV)
2.5
W
Clamping Speed (0 volts to V(BR) min, theoretical)
tclamping
< 5
ns
Solder Temperature @ 10 s
260
oC
Notes: 1. With impulse repetition rate (duty factor) of 0.01 % max. TVS devices are not typically used for dc
power dissipation and are instead operated ≤ VWM (rated standoff voltage) except for transients that
briefly drive the device into avalanche breakdown (V(BR) to VC region) of the TVS element. Also see
Figures 5 and 6 for further protection details in rated peak pulse power for unidirectional and
bidirectional configurations respectively.
2. At 3/8 (10 mm) lead length from body.
MECHANICAL and PACKAGING
• CASE: Void-free transfer molded thermosetting epoxy body meeting UL94V-0 requirements
• TERMINALS: Tin-lead or RoHS compliant annealed matte-tin plating readily solderable per MIL- STD-750, method 2026
• MARKING: Part number
• POLARITY: Cathode end banded
• TAPE & REEL option: Standard per EIA-481-1-A (add “TR” suffix to part number). Consult factory for quantities.
• WEIGHT: Approximately 0.1 grams
• See Package Dimensions on last page.
PART NOMENCLATURE
M SM B J SAC 5.0 e3
M
MA
MX
MXL
*(see Hirel Non-Hermetic
Product Portfolio
Surface Mount Package
600 W Po wer Level
RoHS Compli ance
e3 = RoHS compliant
Blank = non-RoHS compliant
Stand-Off Voltage (VWM)
(see Electrical Characteristics
table)
Series ID
RF01021, Rev. B (8/15/13) ©2013 Microsemi Corporation Page 3 of 7
MSMBJSAC5.0 – MSMBJSAC75(e3)
SYMBOLS & DEFINITIONS
Symbol
Definition
CT
Total Capacitance: The total small signal capacitance between the diode terminals of a complete device.
I(BR)
Breakdown Current: The current used for measuring Breakdown Voltage V(BR).
ID
Standby Current: The current through the device at rated stand-off voltage.
I
PP
Peak Impulse Current: The maximum rated random recurring peak impulse current or nonrepetitive peak impulse
current that may be applied to a device. A random recurring or nonrepetitive transient current is usually due to an
external cause, and it is assumed that its effect will have completely disappeared before the next transient arrives.
P
PP
Peak Pulse Power. The rated random recurring peak impulse power or rated nonrepetitive peak impulse power. The
impulse power is the maximum-rated value of the product of IPP and VC.
V(BR)
Breakdown Voltage: The voltage across the device at a specified current I(BR) in the breakdown region.
V
C
Clamping Voltage: The voltage across the device in a region of low differential resistance during the application of an
impulse current (IPP) for a specified waveform.
VWM Working Standoff Voltage: The maximum-rated value of dc or repetitive peak positive cathode-to-anode voltage that
may be continuously applied over the standard operating temperature.
ELECTRICA L CHARACTERISTICS @ 25 oC unless otherwise stated
*See Figure 3. For the MSMBJSAC75, the maximum clamping voltage VC is at the maximum rated Peak Pulse Current (IPP ) of 4.1 Amps.
Clamping Factor: The ratio of the numerical value of VC to V (BR) is typically 1.4 @ full rated power, 1.20 @ 50% rated power. Also see MicroNote
108.
Note 1: A Transient Voltage Suppressor is normally selected according to voltage (VWM), which should be equal to or greater than the dc or
continuous peak operating voltage level.
Note 2: Test in TVS avalanche direction. Do not pulse in “forward” direction. See section for Application Schematics herein.
PART
NUMBER
WORKING
STAND-
OFF
VOLTAGE
(Note 1)
VWM
BREAKDOWN
VOLTAGE
VBR @ IBR
1.0mA
V(BR)
MAXIMUM
STANDBY
CURRENT
ID @ VWM
MAXIMUM
CLAMPING
VOLTAGE
VC @ IP = 5.0A
MAXIMUM
PEAK
PULSE
CURRENT*
RATING
(Note 2)
IPP
MAXIMUM
CAPACITANCE
@ 0 Volts
f = 1 MHz
CT
WORKING
INVERSE
BLOCKING
VOLTAGE
VWIB
INVERSE
BLOCKING
LEAKAGE
CURRENT
@ VWIB
IIB
PEAK
INVERSE
BLOCKING
VOLTAGE
VPIB
Volts
Volts (min)
µA
Volts
Amps
pF
Volts
µA
Volts
MSMBJSAC5.0
MSMBJSAC6.0
5.0
6.0
7.60
7.90
300
300
10.0
11.2
44
41
30
30
75
75
10
10
100
100
MSMBJSAC7.0
MSMBJSAC8.0
7.0
8.0
8.33
8.89
300
100
12.6
13.4
38
36
30
30
75
75
10
10
100
100
MSMBJSAC8.5
MSMBJSAC10
8.5
10
9.44
11.10
50
5.0
14.0
16.3
34
29
30
30
75
75
10
10
100
100
MSMBJSAC12
MSMBJSAC15
12
15
13.30
16.70
5.0
5.0
19.0
23.6
25
20
30
30
75
75
10
10
100
100
MSMBJSAC18
MSMBJSAC22
18
22
20.00
24.40
5.0
5.0
28.8
35.4
15
14
30
30
75
75
10
10
100
100
MSMBJSAC26
MSMBJSAC36
26
36
28.90
40.0
5.0
5.0
42.3
60.0
11.1
8.6
30
30
75
75
10
10
100
100
MSMBJSAC45
MSMBJSAC50
45
50
50.00
55.50
5.0
5.0
77.0
88.0
6.8
5.8
30
30
150
150
10
10
200
200
MSMBJSAC75 75 83.3 5.0 121 4.1 30 150 10 200
RF01021, Rev. B (8/15/13) ©2013 Microsemi Corporation Page 4 of 7
MSMBJSAC5.0 – MSMBJSAC75(e3)
GRAPHS
tw – Pulse Width
FIGURE 1
Peak Pulse Power vs Pulse Time
TL – Lead Temperature - °C
Figure 2
Rated Power vs Lead Temperature
(At Lead Length = 3/8”)
(PPP) – Peak Pulse Power (kW)
% of Rated Power
RF01021, Rev. B (8/15/13) ©2013 Microsemi Corporation Page 5 of 7
MSMBJSAC5.0 – MSMBJSAC75(e3)
GRAPHS (continued)
t – Time (msec)
Figure 3
Peak Pulse Current vs Time
I
PP
– Peak Pulse Current (% I
PP
)
TEST WAVEFORM
PARAMETERS
tr = 10
µ
sec
td = 1000 µsec
RF01021, Rev. B (8/15/13) ©2013 Microsemi Corporation Page 6 of 7
MSMBJSAC5.0 – MSMBJSAC75(e3)
PACKAGE DIMENSIONS
PAD LAYOUT
See applications schematics on next page.
Dimensions
Ltr
Inch
Millimeters
Min
Max
Min
Max
A
0.077
0.083
1.96
2.10
B
0.160
0.180
4.06
4.57
C
0.130
0.155
3.30
3.94
D
0.205
0.220
5.21
5.59
E
0.077
0.104
1.95
2.65
L
0.030
0.060
0.76
1.52
SMBJ (DO-214AA)
Ltr
Inch
Millimeters
A
0.260
6.60
B
0.085
2.16
C
0.110
2.79
SMBJ (DO-214AA)
RF01021, Rev. B (8/15/13) ©2013 Microsemi Corporation Page 7 of 7
MSMBJSAC5.0 – MSMBJSAC75(e3)
APPLICATION SCHEMATICS
The TVS low capacitance device configuration is shown in Figure 4. As a further option for unidirectional applications, an additional low capacitance
rectifier diode may be used in parallel in the same polarity direction as the TVS as shown in Figure 5. In applications where random high voltage
transients occur, this will prevent reverse transients from damaging the internal low capacitance rectifier diode and also provide a low voltage conducting
direction. The added rectifier diode should be of similar low capacitance and also have a higher reverse voltage rating than the TVS clamping voltage
VC. The Microsemi recommended rectifier part number is the “SMBJLCR60” for the application in Figure 5. If using two (2) low capacitance TVS
devices in anti-parallel for bidirectional applications, this added protective feature for both directions (including the reverse of each rectifier diode) is also
provided. The unidirectional and bidirectional configurations in Figure 5 and 6 will both result in twice the capacitance of Figure 4.
Figure 4 Figure 5 Figure 6
TVS with internal Optional Unidirectional Optional Bidirectional
Low capacitance diode configuration (TVS and configuration (two TVS
separate rectifier diode devices in anti-parallel)
in parallel)