TCS800 - GHz Technology, Inc.

R.-.061300

GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION

PLEASE CHECK OUR WEB SITE AT WWW.GHZ.COM OR CONTACT OUR FACTORY DIRECT.

GHz Technology In c. 3000 Oakmead Village Dr ive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8 031 Fax 408 / 986-8120

TCS800

800 Watts, 50 Volts, Pulsed

Avionics 1030 MHz

GENERAL DESCRIPTION

The TCS800 is a high power COMMON BASE bipolar transistor. It is

designed for pulsed systems in the frequency band 1030 MHz, with the pulse

width and duty required for TCAS applications. The device has gold thin-film

metallization and diffused ballasting for proven highest MTTF. The transistor

includes input and output prematch for broadband capability. Low thermal

resistance package reduces junction temperature, extends life.

CASE OUTLINE

55SM Style 1

ABSOLUTE MAXIMUM RATINGS

Maximum Pow er Dissip at ion

Device Dissipation @2 5 °C1 1944 W

Maximum Voltage and Current

Collector to Base Voltage (BVces)65V

Emitter to Base Voltage (B Vebo)3.5 V

Collector Current (Ic)50A

Maxi mum Temper at u r e s

Storage Temperature -65 to +200 °C

Ope rating Junction Temperature +230 °C

ELECTRICAL CHAR ACTE R ISTICS @ 25°C

SYMB OL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS

Pout Power Out F = 1030 MHz 800 W

Pin Power Input 120 W

PgPower Gain 8.0 9.0 dB

ηcCollector Efficiency 45 %

RLInput Return Loss

VCC = 50 Volts

PW = 32 µsec

DF = 1%

-12 dB

Pd Pulse Droop 0.5 dB

VSWR Load Mismatch To lerance F = 1030 MHz 4:1

FUNCTIONAL CHARACTERISTICS @ 25°C

BVebo* Emitter to Base Breakdown Ie = 70 mA 3.5 V

BVces Collector to Emitter Breakdown Ic = 100 mA 65 V

hFE* DC – Current Gain Vce = 5V, Ic = 5A 20

θjc1Thermal Resista nce 0.09 °C/W

NOTE 1: At rated output power and pulse conditions.

*: Not measureable due to internal EB returns