International Rectifier HEXFET Power MOSFET Dynamic dv/dt Rating Logic-Level Gate Drive Rpsvon) Specified at Vas=4V & 5V @ 175C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements Description Third Generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low PD-9.558C IRLZ34 Voss = 60V 5 Ip = 30A on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. Absolute Maximum Ratings TO-220AB Parameter Max. Units Ip @ To = 25C Continuous Drain Current, Ves @ 5.0 V 30 Ip @ Tc = 100C | Continuous Drain Current, Vas @ 5.0 V 21 A Ipm Pulsed Drain Current 110 Pp @ Tc=25C_ | Power Dissipation 88 Ww Linear Derating Factor 0.59 WPCC Vas Gate-to-Source Voltage +10 Vv Eas Single Pulse Avalanche Energy @ 220 mJ dv/dt Peak Diode Recovery dv/dt_ 45 Vins Ty Operating Junction and -55 to +175 Tst Storage Temperature Range C Soldering Temperature, for 10 seconds 300 (1.6mm from case) Mounting Torque, 6-32 or M3 screw 10 Ibfsin (1.1 Nem) Thermal Resistance Parameter Min. Typ. Max. Units Rec Junction-to-Case _ _ 1.7 Recs Case-to-Sink, Flat, Greased Surface _ 0.50 = CAN Raa Junction-to-Ambient _ _ 62 1481IRLZ34 | Electrical Characteristics @ Ty = 25C (unless otherwise specified) Parameter Min. | Typ. | Max. | Units Test Conditions Vierypss _Drain-to-Source Breakdown Voltage 60 _ _ V_ | Ves=0V, Ip= 250A AV@rjpss/ATy| Breakdown Voltage Temp. Coefficient {0.070} | VC | Reference to 25C, Ib= 1mA Rosvon) Static Drain-to-Source On-Resistance = _| 0.050 Q Vas=5.0V, Ine18A = -- | 0.070 Vas=4.0V, IpD=15A @ Vasith Gate Threshold Voltage 1.0 _ 2.0 V__ | Vos=Ves, Ip= 250A Ots Forward Transconductance 12 _ _ S| Vps=25V, Ilp=18A @ lbss Drain-to-Source Leakage Current 26 yA Vos=60V, Vas=0V _ _ 250 Vos=48V, Vas=0V, Tj=150C less Gate-to-Source Forward Leakage = 100 nA Ves=10V Gate-to-Source Reverse Leakage = } -100 Ves=-10V Qg Total Gate Charge = = 35 Ip=30A Qgs Gate-to-Source Charge - | | 74 | nC | Vps=48v Qga Gate-to-Drain ("Miller") Charge = = 25 Ves=5.0V See Fig. 6 and 13 tavon) Turn-On Delay Time = 14 Vpp=30V tr Rise Time _ 170 = ns Ip=30A taotty Turn-Off Delay Time = 30 _ Re=6.00, tt Fall Time = 56 _ Rp=1.0Q See Figure 10 @ Lo Internal Drain inductance _ 45 _ Bam oer ick nH | from package lis ) Ls Internal Source Inductance 175 | and center of die contact 8 Ciss Input Capacitance | 1600; Ves=0V Coss Output Capacitance | 660 | pF | Vps=25V Crss Reverse Transfer Capacitance _ 170 _ f=1.0MHz See Figure 5 Source-Drain Ratings and Characteristics Parameter Min. | Typ. | Max. | Units Test Conditions Is Continuous Source Current _. _ 30 MOSFET symbol! D (Body Diode) A showing the Ism Puised Source Current _ _ 410 integral reverse aq (Body Diode) p-n junction diode. s Vsp Diode Forward Voltage _ 1.6 V | Ty=25C, Is=30A, Ves=0V @ tr Reverse Recovery Time _ 120 | 180 | ns_ | Ty=25C, Ir=30A Qn Reverse Recovery Charge | 0.70] 1.3 uC | di/dt=100A/us @ ton Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+Lp) Notes: @ Repetitive rating; pulse width limited by @ Igps30A, di/dts200A/1s, Vop<ViBR)Dss, max. junction temperature (See Figure 11) Tys175C Vop=25V, starting Ty=25C, L=285yH Pulse width < 300 ps; duty cycle <2%. Rg=25Q, las=30A (See Figure 12) 1482IRLZ34 Ip, Drain Current (Amps) Ip, Drain Current (Amps) eo Q & = 5 O & a 2 2.259 20us PULSE WIDTH 20us PULSE WIDTH To = 259C Te = 175C tovl 40 so! sot 100 sot Vps, Drain-to-Source Voltage (volts) Vos, Drain-to-Source Voltage (volts) Fig 1. Typical Output Characteristics, Fig 2. Typical Output Characteristics, Tco=25C To=175C 2.5 2.0 (Normalized) Vog = 25V 20us PULSE WIDTH Rpgon), Drain-to-Source On Resistance ves = SV . . 3. a0 4. 5.0 C60 -40 -20 0 20 40 60 80 100 120 140 160 180 Vas, Gate-to-Source Voltage (volts) Ty, Junction Temperature (C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 1483IRLZ34 | 3000 Cgs + Cgq: Cag SHORTED 2 2500 cae + & o o iL 2000 & $ Q E00 S oO oO 1000 2 oO Oo 500 a Crgs 2 . 0 SEE FIGUAE 13 $00 101 0 10 20 50 Vps, Drain-to-Source Voltage (volts) Qe, Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage 108 OPERATION IN THIS AREA LIMITED ry 5 BY Ros (ON) E <x a 2 c E x 108 a3 o 175% 6 5 & & oO 2 a O 2 c D & 2) gs 410 Qa a a fom ~ 5 a T on 2 f& Ty=175C Ves = OV SINGLE 0 0 . . . 3.0 bt 2 5 4 2 5 10 2 5 102 2 5 403 Vsp, Source-to-Drain Voltage (volts) Vps, Drain-to-Source Voltage (volts) Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area Forward Voltage 1484Ip, Drain Current (Amps) IRLZ34 Vos WN D.U.T. x =! Vpn YE5.0V Pulse Width < tus Duty Factor < 0.1% iL Fig 10a. Switching Time Test Circuit el Nf \ | | | | | 10% t + | | | | _A t T 25 50 75 100 125.2150. 175 Ves", . _\ Tc, Case Temperature (C) tdion) te tao) te Fig 9. Maximum Drain Current Vs. Fig 10b. Switching Time Waveforms Case Temperature 10 an 0.4 7 Thermal Response (Zgjc) SINGLE PULSE (THERMAL RESPONSE) tele. | NOTES: 1. DUTY FACTOR, D=t4/t2 2. PEAK Ty=Poy x Zthjc + Te 10 105 10-4 1073 10-2 O.4 4 10 t;, Rectangular Pulse Duration (seconds) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 1485IRLZ34 Vary tp to obtain Vps > required las 600 Sy 500 E > 2 400 c 1 uw - oO Fig 12a. Unclamped Inductive Test Circuit 2m oa D 200 wo + 'p _ 2 100 Lil Vps-_ / 0 / 25 50 78 100 125 150 175 / Starting Ty, Junction Temperature(C) as TT Fig 12. Maximum Avalanche Energy Fig 12b. Unclamped Inductive Waveforms Vs. Drain Current Current Regulator Ves Vo ama FL i Charge Current Sampting Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit Appendix A: Figure 14, Peak Diode Recovery dv/dt Test Circuit - See page 1505 Appendix B: Package Outline Mechanical Drawing See page 1509 Appendix C: Part Marking Information See page 1516 bx : Par Intemational Appendix E: Optional Leadforms - See page 1525 R ectifi er 1486