ECP203 2 Watt, High Linearity InGaP HBT Amplifier * +32 dBm P1dB * +46 dBm Output IP3 * Single Positive Supply (+5V) * Lead-free/green/RoHS-compliant SOIC-8 and 16pin 4mm QFN packages Applications * * * * WLAN / WiBro RFID DMB Fixed Wireless Parameter Operational Bandwidth Test Frequency Gain Input Return Loss Output Return Loss Output P1dB Output IP3 (2) Noise Figure Test Frequency Gain Output P1dB Output IP3 (2) Operating Current Range, Icc (3) Device Voltage, Vcc Gnd Gnd Gnd 14 13 12 Gnd Gnd 2 11 RF OUT RF IN 3 10 RF OUT 9 Gnd Gnd 4 5 6 7 8 ECP203D The ECP203 is targeted for use as a driver amplifier in wireless infrastructure where high linearity and medium power is required. An internal active bias allows the ECP203 to maintain high linearity over temperature and operate directly off a single +5V supply. This combination makes the device an excellent candidate for driver amplifier stages in wireless-LAN, digital multimedia broadcast, or fixed wireless applications. The device can also be used in next generation RFID readers. Specifications (1) 15 Gnd * 9.5 dB Gain @ 2650 MHz 16 Vref 1 Gnd * 10 dB Gain @ 2450 MHz The ECP203 is a high dynamic range driver amplifier in a low-cost surface mount package. The InGaP/GaAs HBT is able to achieve high performance for various narrowband-tuned application circuits with up to +46 dBm OIP3 and +32 dBm of compressed 1dB power. It is housed in Lead-free/Green/RoHS-compliant SOIC-8 and 16-pin 4x4mm QFN packages. All devices are 100% RF and DC tested. Vbias * 2300 - 2700 MHz Functional Diagram Gnd Product Description Gnd Product Features Vref 1 8 Vbias GND 2 7 RF OUT RF IN 3 6 RF OUT GND 4 5 GND ECP203G Typical Performance (4) Units Min MHz MHz dB dB dB dBm dBm dB MHz dB dBm dBm mA V Typ 2300 9 +31 700 2450 10 8.5 8.5 +32 +46 6.3 2650 9.5 +32 +46 800 +5 Max Parameter Units Typical 2700 Frequency S21 - Gain S11 S22 Output P1dB Output IP3 Noise Figure Supply Bias (3) MHz dB dB dB dBm dBm dB 2350 2450 2650 10 10 9.5 -8 -8.5 -19.5 -15.5 -8.5 -11.5 +32 +32 +32 +47 +46 +46 6.3 6.3 6.3 +5 V @ 800 mA 4. Typical parameters reflect performance in a tuned application circuit at +25 C. 900 1. Test conditions unless otherwise noted: 25 C, Vsupply = +5 V in tuned application circuit. 2. 3OIP measured with two tones at an output power of +17 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. 3. This corresponds to the quiescent current or operating current under small-signal conditions into the Vbias and RF out pins. It is expected that the current can increase by an additional 200 mA at P1dB. Pin 1 is used as a reference voltage for the internal biasing circuitry. It is expected that Pin 1 will pull 22mA of current when used with a series bias resistor of R1=15. (ie. total device current typically will be 822 mA.) Absolute Maximum Rating Parameter Storage Temperature RF Input Power (continuous) Device Voltage Device Current Device Power Thermal Resistance, Rth Junction Temperature Rating -65 to +125 C +28 dBm +8 V 1400 mA 8W 17.5 C/W +200 C Ordering Information Part No. Description ECP203D-G 2 Watt InGaP HBT Amplifier ECP203G-G 2 Watt InGaP HBT Amplifier (lead-free/green/RoHS-compliant 16-pin 4x4mm QFN Package) (lead-free/green/RoHS-compliant SOIC-8 Package) Standard tape / reel size = 500 pieces on a 7" reel Operation of this device above any of these parameters may cause permanent damage. Specifications and information are subject to change without notice WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com, www.TriQuint.com Page 1 of 9 May 2009 ECP203 2 Watt, High Linearity InGaP HBT Amplifier Typical Device Data (QFN 4 X 4) S-Parameters (VCC = +5 V, ICC = 800 mA, T = 25 C, unmatched 50 ohm system) S22 0.8 0 6 0. 2. 2. 0. 4 3. DB(GMax()) 0 4. 0 4. 5.0 0.2 15 3. 0 10.0 10.0 5.0 4.0 3.0 2.0 1.0 0.8 0.6 0.4 0.2 10.0 5.0 4.0 3.0 2.0 1.0 0.8 0.6 0.4 0.2 0 0 -10.0 Gain (dB) 10.0 10 -10.0 0 -4 .0 -3 . 4 -2 Swp Min 2GHz -1.0 Swp Min 2GHz -0.8 -0 .6 3 -1.0 Frequency (GHz) 2.8 -0.8 2.6 .6 2.4 -0 2.2 -2 .0 .0 0 2 - -5. . -0 3. 0 .4 -0 0 2 -0 . 2 -4 .0 -5. 0 -0. 5 0 5.0 0. 2 20 0. 4 Gain / Maximum Stable Gain DB(|S(2,1)|) Swp Max 3GHz 0 6 0. 0. 8 1.0 Swp Max 3GHz 1.0 S11 Notes: The gain for the unmatched device in 50 Ohm system is shown as the trace in black color. For a tuned circuit for a particular frequency, it is expected that actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in the dashed red line. The impedance plots are shown from 2 - 3 GHz, with markers placed at 2.0 - 3.0 GHz in 0.1 GHz increments. S-Parameters (VCC = +5 V, ICC = 800 mA, T = 25 C, unmatched 50 ohm system, calibrated to device leads) Freq (GHz) S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) 2 -3.47 119.00 1.66 16.07 -40.39 -44.75 -0.90 2.1 -4.38 113.65 1.77 8.68 -39.83 -56.07 -0.73 2.2 -5.64 109.11 2.08 -0.45 -39.08 -62.38 -0.77 2.3 -7.46 105.86 2.29 -10.35 -37.86 -88.93 -0.81 2.4 -10.26 107.44 2.21 -22.19 -37.62 -82.33 -0.92 2.5 -13.43 125.78 2.04 -33.19 -37.98 -95.60 -0.74 2.6 -13.11 162.69 1.80 -47.53 -37.98 -119.59 -0.80 2.7 -9.53 177.72 1.22 -60.84 -38.05 -150.04 -0.70 2.8 -6.50 178.14 0.07 -74.55 -39.73 -156.73 -0.70 2.9 -4.64 171.86 -1.09 -85.18 -37.86 -161.71 -0.75 3 -3.34 164.77 -2.28 -96.66 -38.71 -166.97 -0.78 S22 (ang) 167.78 166.99 164.76 164.27 162.74 161.75 159.67 158.22 155.86 153.95 153.25 Application Circuit PC Board Layout Circuit Board Material: .014" Getek, single layer, 1 oz copper, Microstrip line details: width = .026", spacing = .026" The silk screen markers `A', `B', `C', etc. and `1', `2', `3', etc. are used as placemarkers for the input and output tuning shunt capacitors - C8 and C9. The markers and vias are spaced in .050" increments. Specifications and information are subject to change without notice WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com, www.TriQuint.com Page 2 of 9 May 2009 ECP203 2 Watt, High Linearity InGaP HBT Amplifier 2350 MHz Reference Design Typical RF Performance at 25 C Frequency S21 - Gain S11 - Input Return Loss S22 - Output Return Loss Output P1dB Output IP3 (+17 dBm / tone, 1 MHz spacing) Noise Figure Device / Supply Voltage Quiescent Current (1) +5 V RES ID=R1 R=15 Ohm 2350 MHz 9.8 dB -8.5 dB -12 dB +32 dBm +5.6 V zener CAP ID=C5 C=1000 pF CAP ID=C4 C=10000000 pF RES ID=R2 R=22 Ohm PORT P=1 Z=50 Ohm RES ID=R3 R=51 Ohm CAP ID=C1 C=56 pF RES ID=C11 R=0 Ohm TLINP ID=FR1 Z0=50 Ohm L=25 mil Eeff=3.16 Loss=0 F0=0 MHz 16 13 14 15 13 16 11 2 121 21 1 112 SUBCKT ID=ECP203D NET="QFN" 3 10 +47 dBm 15 14 CAP ID=C7 C=1000 pF CAP ID= C6 C=10 pF 94 9 6.3 dB +5 V 800 mA size 1008 103 4 CAP ID=C2 C=56 pF *The transmission line length are from the edge of the ECP203D pins to the center of the component. All passive components are of size 0603 unless otherwise noted. CAP ID=C8 C=.5 pF 8 5 76 7 6 TLINP ID= FR2 Z0=50 Ohm L=425 mil Eeff=3.16 Loss=0 F0=0 MHz IND ID=L1 L=18 nH TLINP ID=FR4 Z0=50 Ohm L=75 mil Eeff=3.16 Loss=0 F0=0 MHz 85 This component should be placed at silk scr een marker "A" on the WJ evaluation board as shown. CAP ID=C3 C=56 pF PORT P=2 Z=50 Ohm CAP ID=C9 C= 2.7 pF This component should be placed at silk screen marker "2" on the WJ evaluation board as shown. 1. This corresponds to the quiescent current or operating current under small-signal conditions into pins 10, 11, and 16. 12 -5 11 -10 10 -15 9 S11 -25 2.25 S22 47 33 32 46 OIP3 P1dB 31 S21 44 2.25 7 2.30 34 45 8 -20 48 P1dB (dBm) 0 Gain (dB) ECP203D 2.3 - 2.4GHz OIP3 (dBm) S11 & S22 (dB) ECP203D 2.3 - 2.4GHz 2.35 2.40 2.45 2.3 Frequency (GHz) 2.35 30 2.45 2.4 Frequency (GHz) 2450 MHz Application Circuit (ECP203D-PCB2450) Typical RF Performance at 25 C (+17 dBm / tone, 1 MHz spacing) +5.6 V zener CAP ID=C5 C=1000 pF CAP ID=C4 C=10000000 pF RES ID=R2 R=22 Ohm CAP ID=C7 C=1000 pF CAP ID= C6 C=10 pF PORT P=1 Z=50 Ohm RES ID=R3 R=51 Ohm CAP ID=C1 C=56 pF RES ID=C11 R=0 Ohm +46 dBm TLINP ID=FR1 Z0=50 Ohm L=25 mil Eeff=3.16 Loss=0 F0=0 MHz 13 16 115 4 15 14 16 13 121 11 2 2 11 112 SUBCKT ID=ECP203D NET="QFN" 30 1 6.3 dB +5 V 800 mA CAP ID=C2 C=56 pF *The transmission line length are from the edge of the ECP203D pins to the center of the component. All passive components are of size 0603 unless otherwise noted. CAP ID=C8 C=.5 pF 94 58 7 6 6 7 85 This component should be placed at silk screen marker "A" on the WJ evaluation board as shown. 11 -10 10 -15 9 -20 8 2.40 Gain (dB) -5 -25 2.35 TLINP ID=FR4 Z0=50 Ohm L=125 mil Eeff=3.16 Loss=0 F0=0 MHz CAP ID=C3 C=56 pF PORT P=2 Z=50 Ohm CAP ID=C9 C= 2.2 pF ECP203D 2.4 - 2.5GHz 12 OIP3 (dBm) S11 & S22 (dB) ECP203D 2.4 - 2.5GHz 0 S22 size 1008 This component should be placed at silk screen marker "3" on the WJ evaluation board as shown. 1. This corresponds to the quiescent current or operating current under small-signal conditions into pins 10, 11, and 16. S11 TLINP ID= FR2 Z0=50 Ohm L=425 mil Eeff=3.16 Loss=0 F0=0 MHz IND ID=L1 L=18 nH 103 49 Noise Figure Device / Supply Voltage Quiescent Current (1) +5 V RES ID=R1 R=15 Ohm 2450 MHz 10.4 dB -12.5 dB -12.5 dB +32 dBm 47 34 46 33 45 32 OIP3 P1dB 44 31 P1dB (dBm) Frequency S21 - Gain S11 - Input Return Loss S22 - Output Return Loss Output P1dB Output IP3 S21 2.45 Frequency (GHz) 2.50 7 2.55 43 2.35 2.4 2.45 2.5 30 2.55 Frequency (GHz) Specifications and information are subject to change without notice WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com, www.TriQuint.com Page 3 of 9 May 2009 ECP203 2 Watt, High Linearity InGaP HBT Amplifier 2650 MHz Application Circuit (ECP203D-PCB2650) Typical RF Performance at 25 C Frequency S21 - Gain S11 - Input Return Loss S22 - Output Return Loss Output P1dB Output IP3 (+17 dBm / tone, 1 MHz spacing) Noise Figure Device / Supply Voltage Quiescent Current (1) 2650 MHz 9.4 dB -29.5 dB -9.5 dB +32 dBm Vsupply = +5V +5.6V Ze ner RES ID=R1 R=15 Ohm CAP ID=C4 C=1e7 pF CAP ID=C5 C=1000 pF CAP ID=C7 C=1000 pF RES ID=R2 R=22 Ohm CA P ID=C6 C=10 pF +47 dBm 6.3 dB +5 V 800 mA P ORT P =1 Z=50 Ohm TLINP ID=TL1 Z0=50 Ohm L=75 mi l Eeff=3.16 Los s=0 F0=0 GHz RES ID=R3 R=51 Ohm RE S ID=C11 R=0 Ohm CA P ID=C1 C=56 pF CA P ID=C2 C=56 pF 16 15 14 13 12 1 S UBCKT ID=ECP203 NET=" QFN" 2 11 3 CA P ID=C3 C=56 pF PORT P=2 Z=50 Ohm 10 4 CAP ID=C8 C=0.5 pF 1. This corresponds to the quiescent current or operating current under small-signal conditions into pins 10, 11, and 16. TLINP ID=TL3 Z0=50 Ohm L=425 m il Eeff=3.16 Los s=0 F0=0 GHz IND ID=L1 L=18 nH si ze 1008 9 5 6 7 8 TLINP ID=TL2 Z0=50 Ohm L=25 m il Eeff=3.16 Loss =0 F0=0 GHz CAP ID=C9 C=2.4 pF The transmission line leng th s are from the ed ge of the device pins to th e center of the component. All passive comp onents are size 0603 unless otherwise noted. 48 34 -5 11 47 33 -10 10 46 32 -15 9 S11 S22 S21 -20 -25 2.55 8 2.60 2.65 Frequency (GHz) 2.70 7 2.75 Gain (dB) 12 45 31 OIP3 P1dB 44 43 2.55 P1dB (dBm) ECP203D 2.6 - 2.7GHz 0 OIP3 (dBm) S11 & S22 (dB) ECP203 2.6 - 2.7GHz C9 sho uld be placed at silk screen marker "2 "on the W J evaluation board as shown. C8 sho uld be placed at silk screen marker "B"on the WJ evaluation b oard as sho wn. 30 2.6 2.65 2.7 29 2.75 Frequency (GHz) Specifications and information are subject to change without notice WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com, www.TriQuint.com Page 4 of 9 May 2009 ECP203 2 Watt, High Linearity InGaP HBT Amplifier Typical Device Data (SOIC-8) S-Parameters (VCC = +5 V, ICC = 800 mA, T = 25 C, unmatched 50 ohm system) 0.8 Swp Max 3GHz 2. 0 6 0. 2. 0 0. Gain / Maximum Stable Gain 1.0 S22 Swp Max 3GHz 6 0. 8 1.0 S11 20 0. 4 DB(GMax()) 3. 0. 4 DB(|S(2,1)|) 0 4. 15 0 3. 0 0 4. 5.0 5.0 0.2 0. 2 10.0 5.0 4.0 3.0 2.0 1.0 0.8 0.6 0.4 0.2 10.0 0 10.0 5.0 4.0 3.0 2.0 1.0 0.8 0.6 10 0.4 0.2 0 Gain (dB) 10.0 -1 0.0 0 Swp Min 2GHz .0 -2 -0 .6 -0.8 -1.0 .6 .0 -2 .4 -0 -0.8 0 -0 -3 . 3 Swp Min 2GHz -1.0 0 Frequency (GHz) 2.8 -4 . 2.6 -5. 2.4 -3 .0 2.2 -4 .0 2 2 -0 . -5. 0 .4 -0 0 -10.0 2 -0. 5 Notes: The gain for the unmatched device in 50 ohm system is shown as the trace in black color. For a tuned circuit for a particular frequency, it is expected that actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in the dashed red line. The impedance plots are shown from 2 - 3 GHz, with markers placed at 2.0 - 3.0 GHz in 0.1 GHz increments. S-Parameters (VCC = +5 V, ICC = 800 mA, T = 25 C, unmatched 50 ohm system, calibrated to device leads) Freq (GHz) S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) 2 -2.47 93.29 1.52 5.56 -39.87 -21.45 -0.85 2.1 -3.14 86.48 1.61 -0.62 -40.28 -38.37 -0.84 2.2 -3.99 79.50 2.06 -9.93 -38.75 -44.73 -0.77 2.3 -5.24 72.21 2.49 -19.19 -39.46 -56.18 -0.91 2.4 -7.30 64.82 2.73 -30.97 -38.17 -73.68 -0.92 2.5 -10.80 62.44 3.08 -43.75 -38.91 -95.46 -0.82 2.6 -16.44 84.08 3.15 -59.32 -40.42 -128.44 -0.74 2.7 -14.08 141.09 2.59 -75.76 -42.11 -144.07 -0.81 2.8 -8.78 147.95 1.74 -91.84 -43.40 165.97 -0.60 2.9 -5.67 140.30 0.69 -105.74 -41.99 148.86 -0.71 3 -3.92 130.41 -0.73 -118.98 -46.07 116.99 -0.71 S22 (ang) 157.53 155.92 153.69 152.59 151.15 149.97 147.33 144.78 141.53 139.50 136.89 Application Circuit PC Board Layout Circuit Board Material: .014" Getek, single layer, 1 oz copper, Microstrip line details: width = .026", spacing = .026" The silk screen markers `A', `B', `C', etc. and `1', `2', `3', etc. are used as placemarkers for the input and output tuning shunt capacitors - C8 and C9. The markers and vias are spaced in .050" increments. Specifications and information are subject to change without notice WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com, www.TriQuint.com Page 5 of 9 May 2009 ECP203 2 Watt, High Linearity InGaP HBT Amplifier 2350 MHz Reference Design Typical RF Performance at 25 C Frequency S21 - Gain S11 - Input Return Loss S22 - Output Return Loss Output P1dB Output IP3 (+17 dBm / tone, 1 MHz spacing) Noise Figure Device / Supply Voltage Quiescent Current (1) +5.6 V zener 2350 MHz 10 dB -7.5 dB -15.5 dB +32 dBm RES ID=R 1 R=15 Ohm CAP ID= C4 C= 10000000 pF CAP ID=C5 C=1000 pF CAP ID=C7 C=10 00 pF R ES ID=R2 R =22 Ohm PORT P=1 Z=50 Ohm R ES ID =R3 R =51 Ohm CAP ID=C 1 C=56 pF RES ID= C16 R=0 Ohm SUBCKT NET= "ECP203G" TLINP ID=FR 1 Z0=50 Ohm L= 25 mil Eeff= 3.16 Loss=0 F0=0 MHz size 1008 TLINP ID= FR4 Z0=50 Ohm L=25 mil Eeff= 3.16 Loss=0 F0=0 MHz CAP ID= C8 C= 1 pF CAP ID=C 2 C=56 pF *The transmission line length are from t he edge of the ECP203G pins to the center of the component. TLIN P ID= FR2 Z0= 50 Ohm L=425 m il Eeff=3. 16 Loss= 0 F0= 0 MHz IND ID= L1 L=18 nH 85 76 67 58 11 22 33 44 +47 dBm 6.3 dB +5 V 800 mA CAP ID=C 6 C=10 pF This component should be place d at silk scre en marker "A" on the WJ evaluation board as show n. PORT P=2 Z=50 Ohm CAP ID= C3 C= 56 pF CAP ID= C9 C=2 .7 pF All passive components are of size 0603 unless otherwise n oted. This component should be placed at silk screen marker "1" on the WJ evaluation board as shown. 1. This corresponds to the quiescent current or operating current under small-signal conditions into pins 6, 7, and 8. 12 48 34 -5 11 47 33 -10 10 46 32 -15 9 -20 2.30 S22 2.35 S21 2.40 45 31 OIP3 P1dB 44 8 S11 -25 2.25 Gain (dB) 0 30 43 2.25 7 2.45 P1dB (dBm) ECP203G 2.3 - 2.4GHz OIP3 (dBm) S11 & S22 (dB) ECP203G 2.3 - 2.4GHz 2.3 Frequency (GHz) 2.35 29 2.45 2.4 Frequency (GHz) 2450 MHz Application Circuit (ECP203G-PCB2450) Typical RF Performance at 25 C (+17 dBm / tone, 1 MHz spacing) Noise Figure Device / Supply Voltage Quiescent Current (1) +5.6 V zener 2450 MHz 10 dB -8.5 dB -8.5 dB +32 dBm CAP ID= C4 C= 10000000 pF CAP ID=C 5 C=1000 pF CAP ID=C 7 C=10 00 pF R ES ID =R2 R =22 Ohm PORT P=1 Z=50 Ohm +46 dBm 6.3 dB +5 V 800 mA R ES ID =R3 R =51 Ohm CAP ID=C 1 C=56 pF RES ID= C16 R=0 Ohm CAP ID=C 2 C=56 pF *The transmission line len gth are f rom the edge of the ECP203G pins t o the center of the co mponent. SUBCKT NET= "ECP203G" TLINP ID =FR 1 Z0=50 Ohm L= 25 mil Eeff= 3.16 Loss=0 F0=0 MHz 11 22 3 3 4 4 85 76 67 58 CAP ID= C8 C=.5 pF This component should be placed at silk screen marker "A" on the WJ evaluation board as shown. -5 10 -10 9 -15 8 S22 S21 -20 7 2.45 Frequency (GHz) 2.50 6 2.55 Gain (dB) 11 OIP3 (dBm) S11 & S22 (dB) TLINP ID= FR4 Z0=50 Ohm L=75 mil Eeff= 3.16 Loss=0 F0=0 MHz CAP ID= C3 C= 56 pF PORT P=2 Z=50 Ohm CAP ID= C9 C=2 .2 pF ECP203G 2.4 - 2.5GHz 0 2.40 size 1008 This component should be placed between silk screen marker "1" & "2" on the WJ evaluation board as shown. ECP203G 2.4 - 2.5GHz -25 2.35 TLIN P ID=FR2 Z0= 50 Ohm L=425 m il Eeff=3. 16 Loss= 0 F0= 0 MHz IND ID= L1 L=18 nH All passive compo nents a re of size 060 3 unless otherwise noted. 1. This corresponds to the quiescent current or operating current under small-signal conditions into pins 6, 7, and 8. S11 CAP ID=C 6 C=10 pF 47 33 46 32 45 31 OIP3 P1dB 44 43 2.35 30 2.4 2.45 2.5 P1dB (dBm) Frequency S21 - Gain S11 - Input Return Loss S22 - Output Return Loss Output P1dB Output IP3 +5 V RES ID=R 1 R=15 Ohm 29 2.55 Frequency (GHz) Specifications and information are subject to change without notice WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com, www.TriQuint.com Page 6 of 9 May 2009 ECP203 2 Watt, High Linearity InGaP HBT Amplifier 2650 MHz Application Circuit (ECP203G-PCB2650) Typical RF Performance at 25 C (+17 dBm / tone, 1 MHz spacing) Noise Figure Device / Supply Voltage Quiescent Current (1) +5.6 V zener 2650 MHz 9.5 dB -19.5 dB -11.5 dB +32 dBm CAP ID= C4 C= 10000000 pF CAP ID=C 5 C=1000 pF CAP ID=C 7 C=10 00 pF R ES ID =R2 R =22 Ohm PORT P=1 Z=50 Ohm +46 dBm 6.3 dB +5 V 800 mA R ES ID =R3 R =51 Ohm CAP ID=C 1 C=56 pF RES ID= C16 R=0 Ohm CAP ID=C 2 C=56 pF *The transmission line length a re from the edge of the ECP203G pins to the cente r of the compon ent. All passive components are of size 0603 unless otherw ise noted. CAP ID=C 6 C=10 pF SUBCKT NET= "ECP203G" TLINP ID =FR 1 Z0=50 Ohm L= 25 mil Eeff= 3.16 Loss=0 F0=0 MHz 11 2 2 33 44 CAP ID= C8 C= .5 pF size 1008 TLINP ID= FR4 Z0=50 Ohm L=13 mil Eeff= 3.16 Loss=0 F0=0 MHz This component should be placed between device a nd silk screen marker "1" on the WJ evaluation board as shown. ECP203G 2.6 - 2.7GHz ECP203G 2.6 - 2.7GHz 34 -5 10 47 33 -10 9 46 32 -15 8 -20 7 -25 2.55 2.60 OIP3 (dBm) 48 Gain (dB) 11 S22 PORT P=2 Z=50 Ohm CAP ID= C9 C=2 .2 pF 0 S11 CAP ID= C3 C= 56 pF This component should be place d at silk scre en marker "A" on the WJ evaluation board as shown. 1. This corresponds to the quiescent current or operating current under small-signal conditions into pins 6, 7, and 8. S11 & S22 (dB) TLIN P ID= FR2 Z0= 50 Ohm L=425 m il Eeff=3. 16 Loss= 0 F0= 0 MHz IND ID= L1 L=18 nH 85 76 67 58 45 31 OIP3 P1dB 44 P1dB (dBm) Frequency S21 - Gain S11 - Input Return Loss S22 - Output Return Loss Output P1dB Output IP3 +5 V RES ID=R 1 R=15 Ohm 30 S21 2.65 Frequency (GHz) 2.70 6 2.75 43 2.55 2.6 2.65 2.7 29 2.75 Frequency (GHz) Specifications and information are subject to change without notice WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com, www.TriQuint.com Page 7 of 9 May 2009 ECP203 2 Watt, High Linearity InGaP HBT Amplifier ECP203G-G (Lead-Free Package) Mechanical Information This package is lead-free/green/RoHS-compliant. The plating material on the leads is NiPdAu. It is compatible with both lead-free (maximum 260 C reflow temperature) and lead (maximum 245 C reflow temperature) soldering processes. Outline Drawing Product Marking The component will be marked with an "ECP203G-G" designator with an alphanumeric lot code on the top surface of the package. The obsolete tin-lead package is marked with an "ECP03G" designator followed by an alphanumeric lot code. Tape and reel specifications for this part are located on the website in the "Application Notes" section. ESD / MSL Information ESD Rating: Value: Test: Standard: Class 1B Passes 500 V to <1000 V Human Body Model (HBM) JEDEC Standard JESD22-A114 MSL Rating: Standard: Level 2 at +260 C convection reflow JEDEC Standard J-STD-020 Mounting Config. Notes Mounting Configuration / Land Pattern 1. 2. 3. 4. 5. 6. 7. 8 A heatsink underneath the area of the PCB for the mounted device is strictly required for proper thermal operation. Damage to the device can occur without the use of one. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135") diameter drill and have a final plated thru diameter of .25 mm (.010"). Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. Mounting screws can be added near the part to fasten the board to a heatsink. Ensure that the ground / thermal via region contacts the heatsink. Do not put solder mask on the backside of the PC board in the region where the board contacts the heatsink. RF trace width depends upon the PC board material and construction. Use 1 oz. Copper minimum. All dimensions are in millimeters (inches). Angles are in degrees. Specifications and information are subject to change without notice WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com, www.TriQuint.com Page 8 of 9 May 2009 ECP203 2 Watt, High Linearity InGaP HBT Amplifier ECP203D-G (16-pin 4x4mm Package) Mechanical Information This package is lead-free/green/RoHS-compliant. The plating material on the leads is annealed matte tin over copper. It is compatible with both lead-free (maximum 260 C reflow temperature) and lead (maximum 245 C reflow temperature) soldering processes. Outline Drawing E203G Product Marking The component will be marked with an "E203G" designator with an alphanumeric lot code on the top surface of the package. The obsolete tin-lead package is marked with an "E203" designator followed by an alphanumeric lot code. Tape and reel specifications for this part are located on the website in the "Application Notes" section. ESD / MSL Information ESD Rating: Value: Test: Standard: Land Pattern Class 1B Passes between 500 and 1000V Human Body Model (HBM) JEDEC Standard JESD22-A114 MSL Rating: Level 2 at +260 C convection reflow Standard: JEDEC Standard J-STD-020 Mounting Config. Notes 1. 2. 3. 4. 5. 6. 7. 8 A heatsink underneath the area of the PCB for the mounted device is strictly required for proper thermal operation. Damage to the device can occur without the use of one. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135") diameter drill and have a final plated thru diameter of .25 mm (.010"). Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. Mounting screws can be added near the part to fasten the board to a heatsink. Ensure that the ground / thermal via region contacts the heatsink. Do not put solder mask on the backside of the PC board in the region where the board contacts the heatsink. RF trace width depends upon the PC board material and construction. Use 1 oz. Copper minimum. All dimensions are in millimeters. Angles are in degrees. Specifications and information are subject to change without notice WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com, www.TriQuint.com Page 9 of 9 May 2009