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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
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December 2013
©2006 Fairchild Semiconductor Corporation
FQPF8N60CF Rev C1
www.fairchildsemi.com
1
FQPF8N60CF
N-Channel QFET® FRFET® MOSFET
600 V, 6.26 A, 1.5 Ω
Description Features
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Thermal Characteristics
This N-Channel enhancement mode power MOSFET is produced
using Fairchild Semiconductor’s proprietary planar stripe and
DMOS technology. This advanced MOSFET technology has
been especially tailored to reduce on-state resistance, and to
provide superior switching performance and high avalanche
energy strength. These devices are suitable for switched mode
power supplies, active power factor correction (PFC), and
electronic lamp ballasts.
•6.26 A, 600 V, RDS(on) = 1.5 Ω (Max.) @ VGS = 10 V, ID = 3.13 A
•Low Gate Charge (Typ. 28 nC)
•Low Crss (Typ. 12 pF)
• 100% Avalanche Tested
FQPF8N60CF — N-Channel QFET® FRFET® MOSFET
Symbol Parameter FQPF8N60CFT Unit
RθJC Thermal Resistance, Junction to Case, Max. 2.6 oC/W
RθJA Thermal Resistance, Junction to Ambient, Max. 62.5
TO-220F
GDS
G
S
D
Symbol Parameter FQPF8N60CFT Unit
VDSS Drain-Source Voltage 600 V
IDDrain Current 6.26* A- Continuous (TC = 25°C)
- Continuous (TC = 100°C) 3.96* A
IDM Drain Current - Pulsed (Note 1) 25* A
VGSS Gate-Source Voltage ± 30 V
EAS Single Pulsed Avalanche Energy (Note 2) 160 mJ
IAR Avalanche Current (Note 1) 6.26 A
EAR Repetitive Avalanche Energy (Note 1) 14.7 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
PDPower Dissipation (TC = 25°C) 48 W
- Derate above 25°C 0.38 W/°C
TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C
TL
Maximum Lead Temperature for Soldering,
1/8" from Case for 5 Seconds 300 °C
* Drain current limited by maximum junction temperature
www.fairchildsemi.com
2
FQPF8N60CF — N-Channel QFET® FRFET® MOSFET
©2006 Fairchild Semiconductor Corporation
FQPF8N60CF Rev C1
Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity
TO-220FTube N/A N/A 50 units
Package Marking and Ordering Information
Electrical Characteristics TC = 25°C unless otherwise noted.
FQPF8N60CFTFQPF8N60CFT
1. Repetitive rating : pulse-width limited by maximum junction temperature.
2. L = 7.3 mH, IAS = 6.26 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.
3.
ISD ≤ 6.26 A, di/dt ≤ 200 A/µs, VDD ≤ BVDSS, Starting TJ = 25°C.
4. Essentially independent of operating temperature.
NOTES:
Symbol Parameter Test Conditions Min.Typ.Max.Unit
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 600 -- -- V
∆BVDSS
/ ∆TJ
Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.7 -- V/°C
IDSS Zero Gate Voltage Drain Current VDS = 600 V, VGS = 0 V -- -- 10 µA
VDS = 480 V, TC = 125°C -- -- 100 µA
IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA
IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA2.0--4.0V
RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 3.13 A -- 1.25 1.5 Ω
gFS Forward Transconductance VDS = 40 V, ID = 3.13 A -- 8.7 -- S
Dynamic Characteristics
Ciss Input Capacitance VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 965 1255 pF
Coss Output Capacitance -- 105 135 pF
Crss Reverse Transfer Capacitance -- 12 16 pF
Switching Characteristics
td(on) Turn-On Delay Time VDD = 300 V, ID = 6.26A,
RG = 25 Ω
(Note 4)
-- 16.5 45 ns
trTurn-On Rise Time -- 60.5 130 ns
td(off) Turn-Off Delay Time -- 81 170 ns
tfTurn-Off Fall Time -- 64.5 140 ns
QgTotal Gate Charge VDS = 480 V, ID = 6.26A,
VGS = 10 V
(Note 4)
-- 28 36 nC
Qgs Gate-Source Charge -- 4.5 -- nC
Qgd Gate-Drain Charge -- 12 -- nC
Drain-Source Diode Characteristics and Maximum Ratings
ISMaximum Continuous Drain-Source Diode Forward Current -- -- 6.26 A
ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 25 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 6.26 A -- -- 1.4 V
trr Reverse Recovery Time VGS = 0 V, IS = 6.26 A,
dIF / dt = 100 A/µs
-- 82 -- ns
Qrr Reverse Recovery Charge -- 242 -- nC
www.fairchildsemi.com
3
FQPF8N60CF — N-Channel QFET® FRFET® MOSFET
©2006 Fairchild Semiconductor Corporation
FQPF8N60CF Rev C1
Typical Performance Characteristics
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperatue
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
10-1 0101
10-1
100
101
VGS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
Bottom : 5.0 V
※ Notes :
1. 250µ s Pulse Test
2. TC
= 25℃
ID, Drain Current [A]
10
VDS, Drain-Source Voltage [V]
22 810
10-1
100
101
150oC
25oC
-55oC
※ Notes :
1. VDS = 40V
2. 250µ s Pulse Test
ID, Drain Current [A]
4
VGS, Gate-Source Voltage [V]
0.2 0.4 0.6 0.8 1.0 1.2 1.4
10-1
100
101
150℃※ Notes :
1. VGS = 0V
2. 250µ s Pulse Test
25℃
IDR, Reverse Drain Current [A]
V
SD, Source-Drain voltage [V]
0 5 10 15 20
0.5
1.0
1.5
2.0
2.5
3.0
3.5
VGS = 20V
VGS = 10V
※ Note : TJ = 25℃
RDS(ON) [Ω],
Drain-Source On-Resistance
ID
, Drain Current [A]
0 5 10 15 20 25 30
0
2
4
6
8
10
12
VDS = 300V
VDS = 120V
VDS = 480V
* Note : ID = 6.26A
VGS, Gate-Source Voltage [V]
QG, Total Gate Charge [nC]
10-1 0101
0
200
400
600
800
1000
1200
1400
1600
1800
2000 C
iss = Cgs + Cgd (Cds = shorted)
C
os
rss
s
= Cgd
ds
C = C + Cgd
※ Notes ;
1. VGS = 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
Capacitance [pF]
10
V
DS, Drain-Source Voltage [V]
6
www.fairchildsemi.com
4
FQPF8N60CF — N-Channel QFET® FRFET® MOSFET
©2006 Fairchild Semiconductor Corporation
FQPF8N60CF Rev C1
Typical Performance Characteristics (Continued)
ZθJC(t), Thermal Response [oC/W]
Figure 7. Breakdown Volt age Variation Figure 8. On-Resistance Variation
vs. Temperature vs. Temperature
TJ, Junction Temperature [oC]
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature
VDS, Drain-SourceVoltage[V]
Figure 11. Transient Thermal Response Curve
-100 -50 0 50 100 150 200
0.8
0.9
1.0
1.1
1.2
* Notes :
1. VGS = 0 V
2. ID
= 250 킕
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
-100 -50 0 50 100 150 200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
* Notes :
1. VGS = 10 V
2. ID = 3.13 A
RDS(ON), (Normalized)
Drain-Source On-Resistance
TJ, Junction Temperature [oC]
100101102103
10-2
10-1
100
101
102
DC
100ms
10ms
1ms
100 µs
10 µs
Operation in This Area
is Limited by R DS(on)
* : Notes
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
ID, Drain Current [A]
25 50 75 100 125 150
0
2
4
6
8
ID, Drain Current [A]
TC, Case Temperature [oC]
10-5 10-4 10-3 10-2 10-1 100101
10-2
10-1
100
* Notes :
1. Z?JC
(t) = 2.6 ? /W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * Z?JC
(t)
single pulse
D=0.5
0.02
0.2
0.05
0.1
0.01
t1, Square Wave Pulse Duration [sec]
t1
PDM
t2
www.fairchildsemi.com
5
FQPF8N60CF — N-Channel QFET® FRFET® MOSFET
©2006 Fairchild Semiconductor Corporation
FQPF8N60CF Rev C1
Figure 12. Gate Charge Test Circuit & Waveform
Figure 13. Resistive Switching Test Circuit & Waveforms
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
VVGSGS
VVDSDS
1010%%
90%90%
ttd(d(onon)) ttrr
tt onon tt ofofff
ttd(d(ooffff)) ttff
VVDDDD
VVDSDS
RRLL
DUDUTT
RRGG
VVGSGS
ChaCharrgege
VVGSGS
10V10V
QQgg
QQgsgs QQgdgd
VVGSGS
DUDUTT
VVDSDS
300n300nFF
50K50KΩΩ
200n200nFF
12V12V
SamSamee TTyypepe
as as DUDUTT
===
EEEASASAS --------
2
1
2
1
2
1
2
1
-------- LLL
ASASAS
III
BVBVDSSDSS
222 ----------------------------------------
BVBVDSDSSS -V-V
DDDD
VVDDDD
VVDSDS
BVBVDSDSSS
t t pp
VVDDDD
IIASAS
VVDS DS (t)(t)
IID D (t)(t)
TiTimmee
DUTDUT
RRGG
LLL
III DDD
t t pp
VVGSGS
VVGSGS
IG = const.
www.fairchildsemi.com
6
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
VDS
+
_
Driver
RGSame Type
as DUT
VGS • dv/dt controlled by RG
•I
SD controlled by pulse period
VDD
L
ISD
10V
VGS
( Driver )
ISD
( DUT )
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
VSD
IFM , Body Diode Forward Current
Body Diode Reverse Current
IRM
Body Diode Recovery dv/dt
di/dt
D = Gate Pulse Width
Gate Pulse Period
--------------------------
DUT
VDS
+
_
Driver
RGSame Type
as DUT
VGS • dv/dt controlled by RG
•I
SD controlled by pulse period
VDD
LL
ISD
10V
VGS
( Driver )
ISD
( DUT )
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
VSD
IFM , Body Diode Forward Current
Body Diode Reverse Current
IRM
Body Diode Recovery dv/dt
di/dt
D = Gate Pulse Width
Gate Pulse Period
--------------------------
D = Gate Pulse Width
Gate Pulse Period
--------------------------
FQPF8N60CF — N-Channel QFET® FRFET® MOSFET
©2006 Fairchild Semiconductor Corporation
FQPF8N60CF Rev C1
www.fairchildsemi.com
7
FQPF8N60CF — N-Channel QFET® FRFET® MOSFET
©2006 Fairchild Semiconductor Corporation
FQPF8N60CF Rev C1
Mechanical Dimensions
Figure 16. TO220, Molded, 3-Lead, Full Pack, EIAJ SC91, Straight Lead
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Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
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Definition of Terms
AccuPower™
AX-CAP®*
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®
™
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Rev. I66
tm
®
FQPF8N60CF — N-Channel QFET® FRFET® MOSFET
Obsolete
©2006 Fairchild Semiconductor Corporation
FQPF8N60CF Rev C1
www.onsemi.com
1
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