MITSUBISHI TRANSISTOR MODULES QM50TB-2HB MEDIUM POWER SWITCHING USE INSULATED TYPE QM50TB-2HB * * * * * IC Collector current .......................... 50A VCEX Collector-emitter voltage ......... 1000V hFE DC current gain............................. 750 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION Inverters, Servo drives, DC motor controllers, NC equipment, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM 1020.5 6 14 6 14 6 17 Dimensions in mm 4-5.5 7-M4 P U V N W 30 16.5 12 BuN EuN BvN EvN BwN EwN 10 BvP EuP EvP EwP BvN BwN EvN EwN BuN EuN N N U V W 8.5 17 N 24.5 P 30 740.25 P 910.5 BwPEwP 43 BvP EvP 27 BuP EuP P BwP BuP 2 20 20 800.25 22 11 Tab#110, t=0.5 LABEL 7 30+1.5 -0.5 29.5 8.1 22 Note: All Transistor Units are 4-Stage Darlingtons. Feb.1999 http://store.iiic.cc/ MITSUBISHI TRANSISTOR MODULES QM50TB-2HB MEDIUM POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol (Tj=25C, unless otherwise noted) Ratings Unit VCEX (SUS) Collector-emitter voltage IC=1A, VEB=2V Conditions 1000 V VCEX Collector-emitter voltage VEB=2V 1000 V VCBO Collector-base voltage Emitter open 1000 V VEBO Emitter-base voltage Collector open 7 V IC Collector current DC 50 A -IC Collector reverse current DC (forward diode current) 50 A PC Collector dissipation TC=25C 400 W IB Base current DC 3 A -ICSM Surge collector reverse current (forward diode current) Peak value of one cycle of 60Hz (half wave) 500 A Tj Junction temperature -40~+150 C Tstg Storage temperature -40~+125 C Viso Isolation voltage Parameter Charged part to case, AC for 1 minute Main terminal screw M4 -- Mounting torque Mounting screw M5 -- Typical value Weight ELECTRICAL CHARACTERISTICS 2500 V 0.98~1.47 N*m 10~15 kg*cm 1.47~1.96 N*m 15~20 kg*cm 660 g (Tj=25C, unless otherwise noted) Limits Symbol Test conditions Parameter Min. Typ. Max. Unit ICEX Collector cutoff current VCE=1000V, VEB=2V -- -- 2.0 mA ICBO Collector cutoff current VCB=1000V, Emitter open -- -- 2.0 mA IEBO Emitter cutoff current VEB=7V -- -- 50 mA VCE (sat) Collector-emitter saturation voltage -- -- 4.0 V VBE (sat) Base-emitter saturation voltage -- -- 4.0 V -VCEO Collector-emitter reverse voltage -IC=50A (diode forward voltage) -- -- 1.8 V hFE DC current gain IC=50A, VCE=4.0V 750 -- -- -- -- -- 2.5 s Switching time VCC=600V, IC=50A, IB1=0.1mA, IB2=-1.0A -- -- 15 s -- -- 3.0 s Transistor part (per 1/6 module) -- -- 0.31 C/ W Diode part (per 1/6 module) -- -- 1.2 C/ W Conductive grease applied (per 1/6 module) -- -- 0.2 C/ W IC=50A, IB=67mA ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Feb.1999 http://store.iiic.cc/ MITSUBISHI TRANSISTOR MODULES QM50TB-2HB MEDIUM POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) Tj=25C DC CURRENT GAIN hFE 80 0mA 0 IB=4 A 00m IB=2 A 67m IB= 0mA IB=2 60 40 20 0 IB=10mA 0 1 2 3 4 COLLECTOR-EMITTER VOLTAGE 10 -1 7 5 4 3 2 3.2 3.6 4.0 BASE-EMITTER VOLTAGE 10 3 7 5 4 3 2 4.4 4.8 ton, ts, tf (s) 2 IC=50A 1 VBE(sat) 10 0 7 5 4 3 2 VCE(sat) 10-1 10 0 IB=67mA Tj=25C Tj=125C 2 3 4 5 7 10 1 2 3 4 5 7 10 2 SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) SWITCHING TIME COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 3 2 3 4 5 7 10 2 COLLECTOR CURRENT IC (A) 5 4 2 3 4 5 7 10 1 101 7 5 4 3 2 VBE (V) Tj=25C Tj=125C VCE=4V SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) IC=30A VCE=10V COLLECTOR CURRENT IC (A) VCE (sat), VBE (sat) (V) BASE CURRENT IB (A) VCE=4V Tj=25C 10 -2 2.8 Tj=25C Tj=125C VCE (V) COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) 10 0 7 5 4 3 2 10 4 7 5 4 3 2 10 2 10 0 5 SATURATION VOLTAGE COLLECTOR CURRENT IC (A) 100 0 10 -3 2 3 4 5 710 -2 2 3 4 5 710 -1 2 3 4 5 7 10 0 BASE CURRENT IB (A) 3 2 ts 10 1 7 5 VCC=600V 4 IB1=100mA 3 -IB2=1A Tj=25C 2 Tj=125C 10 0 7 5 4 3 tf ton 3 4 5 7 10 1 2 3 4 5 7 10 2 COLLECTOR CURRENT 2 3 IC (A) Feb.1999 http://store.iiic.cc/ MITSUBISHI TRANSISTOR MODULES QM50TB-2HB MEDIUM POWER SWITCHING USE INSULATED TYPE SWITCHING TIME VS. BASE CURRENT (TYPICAL) REVERSE BIAS SAFE OPERATING AREA 100 3 10 1 7 5 4 3 2 ts COLLECTOR CURRENT IC (A) SWITCHING TIME ts, tf (s) 2 tf VCC=600V IC=50A 7 IB1=100mA Tj=25C 5 4 Tj=125C 3 10-1 2 3 4 5 7 10 0 10 0 60 40 20 0 2 3 4 5 7 10 1 BASE REVERSE CURRENT -IB2 (A) DC 1mS 10 1 7 5 3 2 600 800 1000 VCE (V) SECOND BREAKDOWN AREA 90 80 70 60 50 COLLECTOR DISSIPATION 40 30 20 10 10 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 0 0 VCE (V) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 45 710 1 2 3 4 5 7 0.5 0.4 0.3 0.2 0.1 0 10 -3 2 3 4 5 710 -2 2 3 4 5 710 -1 2 3 4 5 7 10 0 20 40 60 80 100 120 140 160 CASE TEMPERATURE COLLECTOR REVERSE CURRENT -IC (A) COLLECTOR-EMITTER VOLTAGE Zth (j-c) (C/ W) 400 100 DERATING FACTOR (%) COLLECTOR CURRENT IC (A) 10 2 7 5 3 2 200 DERATING FACTOR OF F. B. S. O. A. TC=25C NON-REPETITIVE 50S Tj=125C 0 COLLECTOR-EMITTER VOLTAGE FORWARD BIAS SAFE OPERATING AREA 10 3 7 5 3 2 IB2=-1A 80 TIME (s) 10 2 7 5 4 3 2 REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL) 10 1 7 5 4 3 2 10 0 TC (C) 0 0.4 0.8 1.2 Tj=25C Tj=125C 1.6 2.0 COLLECTOR-EMITTER REVERSE VOLTAGE -VCEO (V) Feb.1999 http://store.iiic.cc/ MITSUBISHI TRANSISTOR MODULES QM50TB-2HB MEDIUM POWER SWITCHING USE INSULATED TYPE REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 400 300 200 100 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 CONDUCTION TIME (CYCLES AT 60Hz) 10 2 7 5 4 3 2 10 1 Irr 10 1 7 Qrr 5 4 trr 3 VCC=600V 2 IB1=100mA -IB2=1A 0 10 10 0 2 3 4 5 7 10 1 10 0 trr (s) 500 Irr (A), Qrr (c) SURGE COLLECTOR REVERSE CURRENT -ICSM (A) RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) Tj=25C Tj=125C 10 -1 2 3 4 5 7 10 2 FORWARD CURRENT IF (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE) 10 0 2 3 4 5 710 1 2 3 4 5 2.0 1.8 Zth (j-c) (C/ W) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 10 -3 2 3 4 5 710 -2 2 3 4 5 710 -1 2 3 4 5 7 10 0 TIME (s) Feb.1999 http://store.iiic.cc/