© 2011 IXYS CORPORATION, All Rights Reserved DS99920B(03/11)
VDSS = 1000V
ID25 = 12A
RDS(on) ≤≤
≤≤
≤ 1.05ΩΩ
ΩΩ
Ω
trr ≤≤
≤≤
≤ 300ns
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 1000 V
VDGR TJ= 25°C to 150°C, RGS = 1MΩ1000 V
VGSS Continuous ± 30 V
VGSM Transient ± 40 V
ID25 TC= 25°C12A
IDM TC= 25°C, Pulse Width Limited by TJM 24 A
IAR TC= 25°C6A
EAS TC= 25°C 750 mJ
dv/dt IS≤ IDM, VDD ≤ VDSS,T
J ≤ 150°C 15 V/ns
PDTC= 25°C 463 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TLMaximum Lead Temperature for Soldering 300 °C
TSOLD Plastic Body for 10s 260 °C
MdMounting Torque (TO-247) 1.13/10 Nm/lb.in.
FCMounting Force (PLUS220) 11..65/2.5..14.6 N/lb.
Weight TO-247 6 g
PLUS220 types 4 g
IXFH12N100P
IXFV12N100P
IXFV12N100PS
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 1mA 1000 V
VGS(th) VDS = VGS, ID = 1mA 3.5 6.5 V
IGSS VGS = ± 30V, VDS = 0V ± 100 nA
IDSS VDS = VDSS, VGS = 0V 20 μA
TJ = 125°C 1.0 mA
RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 1.05 Ω
PolarTM HiPerFETTM
Power MOSFETs
Features
zLow RDS(on) and QG
zAvalanche Rated
zLow Package Inductance
zFast Intrinsic Rectifier
Advantages
zHigh Power Density
zEasy to Mount
zSpace Savings
Applications
zSwitch-Mode and Resonant-Mode
Power Supplies
zDC-DC Converters
zLaser Drivers
zAC and DC Motor Drives
zRobotics and Servo Controls
PLUS220 (IXFV)
GDSD (Tab)
PLUS220SMD (IXFV_S)
G
S
G = Gate D = Drain
S = Source Tab = Drain
TO-247 (IXFH)
D (Tab)
G
S
D
D (Tab)
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFH12N100P IXFV12N100P
IXFV12N100PS
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
gfs VDS = 20V, ID = 0.5 • ID25, Note 1 4.8 8.8 S
RGi Gate Input Resistance 1.9 Ω
Ciss 4080 pF
Coss VGS = 0V, VDS = 25V, f = 1MHz 246 pF
Crss 40 pF
td(on) 30 ns
tr 25 ns
td(off) 60 ns
tf 36 ns
Qg(on) 80 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 24 nC
Qgd 35 nC
RthJC 0.27 °C/W
RthCS (TO-247&PLUS220) 0.25 °C/W
Source-Drain Diode Characteristic Values
TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
ISVGS = 0V 12 A
ISM Repetitive, Pulse Width Limited by TJM 48 A
VSD IF = IS, VGS = 0V, Note 1 1.5 V
trr 300 ns
QRM 0.8 μC
IRM 7.9 A
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
IF = 6A, -di/dt = 100A/μs
VR = 100V, VGS = 0V
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 2Ω (External)
PLUS220 Outline
PLUS220SMD Outline
e
∅ P
TO-247 Outline
1 2 3
Terminals: 1 - Gate 2 - Drain
3 - Source
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A12.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
© 2011 IXYS CORPORATION, All Rights Reserved
IXFH12N100P IXFV12N100P
IXFV12N100PS
Fi g . 1. Ou tp u t C h ar acteri sti cs @ T
J
= 25ºC
0
2
4
6
8
10
12
0123456789101112
V
DS
- V olts
I
D
- Amperes
V
GS
= 10V
8V
5V
7V
6V
Fi g . 2. Extend ed Ou tp u t C har acter i sti cs @ T
J
= 25ºC
0
4
8
12
16
20
24
0 5 10 15 20 25 30
V
DS
- V olts
I
D
- Amperes
V
GS
= 10V
8V
7V
6V
5V
Fi g . 3. Ou tp u t C h ar acteri sti cs @ T
J
= 125ºC
0
2
4
6
8
10
12
0 5 10 15 20 25 30
V
DS
- Vo lts
I
D
- Amperes
V
GS
= 10V
7V
6V
5V
Fig. 4. R
DS(on)
Normalized to I
D
= 6A Value vs.
Junction T em perature
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= 10V
I
D
= 12A
I
D
= 6A
Fig. 5. R
DS(on)
Norm alized to I
D
= 6A Value vs.
Drain Current
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
0 2 4 6 8 1012141618202224
I
D
- Ampere s
R
DS(on)
- Normalized
V
GS
= 10V T
J
= 125ºC
T
J
= 25ºC
Fig. 6. Maxim um Drain Current vs.
Case Temper atu r e
0
2
4
6
8
10
12
14
-50 -25 0 25 50 75 100 125 150
T
C
- Deg rees Cen tigrade
I
D
- Ampere s
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFH12N100P IXFV12N100P
IXFV12N100PS
IXYS REF: F_12N100P(75-744)4-01-08-A
Fig. 7. Input Admittance
0
2
4
6
8
10
12
14
16
3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5
V
GS
- Vo lts
I
D
- Amperes
T
J
= 125ºC
25ºC
- 40ºC
Fig. 8. Transconductance
0
2
4
6
8
10
12
14
16
18
0 2 4 6 8 10 12 14 16 18
I
D
- Amperes
g
f s - Siemens
T
J
= - 40ºC
25ºC
125ºC
Fig. 9. Forward Voltage Drop of Intrinsic Diode
0
5
10
15
20
25
30
35
40
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
V
SD
- Volt s
I
S
- Amperes
T
J
= 125ºC
T
J
= 25ºC
Fig. 10. Gate Charge
0
2
4
6
8
10
12
14
16
0 102030405060708090100110
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 500V
I
D
= 6A
I
G
= 10mA
Fig. 11. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
DS
- V olts
Capacitance - PicoFara ds
f
= 1 MHz
Ciss
Crss
Coss
Fig . 12. Maximu m Tr an s i ent Th ermal I mped an c e
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
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evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
