J110_D26Z - Fairchild Semiconductor

J108/J109/J110/MMBFJ108

Absolute Maximum Ratings * TA=25°C unless otherwise noted

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Electrical Characteristics TA=25°C unless otherwise noted

* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%

Symbol Parameter Value Units

VDG Drain-Gate Voltage 25 V

VGS Gate-So urce Voltage -25 V

IGF Forward Gate Current 10 mA

TJ, Tstg Operating and Storage Junction Temperature Range -55 ~ +150 °C

Symbol Parameter Test Co ndition Min. Max. Units

Off Characteristics

V(BR)GSS Gate-Source Breakdwon Voltage IG = -10µA, VDS = 0 -25 V

IGSS Gate Reverse Current VGS = -15V, VDS = 0

VGS = -15V, VDS = 0, TA = 100°C-3.0

-200 nA

nA

VGS(off) Gate -Sou r ce C u t o ff Voltage VDS = 15V, ID = 10nA 108

109

110

-3.0

-2.0

-0.5

-10

-6.0

-4.0

V

On Characteristics

IDSS Zero-Gate Voltage Drain Current * VDS = 15V, IGS = 0 108

109

110

80

40

10

mA

rDS(on) Drain-Source On Resistance VDS ≤ 0.1V, VGS = 0 108

109

110

8.0

12

18

Ω

Small Signal Characteristics

Cdg(on)

Csg(off) Drain Ga te & So u rce Gate On

Capacitance VDS = 0, VGS = 0, f = 1.0MHz 85 pF

Cdg(on) Drain-Gate Off Capacitance VDS = 0, VGS = -10, f = 1.0MHz 15 pF

Csg(off) Source-Gate Off Capacitance VDS = 0, VGS = -10, f = 1.0MHz 15 pF

J108/J109/J110/MMBFJ108

N-Channel Switch

• This device is designed for digital switching

applications where very low on resistance is

mandatory.

• Sourced from Process 58.

1. Drain 2. Source 3. Gate

1

2

3

TO-92

1

1. Drain 2. Source 3. Gate

SuperSOT-3

Marking: I8

J108/J109/J110/MMBFJ108

Thermal Charac teris tics TA=25°C unless otherwise noted

* Device mounted on FR-4 PCB 1.6” × 1.6” × 0.06"

Symbol Parameter Max. Units

J108 - 110 *MMBFJ108

PDTotal Device Dissipation

Derate above 25°C625

5.0 350

2.8 mW

mW/°C

RθJC Thermal Resistance, Junction to Case 125 °C/W

RθJA Thermal Resistance, Junction to Ambient 357 556 °C/W

J108/J109/J110/MMBFJ108

Typical Characteristics

Figure 1 . C om mon Drain-Source Figure 2. Parameter Inte r a c tions

Figure 3 . C om mon Drain-Source Figure 4. C om mon Drain-Source

Figure 5. Normalized Drain Resistance vs

Bias Voltage Figure 6. Noise Voltage vs Frequency

Common Drain-Source

0 0.4 0.8 1.2 1.6 2

0

20

40

60

80

100

V - DRAIN-SOURCE VOLTAGE (V)

I - DRAIN CURRENT (mA)

DS

D

T = 25캜

캜캜

캜

TYP V = - 5.0 V

GS(off)

A

- 4.0 V

- 5.0 V

- 3.0 V

- 2.0 V

- 1.0 V

V = 0 V

GS

°

°°

°C

Parameter Interactions

0.1 0.5 1 5 10

5

10

50

100

10

50

100

500

1,000

V - GATE CUTOFF VOLTAGE (V)

r - DRAIN "ON" RE SISTANCE

GS (OFF)

DS

I @ V = 5.0V, V = 0 PULSED

r @ V = 100mV, V = 0

V @ V = 5.0V, I = 3.0 nA

GS(off)

DSS

rDS

IDSS

(Ω

ΩΩ

Ω)

DS DS

D

GS

DSS

I - DRAIN CURRENT (mA)

DS

___ __

Common Drain-Source

-20-16-12-8-40

10

100

V - GATE-SOURCE VOLTAGE (V)

C (C ) - CAPACITANCE (pF)

GS

ts

C (V = 5.0V)

iss

f = 0.1 - 1.0 MHz

DS

C (V = 0 )

rss DS

rs

Common Drain-Source

012345

0

10

20

30

40

50

V - DRAIN-SOURCE VOL TAGE (V)

I - DRAIN CURRENT (mA)

DS

D

- 0.4 V - 0.5 V

- 0.3 V

- 0.2 V

- 0.1 V

V = 0 V

GS

T = 25캜

캜캜

캜

TYP V = - 0.7 V

GS(off)

A°

°°

°C

Normalized Drain Resistance

vs Bias Voltage

0 0.2 0.4 0.6 0.8 1

1

2

5

10

20

50

100

V /V - NORMALIZED GATE-SOURCE VOLTAGE (V)

r - NORMALIZED RESISTANCE

GS

DS

r =

DS

V @ 5.0V, 10 µ

µµ

µA

GS(off)

r DS

________

V

GS(off)

V

GS

1 -

GS(off)

Noise Volt age vs Frequency

0.01 0.03 0.1 0.5 1 2 10 100

1

5

10

50

100

f - FREQUENCY (kH z)

e - NOISE VOLTAGE (nV / Hz)

n

V = 10V

BW = 6.0 Hz @ f = 10 Hz, 100 Hz

= 0.21 @ f ≥

≥≥

≥ 1.0 kHz

DG

I = 10 mA

D

I = 1.0 mA

D

√

√√

√

J108/J109/J110/MMBFJ108

Typical Characteristics (Continued)

Figur e 7 . Sw itch ing Tur n - O n Tim e vs

Gate-Source Cutoff Voltage Figur e 8. Switchi ng Turn-On Time vs Drain Current

Figure 9. On Resistance vs Drain Current Figure 10. Output Conductance vs Drain Current

Figure 11. Transconductance vs Drain Current Figure 12. Power Dissipation vs Ambient Temperature

ON

GS(off)

Switching Turn-On Time vs

Gate-Source Cuto ff Voltage

-10-8-6-4-20

0

2

4

6

8

10

V - GATE-SOURC E C UTOFF VOLTAGE (V)

t - TURN-ON TIME (ns)

T = 25캜

캜캜

캜

V = 1.5V

V = - 12V

GS(off)

A

DD

I = 30 mA

D

I = 10 mA

D

°

°°

°C

GS(off)

ON

Switching Turn-On Time

vs Dr ain Cur r ent

0 5 10 15 20 25

0

10

20

30

40

50

I - DRAIN CURREN T (mA)

t - TURN-OFF TIME (ns)

D

OFF

V = - 8.5V

V = - 5.5V

V = - 3.5V

GS(off)

T = 25캜

캜캜

캜

V = 1.5V

V = - 12V

GS(off)

A

DD

°

°°

°C

On Resistance vs Drain Current

1 10 100

1

5

10

50

100

I - DRAIN CURRENT (mA)

r - DRAIN "ON" RESISTA NCE

D

DS

V = - 3.0V

GS(off)

25캜

캜캜

캜

(Ω

ΩΩ

Ω)

125캜

캜캜

캜

25캜

캜캜

캜

125캜

캜캜

캜

V = - 5.0V

GS(off)

V = 0

GS

- 55캜

캜캜

캜

°

°°

°C

°

°°

°C

°

°°

°C

°

°°

°C

°

°°

°C

Output Conductance

vs Drain Current

0.1 1 10

1

10

100

I - DRAIN CURRENT (mA)

g - OUTPUT CONDUCTANCE ( mhos)

D

os

VGS(off)

T = 25캜

캜캜

캜

f = 1.0 kHz

V = 5.0V

DG

µ

µµ

µ

A

10V

15V 20V

5.0V

10V

15V

20V

- 4.0V 10V 15V

20V

- 2.0V

- 1.0V

°

°°

°C

Transconductance

vs Drain Current

0.1 1 10

1

10

100

I - DRAIN CURRENT (mA)

g - TRANSCONDUCTANCE (mmhos)

D

fs

V = - 1.0V

V = - 3.0V

V = - 5.0V

GS(off)

T = 25캜

캜캜

캜

V = 10V

f = 1.0 kHz

A

DG

T = - 55캜

캜캜

캜

T = 25캜

캜캜

캜

T = 125캜

캜캜

캜

A

°

°°

°C

°

°°

°C

°

°°

°C

°

°°

°C

0 255075100125150

0

100

200

300

400

500

600

700

SuperSOT-3 TO-92

PD - POWER DISSIPATION(mW)

TEM PERATUR E (oC)

Package Dimensions

J108/J109/J110/MMBFJ108

Dimensions in Millimeters

0.46 ±0.10

1.27TYP

(R2.29)

3.86MAX

[1.27 ±0.20]1.27TYP

[1.27 ±0.20]

3.60 ±0.20

14.47 ±0.40

1.02 ±0.10

(0.25) 4.58 ±0.20

4.58 +0.25

–0.15

0.38 +0.10

–0.05

0.38 +0.10

–0.05

TO-92

J108/J109/J110/MMBFJ108

Package Dimensions (Continued)

Dimensions in Millimeters

SuperSOT-3

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not

intended to be an exhaustive list of all such trademarks.

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY

PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY

LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;

NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR

CORPORATION.

As used herein:

1. Life support devices or systems are devic es or syst em s

which, (a) ar e intended for surgical implant into the body,

or (b) support or sustain life, or (c) whose failure to perform

when properly used in accordance with instructions for use

provided in the labeling, can be reasonably expected to

result in significant injury to the user.

2. A critical component is any component of a life support

device or system whose failure to perform can be

reasonably expected to cause the failure of the life support

device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In

Design This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

Preliminary First Production T his datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconduct or reserv es the right to make

changes at any time without notice in order to improve

design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

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