EC4407KF Ordering number : ENN8397 N-Channel Silicon MOSFET EC4407KF General-Purpose Switching Device Applications Features * * * Low ON-resistance. 1.8V drive. mounting height : 0.4mm. Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 20 Gate-to-Source Voltage VGSS 10 V ID 1.3 A Drain Current (DC) Drain Current (Pulse) IDP PD Allowable Power Dissipation V PW10s, duty cycle1% 4.8 A Mounted on a glass epoxy board 0.4 W Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +150 C Electrical Characteristics at Ta=25C Parameter Symbol Drain-to-Source Breakdown Voltage Ratings min typ max Unit ID=1mA, VGS=0V VDS=20V, VGS=0V VGS=8V, VDS=0V 20 IDSS IGSS VDS=10V, ID=1mA VDS=10V, ID=0.6A 0.4 Forward Transfer Admittance VGS(off) yfs RDS(on)1 RDS(on)2 224 m 240 333 m 335 475 m Input Capacitance RDS(on)3 Ciss ID=0.6A, VGS=4V ID=0.3A, VGS=2.5V ID=0.1A, VGS=1.8V 170 Static Drain-to-Source On-State Resistance VDS=10V, f=1MHz VDS=10V, f=1MHz 100 pF 22 pF Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage V(BR)DSS Conditions Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-ON Delay Time td(on) tr Rise Time Turn-OFF Delay Time Fall Time td(off) tf 0.96 V 10 A 10 A 1.3 1.6 V S VDS=10V, f=1MHz See specified Test Circuit. 15 pF 5.5 ns See specified Test Circuit. 9 ns See specified Test Circuit. 19 ns See specified Test Circuit. 7.5 ns Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 71505PE MS IM TB-00001523 No.8397-1/4 EC4407KF Continued from preceding page. Parameter Symbol Ratings Conditions min typ max Unit Total Gate Charge Qg VDS=10V, VGS=10V, ID=1.3A 4.5 nC Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=1.3A 0.4 nC Gate-to-Drain "Miller" Charge Qgd VDS=10V, VGS=10V, ID=1.3A 0.4 Diode Forward Voltage VSD IS=1.3A, VGS=0V 0.89 nC 1.2 V Package Dimensions unit : mm 7043-001 Top View 0.8 3 1 2 1.2 4 0.4 Polarity Discriminating Mark 0.5 0.3 0.2 2 4 3 1 : Gate 2 : Source 3 : Drain 4 : Drain 0.75 1 SANYO : ECSP1208-4-F Bottom View Type No. Indication(Top view) Electrical Connection(Top view) Polarity mark (Top) Gate KA Drain Source *Electrodes : on the bottom Switching Time Test Circuit VDD=10V 4V 0V VIN ID=0.6A RL=16.7 VIN VOUT D PW=10s D.C.1% G P.G 50 S EC4407KF No.8397-2/4 EC4407KF 4 .0 V 0.7 Ta= --25 C 75 C V 1.8 1.6 0.6 0.5 0.4 0.3 1.4 1.2 1.0 0.8 Ta= 75 25 C C --25 C 0.9 0.8 VDS=10V 1.8 Drain Current, ID -- A 8.0V Drain Current, ID -- A 1.0 .5V =1 V GS 3.0V 1.1 2.5 V 6.0V 5.0V 1.2 ID -- VGS 2.0 0.6 0.4 0.2 0.2 0.1 25 C ID -- VDS 1.3 0 0 0.1 0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Drain-to-Source Voltage, VDS -- V 0 1.0 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Gate-to-Source Voltage, VGS -- V RDS(on) -- VGS 700 0.2 IT09818 2.0 IT02984 RDS(on) -- Ta 700 Static Drain-to-Source On-State Resistance, RDS(on) -- m 600 500 300mA 600mA 400 ID=100mA 200 100 1 2 3 4 5 6 7 25 1.0 7 5 5 = Ta 3 --2 C C C 5 7 0.1 7 5 3 --40 --20 0 20 40 60 80 100 120 140 160 IT09820 IS -- VSD VGS=0 2 1.0 7 5 3 2 0.1 7 5 3 2 2 0.01 0.001 2 3 5 70.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Drain Current, ID -- A 0.01 0.2 5 7 10 IT02987 SW Time -- ID 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 IT02988 Ciss, Coss, Crss -- VDS 1000 f=1MHz Ciss, Coss, Crss -- pF 5 td(off) 10 tf 7 td(on) 5 3 2 Ciss 100 7 5 3 3 2 2 1.0 0.1 0.4 7 3 2 0.3 Diode Forward Voltage, VSD -- V VDD=10V VGS=4V tr Switching Time, SW Time -- ns 100 10 7 5 2 5 200 3 2 7 2.5V V S= 0mA, G 0 3 = ID =4.0V mA, V GS I D=600 300 Ambient Temperature, Ta -- C VDS=10V 3 100 00mA I D=1 IT09819 yfs -- ID 10 7 5 8 Source Current, IS -- A Forward Transfer Admittance, yfs -- S Gate-to-Source Voltage, VGS -- V =1.8V , V GS 400 0 --60 0 0 500 5C 25 C --25 C 300 600 Ta= 7 Static Drain-to-Source On-State Resistance, RDS(on) -- m Ta=25C Coss Crss 10 2 3 5 7 1.0 Drain Current, ID -- A 2 3 5 IT02989 0 2 4 6 8 10 12 14 16 Drain-to-Source Voltage, VDS -- V 18 20 IT02990 No.8397-3/4 EC4407KF VGS -- Qg 10 9 3 2 Drain Current, ID -- A 8 7 6 5 4 3 2 0 0 1 2 3 4 Total Gate Charge, Qg -- nC IT09221 ID=1.3A 10 D C 3 m 10 s op er 2 0.1 7 5 s 0m at io n Operation in this area is limited by RDS(on). Ta=25C Single pulse Mounted on a glass epoxy board 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 Drain-to-Source Voltage, VDS -- V 2 3 IT09222 PD -- Ta 0.45 Allowable Power Dissipation, PD -- W 5 10s 1.0 7 5 3 2 1 ASO IDP=4.8A s 1m Gate-to-Source Voltage, VGS -- V 10 7 5 VDS=10V ID=1.3A 0.40 0.35 M ou nt 0.30 0.25 ed on ag las se 0.20 po xy 0.15 bo ar d 0.10 0.05 0 0 20 40 60 80 100 120 Amibient Tamperature, Ta -- C 140 160 IT09223 Note on usage : Since the EC4407KF is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of July, 2005. Specifications and information herein are subject to change without notice. PS No.8397-4/4