Copyright @ Dawin Electronics Corp. A ll r ight reserved
DM2G100SH6N
Sep. 2008
1/7
High Power Lugge d Type IGB T Module
Description
DA WIN ’ S I G B T module devices are opt imized t o reduce losses
and swit ching noise in high f requency power conditioning electr ica l sy stems.
These I G BT modules are ideally suited for power inve rters, motors drives
and ot her applications w here swit ching losses are s ignificant port ion of t he
t ot a l losses.
Features
☞High Speed Switching
☞BVCES = 600V
☞Low Conduct ion Loss : VCE(sat) = 2.1 V (ty p.)
☞Fast & Soft Ant i-Paral lel FWD
☞Short circu it rated : Min.10uS at T C=100℃
☞Reduced EM I and R FI
☞I solation Ty pe Package
Applications
Mot or Drives, High Power Invert ers, Welding Machine,
I nduct ion Heat ing, UP S , C VC F, Robot ics , Servo C ont rols,
High Speed SMPS
Absolu te M axi mu m Ratin g s@ Tj=25℃(Per Leg)
Symbol Parameter Ratings UnitConditions
Equiv alent Circu it
E qu ival en t Ci r cuit and Packag e
Package : 7DM-1 Series
Please see the package out line inf ormat ion
VCES
VGES
IC
ICM (1)
IF
IFM
TSC
PD
Tj
Tstg
Viso
C o llec tor-E mitter Vo lta g e
Gat e-Emitter Voltage
Collect or Current
Pulsed Collector Current
Diode Cont inuous Forward Current
Diode Maximum Forward Current
Short C ircuit Wit hst and T ime
Maximum Power Dissipation
Operat ing Junction Temperature
St orage Temperature Range
I solation Volt age
Mount ing screw Torque :M6
Power terminals screw Torque :M5
600
±20
125
100
150
100
200
10
450
-40 ~ 150
-40 ~ 125
2500
4.0
2.0
V
V
A
A
A
A
A
uS
W
℃
℃
V
N.m
N.m
-
-
TC= 25℃
TC= 75℃
-
TC= 100℃
-
TC= 100℃
TC= 25℃
-
-
AC 1 minute
-
-
6
7
5
4
①②③
Copyright @ Dawin Electronics Corp. A ll r ight reserved
DM2G100SH6N
Sep. 2008
2/7
E l ectr ical Char acteristi cs o f IGBT @ TC=25℃(unless otherwise specified)
Symbol Parameter Values Unit
Conditions Min. Typ. Max.
C - E B reakdown V oltage
Temperat ure Coeff. of
Breakdown Voltage
G - E t hreshold volt age
Colle ctor cutoff Current
G - E leakage Current
Colle ctor to Emitter
sat uration v oltage
I nput capacitance
Output capacitance
Reverse transf er capacit ance
Turn on delay time
Tu rn o n ris e time
Turn off delay tim e
Turn off fall time
Turn on Swit ching Loss
Turn off Switching Loss
Tot al Switching Loss
Short C ircuit Wit hst and T ime
Tot al Gat e Charge
Gat e-Emitter Charge
Gate-Collect or Charge
BVCES
ΔBVCES/
ΔTJ
VGE(th)
ICES
IGES
VCE(sat)
Cies
Coes
Cres
td(on)
tr
td(off )
tf
Eon
Eoff
Ets
Tsc
Qg
Qge
Qgc
600
-
5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
10
-
-
-
-
0.6
-
-
-
2.1
2.4
10000
950
230
25
50
80
110
1.7
4.5
6.2
-
400
76
175
-
-
8.5
250
±100
2.8
-
-
-
-
-
-
-
200
-
-
-
-
510
125
260
V
V/℃
V
uA
nA
V
V
pF
pF
pF
nS
nS
nS
nS
mJ
mJ
mJ
uS
nC
nC
nC
VGE = 0V , IC=250uA
VGE = 0V , IC= 1.0m A
IC= 500uA , V CE = V GE
VCE = 600V , VGE = 0V
VGE =±20V
IC= 100A, V GE= 15V @TC= 25 ℃
IC= 100A, V GE= 15V @TC= 100℃
VGE = 0 V , f = 1 ㎒
VCE = 30V
VCC = 300V , IC= 100A
VGE = 15V
RG= 2.4 Ω
I nduct iv e Load
Vcc = 300V , VGE = 15V, RG= 2. 4Ω
@TC= 100℃
Vcc = 300V
VGE = 15V
IC= 100A
Copyright @ Dawin Electronics Corp. A ll r ight reserved
DM2G100SH6N
Sep. 2008
3/7
E l ectr ical Char acteristi cs o f F RD @ TC=25℃(unless ot herwise specif ied )
Symbol Parameter Values UnitConditions Min. Typ. Max.
IF=100A
IF= 100A, VR=300V
di/ dt= -200A/ uS
Tc =25℃
Tc = 100℃
Tc =25℃
Tc = 100℃
Tc =25℃
Tc = 100℃
Tc =25℃
Tc = 100℃
Diode Forw ard Voltage
Diode Reverse
Recov ery Time
Diode Peak Reverse
Rec over y Cur r e nt
Diode Reverse
Recovery Charge
VFM
trr
Irr
Qrr
-
-
-
-
-
-
-
-
1.6
1.5
120
130
7.5
9
450
585
2.0
-
-
-
-
-
-
-
V
nS
A
nC
Th ermal Character i stics and Wei g h t
Symbol Parameter Values UnitConditions Min. Typ. Max.
RθJC
RθJC
RθCS
Weight
Junct ion-t o-Case(IG BT Part , Pe r 1/2 M odule)
Junct ion-t o-Case(DI O DE Part , Per 1/2 Module)
Case-t o-Sink ( Conduct iv e grease applied)
Weight of Module
℃/W
℃/W
℃/W
g
-
-
-
-
0.26
0.6
-
200
-
-
0.05
-
Copyright @ Dawin Electronics Corp. A ll r ight reserved
DM2G100SH6N
Sep. 2008
4/7
P erfor m an ce Cur ves
0
50
100
150
200
250
300
0123456
TC=125℃TC=25℃
Collect or – Emitt er Voltage, VCE [V]
Coll e c to r Curr ent, I C[A]
Collect or – Emitt er Voltage, VCE [V]
Coll e c to r Curr ent, I C[A]
Gate – Emitter Voltage, VGE [V]
Collect or – Emitt er Voltage, VCE [V]
Collect or – Emitt er Voltage, VCE [V]
Gate – Emitter Voltage, VGE [V]
Fig 1. Typical Output characteristics
Fig 5. Typical Saturation Voltage vs. VGE
Fig 3. Typical Output characteristics
Fig 6. Typical Saturation Voltage vs. VGE
Load Cu r r ent [A]
Frequen cy [KHz]
Fig 4. Load Current vs. Frequency
0
4
8
12
16
20
0 4 8 121620
C ommon E mitte r
TC=25℃
200A
100A
IC=50A
0
20
40
60
80
100
120
0.1 1 10 100 1000
Du ty cycle = 5 0%
TC=125℃
Power Dissipation = 130W
Fig 2. Typical Output characteristics
0
30
60
90
120
150
180
210
240
012345678
20V
15V
12V
C ommon E mitte r
TC=25℃
VGE = 10V
Collect or – Emitt er Voltage, VCE [V]
Coll e c to r Curr ent, I C[A]
0
30
60
90
120
150
180
210
240
012345678
20V
15V
12V
C ommon E mitte r
TC=125℃
VGE = 10V
0
4
8
12
16
20
04 8121620
C ommon E mitte r
TC=125℃
200A
100A
IC=50A
Copyright @ Dawin Electronics Corp. A ll r ight reserved
DM2G100SH6N
Sep. 2008
5/7
Fig 8. Gate Charge Characteristics
Fig 9. Transient Thermal Impedance
Single N on-re petitive
Pulse Tj≤125℃
VGE = 15V
RG= 18Ω
Coll e c to r Curr ent, I C[A]
Collect or-Emit t er Voltage, VCE [V]
Fig 10. RBSOA Characteristic
Collect or-Emit t er Voltage, VCE [V]
Fig 11. SCSOA Characteristic
Coll e c to r Curr ent, I C[A]
Collect or – Emitt er Voltage, VCE [V]
Capaci tance [pF]
Fig 7. Capacitance characteristics
C ommon E mitte r
VGE=0V, f =1MHZ
TC=25℃
Cies
Coes
Cres
0
2000
4000
6000
8000
10000
12000
14000
16000
0.1 1 10 100
Cies
Coes
Cres
C ommon E mitte r
VGE=0V, f =1MHZ
TC=25℃
Gate-Emitter Voltage ,VGE [V]
Gate Charge, Qg[nc]
TBD
0
3
6
9
12
15
0 100 2 00 3 00 4 00 5 00
C ommon E mitte r
RL= 2.4Ω
TC= 25 ℃
VCC = 100V
200V
300V
0.001
0.01
0.1
1
1.E-05 1.E-04 1.E-03 1 .E-02 1 .E-01 1.E+00 1.E+01
IGBT :
DIODE :
TC=25℃
Rectangular Pulse Duration [sec]
Therma l Response Zt hjc [ /W ]
℃
1
10
100
1 000
0 100 200 3 00 400 500 600 70 0
Single N on-re petitive
Pulse Tj≤125℃
VGE = 15V
RG= 2.4Ω
0
200
400
600
800
1 000
1 200
0 100 200 300 40 0 500 600 700
Case T emper ature, T c [ ℃]
Coll e c to r Curr ent ,I c [ A ]
Fig 12. rated Current vs. Case Temperature
0
30
60
90
120
150
0 20 40 60 80 100 120 140 160
TJ≤150℃
VGE ≥15V
Copyright @ Dawin Electronics Corp. A ll r ight reserved
DM2G100SH6N
Sep. 2008
6/7
Fig 13. Power Dissipation vs. Case Temperature
Power Dis s ip a tion , PD[ W ]
Case T emper ature, T c [ ℃]
Fig 15. Forward characteristics
Forwar d Drop Volt age, VF[V]
F orwa rd C urrent, IF[A]
TC=125℃TC=25℃
0
100
200
300
01 234
TC=125℃TC=25℃
0
100
200
300
400
500
600
0 2 0 40 60 80 100 120 1 40 160
TJ≤150℃
VGE ≥15V
500
100
10
1
0.10.1 1 10 100 1000
Single N on-re petitive
Pulse Tc= 25℃
Curves must be derated
linerarly with increase
In temperature
Coll e c to r Curr ent, I C[A]
Collect or-Emit t er Voltage, VCE [V]
Fig14. SOA characteristics
DC Oper ation
1ms
100us
50us
I c M A X. ( P ulsed)
I c M A X. ( Continuous)
Copyright @ Dawin Electronics Corp. A ll r ight reserved
DM2G100SH6N
Sep. 2008
P ackage Ou t L ine In for mati o n
7/7
7DM-1
1
2
3
80±0.3
23±0.5 23±0.5
93±0.3 M5 DP9
Φ6. 4 ±0. 2
Mounting Hole
4±0.3
17±0.5
LABEL PLATE
6±0.2 16.5±0.2
1±0.05
MAX 31
22±0.5
90±0.5
Dimensions in mm
6.1±0.5
32±0.5
12±0.5
35±0.5
5
4
6
7
18.5±0.2
12±0.2
15.5±0.2
14.5±0.3
35±0.5
5±0.3
4±0.3
D W
2.8±0.05
9.8±0.2
Bolt Depth
