NPT1007
NDS-012 Rev. 3, April 2013NPT1007 Page 1
FEATURES
• Optimized for narrowband and broadband
applications from from DC – 1200MHz
• 200W P3dB CW power at 900MHz in quadrature
combined or push-pull conguration
• 90W CW power from 500-1000MHz in application
design AD-014
• High efciency from 14V to 28V
• 1.0 °C/W RTH with maximum TJ rating of 200°C
• Robust up to 10:1 VSWR mismatch at all angles
with no device degradation
• Subject to EAR99 export control
DC – 1200 MHz
14 – 28 Volt
GaN HEMT
RF Specications (CW): VDS = 28V, IDQ = 1400mA1, Frequency = 900MHz, TA = 25°C, Measured in Nitronex Quadrature
Combined Test Fixture2.
Gallium Nitride 28V, 200W RF Power Transistor
Built using the SIGANTIC® NRF1 process - A proprietary GaN-on-Silicon technology
Typical 2-Tone Performance: VDS = 28V, IDQ = 1400mA1, Frequency = 900MHz, Tone spacing = 1MHz, TA = 25°C
Measured in Nitronex Quadrature Combined Test Fixture2 .
Symbol Parameter Typ Units
P3dB,PEP Peak Envelope Power at 3dB Gain Compression 53.4 dBm
P1dB,PEP Peak Envelope Power at 1dB Gain Compression 52.6 dBm
PIMD3 Peak Envelope Power at -35dBc IMD3 50.8 dBm
Symbol Parameter Min Typ Max Units
P3dB Average Output Power at 3dB Gain Compression 52.0 53.0 -dBm
GSS Small Signal Gain 17.3 18.3 -dB
hDrain Efciency at 3dB Gain Compression2157 63 -%
VSWR 10:1 VSWR at all phase angles No change in device performance
Note 1: 700mA per transistor. Each gate should be biased independently to set desired IDQ.
Note 2: Includes ~ 0.2 dB quadrature combiner loss.
Note 1: 700mA per transistor. Each gate should be biased independently to set desired IDQ.
Note 2: Includes ~ 0.2 dB quadrature combiner loss.
NPT1007
NDS-012 Rev. 3, April 2013NPT1007 Page 2
Absolute Maximum Ratings: Not Simultaneous, Per Transistor, TA = 25°C Unless Otherwise Noted
Symbol Parameter Min Typ Max Units
Off Characteristics
VBDS
Drain-Source Breakdown Voltage
(VGS = -8V, ID = 36mA) 100 - - V
IDLK
Drain-Source Leakage Current
(VGS = -8V, VDS = 60V) - 9 18 mA
On Characteristics
VT
Gate Threshold Voltage
(VDS = 28V, ID = 36mA) -2.3 -1.8 -1.3 V
VGSQ
Gate Quiescent Voltage
(VDS = 28V, ID = 700mA) -2.0 -1.5 -1.0 V
RON
On Resistance
(VGS = 2V, ID = 270mA) -0.13 0.14 W
ID,MAX
Drain Current
(VDS = 7V pulsed, 300ms pulse width,
0.2% duty cycle)
19.0 20.5 -A
Symbol Parameter Max Units
VDS Drain-Source Voltage 100 V
VGS Gate-Source Voltage -10 to 3 V
IGGate Current 180 mA
PTTotal Device Power Dissipation (Derated above 25°C), both transistors on 175 W
qJC
Thermal Resistance (Junction-to-Case),
composite for both transistors on, TJ = 180°C 1.0
°C/W
Thermal Resistance (Junction-to-Case),
one transistor on, one off, TJ = 180°C 1.8
TSTG Storage Temperature Range -65 to 150 °C
TJOperating Junction Temperature 200 °C
HBM Human Body Model ESD Rating (per JESD22-A114) 1C (>1000V)
MM Machine Model ESD Rating (per JESD22-A115) A (>100V)
CDM Charge Device Model ESD Rating (per JESD22-C101) IV (>4000V)
DC Specications: Per Transistor, TA = 25°C
NPT1007
NDS-012 Rev. 3, April 2013NPT1007 Page 3
Table 1: Optimum Source and Load Impedances for CW Gain, Drain Efciency, and Output Power Performance
Frequency
(MHz) ZS (W)ZL (W)PSAT
(dBm) GSS (dB) Drain Efciency
@ PSAT (%)
500 1.4 + j0.1 2.0 + j0.5 50.0 24.0 70%
900 1.6 - j1.5 2.3 - j1.5 50.0 18.5 74%
1200 1.8 - j2.7 3.5 - j2.8 49.5 16.5 62%
Figure 1 - Optimum Impedances for
CW Performance
Load-Pull Data, Reference Plane at Device Leads
VDS=28V, IDQ=700mA, One Single-Ended Transistor, TA=25°C Unless Otherwise Noted
Figure 2 - Load-Pull Contours, 500MHz,
PIN = 25dBm, ZS = 1.4 + j0.1 W
Figure 3 - Load-Pull Contours, 900MHz,
PIN = 30dBm, ZS = 1.6 - j1.5 W
Figure 4 - Load-Pull Contours, 1200MHz,
PIN = 32dBm, ZS = 1.8 - j2.7 W
49.5dBm
73%
49.5dBm
67%
48.5dBm
61%
NPT1007
NDS-012 Rev. 3, April 2013NPT1007 Page 4
Load-Pull Data per Device Lead, Reference Plane at Device Leads
VDS=28V, IDQ=700mA, One Single-Ended Transistor, TA=25°C unless otherwise noted.
Figure 5 - Typic al CW Per formanc e,
over Frequency
Figure 6 - Typical CW Performance
over Frequency
Figure 7 - Typical Pulsed Performance,
Frequency = 900MHz, Duty Cycle = 10%
Figure 8 - Typical CW Performance at VDS = 20V
Frequency = 900MHz
NPT1007
NDS-012 Rev. 3, April 2013NPT1007 Page 5
Typical Device Characteristics
VDS=28V, IDQ=700mA, One Single-Ended Transistor, TA=25°C unless otherwise noted.
Figure 9 - Typic al IMD3 Per f ormanc e,
Frequency = 900MHz, Tone spacing = 1MHz
Figure 10 - Typical CW Performance
over Temperature, Frequency = 900MHz
Figure 11 - Quiescient Gate Voltage (VGSQ)
Required to Reach IDQ over Temperature
Figure 12 - MTTF of NRF1 devices as a
function of junction temperature
Nitronex Quadrature Combined Test Fixture
VDS=28V, IDQ=1400mA, TA=25°C unless otherwise noted.
NPT1007
NDS-012 Rev. 3, April 2013NPT1007 Page 6
Figure 13 - AC780B-4 Metal-Ceramic Package Dimensions and Pinout (all dimensions are in inches [mm])
Ordering Information1
Part Number Description
NPT1007B NPT1007 in AC780B-4 Metal-Ceramic Bolt-Down Package
1: To nd a Nitronex contact in your area, visit our website at http://www.nitronex.com
NPT1007
NDS-012 Rev. 3, April 2013NPT1007 Page 7
Nitronex, LLC
2305 Presidential Drive
Durham, NC 27703 USA
+1.919.807.9100 (telephone)
+1.919.807.9200 (fax)
info@nitronex.com
www.nitronex.com
Additional Information
This part is lead-free and is compliant with the RoHS directive
(Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment).
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