1 - 1
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS
1
HMC-C026
WIDEBAND HIGH GAIN POWER AMPLIFIER
MODULE, 2 - 20 GHz
v03.1007
Functional Diagram
Typical Applications
General Description
Features
Electrical Speci cations, TA = +25° C, +Vdc = +11V to +16V, -Vdc = -3V to -12V
The HMC-C026 Wideband PA is ideal for:
• Telecom Infrastructure
• Microwave Radio & VSAT
• Military & Space
• Test Instrumentation
• Fiber Optics The HMC-C026 is a GaAs MMIC pHEMT Distributed
Power Ampli er in a miniature, hermetic module with
replaceable SMA connectors which operates between
2 and 20 GHz. The ampli er provides 31 dB of gain,
2.5 dB noise  gure, +30 dBm output IP3 and up to
+26 dBm of output power at 1 dB gain compression.
The wideband ampli er I/Os are internally matched
to 50 Ohms and are DC blocked making the HMC-
C026 ideal for EW, ECM RADAR and test equipment
applications. Integrated voltage regulators allow for
exible biasing of both the negative and positive
supply pins, while internal bias sequencing circuitry
assures robust operation.
Gain: 31 dB @ 6 GHz
P1dB Output Power: +26 dBm @ 6 GHz
Noise Figure: 2.5 dB @ 8 GHz
Spurious-Free Operation
Regulated Supply and Bias Sequencing
Hermetically Sealed Module
Field Replaceable SMA connectors
-55 °C to +85 °C Operating Temperature
Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units
Frequency Range 2 - 6 6 - 12 12 - 16 16 - 20 GHz
Gain 28 31 26 29 24 27 19 22 dB
Gain Flatness ±0.25 ±0.75 ±1.0 ±2.0 dB
Gain Variation Over Temperature 0.03 0.04 0.03 0.04 0.03 0.04 0.03 0.04 dB/ °C
Noise Figure 3.0 5.0 2.5 3.5 3.0 4.0 3.5 5.0 dB
Input Return Loss 15 15 13 10 dB
Output Return Loss 15 15 10 8 dB
Output Power for 1 dB
Compression (P1dB) 23 26 22.5 25.5 20 24 18 21 dBm
Saturated Output Power (Psat) 27.5 27 25 23 dBm
Output Third Order Intercept (IP3) 33 30 27 24 dBm
Positive Supply Current (+IDC) 400 450 400 450 400 450 400 450 mA
Negative Supply Current (-IDC) 3.2 5 3.2 5 3.2 5 3.2 5 mA
1 - 2
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS
1
Noise Figure vs. Temperature
Gain vs. Temperature
Output Return Loss vs. Temperature
Gain & Return Loss
Reverse Isolation vs. Temperature
Input Return Loss vs. Temperature
-25
-15
-5
5
15
25
35
0 4 8 12 16 20 24
S21
S11
S22
RESPONSE (dB)
FREQUENCY (GHz)
-25
-20
-15
-10
-5
0
0 2 4 6 8 10 12 14 16 18 20 22
+25 C
+85 C
-55 C
RETURN LOSS (dB)
FREQUENCY (GHz)
0
2
4
6
8
10
0 3 6 9 12 15 18 21
+25 C
+85 C
-55 C
NOISE FIGURE (dB)
FREQUENCY (GHz)
-80
-70
-60
-50
-40
-30
-20
-10
0
0 2 4 6 8 10 12 14 16 18 20 22
+25 C
+85 C
-55 C
ISOLATION (dB)
FREQUENCY (GHz)
-25
-20
-15
-10
-5
0
0 2 4 6 8 10 12 14 16 18 20 22
+25 C
+85 C
-55 C
RETURN LOSS (dB)
FREQUENCY (GHz)
6
10
14
18
22
26
30
34
38
0 3 6 9 12 15 18 21
+25 C
+85 C
-55 C
GAIN (dB)
FREQUENCY (GHz)
HMC-C026
v03.1007
WIDEBAND HIGH GAIN POWER AMPLIFIER
MODULE, 2 - 20 GHz
1 - 3
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS
1
Absolute Maximum Ratings
RF Input Power (RFIN) +23 dBm
Positive Bias Supply Voltage (+Vdc) +17V Max
Negative Bias Supply (-Vdc) -16V Min.
Thermal Resistance (at +Vdc = 12V,
-Vdc = -4V, DC Power = 4.8 Watts) 15.9 °C/W
Storage Temperature -65 to +150 °C
Operating Temperature -55 to +85 °C
P1dB vs. Temperature Psat vs. Temperature
Output IP3 vs. Temperature
16
20
24
28
32
36
40
0 3 6 9 12 15 18 21
+25 C
+85 C
-55 C
IP3 (dBm)
FREQUENCY (GHz)
10
14
18
22
26
30
0 3 6 9 12 15 18 21
+25 C
+85 C
-55 C
Psat (dBm)
FREQUENCY (GHz)
10
12
14
16
18
20
22
24
26
28
30
0 2 4 6 8 10 12 14 16 18 20 22
+25 C
+85 C
-55 C
P1dB (dBm)
FREQUENCY (GHz)
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
HMC-C026
v03.1007
WIDEBAND HIGH GAIN POWER AMPLIFIER
MODULE, 2 - 20 GHz
1 - 4
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS
1
Pin Number Function Description Interface Schematic
1RFIN &
RF Ground
RF input connector, SMA female,  eld replaceable.
This pin is AC coupled and matched to 50 Ohms.
2 +Vdc Positive power supply voltage for the ampli er.
3RFOUT &
RF Ground
RF output connector, SMA female. This pin is AC coupled
and matched to 50 Ohms.
4 -Vdc Negative power supply voltage for the ampli er
5 GND Power supply ground.
Pin Descriptions
HMC-C026
v03.1007
WIDEBAND HIGH GAIN POWER AMPLIFIER
MODULE, 2 - 20 GHz
1 - 5
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS
1Outline Drawing
NOTES:
1. PACKAGE, LEADS, COVER MATERIAL: KOVAR™
2. SPACER MATERIAL: ALUMINUM
3. PLATING: ELECTROLYTIC GOLD 50 MICROINCHES MIN., OVER
ELECTROLYTIC NICKEL 75 MICROINCHES MIN.
4. ALL DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. TOLERANCES ±.005 [0.13] UNLESS OTHERWISE SPECIFIED.
6. FIELD REPLACEABLE SMA CONNECTORS.
TENSOLITE 5602 - 5CCSF OR EQUIVALENT.
7. TO MOUNT MODULE TO SYSTEM PLATFORM REPLACE 0 -80
HARDWARE WITH DESIRED MOUNTING SCREWS.
HMC-C026
v03.1007
WIDEBAND HIGH GAIN POWER AMPLIFIER
MODULE, 2 - 20 GHz
Package Information
Package Type C-3B
Package Weight [1] 12 gms [2]
Spacer Weight N/A
[1] Includes the connectors
[2] ±1 gms Tolerance
1 - 6
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS
1
Notes:
HMC-C026
v03.1007
WIDEBAND HIGH GAIN POWER AMPLIFIER
MODULE, 2 - 20 GHz