Supertex inc.
Supertex inc.
www.supertex.com
TN5335
Doc.# DSFP-TN5335
B081213
DRAIN
SOURCE
GATE
Features
►Low threshold
►High input impedance
►Low input capacitance
►Fast switching speeds
►Low on-resistance
►Free from secondary breakdown
►Low input and output leakage
►Complementary N- and P-channel devices
Applications
►Logic level interfaces - ideal for TTL and CMOS
►Solid state relays
►Battery operated systems
►Photo voltaic drives
►Analog switches
►General purpose line drivers
►Telecom switches
General Description
This low threshold, enhancement-mode (normally-off)
transistor utilizes a vertical DMOS structure and Supertex’s
well-proven, silicon-gate manufacturing process. This
combination produces a device with the power handling
capabilities of bipolar transistors and the high input impedance
and positive temperature coefcient inherent in MOS devices.
Characteristic of all MOS structures, this device is free
from thermal runaway and thermally-induced secondary
breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide
range of switching and amplifying applications where very
low threshold voltage, high breakdown voltage, high input
impedance, low input capacitance, and fast switching speeds
are desired.
N-Channel Enhancement-Mode
Vertical DMOS FET
Absolute Maximum Ratings
Parameter Value
Drain-to-source voltage BVDSS
Drain-to-gate voltage BVDGS
Gate-to-source voltage ±20V
Operating and storage temperature -55OC to +150OC
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
Pin Conguration
TO-243AA (SOT-89)
Product Marking
TO-243AA (SOT-89)
TN3SW W = Code for week sealed
= “Green” Packaging
TO-236AB (SOT-23)
TO-236AB (SOT-23)
N3SW W = Code for week sealed
= “Green” Packaging
Package may or may not include the following marks: Si or
Package may or may not include the following marks: Si or
GATE
SOURCE
DRAIN
DRAIN
Ordering Information
Part Number Package Option Packing
TN5335K1-G TO-236AB (SOT-23) 3000/Reel
TN5335N8-G TO-243AA (SOT-89) 2000/Reel
Product Summary
BVDSS/BVDGS
RDS(ON)
(max)
ID(ON)
(min)
VGS(th)
(max)
350V 15Ω750mA 2.0V
Typical Thermal Resistance
Package θja
TO-236AB (SOT-23) 203OC/W
TO-243AA (SOT-89) 173OC/W
-G denotes a lead (Pb)-free / RoHS compliant package.
Contact factory for Wafer / Die availablity.
Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.