Feb.1999
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR08AS-8
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
•IT (RMS) .....................................................................0.8A
•V
DRM .......................................................................400V
•I
FGT !, IRGT !, IRGT #.............................................5mA
•I
FGT #.....................................................................10mA
BCR08AS-8
APPLICATION
Hybrid IC, solid state relay,
control of household equipment such as electric fan · washing machine,
other general purpose control applications
Symbol
IT (RMS)
ITSM
I2t
PGM
PG (AV)
VGM
IGM
Tj
Tstg
—
Parameter
RMS on-state current
Surge on-state current
I2t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Weight
Conditions
Commercial frequency, sine full wave 360° conduction, Ta=40°C ✽4
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
Unit
A
A
A2s
W
W
V
A
°C
°C
mg
Ratings
0.8
8
0.26
1
0.1
6
1
–40 ~ +125
–40 ~ +125
48
Symbol
VDRM
VDSM
Parameter
Repetitive peak off-state voltage ✽1
Non-repetitive peak off-state voltage ✽1
Voltage class
8 (marked “B•”)
400
500
Unit
V
V
MAXIMUM RATINGS
✽1. Gate open.
2
1
3
1
2
3
T
1
TERMINAL
T
2
TERMINAL
GATE TERMINAL
4.4±0.1 1.5±0.1
1.6±0.2
0.4±0.07
0.8 MIN
2.5±0.1
3.9±0.3
0.4+0.03
–0.05
123
(Back side)
OUTLINE DRAWING
Dimensions
in mm
SOT-89
0.5±0.07
1.5±0.11.5±0.1
Feb.1999
Symbol
IDRM
VTM
VFGT !
VRGT !
VRGT #
VFGT #
IFGT !
IRGT !
IRGT #
IFGT #
VGD
Rth (j-a)
(dv/dt)c
Test conditions
Tj=125°C, VDRM applied
Tc=25°C, ITM=1.2A, Instantaneous measurement
Tj=25°C, VD=6V, RL=6Ω, RG=330Ω
Tj=25°C, VD=6V, RL=6Ω, RG=330Ω
Tj=125°C, VD=1/2VDRM
Junction to case ✽4
Unit
mA
V
V
V
V
V
mA
mA
mA
mA
V
°C/W
V/µs
Typ.
—
—
—
—
—
—
—
—
—
—
—
—
—
!
@
#
$
!
@
#
$
✽2.Measurement using the gate trigger characteristics measurement circuit.
✽3.The critical-rate of rise of the off-state commutating voltage is shown in the table below.
✽4.Mounted on 25mm × 25mm × t0.7mm ceramic plate with solder.
Test conditions
Voltage
class
8
VDRM
(V)
400
Unit
V/µs
Commutating voltage and current waveforms
(inductive load)
(dv/dt) c
Min.
2
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR08AS-8
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Parameter
Repetitive peak off-state current
On-state voltage
Gate trigger voltage ✽2
Gate trigger current ✽2
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutating voltage
1. Junction temperature
Tj=125°C
2. Rate of decay of on-state commutating current
(di/dt)c=–0.4A/ms
3. Peak off-state voltage
VD=400V
Limits
Min.
—
—
—
—
—
—
—
—
—
—
0.1
—
✽3
Max.
1.0
2.0
2.0
2.0
2.0
2.0
5
5
5
10
—
65
—
10–1
101
7
5
3
2
012
100
7
5
3
2
345
4
4
T
j
= 125°C
T
j
= 25°C
10023 5710
1
4
2
23 5710
2
44
6
8
10
0
MAXIMUM ON-STATE CHARACTERISTICS
ON-STATE CURRENT (A)
ON-STATE VOLTAGE (V)
RATED SURGE ON-STATE CURRENT
SURGE ON-STATE CURRENT (A)
CONDUCTION TIME
(CYCLES AT 60Hz)
SUPPLY
VOLTAGE TIME
TIME
TIME
MAIN CURRENT
MAIN
VOLTAGE
(di/dt)c
V
D
(dv/dt)c
PERFORMANCE CURVES
Feb.1999
10
0
2310
0
5710
1
23 5710
2
23 5710
3
10
2
7
5
3
2
10
1
7
5
3
2
7
5
3
2
10
–1
V
GM
= 10V
V
GT
P
GM
= 1W
P
G(AV)
= 0.1W
I
GM
= 1A
V
GD
= 0.2VI
FGT III
I
FGT I
,
I
RGT I
, I
RGT III
MAXIMUM ON-STATE POWER
DISSIPATION
ON-STATE POWER DISSIPATION (W)
RMS ON-STATE CURRENT (A)
ALLOWABLE CASE TEMPERATURE
VS. RMS ON-STATE CURRENT
CASE TEMPERATURE (°C)
RMS ON-STATE CURRENT (A)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
TRANSIENT THERMAL IMPEDANCE (°C/W)
CONDUCTION TIME
(CYCLES AT 60Hz)
GATE CHARACTERISTICS
GATE VOLTAGE (V)
GATE CURRENT (mA)
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (°C)
100 (%)
GATE TRIGGER CURRENT (T
j
= t°C)
GATE TRIGGER CURRENT (T
j
= 25°C)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (°C)
100 (%)
GATE TRIGGER VOLTAGE (T
j
= t°C)
GATE TRIGGER VOLTAGE (T
j
= 25°C)
10
1
10
3
7
5
3
2
–60 –20 20
10
2
7
5
3
2
60 100 140
4
4
–40 0 40 80 120
V
RGT I
V
RGT III
V
FGT I
V
FGT III
TYPICAL EXAMPLE
10
1
10
3
7
5
3
2
–60 –20 20
10
2
7
5
3
2
60 100 140
4
4
–40 0 40 80 120
I
FGT I
I
RGT III
I
RGT I
I
FGT III
TYPICAL EXAMPLE
2.0
1.6
1.2
0.8
0.4
02.00 0.4 0.8 1.2 1.6
360°
CONDUCTION
RESISTIVE,
INDUCTIVE
LOADS
160
120
100
60
20
01.60 0.2 0.6 1.0 1.4
40
80
140
0.4 0.8 1.2
RESISTIVE,
INDUCTIVE
LOADS
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
NATURAL CONVECTION
10
1
2310
–1
5710
0
23 5710
1
23 5710
2
10
3
7
5
3
2
10
2
7
5
3
2
7
5
3
2
10
0
2310
2
5710
3
23 5710
4
23 5710
5
JUNCTION TO AMBIENT
JUNCTION TO CASE
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR08AS-8
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
Feb.1999
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR08AS-8
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
LACHING CURRENT VS.
JUNCTION TEMPERATURE
LACHING CURRENT (mA)
JUNCTION TEMPERATURE (°C)
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
HOLDING CURRENT (mA)
JUNCTION TEMPERATURE (°C)
REPETITIVE PEAK OFF-STATE
CURRENT VS. JUNCTION
TEMPERATURE
JUNCTION TEMPERATURE (°C)
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (°C)
100 (%)
BREAKOVER VOLTAGE (T
j
= t°C)
BREAKOVER VOLTAGE (T
j
= 25°C)
COMMUTATION CHARACTERISTICS
CRITICAL RATE OF RISE OF OFF-STATE
COMMUTATING VOLTAGE (V/µs)
RATE OF DECAY OF ON-STATE
COMMUTATING CURRENT (A/ms)
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
100 (%)
BREAKOVER VOLTAGE (dv/dt = xV/µs)
BREAKOVER VOLTAGE (dv/dt = 1V/µs)
160
100
80
40
20
014040–40–60 –20 0 20 60 80
140
100120
60
120
TYPICAL EXAMPLE
14040–40–60 –20 0 20 60 80 100120
105
7
5
3
2
104
7
5
3
2
103
7
5
3
2
102
TYPICAL EXAMPLE
14040–40–60 –20 0 20 60 80 100120
102
7
5
3
2
101
7
5
3
2
100
7
5
3
2
10–1
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
TYPICAL EXAMPLE
DISTRIBUTION
231005710
123 5710
223 5710
3
120
0
20
40
60
80
100
140
160
T
j
= 125°C
TYPICAL EXAMPLE
I QUADRANT
III QUADRANT
160–40 0 40 80 120
102
7
5
3
2
101
7
5
3
2
100
7
5
3
2
10–1
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
T
2
+
, G
–
TYPICAL EXAMPLE
TYPICAL
EXAMPLE
DISTRIBUTION
T
2
+
, G
+
T
2
–
, G
–
T
2
–
, G
+
100
2310–1 5710
023 5710
123 5710
2
102
7
5
3
2
101
7
5
3
2
7
5
3
2
10–1
TYPICAL
EXAMPLE
T
j
= 125°C
I
T
= 1A
τ = 500µs
V
D
= 200V
f = 3Hz
V
D
t
(dv/dt)
C
t
I QUADRANT
III QUADRANT
MINIMUM
CHARAC-
TERISTICS
VALUE
VOLTAGE WAVEFORM
CURRENT WAVEFORM
I
T
τ(di/dt)
C
100 (%)
REPETITIVE PEAK OFF-STATE CURRENT (T
j
= t°C)
REPETITIVE PEAK OFF-STATE CURRENT (T
j
= 25°C)
Feb.1999
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
GATE CURRENT PULSE WIDTH (µs)
100 (%)
GATE TRIGGER CURRENT (tw)
GATE TRIGGER CURRENT (DC)
10
1
10
3
7
5
3
2
10
0
23 5710
1
10
2
7
5
3
2
23 5710
2
4
4
44
I
RGT I
I
RGT III
I
FGT I
I
FGT III
TYPICAL EXAMPLE
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR08AS-8
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
6Ω6Ω
6Ω6Ω
6V 6V
6V 6V
R
G
R
G
R
G
R
G
A
V
A
V
A
V
A
V
TEST PROCEDURE 1
TEST PROCEDURE 3
TEST PROCEDURE 2
TEST PROCEDURE 4
GATE TRIGGER CHARACTERISTICS
TEST CIRCUITS
