07/20/10
www.irf.com 1
PD - 96326
HEXFET® Power MOSFET
AUIRF540Z
AUIRF540ZS
D2Pak
AUIRF540ZS
TO-220AB
AUIRF540Z
AUTOMOTIVE GRADE
Features
lAdvanced Process Technology
lUltra Low On-Resistance
l175°C Operating Temperature
lFast Switching
lRepetitive Avalanche Allowed up to Tjmax
lLead-Free, RoHS Compliant
lAutomotive Qualified *
Description
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per
silicon area. Additional features of this design are a 175°C
junction operating temperature, fast switching speed and
improved repetitive avalanche rating . These features
combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a wide
variety of other applications.
Absolute Maximum Ratings
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are
stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
S
D
G
GDS
Gate Drain Source
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
V
(BR)DSS
100V
R
DS(on)
typ. 21mΩ
max. 26.5mΩ
I
D
36A
Parameter Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
c
P
D
@T
C
= 25°C Power Dissipation W
Linear Derating Factor W/°C
V
GS
Gate-to-Source Voltage V
E
AS
Single Pulse Avalanche Energy (Thermally limited)
d
E
AS
(Tested ) Single Pulse Avalanche Energy Tested Value
h
I
AR
Avalanche Current
c
A
E
AR
Repetitive Avalanche Energy
c
mJ
T
J
Operating Junction and
T
S
T
G
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
i
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
Junction-to-Case ––– 1.64
R
θCS
Case-to-Sink, Flat Greased Surface
i
0.50 –––
R
θJA
Junction-to-Ambient
i
––– 62
R
θJA
Junction-to-Ambient (PCB Mount)
j
––– 40
-55 to + 175
300(1.6mm from case)
10 lbf
y
in (1.1N
y
m)
92
0.61
± 20
Max.
36
25
140
120
83
See Fig.12a, 12b, 15, 16
mJ
°C
A
°C/W
AUIRF540Z/S
2www.irf.com
S
D
G
Static Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. T
y
p. Max. Units
V
(BR)DSS
Drain-to-Source Breakdown Volta
g
e 100 ––– ––– V
∆V
(BR)DSS
/
∆T
J
Breakdown Volta
g
e Temp. Coefficient ––– 0.093 ––– V/°C
R
DS(on)
Static Drain-to-Source On-Resistance ––– 21 26.5 m
Ω
V
GS(th)
Gate Threshold Volta
g
e2.0–––4.0V
g
fs Forward Transconductance 36 ––– ––– S
I
DSS
Drain-to-Source Leaka
g
e Current ––– ––– 20
µ
A
––– ––– 250
I
GSS
Gate-to-Source Forward Leaka
g
e ––– ––– 200 nA
Gate-to-Source Reverse Leaka
g
e ––– ––– -200
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Total Gate Char
g
e ––– 42 63
Q
gs
Gate-to-Source Char
g
e ––– 9.7 –––
Q
gd
Gate-to-Drain ("Miller") Char
g
e–––15–––
t
d(on)
Turn-On Dela
y
Time –––15–––
t
r
Rise Time –––51–––
t
d(off)
Turn-Off Dela
y
Time –––43–––
t
f
Fall Time –––39–––
L
D
Internal Drain Inductance Between lead,
6mm (0.25in.)
L
S
Internal Source Inductance from packa
g
e
and center of die contact
C
iss
Input Capacitance ––– 1770 –––
C
oss
Output Capacitance ––– 180 –––
C
rss
Reverse Transfer Capacitance ––– 100 –––
C
oss
Output Capacitance ––– 730 –––
C
oss
Output Capacitance ––– 110 –––
C
oss
eff. Effective Output Capacitance ––– 170 –––
Diode Characteristics
Parameter Min. T
y
p. Max. Units
I
S
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(Body Diode)
c
V
SD
Diode Forward Volta
g
e ––– ––– 1.3 V
t
rr
Reverse Recover
y
Time –––3350ns
Q
rr
Reverse Recover
y
Char
g
e ––– 41 62 nC
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 80V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 80V
f
V
GS
= 10V
e
V
DD
= 50V
I
D
= 22A
R
G
= 12 Ω
T
J
= 25°C, I
S
= 22A, V
GS
= 0V
e
T
J
= 25°C, I
F
= 22A, V
DD
= 50V
di/dt = 100A/
µ
s
e
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 22A
e
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 100V, V
GS
= 0V
V
DS
= 100V, V
GS
= 0V, T
J
= 125°C
MOSFET symbol
showing the
integral reverse
p-n junction diode.
V
DS
= 25V, I
D
= 22A
I
D
= 22A
V
DS
= 80V
Conditions
V
GS
= 10V
e
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz
V
GS
= 20V
V
GS
= -20V
–––
–––
–––
–––
4.5
7.5
nC
ns
nH
pF
A
36
140
––– –––
––– –––
Notes through are on page 12
AUIRF540Z/S
www.irf.com 3
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Exceptions to AEC-Q101 requirements are noted in the qualification report.
Qualification Information
†
TO-220AB N/A
D
2
PAK MSL1
Qualification Level
Automotive
(per AEC-Q101)
††
Comments: This part number(s) passed
Automotive qualification. IR’s Industrial and
Consumer qualification level is granted by
extension of the higher Automotive level.
Charged Device
Model
Class C3 (750V)
(per AEC-Q101-005)
Moisture Sensitivity Level
RoHS Compliant Yes
ESD
Machine Model Class M4(400V)
(per AEC-Q101-002)
Human Body Model Class H1B(1000V)
(per AEC-Q101-001)
AUIRF540Z/S
4www.irf.com
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics Fig 4. Typical Forward Transconductance
Vs. Drain Current
0.1 110 100
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
ID, Drain-to-Source Current (A)
60µs PULSE WIDTH
Tj = 25°C
4.5V
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
0 1 10 100
0.1 110 100
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
ID, Drain-to-Source Current (A)
60µs PULSE WIDTH
Tj = 175°C
4.5V
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
4.0 5.0 6.0 7.0
VGS, Gate-to-Source Voltage (V)
1
10
100
1000
ID, Drain-to-Source Current (Α)
VDS = 25V
60µs PULSE WIDTH
TJ = 25°C
TJ = 175°C
0 1020304050
ID, Drain-to-Source Current (A)
0
20
40
60
80
Gfs, Forward Transconductance (S)
TJ = 25°C
TJ = 175°C
VDS = 10V
380µs PULSE WIDTH
AUIRF540Z/S
www.irf.com 5
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
110 100
VDS, Drain-to-Source Voltage (V)
0
500
1000
1500
2000
2500
3000
C, Capacitance (pF)
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
0 102030405060
QG Total Gate Charge (nC)
0
4
8
12
16
20
VGS, Gate-to-Source Voltage (V)
VDS= 80V
VDS= 50V
VDS= 20V
ID= 22A
FOR TEST CIRCUIT
SEE FIGURE 13
0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD, Source-toDrain Voltage (V)
0.1
1.0
10.0
100.0
1000.0
ISD, Reverse Drain Current (A)
TJ = 25°C
TJ = 175°C
VGS = 0V
1 10 100 1000
VDS , Drain-toSource Voltage (V)
0.1
1
10
100
1000
ID, Drain-to-Source Current (A)
Tc = 25°C
Tj = 175°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
AUIRF540Z/S
6www.irf.com
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10. Normalized On-Resistance
Vs. Temperature
25 50 75 100 125 150 175
TJ , Junction Temperature (°C)
0
10
20
30
40
ID , Drain Current (A)
-60 -40 -20 020 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
0.5
1.0
1.5
2.0
2.5
3.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 22A
VGS = 10V
1E-006 1E-005 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
10
Thermal Response ( Z thJC )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
AUIRF540Z/S
www.irf.com 7
Q
G
Q
GS
Q
GD
V
G
Charge
10 V
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
Fig 14. Threshold Voltage Vs. Temperature
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
VGS
-75 -50 -25 025 50 75 100 125 150 175
TJ , Temperature ( °C )
1.5
2.0
2.5
3.0
3.5
4.0
VGS(th) Gate threshold Voltage (V)
ID = 250µA
1K
VCC
DUT
0
L
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
0
20
40
60
80
100
120
140
160
180
EAS , Single Pulse Avalanche Energy (mJ)
ID
TOP 8.3A
14A
BOTTOM 20A
AUIRF540Z/S
8www.irf.com
Fig 15. Typical Avalanche Current Vs.Pulsewidth
Fig 16. Maximum Avalanche Energy
Vs. Temperature
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
1.0E-08 1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01
tav (sec)
0.1
1
10
100
1000
Avalanche Current (A)
0.05
Duty Cycle = Single Pulse
0.10
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming ∆Tj = 25°C due to
avalanche losses
0.01
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
0
10
20
30
40
50
60
70
80
90
100
EAR , Avalanche Energy (mJ)
TOP Single Pulse
BOTTOM 10% Duty Cycle
ID = 20A
AUIRF540Z/S
www.irf.com 9
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
VGS=10V
VDD
ISD
Driver Gate Drive
D.U.T. ISD Waveform
D.U.T. VDS Waveform
Inductor Curent
D = P. W .
Period
* V
GS = 5V for Logic Level Devices
*
+
-
+
+
+
-
-
-
RGVDD
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T
VDS
90%
10%
VGS
t
d(on)
t
r
t
d(off)
t
f
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RG
D.U.T.
10V
+
-
VDD
Fig 18a. Switching Time Test Circuit
Fig 18b. Switching Time Waveforms
AUIRF540Z/S
10 www.irf.com
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
YWWA
XX or XX
Part Number
IR Logo
Lot Code
AUIRF540Z
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
AUIRF540Z/S
www.irf.com 11
D2Pak Part Marking Information
D2Pak Package Outline (Dimensions are shown in millimeters (inches))
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Lot Code
YWWA
XX or XX
Part Number
IR Logo
AUIRF540ZS
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
AUIRF540Z/S
12 www.irf.com
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Limited by TJmax, starting TJ = 25°C, L = 0.46mH
RG = 25Ω, IAS = 20A, VGS =10V. Part not
recommended for use above this value.
Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
Coss eff. is a fixed capacitance that gives the
same charging time as Coss while VDS is rising
from 0 to 80% VDSS .
Notes:
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
This value determined from sample failure population
starting TJ = 25°C, L = 0.46mH RG = 25Ω, IAS = 20A, VGS =10V.
This is only applied to TO-220AB pakcage.
This is applied to D2Pak, when mounted on 1" square PCB (FR-
4 or G-10 Material). For recommended footprint and soldering
techniques refer to application note #AN-994.
3
4
4
TRR
FEED DIRECTION
1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
TRL
FEED DIRECTION
10.90 (.429)
10.70 (.421)
16.10 (.634)
15.90 (.626)
1.75 (.069)
1.25 (.049)
11.60 (.457)
11.40 (.449) 15.42 (.609)
15.22 (.601)
4.72 (.136)
4.52 (.178)
24.30 (.957)
23.90 (.941)
0.368 (.0145)
0.342 (.0135)
1.60 (.063)
1.50 (.059)
13.50 (.532)
12.80 (.504)
330.00
(14.173)
MAX.
27.40 (1.079)
23.90 (.941)
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
26.40 (1.039)
24.40 (.961)
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
D2Pak Tape & Reel Infomation
AUIRF540Z/S
www.irf.com 13
Ordering Information
Base
p
art Packa
g
e T
yp
e Standard Pac
k
Com
p
lete Part Number
Form Quantit
y
AUIRF540Z TO-220 Tube 50 AUIRF540Z
AUIRF540ZS D2Pak Tube 50 AUIRF540ZS
Tape and Reel Left 800 AUIRF540ZSTRL
Tape and Reel Right 800 AUIRF540ZSTRR
AUIRF540Z/S
14 www.irf.com
For technical support, please contact IR’s Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245
Tel: (310) 252-7105
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve
the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services
at any time and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow
automotive industry and / or customer specific requirements with regards to product discontinuance and process change
notification. All products are sold subject to IR’s terms and conditions of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s
standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this
warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily
performed.
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