APTGF660U60D4G Single switch NPT IGBT Power Module 1 3 5 2 VCES = 600V IC = 660A @ Tc = 80C Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Motor control Features * Non Punch Through (NPT) IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated * Kelvin emitter for easy drive * M6 connectors for power * M4 connectors for signal * High level of integration Benefits * Outstanding performance at high frequency operation * Stable temperature behavior * Very rugged * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * RoHS Compliant Absolute maximum ratings Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation TC = 25C Reverse Bias Safe Operating Area Tj = 125C 1600A@520V TC = 25C TC = 80C TC = 25C Unit V A July, 2008 IC Max ratings 600 860 660 1320 20 2800 RBSOA Parameter Collector - Emitter Breakdown Voltage V W These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-5 APTGF660U60D4G - Rev 2 Symbol VCES APTGF660U60D4G All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions Min Tj = 25C Tj = 125C Tj = 25C VGE = 15V IC = 800A Tj = 125C VGE = VCE , IC = 16mA VGE = 20V, VCE = 0V Typ VGE = 0V VCE = 600V 4.5 1.95 2.2 5.5 Max Unit 500 1 2.45 A mA 6.5 2400 V nA Max Unit V Dynamic Characteristics Symbol Characteristic Cies Input Capacitance Cres Reverse Transfer Capacitance QG Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Gate charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Tf Fall Time Eon Turn on Energy Eoff Turn off Energy Isc Short Circuit data Test Conditions VGE = 0V, VCE = 25V f = 1MHz VGE=15V, IC=800A VCE=300V Inductive Switching (25C) VGE = 15V VBus = 300V IC = 800A RG = 16 Inductive Switching (125C) VGE = 15V VBus = 300V IC = 800A RG = 16 VGE = 15V Tj = 125C VBus = 300V IC = 800A Tj = 125C RG = 16 VGE 15V ; VBus = 360V tp 10s ; Tj = 125C Min Test Conditions Min 600 Typ 36 3.2 nF 2 C 150 72 ns 530 40 160 75 550 ns 50 36 mJ 33 mJ 3600 A Reverse diode ratings and characteristics IF Maximum Reverse Leakage Current VR = 600V DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Err Reverse Recovery Energy IF = 800A VGE = 0V IF = 800A VR = 300V di/dt =7000A/s www.microsemi.com Tj = 25C Tj = 125C Tc = 80C Tj = 25C Tj = 125C Tj = 25C Tj = 125C 800 1.25 1.2 150 250 Tj = 25C 57 Tj = 125C Tj = 25C Tj = 125C 80 11.6 22.8 Max 750 1000 Unit V A A 1.6 V ns July, 2008 IRRM Typ C mJ 2-5 APTGF660U60D4G - Rev 2 Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage APTGF660U60D4G Thermal and package characteristics Symbol Characteristic Min IGBT Diode RthJC Junction to Case Thermal Resistance VISOL TJ TSTG TC RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Torque Mounting torque Wt Package Weight M6 M4 2500 -40 -40 -40 3 1 Typ Max 0.044 0.085 Unit C/W V 150 125 125 5 2 350 C N.m g www.microsemi.com 3-5 APTGF660U60D4G - Rev 2 July, 2008 D4 Package outline (dimensions in mm) APTGF660U60D4G Typical Performance Curve Output Characteristics (VGE=15V) Output Characteristics 1600 1600 TJ = 125C VGE=15V TJ=25C 1200 TJ=125C IC (A) IC (A) 1200 800 VGE=20V VGE=12V 800 VGE=9V 400 400 0 0 0 0.5 1 1.5 2 VCE (V) 2.5 3 3.5 0 70 1200 E (mJ) 50 800 TJ=125C TJ=25C Eon 40 Eoff 30 Err 0 5 6 7 8 9 10 11 0 12 300 600 Switching Energy Losses vs Gate Resistance 100 1200 Reverse Safe Operating Area 2000 VCE = 300V VGE =15V IC = 800A TJ = 125C 900 IC (A) VGE (V) Eon 1600 Eoff IC (A) E (mJ) 5 10 0 60 4 20 400 80 3 VCE (V) VCE = 300V VGE = 15V RG = 16 TJ = 125C 60 IC (A) 2 Energy losses vs Collector Current Transfert Characteristics 1600 1 40 20 1200 800 VGE=15V TJ=125C RG=16 400 Err 0 0 10 20 30 40 50 Gate Resistance (ohms) 60 0 100 200 300 400 500 600 VCE (V) maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.04 0.9 IGBT July, 2008 0.7 0.03 0.5 0.02 0.3 0.01 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 rectangular Pulse Duration (Seconds) www.microsemi.com 1 10 4-5 APTGF660U60D4G - Rev 2 Thermal Impedance (C/W) 0.05 APTGF660U60D4G VCE=300V D=50% RG=16 TJ=125C TC=75C 60 50 ZVS 40 30 1200 ZCS hard switching 20 800 TJ=125C 400 TJ=25C 10 0 0 0 200 400 600 IC (A) 800 0 1000 0.3 0.6 0.9 VF (V) 1.2 1.5 maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.1 Thermal Impedance (C/W) Forward Characteristic of diode 1600 IF (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 70 Diode 0.08 0.06 0.9 0.7 0.5 0.04 0.02 0.3 0.1 0.05 0.0001 0.001 0.01 0.1 rectangular Pulse Duration (Seconds) 1 10 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 5-5 APTGF660U60D4G - Rev 2 July, 2008 0 0.00001 Single Pulse