Ordering number : ENA1075A 2SC5277A RF Transistor http://onsemi.com 10V, 30mA, fT=8GHz, NPN Single SMCP Features * * * * * Low-noise : NF=0.9dB typ (f=1GHz) : NF=1.4dB typ (f=1.5GHz) High gain : S21e2=10dB typ (f=1.5GHz) High cut-off frequency : fT=8GHz typ Low-voltage, low-current operation (VCE=1V, IC=1mA) : fT=3.5GHz typ : S21e2=5.5dB typ (f=1.5GHz) Ultrasmall-sized package permitting applied sets to be made small and slim Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Collector-to-Base Voltage Conditions Ratings Unit VCBO VCEO 20 V 10 V VEBO IC 1.5 V 30 mA PC Tj 100 mW Junction Temperature Storage Temperature Tstg Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation 150 C --55 to +150 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7027A-002 * Package : SMCP * JEITA, JEDEC : SC-75, SOT-416 * Minimum Packing Quantity : 3,000 pcs./reel 0.1 3 0.8 TL 2 0.2 0.6 0.5 0.5 0 to 0.1 D RANK 0.4 Marking LOT No. 1 0.75 Packing Type: TL LOT No. 1.6 0.4 0.3 0.1 MIN 2SC5277A-2-TL-E 1.6 1 : Base 2 : Emitter 3 : Collector SMCP Electrical Connection 3 1 2 Semiconductor Components Industries, LLC, 2013 August, 2013 82212 TKIM/O2908AB MSIM TC-00001687 No. A1075-1/8 2SC5277A Electrical Characteristics at Ta=25C Parameter Symbol Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product ICBO IEBO VCB=10V, IE=0A VEB=1V, IC=0A hFE fT1 VCE=5V, IC=10mA VCE=5V, IC=10mA fT2 VCE=1V, IC=1mA Output Capacitance Cob Reverse Transfer Capacitance Cre Forward Transfer Gain Noise Figure Ratings Conditions min typ Unit max 60* 1.0 A 10 A 270* 5 8 GHz 3.5 GHz 0.45 VCB=10V, f=1MHz 0.7 pF 0.30 pF 10 dB 2 S21e 1 VCE=5V, IC=10mA, f=1.5GHz 2 S21e 2 VCE=1V, IC=1mA, f=1.5GHz 5.5 NF1 VCE=5V, IC=5mA, f=1.5GHz 1.4 NF2 VCE=2V, IC=3mA, f=1GHz 0.9 8 dB 3.0 dB dB * : The 2SC5277A is classified by 10mA hFE as follows : Rank hFE 1 60 to 120 2 90 to 180 3 135 to 270 Ordering Information Device Package Shipping memo SMCP 3,000pcs./reel Pb Free 2SC5277A-2-TL-E hFE -- IC 5 Gain-Bandwidth Product, fT -- GHz 3 DC Current Gain, hFE 2 100 7 5 3 2 10 fT -- IC 2 VCE=5V 10 =5V VCE =1V VCE 7 5 3 2 7 5 0.1 2 3 5 7 1.0 2 3 5 7 10 Collector Current, IC -- mA 2 3 5 7 100 ITR08213 1.0 1.0 2 3 5 7 10 Collector Current, IC -- mA 2 3 5 IT14098 No. A1075-2/8 2SC5277A Cob -- VCB 5 Reverse Transfer Capacitance, Cre -- pF Output Capacitance, Cre -- pF 3 2 1.0 7 5 3 2 0.1 7 5 7 0.1 f=1MHz 3 2 1.0 7 5 3 2 0.1 7 5 2 3 5 7 1.0 2 3 5 7 10 2 Collector-to-Base Voltage, VCB -- V 3 5 7 0.1 2 3 5 7 1.0 3 2 5 7 10 2 Collector-to-Base Voltage, VCB -- V ITR08215 NF -- IC 12 VCE=2V f=1GHz Noise Figure, NF -- dB 8 V CE = 1V 4 2 3 5 7 1.0 2 3 5V 6 0 0.1 8 6 4 2 5 7 10 2 Collector Current, IC -- mA S21e2 -- I 3 0 0.1 5 2 3 5 7 1.0 2 3 5 7 2 10 Collector Current, IC -- mA S21e2 -- I ITR08217 C 16 f=1GHz Forward Transfer Gain, S21e2 -- dB 8 6 4 2 12 2V 1V =5V VCE V 2 1V 10 14 =5V VCE 12 5 C 16 14 3 ITR08218 f=1.5GHz Forward Transfer Gain, S21e2 -- dB 5 10 2 10 8 6 4 2 0 0 3 5 7 1.0 2 3 5 7 10 2 Collector Current, IC -- mA 3 5 7 100 ITR08219 PC -- Ta 120 Collector Dissipation, PC -- mW 3 ITR08216 NF -- IC 12 f=1.5GHz 10 Noise Figure, NF -- dB Cre -- VCB 5 f=1MHz 3 5 7 1.0 2 3 5 7 10 2 Collector Current, IC -- mA 3 5 7 100 ITR08220 100 80 60 40 20 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- C 140 160 ITR08221 No. A1075-3/8 2SC5277A S11e f=200MHz to 2000MHz(200MHz Step) S21e f=200MHz to 2000MHz(200MHz Step) 120 j25 j100 j150 100 150 250 50 0.2 GH z 0.2 GH 0.2 z GH 0.2z GH z --j10 --j25 V IC CE =1 =1 V mA --j250 --j200 --j150 VCE=2V IC=3mA 0.04 0.08 0.12 0.16 0.2 0 180 --30 --150 --j100 --60 --120 --j50 --90 ITR08222 S12e f=200MHz to 2000MHz(200MHz Step) S22e f=200MHz to 2000MHz(200MHz Step) 90 j50 60 120 j25 j100 j150 30 z GH z z 2.0 GH GH 2.0 z 2.0 GH 2.0 V CE = 0.2GHz IC =1 5V 0m A 150 =5V VCE A m I C=5 Hz G 0.2 =2V 180 V CE mA z 3 H I C= 2G . 0 0.2 GH V z C IC E =1 =1 V mA ITR08223 4 j200 j250 j10 150 8 12 16 20 0 0 10 --j10 --30 --150 --j25 25 VCE =5V 250 100 50 IC =5mA VCE =5 V IC =10m A 2.0GHz 2.0GHz --j250 z --j200 2.0GH V z V CE=1 --j150 2.0GH A m 1 = I VCE=2V C --j100 IC=3mA 0.2GH 0.2GHz z 0.2 0.2G GH Hz z 10 V =5 E mA VC 5 = IC V =5 E mA V C =10 IC 2.0GHz z 2.0GHGHz 2.0 0GHz 2. 0 60 2.0 GH VC = E 1V z V IC =1mA 30 =2 A E V C =3m IC 150 j200 j250 25 j10 V IC CE = = 5 5V 0.2 0.2 0 m A GH GH .2G z z Hz 0.2 V GH C z IC = E =5V 10m A 2.0 GH z 2.0 GH 2.0 z GH z 90 j50 --60 --120 --90 ITR08224 --j50 ITR08225 No. A1075-4/8 2SC5277A S Parameters (Common emitter) VCE=5V, IC=5mA, ZO=50 Freq(MHz) 200 400 600 800 1000 1200 1400 1600 1800 2000 S11 0.782 0.623 0.502 0.420 0.369 0.339 0.311 0.296 0.285 0.277 S11 -37.1 -65.4 -85.6 -102.4 -114.7 -127.2 -137.2 -144.9 -156.5 -164.2 S21 12.043 9.431 7.415 6.000 5.025 4.323 3.785 3.391 3.018 2.767 S21 148.4 126.6 112.2 101.5 93.6 86.7 80.6 75.3 70.1 65.7 S12 0.038 0.057 0.072 0.083 0.094 0.105 0.115 0.127 0.139 0.150 S12 69.7 60.8 56.5 55.2 55.1 55.6 55.6 56.7 56.4 56.7 S22 0.889 0.758 0.646 0.577 0.538 0.513 0.490 0.480 0.466 0.460 S22 -19.5 -28.3 -33.3 -35.9 -37.6 -38.7 -39.7 -41.3 -43.5 -45.5 S11 -52.7 -85.4 -106.6 -124.1 -136.1 -146.7 -156.6 -163.2 173.5 179.8 S21 16.527 11.299 8.303 6.502 5.342 4.546 3.947 3.527 3.121 2.864 S21 137.8 115.7 103.1 94.0 87.4 81.4 76.4 71.4 67.0 62.8 S12 0.031 0.048 0.060 0.072 0.084 0.097 0.108 0.123 0.136 0.150 S12 67.4 60.5 60.0 60.9 61.9 62.7 63.0 63.7 62.8 62.4 S22 0.820 0.643 0.549 0.499 0.477 0.462 0.449 0.444 0.435 0.434 S22 -22.9 -30.2 -32.2 -33.2 -33.9 -35.0 -36.2 -37.8 -39.9 -42.4 S11 -30.4 -55.7 -76.1 -93.0 -106.1 -118.6 -129.4 -138.0 -148.8 -157.7 S21 8.644 7.310 6.083 5.085 4.343 3.806 3.349 3.036 2.685 2.479 S21 154.1 133.8 118.6 106.9 98.1 90.0 83.3 77.5 71.7 66.7 S12 0.042 0.073 0.093 0.107 0.118 0.128 0.137 0.147 0.157 0.167 S12 73.0 61.3 54.2 50.4 48.3 47.5 46.9 47.4 47.2 47.6 S22 0.937 0.820 0.709 0.628 0.572 0.536 0.506 0.485 0.463 0.453 S22 -16.4 -27.9 -35.7 -40.4 -43.7 -45.8 -47.3 -49.5 -51.9 -54.1 S11 -18.7 -36.9 -52.9 -67.9 -81.1 -94.3 -104.9 -114.1 -124.4 -134.9 S21 3.431 3.263 3.004 2.765 2.539 2.366 2.143 1.969 1.797 1.701 S21 162.9 147.1 133.2 120.4 109.9 99.8 91.2 83.6 76.2 69.7 S12 0.053 0.099 0.136 0.164 0.184 0.199 0.207 0.213 0.218 0.219 S12 78.1 66.9 57.5 49.7 43.4 38.4 34.1 31.7 28.7 27.0 S22 0.982 0.939 0.879 0.815 0.758 0.727 0.683 0.653 0.621 0.601 S22 -10.3 -19.7 -27.7 -34.8 -40.0 -44.3 -47.8 -51.4 -54.9 -58.1 VCE=5V, IC=10mA, ZO=50 Freq(MHz) 200 400 600 800 1000 1200 1400 1600 1800 2000 S11 0.641 0.468 0.377 0.321 0.293 0.280 0.266 0.263 0.263 0.264 VCE=2V, IC=3mA, ZO=50 Freq(MHz) 200 400 600 800 1000 1200 1400 1600 1800 2000 S11 0.851 0.724 0.612 0.521 0.461 0.423 0.382 0.366 0.341 0.333 VCE=1V, IC=1mA, ZO=50 Freq(MHz) 200 400 600 800 1000 1200 1400 1600 1800 2000 S11 0.945 0.892 0.826 0.754 0.691 0.639 0.589 0.558 0.522 0.490 No. A1075-5/8 2SC5277A Embossed Taping Specification 2SC5277A-2-TL-E No. A1075-6/8 2SC5277A Outline Drawing 2SC5277A-2-TL-E Land Pattern Example Mass (g) Unit 0.003 mm * For reference Unit: mm 0.7 1.3 0.7 0.7 0.6 0.5 0.5 No. A1075-7/8 2SC5277A ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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