LOW NOISE AMPLIFIERS - CHIP
1
HMC-ALH102
v03.0118
GaAs HEMT MMIC WIDEBAND
LOW NOISE AMPLIFIER, 2 - 20 GHz
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
General Description
Features
Functional Diagram
Noise Figure: 2.5 dB
Gain: 11.6 dB @ 10 GHz
P1dB Output Power: +10 dBm
Supply Voltage: +2V @ 55 mA
Die Size: 3.0 x 1.435 x 0.1 mm
Electrical Specications, TA = +25° C, Vdd= 2V [1], Idd = 55mA [2]
Typical Applications
This HMC-ALH102 is ideal for:
• Wideband Communications Receivers
• Surveillance Systems
• Point-to-Point Radios
• Point-to-Multi-Point Radios
• Military & Space
• Test Instrumentation
The HMC-ALH102 is a GaAs MMIC HEMT Low Noise
Distributed Amplier die which operates between
2 and 20 GHz. The amplier provides 11.6 dB of gain
at 10 GHz, 2.5 dB noise gure and +10 dBm of out-
put power at 1 dB gain compression while requiring
only 55 mA from a +2V supply voltage. The HMC-
ALH102 amplier is ideal for integration into Multi-
Chip-Modules (MCMs) due to its small size.
Parameter Min. Typ. Max. Units
Frequency Range 2 - 20 GHz
Gain 810 dB
Input Return Loss 15 dB
Output Return Loss 12 dB
Output Power for 1 dB Compression 8 10 dBm
Noise Figure 2.5 dB
Supply Current (Idd) 55 mA
[1] Unless otherwise indicated, all measurements are from probed die
[2] Adjust Vgg between -1V to +0.3V (Typ. -0.5V) to achieve Idd= 55 mA
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
LOW NOISE AMPLIFIERS - CHIP
2
HMC-ALH102
v03.0118
GaAs HEMT MMIC WIDEBAND
LOW NOISE AMPLIFIER, 2 - 20 GHz
Noise Figure vs. Frequency
Output Return Loss vs. Frequency
Linear Gain vs. Frequency
Input Return Loss vs. Frequency
Note: Measured Performance Characteristics (Typical Performance at 25°C) Vd= 2.0 V, Id = 55 mA
0
4
8
12
16
2 6 10 14 18 22
GAIN (dB)
FREQUENCY (GHz)
-25
-20
-15
-10
-5
0
2 6 10 14 18 22
RETURN LOSS (dB)
FREQUENCY (GHz)
-25
-20
-15
-10
-5
0
2 6 10 14 18 22
RETURN LOSS (dB)
FREQUENCY (GHz)
0
1
2
3
4
5
2 6 10 14 18 22
NOISE FIGURE (dB)
FREQUENCY (GHz)
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
LOW NOISE AMPLIFIERS - CHIP
3
HMC-ALH102
v03.0118
GaAs HEMT MMIC WIDEBAND
LOW NOISE AMPLIFIER, 2 - 20 GHz
Outline Drawing
Absolute Maximum Ratings
Drain Bias Voltage +3.7 Vdc
Gate Bias Voltage -1 to +0.3 Vdc
RF Input Power 5 dBm
Channel Temperature 180 °C
Continuous Pdiss (T = 85 °C)
(derate 9.87 mW/°C above 85 °C) 0.94 W
Thermal Resistance
(channel to die bottom) 101.4 °C/W
Storage Temperature -65 to +150 °C
Operating Temperature -55 to +85 °C
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM].
2. TYPICAL BOND PAD IS .004” SQUARE.
3. BACKSIDE METALLIZATION: GOLD.
4. BACKSIDE METAL IS GROUND.
5. BOND PAD METALLIZATION: GOLD.
6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
7. OVERALL DIE SIZE ±.002”
Die Packaging Information [1]
Standard Alternate
GP-2 (Gel Pack) [2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
LOW NOISE AMPLIFIERS - CHIP
4
HMC-ALH102
v03.0118
GaAs HEMT MMIC WIDEBAND
LOW NOISE AMPLIFIER, 2 - 20 GHz
Pad Number Function Pad Description Interface Schematic
1RFIN This pas is AC coupled and matched to 50 Ohms.
2Vdd Power Supply Voltage for the amplier. See Assembly Dia-
gram for required external components.
3, 5 Vgg
Gate control for amplier. Please follow “MMIC Amplier Bias-
ing Procedure” application note. See assembly for required
external components.
4RFOUT This pad is AC coupled and matched to 50 Ohms.
Die Bottom GND Die Bottom must be connected to RF/DC ground.
Pad Descriptions
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
LOW NOISE AMPLIFIERS - CHIP
5
HMC-ALH102
v03.0118
GaAs HEMT MMIC WIDEBAND
LOW NOISE AMPLIFIER, 2 - 20 GHz
Assembly Diagram
Note 1: Bypass caps should be 100 pF (approximately) ceramic (single-layer) placed no farther than 30 mils from the amplier
Note 2: Best performance obtained from use of <10 mil (long) by 3 by 0.5 mil ribbons on input and output.10 Ohms
Note 3: Gate bond pads (VG) exist on the upper & lower sides of the MMIC for assembly convenience. For best performance the
unused pad should be attached to a 100pF cap to ground, but is not required.
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
LOW NOISE AMPLIFIERS - CHIP
6
HMC-ALH102
v03.0118
GaAs HEMT MMIC WIDEBAND
LOW NOISE AMPLIFIER, 2 - 20 GHz
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin lm
substrates are recommended for bringing RF to and from the chip (Figure 1). If
0.254mm (10 mil) thick alumina thin lm substrates must be used, the die should be
raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface
of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick
die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then
attached to the ground plane (Figure 2).
Microstrip substrates should be brought as close to the die as possible in order to
minimize bond wire length. Typical die-to-substrate spacing is 0.076mm (3 mils).
Handling Precautions
Follow these precautions to avoid permanent damage.
Storage: All bare die are placed in either Waffle or Gel based ESD protective
containers, and then sealed in an ESD protective bag for shipment. Once the
sealed ESD protective bag has been opened, all die should be stored in a dry
nitrogen environment.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean
the chip using liquid cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against > ± 250V ESD
strikes.
Transients: Suppress instrument and bias supply transients while bias is applied.
Use shielded signal and bias cables to minimize inductive pick-up.
General Handling: Handle the chip along the edges with a vacuum collet or with
a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and
should not be touched with vacuum collet, tweezers, or ngers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or
with electrically conductive epoxy. The mounting surface should be clean and at.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work
surface temperature of 255 °C and a tool temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip
temperature should be 290 °C. DO NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more
than 3 seconds of scrubbing should be required for attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy llet is observed around the
perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
Ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire is recommended. Thermosonic wirebonding with a nominal stage
temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use
the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on
the package or substrate. All bonds should be as short as possible <0.31 mm (12 mils).
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
RF Ground Plane
0.127mm (0.005”) Thick Alumina
Thin Film Substrate
0.076mm
(0.003”)
Figure 1.
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
RF Ground Plane
0.254mm (0.010”) Thick Alumina
Thin Film Substrate
0.076mm
(0.003”)
Figure 2.
0.150mm (0.005”) Thick
Moly Tab
