Power Integrated Module (PIM)
nn Features
• • Included Rectifier and Brake Chopper
• Square RBSOA
• Low Saturation Voltage
• • Overcurrent Limiting Function
( ~ 3 Times Rated Current )
nn Equivalent Circuit
nn Outline Drawing
nn Absolute Maximum Ratings ( Tc=25°C)
Items Symbols Test Conditions Ratings Units
Collector-Emitter Voltage V
CES
600
Gate -Emitter Voltage V
GES
± 20
I
C
Continuous 50
Collector Current I
C PULSE
1ms 100 A
-I
C PULSE
1ms 50
Collector Power Dissipation P
C
1 device 200 W
Repetitive Peak Reverse Voltage V
RRM
800
Non Repetitive Peak Reverse Voltage V
RSM
900
Average Output Current I
O
50Hz/60Hz sin. wave 50
Surge Current (Non Repetitive) I
FSM
Tj=150°C, 10ms 350
I2t(Non Repetitive) Tj=150°C, 10ms 648 A2s
Collector-Emitter Voltage V
CES
600
Gate -Emitter Voltage V
GES
± 20
I
C
Continuous 50
I
C PULSE
1ms 100
Collector Power Dissipation P
C
1 device 200 W
Repetitive Peak Reverse Voltage V
RRM
600 V
Average Forward Current I
F(AV)
1
Surge Current I
FSM
10ms 50
Operating Junction Temperature Tj+150
Storage Temperature T
Stg
-40 ∼ +125
Isolation Voltage V
ISO
A.C. 1min. 2500 V
Mounting Screw Torque *11.7 Nm
Note: *1:Recommendable Value; 1.3 ∼ 1.7 Nm (M4)
Collector Current
V
V
A
V
A
A
°C
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nn Electrical Characteristics( Tj=25°C )
Items Symbols Test Conditions Min. Max. Units
Zero Gate Voltage Collector Current I
CES
V
GE
=0V V
CE
=600V 1.0 mA
Gate-Emitter Leackage Current I
GES
V
CE
=0V V
GE
=± 20V 20 µA
Gate-Emitter Threshold Voltage V
GE(th)
V
GE
=20V I
C
=50mA 4.5 7.5
Collector-Emitter Saturation Voltage V
CE(sat)
V
GE
=15V I
C
=50A 2.9
Input capacitance C
ies
f=1MHz, V
GE
=0V,
V
CE
=10V 3300 (typ.) pF
t
on
V
CC
=300V 1.2
t
r
I
C
=50A 0.6
t
off
V
GE
=±15V 1.0
t
f
R
G
=51Ω0.35
Diode Forward On-Voltage V
F
I
F
=50A V
GE
=0V 3.1 V
Reverse Recovery Time t
rr
I
F
=50A 350 ns
Forward Voltage V
FM
I
F
= 50A 1.55 V
Reverse Current I
RRM
V
R
=800V 1.0 mA
Zero Gate Voltage Collector Current I
CES
V
GE
=0V V
CE
=600V 1.0 mA
Gate-Emitter Leackage Current I
GES
V
CE
=0V V
GE
=± 20V 100 nA
Collector-Emitter Saturation Voltage V
CE(sat)
V
GE
=15V I
C
=50A 2.8 V
t
on
V
CC
=300V 0.8
t
r
I
C
=50A 0.6
t
off
V
GE
=±15V 1.0
t
f
R
G
=51Ω0.35
Reverse Current I
RRM
V
R
=600V 1.0 mA
Reverse Recovery Time t
rr
600 ns
nn Thermal Characteristics
Items Symbols Test Conditions Min. Max. Units
Inverter IGBT 0.63
Inverter FRD 1.60
Brake IGBT 0.63 °C/W
Converter Diode 2.10
Contact Thermal Resistance R
th(c-f)
With Thermal Compound 0.05 (typ.)
Turn-on Time
Turn-on Time
Turn-off Time
Turn-off Time
V
µs
µs
Rth(j-c)
Thermal Resistance (1 device)
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0 20 40 60 80
10
100
1000
tf
tr
toff
ton
Switching time vs. Collector current
VCC=300V, RG=51W, VGE=±15V, Tj=25°C
Switching time : t on , tr , toff , tf [nsec]
Collector current : IC [A]
0 1 2 3 4 5
0
25
50
75
100
125
10V
VGE=20V,15V, 12V,
Collector-Emitter voltage : VCE [V]
Collector current : I C [A]
8V
Collector current vs. Collector-Emitter voltage
Tj=125°C
012345
0
25
50
75
100
125
Collector current vs. Collector-Emitter voltage
Tj=25°C
Collector current : I C [A]
Collector-Emitter voltage : VCE [V]
8V
10V
VGE=20V,15V,12V,
0 5 10 15 20 25
0
2
4
6
8
10
Collector-Emitter vs. Gate-Emitter voltage
Tj=25°C
25A
50A
100A
IC=
Collector-Emitter voltage : V
CE
[V]
Gate-Emitter voltage : VGE [V]
0 5 10 15 20 25
0
2
4
6
8
10
Collector-Emitter vs. Gate-Emitter voltage
Tj=125°C
25A
50A
100A
IC=
Collector-Emitter voltage : V CE [V]
Gate-Emitter voltage : VGE [V]
0 20 40 60 80
10
100
1000
Switching time vs. Collector current
VCC=300V, RG=51Ω, VGE=±15V, Tj=125°C
tf
tr
ton
toff
Switching time : t on , tr , toff , tf [nsec]
Collector current : IC [A]
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0,001 0,01 0,1 1
0,1
1
FRD
IGBT
Converter Diode
Transient thermal resistance
Thermal resistance : R th(j-c) [°C/W]
Pulse width : PW [sec]
0 50 100 150
0
100
200
300
400
500
400V
300V
VCC=200V
0
5
10
15
20
25
Dynamic input characteristics
Tj=25°C
Collector-Emitter voltage : V CE [V]
Gate charge : QG [nC]
10 100
10
100
1000
tf
tr
toff
ton
Switching time vs. RG
VCC=300V, IC=30A, VGE=±15V, Tj=25°C
Switching time : t on , tr , toff , tf [nsec]
Gate resistance : RG [Ω]
0 1 2 3 4
0
10
20
30
40
50
60
70
Tj=125°C 25°C
FRD
Forward current vs. Forward voltage
VGE=OV
Forward current : I
F
[A]
Forward voltage : VF [V]
0 10 20 30 40 50
1
10
100
Irr 25°C
trr 25°C
trr 125°C
Irr 125°C
Reverse recovery characteristics
trr , Irr vs. IF
Reverse recovery current : I rr [A]
Reverse recovery time : t rr [nsec]
Forward current : IF [A]
0 100 200 300 400 500 600
0
50
100
150
200
250
300
RBSOA (Repetitive pulse)
SCSOA
(non-repetitive pulse)
Reversed biased safe operating area
+VGE=15V, -VGE<15V, Tj<125°C, RG>82Ω
Collector current : I C [A]
Collector-Emitter voltage : VCE [V]
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0,0 0,5 1,0 1,5 2,0
0
10
20
30
40
50
60
Converter Diode
Forward current vs. Forward voltage
VGE=OV
Tj=125°C 25°C
Forward current : I F [A]
Forward voltage : VF [V]
0 5 10 15 20 25 30 35
0,1
1
10
Cres
Coes
Cies
Capacitance vs. Collector-Emitter voltage
Tj=25°C
Capacitance : C ies , Coes , C res [nF]
Collector-Emitter Voltage : VCE [V]
0 20 40 60 80
0
1
2
3
4
5
Err 25°C
Err 125°C
Switching loss vs. Collector current
VCC=300V, RG=51Ω, VGE=±15V
Switching loss : E
on
, E
off
, E
rr
[mJ/cycle]
Collector Current : IC [A]
Eon 25°C
Eon 125°C
Eoff 25°C
Eoff 125°C
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0 20 40 60 80
10
100
1000
tf
tr
toff
ton
Switching time vs. Collector current
VCC=300V, RG=51W, VGE=±15V, Tj=25°C
Switching time : t on , tr , toff , tf [nsec]
Collector current : IC [A]
0 1 2 3 4 5
0
25
50
75
100
125
10V
VGE=20V,15V, 12V,
Collector-Emitter voltage : VCE [V]
Collector current : I C [A]
8V
Collector current vs. Collector-Emitter voltage
Tj=125°C
012345
0
25
50
75
100
125
Collector current vs. Collector-Emitter voltage
Tj=25°C
Collector current : I C [A]
Collector-Emitter voltage : VCE [V]
8V
10V
VGE=20V,15V,12V,
0 5 10 15 20 25
0
2
4
6
8
10
Collector-Emitter vs. Gate-Emitter voltage
Tj=25°C
25A
50A
100A
IC=
Collector-Emitter voltage : V
CE
[V]
Gate-Emitter voltage : VGE [V]
0 5 10 15 20 25
0
2
4
6
8
10
Collector-Emitter vs. Gate-Emitter voltage
Tj=125°C
25A
50A
100A
IC=
Collector-Emitter voltage : V CE [V]
Gate-Emitter voltage : VGE [V]
0 20 40 60 80
10
100
1000
Switching time vs. Collector current
VCC=300V, RG=51Ω, VGE=±15V, Tj=125°C
tf
tr
ton
toff
Switching time : t on , tr , toff , tf [nsec]
Collector current : IC [A]
Brake Chopper IGBT
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0 50 100 150 200 250 300
0
100
200
300
400
500
400V
300V
VCC=200V
0
5
10
15
20
25
Dynamic input characteristics
Tj=25°C
Collector-Emitter voltage : V CE [V]
Gate charge : QG [nC]
10 100
10
100
1000
tf
tr
toff
ton
Switching time vs. RG
VCC=300V, IC=50A, VGE=±15V, Tj=25°C
Switching time : t on , tr , toff , tf [nsec]
Gate resistance : RG [Ω]
0 100 200 300 400 500 600
0
100
200
300
400
500
RBSOA (Repetitive pulse)
SCSOA
(non-repetitive pulse)
Reversed biased safe operating area
+VGE=15V, -VGE<15V, Tj<125°C, RG>51Ω
Collector current : I C [A]
Collector-Emitter voltage : VCE [V]
0 20 40 60 80
0
1
2
3
4
5
Err25C
Err125C
Eon25C
Eon125C
Eoff25C
Eoff125C
Switching loss vs. Collector current
VCC=300V, RG=51Ω, VGE=+15V
Switching loss : E on, Eoff, Err[mJ/cycle]
Collector-Emitter Current : IC[A]
0 5 10 15 20 25 30 35
0,1
1
10
Cres
Coes
Cies
Capacitance vs. Collector-Emitter Voltage
Tj=25C
Capacitance : C ies, Coes,Cres[nF]
Collector-Emitter Voltage : VCE[V]
Brake Chopper IGBT
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P.O. Box 702708 - Dallas, TX 75370 Phone (972) 233-1589 Fax (972) 233-0481 - www.collmer.com
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