MITSUBISHI TRANSISTOR MODULES QM100DY-2HBK HIGH POWER SWITCHING USE INSULATED TYPE QM100DY-2HBK * * * * * IC Collector current ........................ 100A VCEX Collector-emitter voltage ......... 1000V hFE DC current gain............................. 750 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION Inverters, Servo drives, DC motor controllers, NC equipment, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 108 4-6.5 930.25 17 8 21.5 17 3 E1 B1 1.8 Tab#110, t=0.5 9.5 8 17 25 E2 LABEL 37 3 62 6 15 25 B1X 8 16 15.3 C2E1 7 8 C1 10.5 6 B1 E1 9 B1X C1 14 3-M6 B2 E2 480.25 30 E2 30 B2X C2E1 E2 B2 B2X Feb.1999 MITSUBISHI TRANSISTOR MODULES QM100DY-2HBK HIGH POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol (Tj=25C, unless otherwise noted) Ratings Unit VCEX (SUS) Collector-emitter voltage IC=1A, VEB=2V 1200 V VCEX Collector-emitter voltage VEB=2V 1200 V VCBO Collector-base voltage Emitter open 1200 V VEBO Emitter-base voltage Collector open IC Collector current -IC PC Parameter Conditions 7 V DC 100 A Collector reverse current DC (forward diode current) 100 A Collector dissipation TC=25C 800 W IB Base current DC 5 A -ICSM Surge collector reverse current (forward diode current) Peak value of one cycle of 60Hz (half wave) 1000 A Tj Junction temperature -40~+150 C Tstg Storage temperature -40~+125 C Viso Isolation voltage Charged part to case, AC for 1 minute Main terminal screw M6 -- Mounting torque Mounting screw M6 -- Typical value Weight ELECTRICAL CHARACTERISTICS 2500 V 1.96~2.94 N*m 20~30 kg*cm 1.96~2.94 N*m 20~30 kg*cm 470 g (Tj=25C, unless otherwise noted) Limits Symbol Test conditions Parameter Min. Typ. Max. Unit ICEX Collector cutoff current VCE=1000V, VEB=2V -- -- 4.0 mA ICBO Collector cutoff current VCB=1000V, Emitter open -- -- 4.0 mA IEBO Emitter cutoff current VEB=7V -- -- 100 mA VCE (sat) Collector-emitter saturation voltage -- -- 4.0 V VBE (sat) Base-emitter saturation voltage -- -- 4.0 V -VCEO Collector-emitter reverse voltage -IC=100A (diode forward voltage) -- -- 1.8 V hFE DC current gain IC=100A, VCE=4V 750 -- -- -- -- -- 2.5 s Switching time VCC=600V, IC=100A, IB1=0.2A, -IB2=2A -- -- 15 s -- -- 3.0 s Transistor part (per 1/2 module) -- -- 0.155 C/ W Diode part (per 1/2 module) -- -- 0.65 C/ W Conductive grease applied (per 1/2 module) -- -- 0.075 C/ W IC=100A, IB=130mA ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM100DY-2HBK HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) 200 DC CURRENT GAIN hFE 160 A 00m IB=4 A m 0 0 IB=2 mA 130 IB= mA IB=40 120 80 IB=20mA 40 0 0 1 2 3 4 COLLECTOR-EMITTER VOLTAGE 10 0 7 5 4 3 2 VCE=4.0V Tj=25C 3.4 3.8 4.2 BASE-EMITTER VOLTAGE 4.6 VCE=4.0V 10 3 7 5 4 3 2 10 1 7 5 4 3 2 2 3 4 10 0 7 5 4 3 2 10 -1 VCE(sat) 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 COLLECTOR CURRENT IC (A) SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) 2 IC=130A 3 IC=100A IC=50A 1 Tj=25C Tj=125C 3 4 5 7 10 -2 2 3 4 5 7 10 -1 2 3 4 5 7 10 0 2 3 BASE CURRENT IB (A) ton, ts, tf (s) 4 SWITCHING TIME COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 2 3 4 5 7 10 2 IB=130mA Tj=25C Tj=125C VBE(sat) VBE (V) 5 0 4 5 7 10 1 SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) 2 VCE=10V COLLECTOR CURRENT IC (A) VCE (sat), VBE (sat) (V) BASE CURRENT IB (A) 3 2 3.0 Tj=25C Tj=125C VCE (V) COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) 10 -1 7 5 4 3 2.6 10 4 7 5 4 3 2 10 2 5 SATURATION VOLTAGE COLLECTOR CURRENT IC (A) Tj=25C ts 10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 1 tf ton VCC=600V IB1=200mA IB2=-2A Tj=25C Tj=125C 2 3 4 5 7 10 2 2 3 4 5 7 10 3 COLLECTOR CURRENT IC (A) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM100DY-2HBK HIGH POWER SWITCHING USE INSULATED TYPE SWITCHING TIME VS. BASE CURRENT (TYPICAL) REVERSE BIAS SAFE OPERATING AREA 200 COLLECTOR CURRENT IC (A) SWITCHING TIME ts, tf (s) 3 2 ts 10 1 7 5 4 3 2 10 0 7 5 4 3 tf VCC=600V IB1=200mA IC=100A Tj=25C Tj=125C 3 4 5 7 10 0 2 3 4 5 7 10 1 Tj=125C -IB2=2A 160 120 80 40 0 2 3 BASE REVERSE CURRENT -IB2 (A) 600 0.20 0.15 0.10 0.05 0 10 -3 2 3 4 5 710 -2 2 3 4 5 7 10 -1 2 3 4 5 7 10 0 TIME (s) 1000 VCE (V) SECOND BREAKDOWN AREA DERATING FACTOR (%) 90 80 70 60 50 COLLECTOR DISSIPATION 40 30 20 10 0 0 VCE (V) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 4 5 710 1 2 3 4 5 7 0.25 800 DERATING FACTOR OF F. B. S. O. A. 20 40 60 80 100 120 140 160 CASE TEMPERATURE COLLECTOR REVERSE CURRENT -IC (A) COLLECTOR CURRENT IC (A) s 200 s 1m 10 1 7 5 3 2 TC=25C NON-REPETITIVE 10 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 COLLECTOR-EMITTER VOLTAGE Zth (j-c) (C/ W) 400 100 tw=50s 100s DC 10 2 7 5 3 2 200 COLLECTOR-EMITTER VOLTAGE FORWARD BIAS SAFE OPERATING AREA 10 3 7 5 3 2 0 10 2 7 5 4 3 2 TC (C) REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL) Tj=25C Tj=125C 10 1 7 5 4 3 2 10 0 0 0.4 0.8 1.2 1.6 2.0 COLLECTOR-EMITTER REVERSE VOLTAGE -VCEO (V) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM100DY-2HBK HIGH POWER SWITCHING USE INSULATED TYPE REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 800 600 400 200 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 CONDUCTION TIME (CYCLES AT 60Hz) 10 3 7 VCC=600V 5 IB1=0.2A 3 -IB2=2.0A Tj=25C 2 Tj=125C 2 10 7 5 3 2 10 2 Irr 10 1 trr (s) 1000 Irr (A), Qrr (c) SURGE COLLECTOR REVERSE CURRENT -ICSM (A) RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) Qrr 10 1 10 0 7 5 trr 3 2 10 0 10 -1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 FORWARD CURRENT IF (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE ) 10 0 2 3 4 5 7 10 1 2 3 4 5 7 1.0 Zth (j-c) (C/ W) 0.8 0.6 0.4 0.2 0 10 -3 2 3 4 5 710 -2 2 3 4 5 7 10 -1 2 3 4 5 7 10 0 TIME (s) Feb.1999