2016-04-01 2
Version 1.5 SFH 2400 FA
Maximum Ratings (TA = 25 °C)
Characteristics (TA = 25 °C, λ = 870 nm)
Parameter Symbol Values Unit
Operating and storage temperature range Top; Tstg -40 ... 100 °C
Reverse voltage VR20 V
Reverse voltage
(t < 2 min)
VR50 V
Total Power dissipation Ptot 120 mW
ESD withstand voltage
(acc. to ANSI/ ESDA/ JEDEC JS-001 - HBM)
VESD 2000 V
Thermal resistance for mounting on pcb RthJA 450 K/W
Parameter Symbol Values Unit
Photocurrent
(VR = 5 V, λ = 870 nm, Ee = 1 mW/cm2)
(typ (min)) IP6.2 (≥ 3.6) µA
Wavelength of max. sensitivity (typ) λS max 900 nm
Spectral range of sensitivity (typ) λ10% (typ) 750
... 1100
nm
Radiant sensitive area (typ) A 1.00 mm2
Dimensions of radiant sensitive area (typ) L x W 1 x 1 mm x
mm
Half angle (typ) ϕ ± 60 °
Dark current
(VR = 20 V)
(typ (max)) IR1 (≤ 5) nA
Spectral sensitivity of the chip
(λ = 870 nm)
(typ) Sλ typ 0.65 A / W
Quantum yield of the chip
(λ = 870 nm)
(typ) η 0.93 Electro
ns
/Photon
Open-circuit voltage
(Ee = 1 mW/cm2, λ = 870 nm)
(typ (min)) VO320 mV
Short-circuit current
(Ee = 1 mW/cm2, λ = 870 nm)
(typ) ISC 6 µA
Rise and fall time
(VR = 20 V, RL = 50 Ω, λ = 850 nm)
(typ) tr, tf0.005 µs
Forward voltage
(IF = 80 mA, E = 0)
(typ) VF1.3 V
Capacitance
(VR = 0 V, f = 1 MHz, E = 0)
(typ) C011 pF