IRF5210S/L
HEXFET® Power MOSFET
PD - 91405C
lAdvanced Process Technology
lSurface Mount (IRF5210S)
lLow-profile through-hole (IRF5210L)
l175°C Operating Temperature
lFast Switching
lP-Channel
lFully Avalanche Rated
5/13/98
S
D
G
Absolute Maximum Ratings
Fifth Generation HEXFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for
use in a wide variety of applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the highest
power capability and the lowest possible on-resistance in
any existing surface mount package. The D2Pak is suitable
for high current applications because of its low internal
connection resistance and can dissipate up to 2.0W in a
typical surface mount application.
The through-hole version (IRF5210L) is available for low-
profile applications.
Description
VDSS = -100V
RDS(on) = 0.06 Ω
ID = -40A
2
D P a k
TO-262
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 0.75
RθJA Junction-to-Ambient ( PCB Mounted,steady-state)** – – – 4 0
Thermal Resistance
°C/W
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ -10V-40
ID @ TC = 100°C Continuous Drain Current, VGS @ -10V-29 A
IDM Pulsed Drain Current -140
PD @TA = 25°C Power Dissipation 3.8 W
PD @TC = 25°C Power Dissipation 200 W
Linear Derating Factor 1.3 W/°C
VGS Gate-to-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy 780 mJ
IAR Avalanche Current-21 A
EAR Repetitive Avalanche Energy20 mJ
dv/dt Peak Diode Recovery dv/dt -5.0 V/ns
TJOperating Junction and -55 to + 175
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C
IRF5210S/L
Starting TJ = 25°C, L = 3.1mH
RG = 25Ω, IAS = -21A. (See Figure 12)
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Notes:
** When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
ISD ≤ -21A, di/dt ≤ -480A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Uses IRF5210 data and test conditions
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -100 ––– ––– V VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient ––– -0.11 ––– V/°C Reference to 25°C, ID = -1mA
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.06 ΩVGS = -10V, ID = -24A
VGS(th) Gate Threshold Voltage -2.0 ––– -4.0 V VDS = VGS, I D = -250µA
gfs Forward Transconductance 10 ––– ––– S VDS = -50V, ID = -21A
––– ––– -25 µA VDS = -100V, VGS = 0V
––– ––– -250 VDS = -80V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -20V
QgTotal Gate Charge ––– ––– 180 ID = -21A
Qgs Gate-to-Source Charge ––– ––– 25 nC VDS = -80V
Qgd Gate-to-Drain ("Miller") Charge ––– ––– 97 VGS = -10V, See Fig. 6 and 13
td(on) Turn-On Delay Time ––– 17 ––– VDD = -50V
trRise Time ––– 86 ––– ID = -21A
td(off) Turn-Off Delay Time ––– 79 ––– RG = 2.5Ω
tfFall Time ––– 81 ––– RD = 2.4Ω, See Fig. 10
Between lead,
––– ––– and center of die contact
Ciss Input Capacitance ––– 2700 ––– VGS = 0V
Coss Output Capacitance ––– 790 ––– pF VDS = -25V
Crss Reverse Transfer Capacitance ––– 450 ––– ƒ = 1.0MHz, See Fig. 5
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
IGSS
ns
IDSS Drain-to-Source Leakage Current
nH
7.5
LSInternal Source Inductance
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) ––– ––– showing the
ISM Pulsed Source Current integral reverse
(Body Diode)
––– ––– p-n junction diode.
VSD Diode Forward Voltage ––– ––– -1.6 V TJ = 25°C, IS = -24A, VGS = 0V
trr Reverse Recovery Time ––– 170 260 n s TJ = 25°C, IF = -21A
Qrr Reverse Recovery Charge ––– 1.2 1.8 µC di/dt = -100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
A
S
D
G
-40
-140
IRF5210S/L
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
1
10
100
1000
0.1 1 10 100
D
DS
A
-I , Drain-to-Sou rc e Curre nt (A )
-V , D rain-to-Source Voltage (V)
VGS
T OP - 15 V
- 10V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
B O TTO M - 4. 5V
-4 .5 V
40µ s PU LSE WIDTH
T = 2 5°C
c
1
10
100
1000
0.1 1 10 100
D
DS
A
-I , Drain-to-Source Current (A )
-V , D r a in-t o-So u r ce Vo lta
g
e
(
V
)
V GS
T OP - 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
-4.5V
40
µ
s PU LSE WIDTH
T = 175°C
C
1
10
100
1000
45678910
T = 25°C
J
GS
D
A
-I , D rain-to-S ource C urrent (A)
-V , Ga te -to-S ource Volta
g
e (V)
T = 175°C
V = -50V
40µs PULSE WIDTH
DS
J
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
J
T , J u nc tion T em p eratur e (°C )
R , D ra in-to -S o urc e On R e s ista nc e
DS(on)
(Normalized)
A
V = -1 0 V
GS
I = -3 5 A
D
IRF5210S/L
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0
1000
2000
3000
4000
5000
6000
1 10 100
C , Capacitance (pF)
A
DS
-V , D r ain -to -So u rc e Vo lta
g
e
(
V
)
V = 0V, f = 1 M Hz
C = C + C , C S HO RT E D
C = C
C = C + C
GS
is s gs gd ds
rss gd
os s ds g d
C
iss
C
oss
C
rss
0
4
8
12
16
20
0 40 80 120 160 200
G
GS
A
-V , Gate -to -So u rc e V o lta g e (V)
Q , T o ta l Ga te Ch a r
g
e
(
nC
)
V = -8 0 V
V = -5 0 V
V = -2 0 V
DS
DS
DS
FO R TES T CIR CUIT
S E E F IG U R E 1 3
I = -2 1A
D
1
10
100
1000
0.4 0.8 1.2 1.6 2.0 2.4
T = 25°C
J
V = 0 V
GS
SD
SD
A
-I , Reverse D rain Current (A )
-V , S ourc e-to-Drain V oltage (V )
T = 175°C
J
1
10
100
1000
1 10 100 1000
O P ER A T IO N IN T H IS A R E A L IMITED
B Y R
DS(on)
10ms
A
-I , D ra in C urre nt (A )
-V , D r a in- to -S o u rc e V o lta
g
e
(
V
)
DS
D
10µs
100µs
1ms
T = 25 °C
T = 17 5 °C
Sin
g
le P u ls e
C
J
IRF5210S/L
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
VDS
-10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
VDD
RGD.U.T.
+
-
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
25 50 75 100 125 150 175
0
10
20
30
40
50
T , Case Temperature ( C)
-I , Drain Current (A)
°
C
D
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
1 2
JDM thJC C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
IRF5210S/L
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Q
G
Q
GS
Q
GD
V
G
Charge
-10V
D.U.T. V
DS
I
D
I
G
-3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tpV
(
BR
)
DSS
I
AS
R
G
IAS
0.01
Ω
t
p
D.U.T
L
V
DS
VDD
DRIVER A
15V
-20V
0
400
800
1200
1600
2000
25 50 75 100 125 150 175
J
E , S in gle P ulse Avalanc he E n ergy (m J )
AS
A
Startin
g
T , Junction Tem perature
(
°C
)
I
T O P -8 .6A
-1 5A
B OT TOM -21 A
D
IRF5210S/L
Peak Diode Recovery dv/dt Test Circuit
P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current Body Diode Forward
Current
VGS=10V
VDD
ISD
Driver Gate Drive
D.U.T. ISD Waveform
D.U.T. VDS Waveform
Inductor Curent
D = P.W.
Period
+
-
+
+
+
-
-
-
RGVDD
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T*Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
* Reverse Polarity of D.U.T for P-Channel
VGS
[ ]
[ ]
*** VGS = 5.0V for Logic Level and 3V Drive Devices
[ ] ***
Fig 14. For P-Channel HEXFETS
IRF5210S/L
D2Pak Package Outline
D2Pak
Part Marking Information
10.16 (.400)
R EF.
6.47 (.255 )
6.18 (.243 )
2.61 (.1 0 3 )
2.32 (.0 9 1 )
8.89 (.350)
REF.
- B -
1.32 (.052)
1.22 (.048)
2.79 (.110)
2.29 (.090)
1.39 (.055)
1.14 (.045)
5 .28 (.208)
4 .78 (.188)
4.69 (.185)
4.20 (.165)
10.54 (.415)
10.29 (.405)
- A -
2
1 3 15 .49 (.6 10)
14 .7 3 (.5 80)
3X 0.93 (.037)
0.69 (.027)
5 .08 (.200)
3X 1.40 (.055)
1.14 (.045)
1.78 (.070)
1.27 (.050)
1.40 (.055)
MAX.
NOTES:
1 DIMENSIONS AFTER SOLDER DIP.
2 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
3 CONTROLLING DIM ENSION : INCH.
4 HEATSINK & LEAD DIM ENSIONS DO NOT INCLUDE BURRS.
0.55 (.022)
0.46 (.018)
0.2 5 ( .0 10) M B A M MINIMUM RECOMMENDED F OOTP RINT
11.43 (.450)
8.89 (.3 5 0 )
17 .78 (.700)
3.81 (.150)
2.08 (.082)
2X
LEAD ASSIGNMENTS
1 - GATE
2 - DRA IN
3 - SOUR CE
2.54 (.100)
2X
PAR T N UM BER
INTERNATIONAL
RE CTIFIER
LO G O DATE CODE
(YYW W )
YY = YEAR
WW = WEEK
A S SEMBLY
LOT C O DE
F530S
9B 1M
9246
A
IRF5210S/L
Package Outline
TO-262 Outline
TO-262
Part Marking Information
IRF5210S/L
Tape & Reel Information
D2Pak
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/ Data and specifications subject to change without notice. 5/98
3
4
4
TRR
FEED DIRECTION
1.85 (.07 3)
1.65 (.06 5)
1.60 (.063)
1.50 (.059)
4.10 (.16 1)
3.90 (.15 3)
TRL
FE ED D IRE CTIO N
10 .9 0 (.429)
10 .7 0 (.421) 16.10 (.634)
15.90 (.626)
1.75 (.069)
1.25 (.049)
11.60 (.457)
11.40 (.449) 15.42 (.609)
15.22 (.601)
4.72 (.136)
4.52 (.178)
24.30 (.957)
23.90 (.941)
0.3 68 (.0145)
0.3 42 (.0135)
1 .60 (.063)
1 .50 (.059)
13.50 (.532)
12.80 (.504)
330.00
(14.173)
MAX.
2 7.4 0 (1.079)
2 3.9 0 (.941)
60.00 (2.362)
MIN.
3 0.40 (1.197)
M A X .
26.4 0 (1.0 39 )
24 .40 ( .961 )
NOT ES :
1. CO M F O R M S TO E IA -418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIM ENSIO N MEASUR ED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
