VRRM = IF = 1700 V 75 A Diode-Die 5SLX12G1700 Die size: 11.9 x 6.1 mm * * * Doc. No. 5SYA1656-02 Apr. 02 Fast Recovery, Low losses Soft reverse recovery High ruggedness Maximum Rated Values Parameter Maximum Reverse Voltage (Tj = 25C, unless specified otherwise) Symbol Conditions Values Unit VRRM 1700 V DC Forward Current IF 75 A Maximum Forward Current IFM 150 A Operating Temperature Tj -40 .. +150 C Characteristic Values Parameter Forward Voltage Reverse leakage current Limited by Tjmax (Tj = 25C, unless specified otherwise) Symbol VF IR Conditions IF = 75 A VR = 1700 V min. typ. max. Unit Tj = 25 C 1.7 2.0 Tj = 125 C 2.05 Tj = 25 C Tj = 125 C 2.3 V V 100 A 1.5 mA Reverse recovery current Irrm IF = 75 A, VCC = 900 V, 66 A Reverse recovery charge Qrr di/dt = 800 A/s, L = 160 nH, 19 C Reverse recovery time trr Tj = 125 C, Inductive load, 600 ns Switch : 5SMX12K1700 10 mJ Reverse recovery energy Erec ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. 5SLX12G1700 Typical Performance Graphs 18 90 VCC = 900 V di/dt = 800 A/s Tvj = 125 C L = 160 nH 16 125 14 60 10 25C 75 70 12 125C Erec [mJ] IF [A] 100 80 -40C 50 50 Irr 8 40 6 30 Erec 4 Qrr [C], Irr [A] 150 20 25 2 0 Fig. 1 0.5 1.0 1.5 VF [V] 2.0 2.5 Typical diode forward characteristics 75 50 25 0 12 -200 10 -400 IR 0 -600 -25 VR -50 25 50 75 IF [A] 100 125 140 VCC = 900 V IF = 75 A Tvj = 125 C L = 160 nH 120 100 8 80 Erec 6 -800 4 -1000 2 0 150 Typical reverse recovery characteristics vs forward current 14 200 VCC = 900 V IF = 75 A di/dt = 800 A/s Tvj = 125 C L = 160 nH 0 Fig. 2 VR [V] 100 IR [A] 3.0 Erec [mJ] 0.0 60 Qrr [C], Irr [A] 0 10 Qrr 40 Irr 20 Qrr -75 0 Fig. 3 400 800 time [ns] 1200 -1200 1600 Typical diode reverse recovery behaviour 0 0 Fig. 4 400 800 1200 di/dt [A/s] 1600 0 2000 Typical reverse recovery characteristics vs di/dt ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1656-02 Apr. 02 page 2 of 3 5SLX12G1700 Mechanical Characteristics Parameter Dimensions Unit Overall die LxW 11.9 x 6.1 mm Exposed Front metal LxW 10.3 x 4.5 mm 370 15 m 4 m 1.2 m Thickness Metallization 1) Front Back 1) AISi1 AI / Ti / Ni / Ag For assembly instructions refer to : IGBT and Diode chips from ABB Switzerland Ltd, Semiconductors, Doc. No. 5SYA2033-01 April 02. Outline Drawing Note : All dimensions are shown in mm ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone +41 (0)58 586 1419 Fax +41 (0)58 586 1306 Email abbsem@ch.abb.com Internet www.abbsem.com Doc. No. 5SYA1656-02 Apr. 02