APTGT225SK170G
APTGT225SK170G – Rev 1 July, 2006
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Absolute maximum ratings
Symbol Parameter Max ratings Unit
VCES Collector - Emitter Breakdown Voltage 1700 V
TC = 25°C 340
IC Continuous Collector Current TC = 80°C 225
ICM Pulsed Collector Current TC = 25°C 450
A
VGE Gate – Emitter Voltage ±20 V
PD Maximum Power Dissipation TC = 25°C 1250 W
RBSOA Reverse Bias Safe Operating Area Tj = 125°C 450A @ 1600V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
Q1
G1
0/ VB US
OUT
E1
CR2
VBUS
VBUS OUT
0/VBUS
E1
G1
VCES = 1700V
IC = 225A @ Tc = 80°C
Applicatio
n
• AC and DC motor control
• Switched Mode Power Supplies
Features
• Trench + Field Stop IGBT® Technology
- Low voltage drop
- Low tail current
- Switching freque ncy up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
- Symmetrical design
- M5 power connectors
• High level of integration
Benefits
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• Low profile
• RoHS Compliant
Buck chopper
Trench + Field Stop IGBT®
Power Modul
e
APTGT225SK170G
APTGT225SK170G – Rev 1 July, 2006
www.microsemi
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com 2 - 5
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
ICES Zero Gate Voltage Collector Current VGE = 0V, VCE = 1700V 500 µA
Tj = 25°C 2.0 2.4
VCE(sat) Collector Emitter Saturation Voltage VGE = 15V
IC = 225A Tj = 125°C 2.4 V
VGE(th) Gate Threshold Voltage VGE = VCE , IC = 4mA 5.0 5.8 6.5 V
IGES Gate – Emitter Leakage Current VGE = 20V, VCE = 0V 600 nA
Dynamic Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Cies Input Capacitance 20
Coes Output Capacitance 0.8
Cres Reverse Transfer Capacitance
VGE = 0V
VCE = 25V
f = 1MHz 0.66
nF
Td(on) Tur n-o n Delay Ti me 370
Tr Rise Time 40
Td(off) Turn-off Delay Time 650
Tf Fall Time
Inductive Switching (25°C)
VGE = 15V
VBus = 900V
IC = 225A
RG = 3.3Ω 180
ns
Td(on) Turn-on Delay Time 400
Tr Rise Time 50
Td(off) Turn-off Delay Time 800
Tf Fall Time
Inductive Switching (125°C)
VGE = 15V
VBus = 900V
IC = 225A
RG = 3.3Ω 300
ns
Eon Tur n-on Switchi ng E nergy Tj = 125°C 72
Eoff Turn-off Switching Energy
VGE = 15V
VBus = 900V
IC = 225A
RG = 3.3Ω Tj = 125°C 70.5
mJ
Chopper diode ratings and characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
VRRM Maximum Peak Repetitive Reverse Voltage 1700 V
Tj = 25°C 500
IRM Maximum Reverse Leakage Current VR=1700V Tj = 125°C 750 µA
IF DC Forward Current Tc = 80°C 225 A
Tj = 25°C 1.8 2.2
VF Diode Forward Voltage IF = 225A Tj = 125°C 1.9 V
Tj = 25°C 385
trr Reverse Recovery Time Tj = 125°C 490 ns
Tj = 25°C 57
Qrr Reverse Recovery Charge Tj = 125°C 93 µC
Tj = 25°C 26
Er Reverse Recovery Energy
IF = 225A
VR = 900V
di/dt =2400A/µs
Tj = 125°C 52 mJ
APTGT225SK170G
APTGT225SK170G – Rev 1 July, 2006
www.microsemi
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com 3 - 5
Thermal and package characteristics
Symbol Characteristic Min Typ Max Unit
IGBT 0.1
RthJC Junction to Case Thermal Resistance Diode 0.18
°C/W
VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 3500 V
TJ Operating junction temperature range -40 150
TSTG Storage Temperature Range -40 125
TC Operating Case Temperature -40 100
°C
To heatsink M6 3 5
Torque Mounting torque For terminals M5 2 3.5 N.m
Wt Package Weight 280 g
SP6 Package outline (dimensions in mm)
See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com
APTGT225SK170G
APTGT225SK170G – Rev 1 July, 2006
www.microsemi
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Typical Performance Curve
Output Characteristics (VGE=15V)
TJ=25°C
TJ=125°C
0
50
100
150
200
250
300
350
400
450
01234
VCE (V)
IC (A)
Output Characteristics
VGE=15V
VGE=13V
VGE=20V
VGE=9V
0
50
100
150
200
250
300
350
400
450
012345
VCE (V)
IC (A)
TJ = 125°C
Transfert Characteristics
TJ=25°C
TJ=125°C
TJ=125°C
0
50
100
150
200
250
300
350
400
450
5 6 7 8 9 10 11 12 13
VGE (V)
IC (A)
Energy losses vs Collector Current
Eon
Eoff
Er
0
30
60
90
120
150
180
0 100 200 300 400 500
IC (A)
E (mJ)
VCE = 900V
VGE = 15V
RG = 3.3Ω
TJ = 125°C
Eon
Eoff
Er
0
30
60
90
120
150
180
2 4 6 8 10 12 14 16 18 20
Gate Resistance (ohms)
E (mJ)
VCE = 900V
VGE =15V
IC = 225A
TJ = 125°C
Switching Energy Losses vs Gate Resistanc
e
Reverse Bias Safe Operating Area
0
100
200
300
400
500
0 400 800 1200 1600 2000
VCE (V)
IC (A)
VGE=15V
TJ=125°C
R
G
=3.3Ω
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05 Single Pulse
0
0.02
0.04
0.06
0.08
0.1
0.12
0.00001 0.0001 0.001 0.01 0.1 1 10
rectangular Pulse Duration (Seconds)
Thermal Impedance (°C/W)
IGBT
APTGT225SK170G
APTGT225SK170G – Rev 1 July, 2006
www.microsemi
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com 5 - 5
Forward Characteristic of diode
TJ=25°C
TJ=125°C
TJ=125°C
0
50
100
150
200
250
300
350
400
450
00.511.522.53
VF (V)
IF (A)
hard
switching
ZCS
ZVS
0
5
10
15
20
0 60 120 180 240 300 360
IC (A)
Fmax, Operating Frequency (kHz)
VCE=900V
D= 50%
RG=3.3Ω
TJ=125°C
TC=75°C
Operating Frequency vs Collector Current
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05 Single Pulse
0
0.04
0.08
0.12
0.16
0.2
0.00001 0.0001 0.001 0.01 0.1 1 10
rectangular Pulse Duration (Seconds)
Thermal Impedance (°C/W)
Diode
M icros e mi re se rve s the rig ht to c ha nge , witho ut notice , the spe cificatio ns and i nfo rmatio n co nta ine d he rein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
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