APTGT225SK170G Buck chopper Trench + Field Stop IGBT(R) Power Module VCES = 1700V IC = 225A @ Tc = 80C Application * AC and DC motor control * Switched Mode Power Supplies VBUS Q1 G1 E1 Features * Trench + Field Stop IGBT(R) Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated * Kelvin emitter for easy drive * Very low stray inductance - Symmetrical design - M5 power connectors * High level of integration OUT CR2 0/VBUS VBUS 0/VBUS OUT E1 Benefits * Stable temperature behavior * Very rugged * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * Low profile * RoHS Compliant Symbol VCES Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation RBSOA Reverse Bias Safe Operating Area TC = 25C Max ratings 1700 340 225 450 20 1250 Tj = 125C 450A @ 1600V TC = 25C TC = 80C TC = 25C Unit V A V W July, 2006 Absolute maximum ratings These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-5 APTGT225SK170G - Rev 1 G1 APTGT225SK170G All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics Zero Gate Voltage Collector Current VCE(sat) Collector Emitter Saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate - Emitter Leakage Current VGE = 0V, VCE = 1700V Tj = 25C VGE = 15V IC = 225A Tj = 125C VGE = VCE , IC = 4mA VGE = 20V, VCE = 0V Dynamic Characteristics Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Test Conditions VGE = 0V VCE = 25V f = 1MHz Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Symbol Characteristic IRM Test Conditions Maximum Reverse Leakage Current DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Er Reverse Recovery Energy Typ 20 0.8 0.66 370 40 650 Max Unit 500 2.4 A 6.5 600 V nA Max Unit ns ns 300 72 mJ 70.5 Typ Max 1700 VR=1700V IF = 225A IF = 225A VR = 900V di/dt =2400A/s www.microsemi.com Unit V Tj = 25C Tj = 125C Tc = 80C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C V nF 180 400 50 800 Min Maximum Peak Repetitive Reverse Voltage IF 5.0 2.0 2.4 5.8 Min Chopper diode ratings and characteristics VRRM Typ Inductive Switching (25C) VGE = 15V VBus = 900V IC = 225A R G = 3.3 Inductive Switching (125C) VGE = 15V VBus = 900V IC = 225A R G = 3.3 VGE = 15V Tj = 125C VBus = 900V IC = 225A Tj = 125C R G = 3.3 Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Tf Min 500 750 225 1.8 1.9 385 490 57 93 26 52 A A 2.2 V ns C July, 2006 ICES Test Conditions mJ 2-5 APTGT225SK170G - Rev 1 Symbol Characteristic APTGT225SK170G Thermal and package characteristics Symbol Characteristic Min IGBT Diode RthJC Junction to Case Thermal Resistance VISOL TJ TSTG TC RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Torque Mounting torque Wt Package Weight To heatsink For terminals M6 M5 3500 -40 -40 -40 3 2 Typ Max 0.1 0.18 Unit C/W V 150 125 100 5 3.5 280 C N.m g See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com www.microsemi.com 3-5 APTGT225SK170G - Rev 1 July, 2006 SP6 Package outline (dimensions in mm) APTGT225SK170G Typical Performance Curve Output Characteristics (VGE =15V) Output Characteristics 450 450 VGE=20V 300 300 IC (A) IC (A) 350 TJ=25C 350 TJ=125C 250 200 VGE =13V 250 200 150 150 100 100 50 50 0 VGE =15V V GE=9V 0 0 1 2 V CE (V) 3 4 0 Transfert Characteristics 450 400 T J=25C 120 E (mJ) 250 T J=125C 200 2 3 VCE (V) VCE = 900V VGE = 15V RG = 3.3 T J = 125C 150 300 1 4 5 Energy losses vs Collector Current 180 350 IC (A) T J = 125C 400 400 Eon Eoff 90 Er 60 150 100 T J=125C 30 50 0 0 5 6 7 8 9 10 11 12 0 13 100 Switching Energy Losses vs Gate Resistance Eon 500 90 400 IC (A) E (mJ) 400 500 VCE = 900V VGE =15V IC = 225A T J = 125C 120 300 Reverse Bias Safe Operating Area 180 150 200 IC (A) VGE (V) Eoff 60 Er 300 200 VGE =15V TJ=125C RG=3.3 100 30 0 0 2 4 6 8 10 12 14 16 Gate Resistance (ohms) 18 0 20 400 800 1200 1600 2000 V CE (V) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.9 0.08 0.7 0.06 0.5 0.04 0.3 0.02 0.1 0.05 0 0.00001 July, 2006 IGBT 0.1 Single Pulse 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) www.microsemi.com 4-5 APTGT225SK170G - Rev 1 Thermal Impedance (C/W) 0.12 APTGT225SK170G Forward Characteristic of diode 450 15 VCE=900V D=50% RG =3.3 TJ=125C TC=75C ZVS 10 400 350 T J=25C 300 IF (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 20 ZCS 250 200 T J=125C 150 5 100 hard switching T J=125C 50 0 0 0 60 120 180 IC (A) 240 300 0 360 0.5 1 1.5 VF (V) 2 2.5 3 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (C/W) 0.2 0.16 Diode 0.9 0.7 0.12 0.5 0.08 0.04 0.3 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 5-5 APTGT225SK170G - Rev 1 July, 2006 rectangular Pulse Duration (Seconds)