DMN10H700S 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS(ON) ID TA = +25C 700m @ VGS = 10V 0.70A 900m @ VGS = 6.0V 0.62A BVDSS PRODUCT INFORMATION ADVANCED NEW Features and Benefits 100V Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Small Surface Mount Package Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description Mechanical Data This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications Case: SOT23 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish Annealed over Alloy 42 Leadframe). Terminal Connections: See Diagram Weight: 0.006 grams (Approximate) DC-DC Converters Power Management Functions Battery Operated Systems and Solid-State Relays Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D D G S G S Top View Pin Configuration Top View Equivalent Circuit Ordering Information (Note 4) Part Number DMN10H700S-7 DMN10H700S-13 Notes: Case SOT23 SOT23 Packaging 3,000/Tape & Reel 10,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. Marking Information 700 = Product Type Marking Code YM = Date Code Marking Y or Y = Year (ex: E= 2017) M = Month (ex: 9 = September) 700 Date Code Key Year 2015 Code C Month Code Jan 1 2016 D Feb 2 DMN10H700S Document number: DS38103 Rev. 3 - 2 2017 E Mar 3 2018 F Apr 4 2019 G May 5 2020 H Jun 6 1 of 7 www.diodes.com 2021 I Jul 7 2022 J Aug 8 2023 K Sep 9 Oct O 2024 L 2025 M Nov N Dec D October 2017 (c) Diodes Incorporated DMN10H700S Maximum Ratings (@TA = +25C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Unit V V ID Value 100 20 0.70 0.56 Pulsed Drain Current (10s Pulse, Duty Cycle 1%) IDM 2.5 A Maximum Body Diode Continuous Current (Note 6) IS 0.6 A Drain-Source Voltage Gate-Source Voltage PRODUCT INFORMATION ADVANCED NEW Continuous Drain Current (Note 6) VGS = 10V Steady State TA = +25C TA = +70C A Thermal Characteristics (@TA = +25C, unless otherwise specified.) Characteristic Total Power Dissipation Thermal Resistance, Junction to Ambient (Note 5) Thermal Resistance, Junction to Ambient (Note 6) Thermal Resistance, Junction to Case Operating and Storage Temperature Range Electrical Characteristics Symbol (Note 5) (Note 6) Value 0.4 0.5 303 239 88 -55 to +150 PD Steady state (Note 6) RJA RJA RJC TJ, TSTG Unit W C/W C (@TA = +25C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 100 1 100 V A nA VGS = 0V, ID = 250A VDS = 100V, VGS = 0V VGS = 20V, VDS = 0V VGS(TH) RDS(ON) 2.7 540 550 0.9 4.0 700 900 1.1 V Static Drain-Source On-Resistance 2.0 m VDS = VGS, ID = 250A VGS = 10V, ID = 1.5A VGS = 6.0V, ID = 1.0A VGS = 0V, IS = 1.5A Ciss Coss Crss RG 235 7 5 pF VDS = 50V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1.0MHz 1.9 4.6 1.1 1.6 2.5 1.1 5.4 1.0 22 15 Qg Qgs Qgd nC VDS = 50V, VGS = 10V, ID = 1.0A ns VDS = 50V, ID = 1.0A, VGS = 10V, RG = 6.0 ns nC VR = 100V, IF=1.8A, di/dt=100A/s Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Reverse Recovery Time Reverse Recovery Charge Notes: VSD tD(ON) tR tD(OFF) tF tRR QRR V Test Condition 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout. 7 .Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. DMN10H700S Document number: DS38103 Rev. 3 - 2 2 of 7 www.diodes.com October 2017 (c) Diodes Incorporated DMN10H700S 3 4.0 VGS=10.0V 2.5 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 2.5 VGS=6.0V 3.0 VGS=4.5V 2.0 1.5 1.0 VGS=3.8V 0.5 1.5 1 125 150 85 25 -55 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. Typical Output Characteristic 5 2 1.8 1.6 1.4 1.2 VGS=6V 1 0.8 0.6 1 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 2 0.5 VGS=4.0V 0.0 VGS=10V 0.4 0.2 0 8 7 6 5 4 3 2 4 150 3 2 -55 25 85 125 1 0 0 0.5 1 1.5 2 2.5 3 3.5 4 ID, DRAIN CURRENT (A) Figure 5. Typical On-Resistance vs. Drain Current and Junction Temperature DMN10H700S Document number: DS38103 Rev. 3 - 2 ID=1.0A 1 0 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) VGS= 10V 5 3 of 7 www.diodes.com 6 9 0.5 1 1.5 2 2.5 3 3.5 4 ID, DRAIN-SOURCE CURRENT (A) Figure 3. Typical On-Resistance vs. Drain Current and Gate Voltage 6 2 3 4 5 VGS, GATE-SOURCE VOLTAGE (V) Figure 2. Typical Transfer Characteristic 10 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () PRODUCT INFORMATION ADVANCED NEW VDS=5V VGS=5.0V 3.5 4 8 12 16 VGS, GATE-SOURCE VOLTAGE (V) Figure 4. Typical Transfer Characteristic 20 2.5 2 VGS=10V, ID=1.5A 1.5 1 0.5 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE () Figure 6. On-Resistance Variation with Junction Temperature October 2017 (c) Diodes Incorporated VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 1.6 1.4 1.2 1 VGS=10V, ID=1.5A 0.8 0.6 0.4 0.2 0 4 3.5 2.5 ID=250A 2 1.5 1 0.5 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE () Figure 8. Gate Threshold Variation vs. Junction Temperature -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE () Figure 7. On-Resistance Variation with Junction Temperature 1000 4 VGS=0V,TJ=85 3 VGS=0V,TJ=125 2 VGS=0V, TJ=25 VGS=0V,TJ=150 VGS=0V, TJ=-55 1 f=1MHz CT, JUNCTION CAPACITANCE (pF) 5 IS, SOURCE CURRENT (A) ID=1mA 3 -50 Ciss 100 Coss 10 Crss 1 0 0 0 0.3 0.6 0.9 1.2 1.5 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current 5 10 15 20 25 30 35 40 45 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10. Typical Junction Capacitance 50 10 10 RDS(ON) Limited ID, DRAIN CURRENT (A) 8 VGS (V) PRODUCT INFORMATION ADVANCED NEW DMN10H700S 6 VDS=50V, ID=1A 4 0.1 0.01 0.001 0 0 0.5 1 1.5 2.5 3 3.5 Qg (nC) Figure 11. Gate Charge DMN10H700S Document number: DS38103 Rev. 3 - 2 2 4 4.5 5 4 of 7 www.diodes.com PW =100s PW =10ms 1 2 PW =1ms PW =100ms PW =1s TJ(MAX)=150 TC=25 Single Pulse DUT on 1*MRP board PW =10s DC VGS=10V 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12. SOA, Safe Operation Area 1000 October 2017 (c) Diodes Incorporated DMN10H700S PRODUCT INFORMATION ADVANCED NEW r(t), TRANSIENT THERMAL RESISTANCE 1 D=0.5 D=0.9 D=0.3 D=0.7 0.1 D=0.1 D=0.05 D=0.02 0.01 D=0.01 D=0.005 RJA(t)=r(t) * RJA RJA=303C/W Duty Cycle, D=t1 / t2 D=Single Pulse 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, PULSE DURATION TIME (sec) Figure 13. Transient Thermal Resistance DMN10H700S Document number: DS38103 Rev. 3 - 2 5 of 7 www.diodes.com October 2017 (c) Diodes Incorporated DMN10H700S Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. PRODUCT INFORMATION ADVANCED NEW SOT23 All 7 H K1 GAUGE PLANE 0.25 J K a M A L C L1 B D F G SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.890 1.00 0.975 K1 0.903 1.10 1.025 L 0.45 0.61 0.55 L1 0.25 0.55 0.40 M 0.085 0.150 0.110 a 0 8 -All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SOT23 Y C Y1 X DMN10H700S Document number: DS38103 Rev. 3 - 2 Dimensions C X X1 Y Y1 Value (in mm) 2.0 0.8 1.35 0.9 2.9 X1 6 of 7 www.diodes.com October 2017 (c) Diodes Incorporated DMN10H700S IMPORTANT NOTICE PRODUCT INFORMATION ADVANCED NEW DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright (c) 2017, Diodes Incorporated www.diodes.com DMN10H700S Document number: DS38103 Rev. 3 - 2 7 of 7 www.diodes.com October 2017 (c) Diodes Incorporated