© 2005 IXYS All rights reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C -500 V
VDGR TJ= 25°C to 150°C; RGS = 1 MΩ-500 V
VGS Continuous ±20 V
VGSM Transient ±30 V
ID25 TC= 25°C -11 A
IDM TC= 25°C, pulse width limited by TJ-44 A
IAR TC= 25°C -11 A
EAR TC= 25°C30mJ
PDTC= 25°C 300 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TLMaximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
MdMounting torque (TO-247) 1.13/10 Nm/lb.in.
Weight TO-247 AD 6 g
TO-268 4 g
Standard Power MOSFET
P-Channel Enhancement Mode
Avalanche Rated
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS VGS = 0 V, ID = -250 µA -500 V
BVDSS Temperature Coefficient 0.054 %/K
VGS(th) VDS = VGS, ID = -250 µA -3.0 -5.0 V
VGS(th) Temperature Coefficient -0.122 %/K
IGSS VGS = ±20 VDC, VDS = 0 ±100 nA
IDSS VDS = 0.8 • VDSS TJ =25°C -200 µA
VGS = 0 V TJ = 125°C-1mA
RDS(on) VGS = -10 V, ID = 0.5 • ID25 0.75 Ω
RDS(on) Temperature Coefficient 0.6 %/K
DS94535J(01/05)
TO-247 AD (IXTH)
G = Gate D = Drain
S = Source TAB = Drain
TO-268 (IXTT) Case Style
(TAB)
G
S
Features
zInternational standard packages
zLow RDS (on) HDMOSTM process
zRugged polysilicon gate cell structure
zUnclamped Inductive Switching (UIS)
rated
zLow package inductance
- easy to drive and to protect
Advantages
zEasy to mount
zSpace savings
zHigh power density
D
(TAB)
D
VDSS = -500 V
ID25 = -11 A
RDS(on) = 0.75 ΩΩ
ΩΩ
Ω
IXTH 11P50
IXTT 11P50
IXTH 11P50
IXTT 11P50
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs VDS = -10 V; ID = ID25, pulse test 5 9 S
Ciss 4700 pF
Coss VGS = 0 V, VDS = -25 V, f = 1 MHz 430 pF
Crss 135 pF
td(on) 33 ns
trVGS = -10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 27 ns
td(off) RG = 4.7 Ω (External) 35 ns
tf35 ns
QG(on) 130 nC
QGS VGS = -10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 46 nC
QGD 92 nC
RthJC 0.42 K/W
RthCS (TO-247) 0.25 K/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
ISVGS = 0 10P50 -10 A
11P50 -11 A
ISM Repetitive; pulse width limited by TJM 10P50 -40 A
11P50 -44 A
VSD IF = IS, VGS = 0 V, -3 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
trr IF = IS, di/dt = 100 A/µs 500 ns
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A12.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
TO-247 AD Outline
Terminals: 1 - Gate 2 - Drain
3 - Source Tab - Drain
1 2 3
TO-268 Outline
Terminals: 1 - Gate 2 - Drain
3 - Source Tab - Drain
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6771478 B2
© 2005 IXYS All rights reserved
Fig. 1. Output Characteristics
@ 25 Deg. C
-12
-10
-8
-6
-4
-2
0
-10-8-6-4-20
VDS - Volts
ID - Amperes
VGS= -10V
-9V
-8V
-7V
-5V
-6V
Fig. 4. RDS(ON) Normalized to ID25
V
alue
vs. Junction Temperature
0.4
0.7
1
1.3
1.6
1.9
2.2
2.5
-50 -25 0 25 50 75 100 125 150
TJ - Degrees Centigrade
RDS(ON) - Normalized
ID= -11A
ID= -5.5A
VGS= -10V
Fig. 5. RDS(ON) Normalized to ID25
Value vs. ID
0.6
1
1.4
1.8
2.2
2.6
-25-20-15-10-50
ID - Amperes
RDS(ON) - Normalized
TJ=125°C
TJ=25°C
VGS= -10V
Fig. 6. Input Admittance
-18
-15
-12
-9
-6
-3
0
-7.5-7-6.5-6-5.5-5-4.5
VGS - Volts
ID - Amperes
TJ= -40°C
2 5 °C
125°C
Fig. 2. Extended Output Characteristics
@ 25 Deg. C
-24
-20
-16
-12
-8
-4
0
-20-16-12-8-40
VDS - Volts
ID - Amperes
VGS= -10
V
-9V
-8V
-5V
-6V
-7V
Fig. 3. Output Characteristics
@ 125 Deg. C
-12
-10
-8
-6
-4
-2
0
-18-15-12-9-6-30
VDS - Volts
ID - Amperes
VGS= -10V
-9V
-8V
-7V
-5V
-6
V
IXTH 11P50
IXTT 11P50
IXTH 11P50
IXTT 11P50
Fig. 7. Transconductance
0
5
10
15
20
25
-30-25-20-15-10-50
ID
- Amperes
Gfs - Siemens
TJ = 25°C
TJ = -40°C
TJ = 125°C
Fig. 8. Source Current vs. Source-To-
Drain Voltage
0
10
20
30
40
50
0.5 1 1.5 2 2.5 3 3.5
VSD - Volts
IS - Amperes
TJ=125°C
TJ=25°C
Fig. 9. Gate Charge
-10
-8
-6
-4
-2
0
0 25 50 75 100 125
QG - nanoCoulombs
VGS - Volts
VDS= -250V
ID= -5.5A
IG= -1mA
Fig. 10. Capacitance
100
1000
10000
-40-30-20-100
VDS - Volts
Capacitance - pF
Ciss
Coss
Crss
f=1Mhz
Fig. 14. Maximum Transient Thermal Resistance
0.01
0.1
1
1 10 100 1000
Pulse W idth - milliseconds
R(TH)JC - (ºC/W)
