AON6774
General Description Product Summary
V
DS
I
D
(at V
GS
=10V) 85A
R
DS(ON)
(at V
GS
=10V) < 2.05mΩ
R
DS(ON)
(at V
GS
=4.5V) < 3.15mΩ
Application
100% UIS Tested
100% Rg Tested
Symbol
• DC/DC Converters in Computing, Servers, and POL
• Isolated DC/DC Converters in Telecom and Industrial
Parameter
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Units
AON6774 DFN 5x6 Tape & Reel 3000
30V N-Channel AlphaMOS
Orderable Part Number Package Type Form Minimum Order Quantity
30V
• Latest Trench Power AlphaMOS (αMOS LV) technology
• Integrated Schottky Diode (SRFET)
• Very Low R
DS(ON)
at 4.5V V
GS
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant
Top View
1
2
3
4
8
7
6
5
PIN1
DFN5X6
Top View Bottom View
G
D
S
SRFETTM
Soft Recovery MOSFET:
Integrated Schottky Diode
Symbol
V
DS
V
GS
I
DM
I
AS
Avalanche energy L=0.05mH
C
E
AS
V
DS
Spike V
SPIKE
T
J
, T
STG
Symbol
t ≤ 10s
Steady-State
Steady-State
R
θJC
Power Dissipation
B
19
T
C
=100°C
10µs
P
D
30
36
48
Gate-Source Voltage
Pulsed Drain Current
C
66
Parameter
Drain-Source Voltage
Continuous Drain
Current
G
Maximum Junction-to-Case °C/W
°C/W
Maximum Junction-to-Ambient
A D
250
2.6
V
A
±20 V
Units
W
I
D
V
A56
A
260
I
DSM
35
mJ78
44
85
Maximum Junction-to-Ambient
A
°C/W
R
θJA
15
40 20
Thermal Characteristics
Parameter Max
T
A
=70°C 4°C
Units
Junction and Storage Temperature Range -55 to 150
Typ
P
DSM
W
T
A
=25°C 6.2
Power Dissipation
A
T
A
=25°C
T
A
=70°C
T
C
=25°C
T
C
=100°C
T
C
=25°C
Avalanche Current
C
Continuous Drain
Current
Rev.1.0: October 2013
www.aosmd.com Page 1 of 6
Symbol Min Typ Max Units
BV
DSS
30 V
V
DS
=30V, V
GS
=0V 0.5
T
J
=55°C 100
I
GSS
±100 nA
V
GS(th)
Gate Threshold Voltage 1.4 1.8 2.2 V
1.7 2.05
T
J
=125°C 2.4 2.9
2.5 3.15 mΩ
g
FS
105 S
V
SD
0.42 0.6 V
I
S
58 A
C
iss
3000 pF
C
oss
1280 pF
C
rss
160 pF
R
g
1 2 3 Ω
Q
g
(10V) 43 60 nC
Q
g
(4.5V) 20.5 30 nC
Q
gs
7.7 nC
Q
gd
7.5 nC
t
D(on)
11 ns
t
r
6 ns
t
D(off)
38.5 ns
t
f
10
ns
Reverse Transfer Capacitance V
GS
=0V, V
DS
=15V, f=1MHz
V
DS
=V
GS,
I
D
=250µA
Output Capacitance
Forward Transconductance I
S
=1A,V
GS
=0V
V
DS
=5V, I
D
=20A
V
GS
=10V, I
D
=20A
V
DS
=0V, V
GS
=±20V
Maximum Body-Diode Continuous Current
Input Capacitance
Gate-Body leakage current
Turn-Off DelayTime
Turn-Off Fall Time
V
GS
=10V, V
DS
=15V, R
L
=0.75Ω,
R
GEN
=3Ω
Diode Forward Voltage
DYNAMIC PARAMETERS
V
GS
=4.5V, I
D
=20A
Turn-On Rise Time
Gate Source Charge
Gate Drain Charge
Total Gate Charge
SWITCHING PARAMETERS
Turn-On DelayTime
mΩ
V
GS
=10V, V
DS
=15V, I
D
=20A
Total Gate Charge
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
Gate resistance f=1MHz
I
DSS
mAZero Gate Voltage Drain Current
Drain-Source Breakdown Voltage ID=10mA, VGS=0V
R
DS(ON)
Static Drain-Source On-Resistance
t
f
10
ns
t
rr
22 ns
Q
rr
42 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Charge
Body Diode Reverse Recovery Time I
F
=20A, dI/dt=500A/µs
Turn-Off Fall Time
I
F
=20A, dI/dt=500A/µs
A. The value of RθJA is measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The Power
dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design.
B. The power dissipation PDis based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
Rev.1.0: October 2013 www.aosmd.com Page 2 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
20
40
60
80
0123456
ID(A)
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
0
1
2
3
4
0 5 10 15 20 25 30
RDS(ON) (mΩ
Ω
Ω
Ω)
I
D
(A)
Figure 3: On
-
Resistance vs. Drain Current and Gate
0.8
1
1.2
1.4
1.6
0 25 50 75 100 125 150 175
Normalized On-Resistance
Temperature (°C)
Figure 4: On
-
Resistance vs. Junction Temperature
VGS=4.5V
ID=20A
VGS=10V
ID=20A
25°C
125°C
VDS=5V
VGS=4.5V
VGS=10V
0
20
40
60
80
012345
ID(A)
VDS (Volts)
Figure 1: On-Region Characteristics (Note E)
VGS=2.5V
3.5V
4.5V
10V
3V
D
Figure 3: On
-
Resistance vs. Drain Current and Gate
Voltage (Note E)
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0 0.2 0.4 0.6 0.8 1.0
IS(A)
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
25°C
125°C
Figure 4: On
-
Resistance vs. Junction Temperature
(Note E)
0
1
2
3
4
5
6
2 4 6 8 10
RDS(ON) (mΩ
Ω
Ω
Ω)
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
ID=20A
25°C
125°C
Rev.1.0: October 2013 www.aosmd.com Page 3 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
2
4
6
8
10
0 10 20 30 40 50
VGS (Volts)
Qg(nC)
Figure 7: Gate-Charge Characteristics
0
500
1000
1500
2000
2500
3000
3500
4000
4500
0 5 10 15 20 25 30
Capacitance (pF)
VDS (Volts)
Figure 8: Capacitance Characteristics
Ciss
0
100
200
300
400
500
0.0001 0.001 0.01 0.1 1 10 100
Power (W)
Pulse Width (s)
Coss
C
rss
VDS=15V
ID=20A
TJ(Max)=150°C
TC=25°C
10
µ
s
0.0
0.1
1.0
10.0
100.0
1000.0
0.01 0.1 1 10 100
ID(Amps)
VDS (Volts)
V
> or equal to 4.5V
10µs
1ms
DC
RDS(ON)
limited
TJ(Max)=150°C
TC=25°C
100
µ
s
10ms
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
0.01
0.1
1
10
1E-05 0.0001 0.001 0.01 0.1 1 10 100
Zθ
θ
θ
θJC Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Single Pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
V
GS
> or equal to 4.5V
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
RθJC=2.6°C/W
Rev.1.0: October 2013 www.aosmd.com Page 4 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
10
20
30
40
50
60
0 25 50 75 100 125 150
Power Dissipation (W)
TCASE (°
°°
°C)
Figure 12: Power De-rating (Note F)
0
20
40
60
80
100
0 25 50 75 100 125 150
Current rating ID(A)
TCASE (°
°°
°C)
Figure 13: Current De-rating (Note F)
1
10
100
1000
10000
1E-05 0.001 0.1 10 1000
Power (W)
Pulse Width (s)
TA=25°C
0.001
0.01
0.1
1
10
0.0001 0.001 0.01 0.1 1 10 100 1000
Zθ
θ
θ
θJA Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)
RθJA=50°C/W
Rev.1.0: October 2013 www.aosmd.com Page 5 of 6
-
+
VDC
Ig
Vds
DUT
-
+
VDC
Vgs
Vgs
10V
Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+
VDC
DUT Vdd
Vgs
Vds
Vgs
RL
Rg
Vgs
Vds
10%
90%
Resistive Switching Test Circuit & Waveforms
t t
r
d(on)
ton
td(off) t
f
toff
L
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Vdd
Vgs
Id
Vgs
Rg
DUT
-
+
VDC
L
Vgs
Vds
Id
Vgs
BV
I
Ig
Vgs
-
+
VDC
DUT
L
Vds
Vgs
Vds
Isd
Isd
Diode Recovery Test Circuit & Waveforms
Vds -
Vds +
IF
AR
DSS
2
E = 1/2 LI
dI/dt
IRM
rr
Vdd
Vdd
Q = - Idt
AR
AR
t
rr
Rev.1.0: October 2013 www.aosmd.com Page 6 of 6