© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 08/30/17
Thyristors
Surface Mount – 600V - 800V > MC4DCM, MAC4DCN
• Small Size Surface Mount DPAK Package
• Passivated Die for Reliability and Uniformity
• Blocking Voltage to 800 V
• On−State Current Rating of 4.0 A RMS at 108°C
• High Immunity to dv/dt − 500 V/µs at 125°C
• High Immunity to di/dt − 6.0 A/ms at 125°C
• Epoxy Meets UL 94 V−0 @ 0.125 in
• ESD Ratings: Human Body Model, 3B > 8000 V
Machine Model, C > 400 V
• Pb−Free Packages are Available
Features
Designed for high volume, low cost, industrial and
consumer applications such as motor control; process
control; temperature, light and speed control.
Description
Pin Out
MC4DCM, MAC4DCN
Functional Diagram
MT1
G
MT2
Pb
Additional Information
Samples
Resources
Datasheet
12
3
4
1
23
4
© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 08/30/17
Thyristors
Surface Mount – 600V - 800V > MC4DCM, MAC4DCN
Rating Symbol Value Unit
Peak Repetitive Off-State Voltage (Note 1)
(Gate Open, Sine Wave 50 to 60 Hz, TJ = -40° to 125°C)
MAC4DCM
MAC4DCM
VDRM,
VRRM 600
800
V
On-State RMS Current (Full Cycle Sine Wave, 60 Hz, TC = 108°C) IT (RMS) 4.0 A
Peak Non-Repetitive Surge Current
(One Full Cycle Sine Wave, 60 Hz, TC= 125°C) ITSM 40 A
Circuit Fusing Consideration (t = 8.3 msec) I2t 6.6 A²sec
Peak Gate Current (Pulse Width ≤ 20 µsec, TC= 108°C) IGM 4.0 W
Peak Gate Power (Pulse Width ≤ 10 µsec, TC= 108°C) PGM 2.0 W
Average Gate Power (t = 8.3 msec, TC= 108°C) PG(AV) 1. 0 W
Operating Junction Temperature Range TJ-40 to +125 °C
Storage Temperature Range Tstg -40 to +125 °C
Maximum Ratings (TJ = 25°C unless otherwise noted)
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied.
Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
1. V DRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative
potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
2. These ratings are applicable when surface mounted on the minimum pad sizes recommended.
3. 1/8" from case for 10 seconds.
Thermal Characteristics
Rating Symbol Value Unit
Thermal Resistance, Junction−to−Case (AC)
Junction−to−Ambient
Junction−to−Ambient (Note 2)
RθJC
RθJA
RθJA
3.5
88
80
°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for
10 seconds (Note 3) TL260 °C
© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 08/30/17
Thyristors
Surface Mount – 600V - 800V > MC4DCM, MAC4DCN
Electrical Characteristics - OFF (TJ = 25°C unless otherwise noted ; Electricals apply in both directions)
Electrical Characteristics - ON (TJ = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic Symbol Min Typ Max Unit
Peak Repetitive Blocking Current TJ = 25°C
(VD = VDRM = VRRM; Gate Open)
TJ = 110°C
IDRM,
IRRM
- - 0.005
mA
- - 2.0
4. Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.
Characteristic Symbol Min Typ Max Unit
Peak On−State Voltage (Note 4) (ITM = ±6.0 A) VTM −1. 3 1. 6 V
Gate Trigger Current
(Continuous dc)
(VD = 12 V, RL = 100 Ω)
MT2(+), G(+)
IGT
8.0 12 35
mA
MT2(+), G(−) 8.0 18 35
MT2(−), G(−) 8.0 22 35
Holding Current
(VD = 12 V, Gate Open, Initiating Current = ±200 mA) IH6.0 22 35 mA
Latching Current
(VD = 12 V, IG = 35 mA)
MT2(+), G(+)
IL
− 30 60
mA
MT2(+), G(−) − 50 80
MT2(−), G(−) − 20 60
Gate Trigger Voltage
(Continuous dc)
(VD = 12 V, RL = 100 Ω)
MT2(+), G(+)
VGT
0.5 0.8 1. 3
V
MT2(+), G(−) 0.5 0.8 1. 3
MT2(−), G(−) 0.5 0.8 1. 3
Gate Non−Trigger Voltage
(TJ = 125°C)
(VD = 12 V, RL = 100 Ω)
MT2(+), G(+)
VGD
0.2 0.4 −
VMT2(+), G(−) 0.2 0.4 −
MT2(−), G(−) 0.2 0.4 −
© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 08/30/17
Thyristors
Surface Mount – 600V - 800V > MC4DCM, MAC4DCN
Voltage Current Characteristic of SCR
Quadrant Definitions for a Triac
Symbol Parameter
VDRM Peak Repetitive Forward Off State Voltage
IDRM Peak Forward Blocking Current
VRRM Peak Repetitive Reverse Off State Voltage
IRRM Peak Reverse Blocking Current
VTM Maximum On State Voltage
IHHolding Current
Dynamic Characteristics
Characteristic Symbol Min Typ Max Unit
RRate of Change of Commutating Current
(VD = 400 V, ITM = 4.0 A, Commutating dv/dt = 18 V/µsec,
Gate Open, TJ = 125°C, f = 250 Hz, CL = 5.0 µF, LL = 20 mH, No Snubber)
(See Figure 16)
(dI/dt)c 6.0 8.4 − A/ms
Critical Rate of Rise of Off-State Voltage
(VD = 0.67 x VDRM, Exponential Waveform, Gate Open, TJ = 125°C) dV/dt 500 1700 − V/µs
+C urrent
+V oltage
VTM
IH
IDRM at VDRM
on state
off state
IRRM at VRRM
Quadrant 1
MainTerminal 2 +
Quadrant 3
MainTerminal 2 VTM
IH
MT1
(+) IGT
GATE
(+) MT2
REF
MT1
() IGT
GATE
(+) MT2
REF
MT1
(+) IGT
GATE
() MT2
REF
MT1
() IGT
GATE
() MT2
REF
MT2 NEGATIVE
(Negative Half Cycle)
MT2 POSITIVE
(Positive Half Cycle)
+
VItnardauQIIItnardauQ
ItnardauQIItnardauQ
IGT +I GT
All polarities are referenced to MT1.
With in phase signals (using standard AC lines) quadrants I and III are used.
© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 08/30/17
Thyristors
Surface Mount – 600V - 800V > MC4DCM, MAC4DCN
Figure 4. Transient Thermal ResponseFigure 3. On−State Characteristics
Figure 6. Typical Gate Trigger Voltage vs. Junction TemperatureFigure 5. Typical Gate Trigger Current vs, Junction Temperature
t, TIME (ms)
1.00.1
1.0
0.1
0.01
r(t), TRANSIENT RESISTANCE (NORMALIZED)
k 01000100101
ZJC(t)
= R JC(t) r(t)
5.00
VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
100
10
1.0
0.1
4.0
I
0.30.20.1
, INSTANTANEOUS ON-STATE CURRENT (AMPS)
T
TYPICAL @ TJ = 25ϒC
MAXIMUM @ T
J = 25ϒC
MAXIMUM @ T
J = 125ϒC
°
°
°
°
°
°
α
α
Figure 1. Typical RMS Current Derating Figure 2. On-State Power Dissipation
°
°
°
°
α
α
°
© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 08/30/17
Thyristors
Surface Mount – 600V - 800V > MC4DCM, MAC4DCN
Figure 10. Exponential Static dv/dt vs.
Gate−MT1 Resistance, MT2(-)
Figure 9. Exponential Static dv/dt vs.
Gate−MT1 Resistance, MT2(+)
Figure 9. Exponential Static dv/dt vs. Peak Voltage, MT2(-)Figure 11. Exponential Static dv/dt vs. Peak Voltage, MT2(+)
Figure 7. Typical Holding Current vs. Junction Temperature Figure 8. Typical Latching Current vs.Junction Temperature
© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 08/30/17
Thyristors
Surface Mount – 600V - 800V > MC4DCM, MAC4DCN
125100
TJ, JUNCTION TEMPERATURE (ϒC)
4.0 K
2.0 K
0
021511011501
10 K
8.0 K
STATIC dv/dt (V/ s)
GATE OPEN
VPK = 400 V
800 V
600 V
6.0 K
Figure 13. Typical Exponential Static dv/dt vs.Junction
Temperature, MT2(+)
Figure 13. Typical Exponential Static dv/dt vs.Junction
Temperature, MT2(-)
Note: Component values are for verification of rated (di/dt)c. See AN1048 for additional information
Figure 16. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)
LL1N4007
200 V
+
MEASURE
I
-
CHARGE
CONTROL
CHARGE TRIGGER
CL
51
MT2
MT1
1N914
G
TRIGGER CONTROL
200 VRMS
ADJUST FOR
ITM
, 60 Hz VAC
Figure 15. Critical Rate of Rise of Commutating Voltage
© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 08/30/17
Thyristors
Surface Mount – 600V - 800V > MC4DCM, MAC4DCN
Dimensions Soldering Footprint
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,
1982.
2. CONTROLLING DIMENSION: INCH.
STYLE 6:
PIN 1. MT1
2. MT2
3. GATE
4. MT2
Dim
Inches Millimeters
Min Max Min Max
A 0.235 0.245 5.97 6.35
B 0.250 0.265 6.35 6.73
C 0.086 0.094 2.19 2.38
D0.027 0.035 0.69 0.88
E 0.018 0.023 0.46 0.58
F 0.037 0.045 0.94 1. 14
G 0.090 BSC 2.29 BSC
H0.034 0.040 0.87 1.01
J 0.018 0.023 0.46 0.58
K 0.350 0.380 8.89 9.65
R 0.180 0.215 4.45 5.45
S 0.025 0.040 0.63 1. 01
V 0.035 0.050 0.89 1.27
Z 0.155 −−− 3.93 −−−
D
A
K
B
R
V
S
F
L
G
2 PL
M
0.13 (0.005) T
E
C
U
J
H
TSEATING
PLANE
Z
12 3
4
DPAK
CASE 369C
ISSUE O
5.80
0.228
2.58
0.101
1.6
0.063
6.20
0.244
3.0
0.118
6.172
0.243
mm
inches
SCALE 3:1
© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 08/30/17
Thyristors
Surface Mount – 600V - 800V > MC4DCM, MAC4DCN
Dimensions Part Marking System
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,
1982.
2. CONTROLLING DIMENSION: INCH.
STYLE 6:
PIN 1. MT1
2. MT2
3. GATE
4. MT2
Dim
Inches Millimeters
Min Max Min Max
A 0.235 0.245 5.97 6.35
B 0.250 0.265 6.35 6.73
C 0.086 0.094 2.19 2.38
D0.027 0.035 0.69 0.88
E 0.018 0.023 0.46 0.58
F 0.037 0.045 0.94 1. 14
G 0.090 BSC 2.29 BSC
H0.034 0.040 0.87 1.01
J 0.018 0.023 0.46 0.58
K 0.350 0.380 8.89 9.65
R 0.180 0.215 4.45 5.45
S 0.025 0.040 0.63 1. 01
V 0.035 0.050 0.89 1.27
Z 0.155 −−− 3.93 −−−
Pin Assignment
1Main Terminal 1
2Main Terminal 2
3 Gate
4Main Terminal 2
Ordering Information
Device Package
Type Package Shipping
MAC4DCM−001 DPAK−3 369D 75 Units / Rail
MAC4DCM−1G DPAK−3
(Pb−Free) 369D 75 Units / Rail
MAC4DCMT4 DPAK−3 369C 2500 / Tape &
Reel
MAC4DCMT4G DPAK−3
(Pb−Free) 369C 2500 / Tape &
Reel
MAC4DCN−001 DPAK−3 369D 75 Units / Rail
MAC4DCN−1G DPAK−3
(Pb−Free) 369D 75 Units / Rail
MAC4DCNT4 DPAK−3 369C 2500 / Tape &
Reel
MAC4DCNT4G DPAK−3
(Pb−Free) 369C 2500 / Tape &
Reel
DPAK 3
CASE 369D
STYLE 6
DPAK
CASE 369C
STYLE 6
Y= Y ear
WW = Work Week
AC4DCx = Device Code
x= M or N
G= Pb Free Package
12
3
4
YWW
AC
4DCxG
1
23
4
YWW
AC
4DCxG
12 3
4
V
SA
K
T
SEATING
PLANE
R
B
F
G
D3 PL
M
0.13 (0.005) T
C
E
J
H
Z
DPAK
CASE 369C
ISSUE O
Disclaimer Notice - Information furnished is believed to be accurate and
reliable. However, users should independently evaluate the suitability of and
test each product selected for their own applications. Littelfuse products are
not designed for, and may not be used in, all applications. Read complete
Disclaimer Notice at: www.littelfuse.com/disclaimer-electronics
