Thyristors Surface Mount - 600V - 800V > MC4DCM, MAC4DCN MC4DCM, MAC4DCN Pb Description Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control. Features * Small Size Surface Mount DPAK Package * Passivated Die for Reliability and Uniformity * Blocking Voltage to 800 V * On-State Current Rating of 4.0 A RMS at 108C * High Immunity to dv/dt - 500 V/s at 125C * High Immunity to di/dt - 6.0 A/ms at 125C * Epoxy Meets UL 94 V-0 @ 0.125 in Pin Out * ESD Ratings: Human Body Model, 3B > 8000 V Machine Model, C > 400 V 4 4 * Pb-Free Packages are Available Functional Diagram 1 2 3 1 2 MT2 MT1 3 G Additional Information Datasheet Resources Samples (c) 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 08/30/17 Thyristors Surface Mount - 600V - 800V > MC4DCM, MAC4DCN Maximum Ratings (TJ = 25C unless otherwise noted) Rating Symbol Peak Repetitive Off-State Voltage (Note 1) Value Unit VDRM, (Gate Open, Sine Wave 50 to 60 Hz, TJ = -40 to 125C) VRRM MAC4DCM 600 V 800 MAC4DCM On-State RMS Current (Full Cycle Sine Wave, 60 Hz, TC = 108C) IT (RMS) 4.0 A Peak Non-Repetitive Surge Current (One Full Cycle Sine Wave, 60 Hz, TC= 125C) ITSM 40 A Circuit Fusing Consideration (t = 8.3 msec) I 2t 6.6 Asec Peak Gate Current (Pulse Width 20 sec, TC= 108C) IGM 4.0 W Peak Gate Power (Pulse Width 10 sec, TC= 108C) PGM 2.0 W Average Gate Power (t = 8.3 msec, TC= 108C) PG(AV) 1.0 W Operating Junction Temperature Range TJ -40 to +125 C Storage Temperature Range Tstg -40 to +125 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1.VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Thermal Characteristics Rating Thermal Resistance, Symbol Junction-to-Ambient RJC RJA Junction-to-Ambient (Note 2) RJA Junction-to-Case (AC) Maximum Lead Temperature for Soldering Purposes, 1/8" from case for 10 seconds (Note 3) TL Value Unit 3.5 88 C/W 80 260 C 2.These ratings are applicable when surface mounted on the minimum pad sizes recommended. 3.1/8" from case for 10 seconds. (c) 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 08/30/17 Thyristors Surface Mount - 600V - 800V > MC4DCM, MAC4DCN Electrical Characteristics - OFF (TJ = 25C unless otherwise noted ; Electricals apply in both directions) Characteristic Peak Repetitive Blocking Current (VD = VDRM = VRRM; Gate Open) Symbol Min Typ Max Unit TJ = 25C IDRM, - - 0.005 TJ = 110C IRRM - - 2.0 mA Electrical Characteristics - ON (TJ = 25C unless otherwise noted; Electricals apply in both directions) Characteristic Symbol Min Typ Max Unit VTM - 1.3 1.6 V 8.0 12 35 8.0 18 35 8.0 22 35 6.0 22 35 - 30 60 - 50 80 MT2(-), G(-) - 20 60 MT2(+), G(+) 0.5 0.8 1.3 0.5 0.8 1.3 MT2(-), G(-) 0.5 0.8 1.3 MT2(+), G(+) 0.2 0.4 - 0.2 0.4 - 0.2 0.4 - Peak On-State Voltage (Note 4) (ITM = 6.0 A) MT2(+), G(+) Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 ) MT2(+), G(-) IGT MT2(-), G(-) Holding Current (VD = 12 V, Gate Open, Initiating Current = 200 mA) IH MT2(+), G(+) Latching Current (VD = 12 V, IG = 35 mA) Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 ) MT2(+), G(-) MT2(+), G(-) IL VGT mA mA mA V Gate Non-Trigger Voltage (TJ = 125C) MT2(+), G(-) VGD (VD = 12 V, RL = 100 ) MT2(-), G(-) 4.Indicates Pulse Test: Pulse Width 2.0 ms, Duty Cycle 2%. (c) 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 08/30/17 V Thyristors Surface Mount - 600V - 800V > MC4DCM, MAC4DCN Dynamic Characteristics Characteristic Symbol Min Typ Max Unit (dI/dt)c 6.0 8.4 - A/ms dV/dt 500 1700 - V/s RRate of Change of Commutating Current (VD = 400 V, ITM = 4.0 A, Commutating dv/dt = 18 V/sec, Gate Open, TJ = 125C, f = 250 Hz, CL = 5.0 F, LL = 20 mH, No Snubber) (See Figure 16) Critical Rate of Rise of Off-State Voltage (VD = 0.67 x VDRM, Exponential Waveform, Gate Open, TJ = 125C) Voltage Current Characteristic of SCR Symbol Parameter +C urrent VDRM Peak Repetitive Forward Off State Voltage IDRM Peak Forward Blocking Current VRRM Peak Repetitive Reverse Off State Voltage IRRM Peak Reverse Blocking Current VTM Maximum On State Voltage IH VTM on state IRRM at VRRM IH Quadrant 3 MainTerminal 2 Quadrant 1 MainTerminal 2 + IH off state +V oltage IDRM at VDRM VTM Holding Current Quadrant Definitions for a Triac MT2 POSITIVE (Positive Half Cycle) + (+) MT2 (+) MT2 Quadrant II Quadrant I (+) IGT GATE ( ) IGT GATE MT1 MT1 REF REF ( ) MT2 ( ) MT2 IGT Quadrant III +I GT Quadrant IV (+) IGT GATE ( ) IGT GATE MT1 MT1 REF REF MT2 NEGATIVE (Negative Half Cycle) All polarities are referenced to MT1. With in phase signals (using standard AC lines) quadrants I and III are used. (c) 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 08/30/17 Thyristors Surface Mount - 600V - 800V > MC4DCM, MAC4DCN Figure 2. On-State Power Dissipation Figure 1. Typical RMS Current Derating Figure 4. Transient Thermal Response 100 TYPICAL @ TJ = 25C MAXIMUM @ JT= 125C 10 MAXIMUM @ JT= 25C 1.0 0.1 0 1 .0 2 .0 3 .0 4.0 5.0 VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) Figure 5. Typical Gate Trigger Current vs, Junction Temperature r(t), TRANSIENT RESISTANCE (NORMALIZED) IT, INSTANTANEOUS ON-STATE CURRENT (AMPS) Figure 3. On-State Characteristics 1.0 0.1 Z JC(t) = R JC(t) r(t) 0.01 0.1 1.0 10 100 1000 10 k t, TIME (ms) Figure 6. Typical Gate Trigger Voltage vs. Junction Temperature (c) 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 08/30/17 Thyristors Surface Mount - 600V - 800V > MC4DCM, MAC4DCN Figure 7. Typical Holding Current vs. Junction Temperature Figure 8. Typical Latching Current vs.Junction Temperature Figure 9. Exponential Static dv/dt vs. Gate-MT1 Resistance, MT2(+) Figure 10. Exponential Static dv/dt vs. Gate-MT1 Resistance, MT2(-) Figure 11. Exponential Static dv/dt vs. Peak Voltage, MT2(+) Figure 9. Exponential Static dv/dt vs. Peak Voltage, MT2(-) (c) 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 08/30/17 Thyristors Surface Mount - 600V - 800V > MC4DCM, MAC4DCN Figure 13. Typical Exponential Static dv/dt vs.Junction Temperature, MT2(+) Figure 13. Typical Exponential Static dv/dt vs.Junction Temperature, MT2(-) 10 K GATE OPEN STATIC dv/dt (V/ s) 8.0 K VPK = 400 V 6.0 K 600 V 4.0 K 800 V 2.0 K 0 100 105 110 115 125 120 TJ, JUNCTION TEMPERATURE ( C) Figure 15. Critical Rate of Rise of Commutating Voltage Figure 16. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt) LL 200 VRMS ADJUST FOR ITM, 60 Hz VAC MEASURE I TRIGGER CHARGE CONTROL CL TRIGGER CONTROL CHARGE 1N4007 + 200 V MT2 1N914 51 G MT1 Note: Component values are for verification of rated (di/dt)c. See AN1048 for additional information (c) 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 08/30/17 Thyristors Surface Mount - 600V - 800V > MC4DCM, MAC4DCN Dimensions Soldering Footprint DPAK CASE 369C ISSUE O 6.20 0.244 C B V 2.58 0.101 SEATING PLANE T E R 5.80 0.228 4 12 3 U K F SCALE 3:1 2 PL 0.13 (0.005) M T Inches Millimeters Min Max Min Max A 0.235 0.245 5.97 6.35 B 0.250 0.265 6.35 6.73 C 0.086 0.094 2.19 2.38 D 0.027 0.035 0.69 0.88 E 0.018 0.023 0.46 0.58 F 0.037 0.045 0.94 1.14 G mm inches H D Dim 6.172 0.243 J L G 1.6 0.063 Z A S 3.0 0.118 0.090 BSC 2.29 BSC H 0.034 0.040 0.87 1.01 J 0.018 0.023 0.46 0.58 K 0.350 0.380 8.89 9.65 R 0.180 0.215 4.45 5.45 S 0.025 0.040 0.63 1.01 V 0.035 0.050 0.89 1.27 Z 0.155 --- 3.93 --- 1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2.CONTROLLING DIMENSION: INCH. STYLE 6: PIN 1. MT1 2.MT2 3.GATE 4.MT2 (c) 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 08/30/17 Thyristors Surface Mount - 600V - 800V > MC4DCM, MAC4DCN Dimensions Part Marking System DPAK CASE 369C ISSUE O 1 2 E R 12 3 1 K J F G Dim D 0.13 (0.005) M G= T Inches Millimeters Max Min Max A 0.235 0.245 5.97 6.35 B 0.250 0.265 6.35 6.73 C 0.086 0.094 2.19 2.38 D 0.027 0.035 0.69 0.88 E 0.018 0.023 0.46 0.58 F 0.037 0.045 0.94 1.14 0.090 BSC 0.034 0.040 0.87 1.01 J 0.018 0.023 0.46 0.58 K 0.350 0.380 8.89 9.65 R 0.180 0.215 4.45 5.45 S 0.025 0.040 0.63 1.01 V 0.035 0.050 0.89 1.27 Z 0.155 --- 3.93 --- 1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. Y ear = Work Week = Device Code x= M or N Pb Free Package Pin Assignment 1 Main Terminal 1 2 Main Terminal 2 3 Gate 4 Main Terminal 2 Ordering Information 2.29 BSC H YWW AC 4DCxG 3 Y= WW AC4DCx Min G 2 H 3 PL YWW AC 4DCxG DPAK 3 CASE 369D STYLE 6 Z A T SEATING PLANE DPAK CASE 369C STYLE 6 4 4 S 3 C B V 4 Device Package Type Package Shipping MAC4DCM-001 DPAK-3 369D 75 Units / Rail MAC4DCM-1G DPAK-3 (Pb-Free) 369D 75 Units / Rail MAC4DCMT4 DPAK-3 369C 2500 / Tape & Reel MAC4DCMT4G DPAK-3 (Pb-Free) 369C 2500 / Tape & Reel MAC4DCN-001 DPAK-3 369D 75 Units / Rail MAC4DCN-1G DPAK-3 (Pb-Free) 369D 75 Units / Rail MAC4DCNT4 DPAK-3 369C 2500 / Tape & Reel MAC4DCNT4G DPAK-3 (Pb-Free) 369C 2500 / Tape & Reel 2.CONTROLLING DIMENSION: INCH. STYLE 6: PIN 1. MT1 2.MT2 3.GATE 4.MT2 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at: www.littelfuse.com/disclaimer-electronics (c) 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 08/30/17