V er s io n 2.1 a , 1 1 Ja n 2 01 2 (R) N e v e r s t o p t h i n k i n g . 3 CoolSET(R)-F3R80 ICE3BR2280JZ Revision History: 2012-1-11 Datasheet Version 2.1a Previous Version: 2.1 Page Subjects (major changes since last revision) 30 revise outline dimension for PG-DIP-7 3, 7, 17, 18 revise typo For questions on technology, delivery and prices please contact the Infineon Technologies Offices in Germany or the Infineon Technologies Companies and Representatives worldwide: see our webpage at http:// www.infineon.com CoolMOS(R), CoolSET(R) are trademarks of Infineon Technologies AG. Edition 2012-1-11 Published by Infineon Technologies AG 81726 Munchen, Germany (c) Infineon Technologies AG 1/11/12. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie"). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. (R) ICE3BR2280JZ Off-Line SMPS Current Mode Controller with integrated 800V CoolMOS(R) and Startup cell (brownout & frequency jitter) in DIP-7 Product Highlights * 800V avalanche rugged CoolMOS(R) with startup cell * Active Burst Mode to reach the lowest Standby Power <100mW * Selectable entry and exit burst mode level * Adjustable blanking Window for high load jumps * Frequency jitter and soft driving for low EMI * Adjustable brownout feature * Auto Restart protection for over load, over temperature, over voltage and external protection enable function * Pb-free lead plating; RoHS compliant PG-DIP7 Features * * * * * * * * * * * * * * 800V avalanche rugged CoolMOS(R) with Startup Cell Description Active Burst Mode for lowest Standby Power The ICE3BR2280JZ (CoolSET(R)-F3R80) is an enhanced Selectable entry and exit burst mode level 800V MOSFET version of ICE3BRxx65J (CoolSET(R)-F3R 65kHz internally fixed switching frequency with 650V) in DIP-7 package. The PWM controller is based on jittering feature F3R 650V with some new and enhanced features. In Auto Restart Protection for Over load, Open Loop, particular it is a device running at 65KHz, implemented VCC Under voltage & Over voltage and Over with brownout features, installing 800V CoolMOS(R) with temperature startup cell and packaged into DIP-7. It targets for the low External auto-restart enable pin power SMPS with increased MOSFET voltage margin Over temperature protection with 50C hysteresis requirement such as Off-Line battery adapters, DVD R/W, Built-in 10ms Soft Start DVD Combi, Blue ray, set top box, auxiliary power supply Built-in 20ms and extendable blanking time for short for PC and server, etc. In summary, the CoolSET(R) F3R80 duration peak power provides good voltage margin of MOSFET, lowest Propagation delay compensation for both maximum standby power, selectable burst level, reduced output load and burst mode ripple during burst mode, reliable output with brownout Adjustable brownout feature feature, accurate maximum power control for both Overall tolerance of Current Limiting < 5% maximum power and burst power, low EMI with frequency BiCMOS technology for low power consumption and jittering and soft gate drive, built-in and flexible wide VCC voltage range protections, etc. Therefore, CoolSET(R) F3R80 is a Soft gate drive with 50W turn on resistor Typical Application + CBulk 85 ... 270 VAC Converter DC Output Snubber - CVCC VCC Drain Startup Cell Power Management PWM Controller Current Mode CS Precise Low Tolerance Peak Current Limitation CoolMOS(R) RSense FBB RBO1 BBA Control Unit Active Burst Mode CoolSET(R)-F3R80 (Brownout & Jitter) GND Brownout mode Auto Restart Mode RBO2 Type Package Marking VDS FOSC RDSon1) 230VAC 15%2) 85-265 VAC2) ICE3BR2280JZ PG-DIP-7 3BR2280JZ 800V 65kHz 2.26 43W 28W 1) typ @ T=25C 2) Calculated maximum input power rating at Ta=50C, Ti=125C and without copper area as heat sink. Version 2.1a 3 11 Jan 2012 CoolSET(R)-F3R80 ICE3BR2280JZ Table of Contents Page 1 1.1 1.2 Pin Configuration and Functionality . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6 Pin Configuration with PG-DIP-7 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6 Pin Functionality . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6 2 Representative Blockdiagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 3 3.1 3.2 3.3 3.3.1 3.3.2 3.4 3.5 3.5.1 3.5.2 3.5.3 3.6 3.6.1 3.6.2 3.7 3.7.1 3.7.2 3.7.2.1 3.7.2.2 3.7.2.3 3.7.2.4 3.7.3 3.7.3.1 3.7.3.2 3.7.4 3.7.5 Functional Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 Power Management . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 Improved Current Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9 PWM-OP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 PWM-Comparator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 Startup Phase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 PWM Section . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Oscillator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 PWM-Latch FF1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Gate Driver . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Current Limiting . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Leading Edge Blanking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Propagation Delay Compensation (patented) . . . . . . . . . . . . . . . . . . . . .13 Control Unit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Basic and Extendable Blanking Mode . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Active Burst Mode (patented) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Selectable burst entry level . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Entering Active Burst Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 Working in Active Burst Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 Leaving Active Burst Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 Protection Modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17 Vcc OVP, OTP, external protection enable and Vcc under voltage . . .18 Over load, open loop protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18 Brownout Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .19 Action sequence at BBA pin . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20 4 4.1 4.2 4.3 4.3.1 4.3.2 4.3.3 4.3.4 4.3.5 4.3.6 4.3.7 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .22 Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .22 Operating Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .23 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .23 Supply Section . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .23 Internal Voltage Reference . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .24 PWM Section . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .24 Soft Start time . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .24 Control Unit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .25 Current Limiting . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .26 CoolMOS(R) Section . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .26 Version 2.1a 4 11 Jan 2012 CoolSET(R)-F3R80 ICE3BR2280JZ 5 CoolMOS(R) Performance Characteristic . . . . . . . . . . . . . . . . . . . . . . . . . .27 6 Input Power Curve . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .29 7 Outline Dimension . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .30 8 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .31 9 Schematic for recommended PCB layout . . . . . . . . . . . . . . . . . . . . . . . .32 Version 2.1a 5 11 Jan 2012 CoolSET(R)-F3R80 ICE3BR2280JZ Pin Configuration and Functionality 1 Pin Configuration and Functionality 1.1 Pin Configuration with PG-DIP-7 Pin Symbol 1.2 BBA (Brownout, extended Blanking time & Autorestart enable) The BBA pin combines the functions of brownout, extendable blanking time for over load protection and the external auto-restart enable. The brownout feature is to stop the switching pulse when the input voltage is dropped to a preset low level. The extendable blanking time function is to extend the built-in 20 ms blanking time for over load protection by adding an external capacitor to ground. The external auto-restart enable function is an external access to stop the gate switching and force the IC to enter auto-restart mode. It is triggered by pulling the pin voltage to less than 0.4V. Function 1 BBA Brownout, extended Blanking time & Auto-restart enable 2 FBB Feedback & Burst entry/exit control 3 CS Current Sense/ 800V CoolMOS(R) Source 4 n.c. not connected 5 Drain 6 - 7 VCC Controller Supply Voltage 8 GND Controller Ground 800V CoolMOS(R) Drain (no pin) FBB (Feedback & Burst entry control) The FBB pin combines the feedback function and the burst entry/exit control. The regulation information is provided by the FBB pin to the internal Protection Unit and the internal PWM-Comparator to control the duty cycle. The FBB-signal is the only control signal in case of light load at the Active Burst Mode. The burst entry/ exit control provides an access to select the entry/exit burst mode level. Package PG-DIP-7 BBA 1 8 GND FBB 2 7 VCC CS 3 n.c. 4 Pin Functionality CS (Current Sense) The Current Sense pin senses the voltage developed on the shunt resistor inserted in the source of the integrated CoolMOS(R). If CS reaches the internal threshold of the Current Limit Comparator, the Driver output is immediately switched off. Furthermore the current information is provided for the PWMComparator to realize the Current Mode. Drain (Drain of integrated CoolMOS(R)) Pin Drain is the connection to the Drain of the integrated CoolMOS(R). 5 Drain VCC (Power Supply) The VCC pin is the positive supply of the IC. The operating range is between 10.5V and 25V. Figure 1 Pin Configuration PG-DIP-7 (top view) GND (Ground) The GND pin is the ground of the controller. Version 2.1a 6 11 Jan 2012 CoolSET(R)-F3R80 ICE3BR2280JZ Representative Blockdiagram 2 Figure 2 Representative Blockdiagram Representative Blockdiagram Version 2.1a 7 11 Jan 2012 CoolSET(R)-F3R80 ICE3BR2280JZ Functional Description 3 Functional Description CoolSET(R) F3R80 is a complete solution for the low power SMPS application. All values which are used in the functional description are typical values. For calculating the worst cases the min/max values which can be found in section 4 Electrical Characteristics have to be considered. 3.1 3.2 Introduction Drain CoolSET(R)-F3R80 brownout and jitter 800V version (ICE3BR2280JZ) is the enhanced version of the CoolSET(R)-F3R 650V version (ICE3BRxx65J). It is particular good for high voltage margin low power SMPS application such as auxiliary power supply for PC and server. The major characteristics are that the IC is developed with 800V CoolMOS(R) with start up cell, having adjustable brownout feature, running at 65KHz switching frequency and packed in DIP-7 package. It is derived from F3R 650V version. Thus most of the good features are retained. Besides, it includes some enhanced features and new features. The retained good features include BiCMOS technology to reduce power consumption and increase the Vcc voltage range, cycle by cycle current mode control, built-in 10ms soft start to reduce the stress of switching elements during start up, built-in 20ms and extended blanking time for short period of peak power before entering protection, active burst mode for lowest standby power and propagation delay compensation for close power limit between high line and low line, frequency jittering for low EMI performance, the built-in auto-restart mode protections for open loop, over load, Vcc OVP, Vcc under voltage, etc. and also the most flexible external auto-restart enable, etc. The enhanced features include narrowing the feedback voltage swing from 0.5V to 0.3V during burst mode so that the output voltage ripple can be reduced by 40%, reduction of the fast voltage fall time of the MOSFET by increasing the soft turn-on time and addition of 50W turn-on resistor, faster start up time by optimizing the Vcc capacitor to 10uF and over temperature protection with 50C hysteresis. The new features include adjustable brownout for reliable output performance, selectable entry and exit burst mode so that smaller entry/exit power to burst mode or even no burst mode is possible and the propagation delay compensation for burst mode so that the entry/exit burst mode power is close between high line and low line. In summary, the CoolSET(R) F3R80 provides good voltage margin of MOSFET, lowest standby power, flexible burst level, reduced output ripple during burst mode, reliable output with brownout feature, accurate power limit for both maximum power and burst power, low EMI with frequency jittering and soft gate drive, built-in and flexible protections, etc. Therefore, Version 2.1a Power Management VCC Startup Cell CoolMOS(R) Power Management Internal Bias Undervoltage Lockout 17V 10.5V Power-Down Reset Voltage Reference 5.0V Auto Restart Mode Soft Start block Figure 3 Active Burst Mode Power Management The Undervoltage Lockout monitors the external supply voltage VVCC. When the SMPS is plugged to the main line the internal Startup Cell is biased and starts to charge the external capacitor CVCC which is connected to the VCC pin. This VCC charge current is controlled to 0.9mA by the Startup Cell. When the VVCC exceeds the on-threshold VCCon=17V the bias circuit are switched on. Then the Startup Cell is switched off by the Undervoltage Lockout and therefore no power losses present due to the connection of the Startup Cell to the Drain voltage. To avoid uncontrolled ringing at switch-on, a hysteresis start up voltage is implemented. The switch-off of the controller can only take place when VVCC falls below 10.5V after normal operation was entered. The maximum current consumption before the controller is activated is about 200mA. When VVCC falls below the off-threshold VCCoff=10.5V, the bias circuit is switched off and the soft start counter is reset. Thus it ensures that at every startup cycle the soft start starts at zero. The internal bias circuit is switched off if Auto Restart Mode is entered. The current consumption is then reduced to 320mA. 8 11 Jan 2012 CoolSET(R)-F3R80 ICE3BR2280JZ Functional Description Once the malfunction condition is removed, this block will then turn back on. The recovery from Auto Restart Mode does not require re-cycling the AC line. When Active Burst Mode is entered, the internal Bias is switched off most of the time but the Voltage Reference is kept alive in order to reduce the current consumption below 620mA. 3.3 In case the amplified current sense signal exceeds the FBB signal the on-time ton of the driver is finished by resetting the PWM-Latch (Figure 5). The primary current is sensed by the external series resistor RSense inserted in the source of the integrated CoolMOS(R). By means of Current Mode regulation, the secondary output voltage is insensitive to the line variations. The current waveform slope will change with the line variation, which controls the duty cycle. The external RSense allows an individual adjustment of the maximum source current of the integrated CoolMOS(R). To improve the Current Mode during light load conditions the amplified current ramp of the PWM-OP is superimposed on a voltage ramp, which is built by the switch T2, the voltage source V1 and a resistor R1 (see Figure 6). Every time the oscillator shuts down for maximum duty cycle limitation the switch T2 is closed by VOSC. When the oscillator triggers the Gate Driver, T2 is opened so that the voltage ramp can start. Improved Current Mode Soft-Start Comparator PWM-Latch FBB C8 R Q Driver S Q 0.6V Soft-Start Comparator PWM OP PWM Comparator FBB x3.25 C8 CS Figure 4 PWM-Latch Oscillator Improved Current Mode VOSC time delay circuit (156ns) Current Mode Current Mode means the duty cycle is controlled by the slope of the primary current. This is done by comparing the FBB signal with the amplified current sense signal. Gate Driver 0.6V 10k X3.25 T2 Amplified Current Signal R1 V1 PWM OP FBB Voltage Ramp 0.6V Figure 6 Driver In case of light load the amplified current ramp is too small to ensure a stable regulation. In that case the Voltage Ramp is a well defined signal for the comparison with the FBB-signal. The duty cycle is then controlled by the slope of the Voltage Ramp. By means of the time delay circuit which is triggered by the inverted VOSC signal, the Gate Driver is switched-off until it reaches approximately 156ns delay time (Figure 7). It allows the duty cycle to be reduced continuously till 0% by decreasing VFBB below that threshold. t ton t Figure 5 Improved Current Mode Pulse Width Modulation Version 2.1a 9 11 Jan 2012 CoolSET(R)-F3R80 ICE3BR2280JZ Functional Description VOSC 5V RFB max. Duty Cycle Soft-Start Comparator FBB Voltage Ramp PWM-Latch C8 t PWM Comparator 0.6V 0.6V FBB Optocoupler Gate Driver PWM OP t CS X3.25 156ns time delay Improved Current Mode t Figure 7 3.3.1 Light Load Conditions PWM-OP The input of the PWM-OP is applied over the internal leading edge blanking to the external sense resistor RSense connected to pin CS. RSense converts the source current into a sense voltage. The sense voltage is amplified with a gain of 3.25 by PWM OP. The output of the PWM-OP is connected to the voltage source V1. The voltage ramp with the superimposed amplified current signal is fed into the positive inputs of the PWMComparator C8 and the Soft-Start-Comparator (Figure 8). PWM Controlling 3.4 Startup Phase Soft Start counter Soft Start finish 3.3.2 Figure 8 PWM-Comparator The PWM-Comparator compares the sensed current signal of the integrated CoolMOS(R) with the feedback signal VFBB (Figure 8). VFBB is created by an external optocoupler or external transistor in combination with the internal pull-up resistor RFB and provides the load information of the feedback circuitry. When the amplified current signal of the integrated CoolMOS(R) exceeds the signal VFBB the PWM-Comparator switches off the Gate Driver. SoftS Soft Start Soft Start Soft-Start C om parator G ate D river C7 & G7 0.6V x3.25 CS PW M O P Figure 9 Version 2.1a 10 Soft Start 11 Jan 2012 CoolSET(R)-F3R80 ICE3BR2280JZ Functional Description In the Startup Phase, the IC provides a Soft Start period to control the primary current by means of a duty cycle limitation. The Soft Start function is a built-in function and it is controlled by an internal counter. . After the IC is switched on, the VSoftS voltage is controlled such that the voltage is increased stepwisely (32 steps) with the increase of the counts. The Soft Start counter would send a signal to the current sink control in every 300us such that the current sink decrease gradually and the duty ratio of the gate drive increases gradually. The Soft Start will be finished in 10ms (tSoft-Start) after the IC is switched on. At the end of the Soft Start period, the current sink is switched off. Within the soft start period, the duty cycle is increasing from zero to maximum gradually (see Figure 12). V SoftS tSoft-Start V SOFTS32 V SoftS V SoftS2 V SoftS1 t Gate Driver t Figure 10 Soft Start Phase Figure 12 When the VVCC exceeds the on-threshold voltage, the IC starts the Soft Start mode (Figure 10). The function is realized by an internal Soft Start resistor, an current sink and a counter. And the amplitude of the current sink is controlled by the counter (Figure 11). Gate drive signal under Soft-Start Phase In addition to Start-Up, Soft-Start is also activated at each restart attempt during Auto Restart. V S o ftS t S o ft-S ta rt V S O FTS 3 2 5V R SoftS V FB SoftS t 4.5V Soft Start 32I Counter 8I 4I 2I VOUT I t V OUT t S ta rt-U p t Figure 11 Soft Start Circuit Version 2.1a Figure 13 11 Start Up Phase 11 Jan 2012 CoolSET(R)-F3R80 ICE3BR2280JZ Functional Description 3.5.2 PWM-Latch FF1 The output of the oscillator block provides continuous pulse to the PWM-Latch which turns on/off the integrated CoolMOS(R). After the PWM-Latch is set, it is reset by the PWM comparator, the Soft Start comparator or the Current -Limit comparator. When it is in reset mode, the output of the driver is shut down immediately. The Start-Up time tStart-Up before the converter output voltage VOUT is settled, must be shorter than the SoftStart Phase tSoft-Start (Figure 13). By means of Soft-Start there is an effective minimization of current and voltage stresses on the integrated CoolMOS(R), the clamp circuit and the output rectifier and it helps to prevent saturation of the transformer during Start-Up. 3.5 PWM Section 3.5.3 0.75 Gate Driver VCC PWM Section Oscillator PWM-Latch 1 Duty Cycle max Clock 50 Frequency Jitter Gate CoolMOS(R) Soft Start Block FF1 Soft Start Comparator 1 G8 PWM Comparator Gate Driver S R Q Gate Driver & Figure 15 G9 The driver-stage is optimized to minimize EMI and to provide high circuit efficiency. This is done by reducing the switch on slope when exceeding the integrated CoolMOS(R) threshold. This is achieved by a slope control of the rising edge at the driver's output (Figure 16) and adding a 50W gate turn on resistor (Figure 15). Thus the leading switch on spike is minimized. Current Limiting CoolMOS(R) Gate Figure 14 PWM Section Block 3.5.1 Oscillator The oscillator generates a fixed frequency of 65KHz with frequency jittering of 4% (which is 2.6KHz) at a jittering period of 4ms. A capacitor, a current source and current sink which determine the frequency are integrated. The charging and discharging current of the implemented oscillator capacitor are internally trimmed in order to achieve a very accurate switching frequency. The ratio of controlled charge to discharge current is adjusted to reach a maximum duty cycle limitation of Dmax=0.75. Once the Soft Start period is over and when the IC goes into normal operating mode, the switching frequency of the clock is varied by the control signal from the Soft Start block. Then the switching frequency is varied in range of 65KHz 2.6KHz at period of 4ms. Version 2.1a Gate Driver (internal) VGate typ. t = 160ns 4.6V t Figure 16 Gate Rising Slope Furthermore the driver circuit is designed to eliminate cross conduction of the output stage. 12 11 Jan 2012 CoolSET(R)-F3R80 ICE3BR2280JZ Functional Description During power up, when VCC is below the undervoltage lockout threshold VVCCoff, the output of the Gate Driver is set to low in order to disable power transfer to the secondary side. activated, the current limiting is reduced to Vcsth_burst. This voltage level determines the maximum power level in Active Burst Mode. 3.6 3.6.1 Current Limiting Leading Edge Blanking VSense PWM Latch FF1 Vcsth Current Limiting tLEB = 220ns/180ns Propagation-Delay Compensation Vcsth LEB 220ns C10 S4 t PWM-OP LEB 180ns & C12 G10 Figure 18 Whenever the integrated CoolMOS(R) is switched on, a leading edge spike is generated due to the primaryside capacitances and reverse recovery time of the secondary-side rectifier. This spike can cause the gate drive to switch off unintentionally. In order to avoid a premature termination of the switching pulse, this spike is blanked out with a time constant of tLEB = 220ns for normal load and tLEB = 180ns for burst mode. VCSth_burst Propagation-Delay Compensation-Burst Active Burst Mode or G13 VFB_burst 10k C5 Leading Edge Blanking 1pF D1 3.6.2 FBB Figure 17 CS Current Limiting Block There is a cycle by cycle peak current limiting operation realized by the Current-Limit comparator C10. The source current of the integrated CoolMOS(R) is sensed via an external sense resistor RSense. By means of RSense the source current is transformed to a sense voltage VSense which is fed into the pin CS. If the voltage VSense exceeds the internal threshold voltage Vcsth, the comparator C10 immediately turns off the gate drive by resetting the PWM Latch FF1. A Propagation Delay Compensation is added to support the immediate shut down of the integrated CoolMOS(R) with very short propagation delay. Thus the influence of the AC input voltage on the maximum output power can be reduced to minimal. This compensation applies to both the peak load and burst mode. In order to prevent the current limit from distortions caused by leading edge spikes, a Leading Edge Blanking (LEB) is integrated in the current sense path for the comparators C10, C12 and the PWM-OP. The output of comparator C12 is activated by the Gate G10 if Active Burst Mode is entered. When it is Version 2.1a 13 Propagation Delay Compensation (patented) In case of overcurrent detection, there is always propagation delay to switch off the integrated CoolMOS(R). An overshoot of the peak current Ipeak is induced to the delay, which depends on the ratio of dI/ dt of the peak current (Figure 19). Signal2 ISense Ipeak2 Ipeak1 ILimit Signal1 tPropagation Delay IOvershoot2 IOvershoot1 t Figure 19 Current Limiting The overshoot of Signal2 is larger than of Signal1 due to the steeper rising waveform. This change in the slope is depending on the AC input voltage. Propagation Delay Compensation is integrated to 11 Jan 2012 CoolSET(R)-F3R80 ICE3BR2280JZ Functional Description reduce the overshoot due to dI/dt of the rising primary current. Thus the propagation delay time between exceeding the current sense threshold Vcsth and the switching off of the integrated CoolMOS(R) is compensated over temperature within a wide input range. Current Limiting is then very accurate. For example, Ipeak = 0.5A with RSense = 2. The current sense threshold is set to a static voltage level Vcsth=1V without Propagation Delay Compensation. A current ramp of dI/dt = 0.4A/s, or dVSense/dt = 0.8V/s, and a propagation delay time of tPropagation Delay =180ns leads to an Ipeak overshoot of 14.4%. With the propagation delay compensation, the overshoot is only around 2% (Figure 20). with compensation Similarly, the same concept of propagation delay compensation is also implemented in burst mode with reduced level, Vcsth_burst (Figure 17). With this implementation, the entry and exit burst mode power can be very close between low line and high line input voltage. 3.7 The Control Unit contains the functions for Active Burst Mode and Auto Restart Mode. The Active Burst Mode and the Auto Restart Mode both have 20ms internal blanking time. For the over load Auto Restart Mode, the 20ms blanking time can be further extended by adding an external capacitor at BBA pin. With the blanking time, the IC avoids entering into those two modes accidentally. Those buffer time is very useful for the application which works in short duration of peak power occasionally. without compensation V 1,3 1,25 1,2 VSense Control Unit 3.7.1 1,15 Basic and Extendable Blanking Mode 1,1 5.0V 1,05 1 Auto Restart Mode 0,95 0,9 0 0,2 0,4 0,6 0,8 1 1,2 1,4 1,6 1,8 dVSense dt Figure 20 Ichg_EB V s 2 S1 Overcurrent Shutdown 4.5V C11 BBA RBO2 # CBK The Propagation Delay Compensation is realized by means of a dynamic threshold voltage Vcsth (Figure 21). In case of a steeper slope the switch off of the driver is earlier to compensate the delay. V OSC Spike Blanking 30us Counter 500 CT1 & G5 C3 0.9V S2 max. Duty Cycle FBB C4 off time V Sense 4.5V Propagation Delay t Figure 22 Signal2 t Figure 21 Dynamic Voltage Threshold Vcsth Version 2.1a Control Unit Basic and Extendable Blanking Mode There are 2 kinds of Blanking mode; basic mode and the extendable mode. The basic mode is a built-in 20ms blanking time while the extendable mode can extend this blanking time by connecting an external capacitor to the BBA pin. For the extendable mode, the gate G5 remains blocked even though the 20ms blanking time is reached. After reaching the 20ms blanking time the counter is activated and the switch S1 is turned on to charge the voltage of BBA pin by the constant current source, Ichg_EB. When the voltage of BBA pin hits 4.5V, which is sensed by comparator C11, the counter will increase the counter by 1. Then it V csth Signal1 20ms Blanking Time 14 11 Jan 2012 CoolSET(R)-F3R80 ICE3BR2280JZ Functional Description switches off the switch S1 and turns on the switch S2. The voltage at BBA pin will be discharged through a 500W resistor. When the voltage drops to 0.9V which is sensed by comparator C3, the switch S2 will be turned off and the switch S1 will be turned on. Then the constant current Ichg_EB will charge the CBK capacitor again. When the voltage at BBA hits 4.5V which is sensed by comparator C11, the counter will increase the count to 2. The process repeats until it reaches total count of 256 (Figure 23). Then the counter will release a high output signal. When the AND gate G5 detects both high signals at the inputs, it will activate the 30ms spike blanking circuit and finally the auto-restart mode will be activated. Most of the burst mode design in the market will provide a fixed entry burst mode level which is a ratio to the maximum power of the design. F3R80 provides a more flexible level which can be selected externally. The provision also includes not entering burst mode. Propagation delay is the major contributor for the power control variation for DCM flyback converter. It is proved to be effective in the maximum power control. F3R80 also apply the same concept in the burst mode. Therefore, the entry and exit burst mode power is also finely controlled during burst mode. The feedback control swing during burst mode will affect the output ripple voltage directly. F3R80 reduces the swing from 0.5V to 0.3V. Therefore, it would have around 40% improvement for the output ripple. 256 counts 4.5V Current Limiting CS Vcsth_burst VBBA normal operation Figure 23 0.9V extended blanking time auto restart C12 G10 & FF1 Internal Bias Burst detect and adjust Waveform at extended blanking time VFB_burst C5 For example, if CBK=0.1mF, Ichg_EB=720mA Extended blanking time = 256*(CBK*(4.5V-0.9V)/Ichg_EB + CBK*500*ln(4.5/0.9)) = 148.6ms Total blanking time = 20ms+ 148.6ms =168.6ms FBB CFB If there is a resistor RBO2 connected to BBA pin, the effective charging current will be reduced. The blanking time will be increased. For example, if CBK=0.1mF, Ichg_EB=720mA, RBO2=12.8KW, Ichg_EB'=Ichg_EB-(4.5V+0.9V)/(2*RBO2)=509 mA C13 Active Burst Mode 4.0V 3.5V C6a Extended blanking time = 256*(CBK*(4.5V-0.9V)/Ichg_EB' + CBK*500*ln(4.5/0.9)) = 201.6ms Total blanking time = 20ms+201.6 = 221.6ms where Ichg_EB'=net charging current to CBK C6b 3.2V Figure 24 Note: The above calculation does not include the effect of the brownout circuit where there is extra biasing current flowing from the input. That means the extended blanking time will be shortened with the line voltage change if brownout circuit is implemented. & G11 Control Unit Active Burst Mode The Active Burst Mode is located in the Control Unit. Figure 24 shows the related components. 3.7.2.1 Selectable burst entry level The burst mode entry level can be selected by changing the different capacitor CFB at FBB pin. There are 4 levels to be selected with different capacitor which are targeted for 10%, 6.67%, 4.38% and 0% of the maximum input power. At the same time, the exit burst level are targeted to 20%, 13.3%, 9.6% and 0% of the maximum power accordingly. The corresponding capacitance range is from 6.8nF to 100pF. The below table is the recommended capacitance range for the entry and exit level with the CFB capacitor. 3.7.2 Active Burst Mode (patented) To increase the efficiency of the system at light load, the most effective way is to operate at burst mode. Starting from CoolSET(R) F3, the IC has been employing the active burst mode and it can achieve the lowest standby power. F3R80 adopts the same concept with some more innovative improvements to the feature. It includes the adjustable entry burst level, close power control between high line and low line and the smaller output ripple during burst mode. Version 2.1a 20ms Blanking Time 15 11 Jan 2012 CoolSET(R)-F3R80 ICE3BR2280JZ Functional Description Entry level CFB Exit level % of Pin_max VFB_burst % of Pin_max Vcsth_burst >=6.8nF (5%,X7R) 10% 1.60V 20% 0.45V 1nF~2.2nF (1%,COG) 6.67% 1.42V 13.3% 0.37V 220pF~470pF (1%,COG) 4.38% 1.27V 9.6% 0.31V 0% never 0% always <=100pF (1%,COG) falls below VFB_burst, it starts to count. When the counter reaches 20ms and FBB signal is still below VFB_burst, the system enters the Active Burst Mode. This time window prevents a sudden entering into the Active Burst Mode due to large load jumps. After entering Active Burst Mode, a burst flag is set and the internal bias is switched off in order to reduce the current consumption of the IC to about 620uA. It needs the application to enforce the VCC voltage above the Undervoltage Lockout level of 10.5V such that the Startup Cell will not be switched on accidentally. Or otherwise the power loss will increase drastically. The minimum VCC level during Active Burst Mode depends on the load condition and the application. The lowest VCC level is reached at no load condition. The selection is at the 1st 1ms of the UVLO "ON" (Vcc > 17V) during the 1st start up but it does not detect in the subsequent re-start due to auto-restart protection. In case there is protection triggered such as auto restart enable or brownout before starts up, the detection will be held until the protection is removed. When the Vcc reaches the UVLO "ON" in the 1st start up, the capacitor CFB at FBB pin is charged by a 5V voltage source through the RFB resistor. When the voltage at FBB pin hits 4.5V, the FF4 will be set, the switch S9 is turned "ON" and the counter will increase by 1. Then the CFB is discharged through a 500W resistor. After reaching 0.5V, the FF4 is reset and the switch S9 is turned "OFF". Then the CFB capacitor is charged by the 5V voltage source again until it reaches 4.5V. The process repeats until the end of 1ms. Then the detection is ended. After that, the total number of count in the counter is compared and the VFB-burst and the Vcs_burst are selected accordingly (Figure 25). VFB_burst VCSth_burst 5V 3.7.2.3 Working in Active Burst Mode After entering the Active Burst Mode, the FBB voltage rises as VOUT starts to decrease, which is due to the inactive PWM section. The comparator C6a monitors the FBB signal. If the voltage level is larger than 3.5V, the internal circuit will be activated; the Internal Bias circuit resumes and starts to provide switching pulse. In Active Burst Mode the gate G10 is released and the current limit is reduced to Vcsth_burst (Figure 2 and 24). In one hand, it can reduce the conduction loss and the other hand, it can reduce the audible noise. If the load at VOUT is still kept unchanged, the FBB signal will drop to 3.2V. At this level the C6b deactivates the internal circuit again by switching off the Internal Bias. The gate G11 is active again as the burst flag is set after entering Active Burst Mode. In Active Burst Mode, the FBB voltage is changing like a saw tooth between 3.2V and 3.5V (Figure 26). 3.7.2.4 Leaving Active Burst Mode The FBB voltage will increase immediately if there is a high load jump. This is observed by the comparator C13 (Figure 24). Since the current limit is reduced to 31%~45% of the maximum current during active burst mode, it needs a certain load jump to rise the FBB signal to exceed 4.0V. At that time the comparator C5 resets the Active Burst Mode control which in turn blocks the comparator C12 by the gate G10. The maximum current can then be resumed to stabilize VOUT. Comparator counter logic UVLO RFB 4.5V FBB C19 S Q FF4 CFB 500 0.5V UVLO during 1st startup C20 R 1ms timer S9 Control Unit Figure 25 Entry burst mode detection 3.7.2.2 Entering Active Burst Mode The FBB signal is kept monitoring by the comparator C5 (Figure 24). During normal operation, the internal blanking time counter is reset to 0. When FBB signal Version 2.1a 16 11 Jan 2012 CoolSET(R)-F3R80 ICE3BR2280JZ Functional Description VFBB Entering Active Burst Mode 4.0V 3.5V 3.2V detect and soft start switching pulses maintained. If the fault persists, it would continue the auto-restart mode. However, if the fault is removed, it can release to normal operation only at the even number auto restart cycle (Figure 27). Leaving Active Burst Mode VFB_burst VVCC Blanking Timer Fault detected No detect Startup and detect No detect 17V t 20ms Blanking Time 10.5V VCS VCS t t t Vcsth Figure 27 Current limit level during Active Burst Mode Non switch auto restart mode is similar to odd skip auto restart mode except the start up switching pulses are also suppressed at the even number of the restart cycle. The detection of fault still remains at the even number of the restart cycle. When the fault is removed, the IC will resume to normal operation at the even number of the restart cycle (Figure 28). Vcsth_burst VVCC t 10.5V IVCC Odd skip auto restart waveform VVCC t Fault detected No detect Startup and detect No detect 17V 3.4mA 10.5V VCS 620uA VOUT t No switching t t Figure 28 The main purpose of the odd skip auto restart is to extend the restart time such that the power loss during auto restart protection can be reduced. This feature is particularly good for smaller Vcc capacitor where the restart time is shorter. t Figure 26 Signals in Active Burst Mode 3.7.3 Protection Modes The IC provides Auto Restart mode as the major protection feature. Auto Restart mode can prevent the SMPS from destructive states. There are 3 kinds of auto restart mode; normal auto restart mode, odd skip auto restart mode and non switch auto restart mode. Odd skip auto restart mode is that there is no detect of fault and no switching pulse for the odd number restart cycle. At the even number of restart cycle the fault Version 2.1a non switch auto restart waveform The following table lists the possible system failures and the corresponding protection modes. 17 VCC Over voltage (1) Odd skip Auto Restart Mode VCC Over voltage (2) Odd skip Auto Restart Mode Over load Odd skip Auto Restart Mode Open Loop Odd skip Auto Restart Mode 11 Jan 2012 CoolSET(R)-F3R80 ICE3BR2280JZ Functional Description VCC Undervoltage Normal Auto Restart Mode Short Optocoupler Normal Auto Restart Mode Over temperature Non switch Auto Restart Mode External protection enable Non switch Auto Restart Mode 3.7.3.1 Vcc OVP, OTP, external protection enable and Vcc under voltage BBA Stop gate drive C9 Autorestart Enable Signal TAE base pin of an external transistor, TAE at the BBA pin. When this function is enabled, it will enter into the non switch auto restart mode. The gate drive is stopped and there is no switching pulse before it is recovered (Figure 29). The Vcc undervoltage and short opto-coupler will go into the normal auto restart mode inherently. In case of VCC undervoltage, the Vcc voltage drops indefinitely. When it drops below the Vcc under voltage lock out "OFF" voltage (10.5V), the IC will turn off the IC and the startup cell will turn on again. Then the Vcc voltage will be charged up to UVLO "ON" voltage (17V) and the IC turns on again provided the startup cell charge up current is not drained by the fault. If the fault is not removed, the Vcc will continue to drop until it hits UVLO "OFF" voltage and the restart cycle repeats. Short Optocoupler can lead to Vcc undervoltage because once the opto-coupler (transistor side) is shorted, the feedback voltage will drop to zero and there will be no switching pulse. Then the Vcc voltage will drop same as the Vcc undervoltage. 0.4V Auto Restart Mode Reset VVCC < 10.5V Thermal Shutdown Tj >130C 25.5V C2 120s blanking time Spike Blanking 30s Auto Restart mode VCC C1 20.5V 4.5V C4 FBB Voltage Reference & 3.7.3.2 G1 Control Unit Vcc OVP, OTP, external protection enable Auto Restart Mode Reset VVCC < 10.5V Ichg_EB There are 2 types of Vcc over voltage protection; Vcc OVP (1) and Vcc OVP (2). The Vcc OVP (1) takes action only during the soft start period. The Vcc OVP (2) takes the action in any conditions. Vcc OVP (1) condition is when VVCC voltage is > 20.5V, VFBB voltage is > 4.5V and during soft start period, the IC enters into odd skip Auto Restart Mode. This condition likely happens during start up at open loop fault. (Figure 29). Vcc OVP (2) condition is when VVCC voltage is > 25.5V, the IC enters into odd skip Auto Restart Mode (Figure 29). The over temperature protection OTP is sensed inside the controller IC. The Thermal Shutdown block keeps on monitoring the junction temperature of the controller. After detecting a junction temperature higher than 130C, the IC will enter into the non switch Auto Restart mode. The F3R80 has also implemented with a 50C hysteresis. That means the IC can only be recovered when the controller junction temperature is dropped 50C lower than the over temperature trigger point (Figure 29). The external auto restart enable feature can provide a flexibility to a customer's self-defined protection feature. This function can be triggered by pulling down the VBBA voltage to < 0.4V. Or it can simply trigger the Version 2.1a Voltage Reference 5.0V softs_period Figure 29 Over load, open loop protection Auto Restart Mode S1 RBO2 CBK BBA # 4.5V C11 counter 500 0.9V C3 Spike Blanking 30us CT1 & G5 S2 FBB C4 4.5V Figure 30 20ms Blanking Time Control Unit Over load, open loop protection In case of Overload or Open Loop, the VFBB voltage exceeds 4.5V which will be observed by comparator C4. Then the built-in blanking time counter starts to count. When it reaches 20ms, the extended blanking time counter CT1 is activated. The switch S2 is turned on and the voltage at the BBA pin will be discharged through 500W resistor. When it drops to 0.9V, the switch S2 is turned off and the Switch S1 is turned on. Then a constant current source Ichg_EB will start to charge up BBA pin. When the voltage hits 4.5V which is monitored by comparator C11, the switch S1 is 18 11 Jan 2012 CoolSET(R)-F3R80 ICE3BR2280JZ Functional Description turned off and the count will increase by 1. Then the switch S2 will turn on again and the voltage will drop to 0.9V and rise to 4.5V again. The count will then increase by 1 again. When the total count reaches 256, the counter CT1 will stop and it will release a high output signal. When both the input signals at AND gate G5 is high, the odd skip Auto Restart Mode is activated after the 30us spike blanking time (Figure 30). The total blanking time depends on the addition of the built-in and the extended blanking time. If there is no CBK capacitor at BBA pin, the count will finish within 0.1ms and the equivalent blanking time is just the builtin time of 20ms. However, if the CBK capacitor is big enough, it can be as long as 1s. If CBK is 0.1uF and Ichg_EB is 720uA, the extendable blanking time is around 148.6ms and the total blanking time is 168.6ms. Since the BBA pin is a multi-function pin, it would share with different functions. The resistor RBO2 from brownout feature application may however affect the extendable blanking time (Figure 30). Thus it should take the RBO2 into the calculation of the extendable blanking time. For example the extended blanking time may be changed from 148.6ms to 201.6ms for without and having the 12.8KW RBO2 resistor. The list below shows one particular CBK, RBO2 vs blanking time. CBK RBO2 Extended blanking time Overall blanking time 0.1uF - 148.6ms 168.6ms 0.1uF 37.5KW 162.8ms 182.8ms 0.1uF 12.8KW 201.6ms 221.6ms release a low signal to the flip flop FF5 and the negative output of FF5 will release a high signal to turn on the switch S3. The constant load LD6 will start to draw constant current Ichg_BO from the BBA pin. That means the brownout mode is default "ON" during the system starts up. Vbulk RBO1 S C14 30s~60s blanking time 0.9V RBO2 Brownout mode G21 BBA Q R FF5 G22 G20 UVLO S3 LD6 Ichg_BO Figure 31 Control Unit Brownout detection circuit Once the system enters the brownout mode, there will be no switching pulse and the IC enters into another type auto-restart mode which is similar to the protection auto-restart mode but the IC will monitor the BBA signal in each restart cycle (Figure 32). Another factor to affect the extended blanking time is the input voltage through the RB01 and RB02. It would, on the contrary, reduce the extended blanking time. VVCC Brownout detected Startup and detect BBA voltage 17V 3.7.4 Brownout Mode When the AC input voltage is removed, the voltage at the bulk capacitor will fall. When it reaches a point that the system is greater than the system allowed maximum power, the system may go into over load protection. However, this kind of protection is not welcome for some of the applications such as auxiliary power for PC/server system because the output is in hiccup mode due to over load protection (auto restart mode). The brownout mode is to eliminate this phenomenon. The IC will sense the input voltage through the bulk capacitor to the BBA pin by 2 potential divider resistors, RBO1 and RBO2 (Figure 31). When the system is powered up, the bulk capacitor and the Vcc capacitor are charged up at the same time. When the Vcc voltage is charged to >7V, the brownout circuit start to operate (Figure 31). Since the UVLO is still at low level as the Vcc voltage does not reach the 17V UVLO "ON" voltage. The NAND gate G20 will Version 2.1a 5s blanking time 10.5V VCS t t Figure 32 Brownout mode waveform The voltage at bulk capacitor Vbulk continues to increase and so is the voltage at BBA. When the BBA voltage reaches 0.9V, the output of OPAMP C14 will become low. Through the inverter gate G21, the "S" input of the flip flop FF5 is changed to high. Then the negative output of FF5 is low. The brownout mode is then "OFF" and the constant current load LD6 is also "OFF" through the turn-off of the S3. The system will 19 11 Jan 2012 CoolSET(R)-F3R80 ICE3BR2280JZ Functional Description turn on with soft start in the coming restart cycle when Vcc reaches the Vcc "ON" voltage 17V. When there is an input voltage drop, the BBA voltage also drops. When the voltage at BBA pin falls below 0.9V, the output of OPAMP C14 is changed to high. The inverter gate G22 will change the high input to low output. Then the NAND gate G22 will have a high output. The negative output of the flip flop FF5 is then become high. The constant load LD6 is "ON" again and the IC enters the brownout mode where the Vcc swings between 10.5V and 17V without any switching pulse. The formula to calculate the RBO1 and RBO2 are as below. Note: The above calculation assumes the tapping point (bulk capacitor) has a stable voltage with no ripple voltage. If there is ripple in the input voltage, it should take the highest voltage for the calculation; VBO_l + ripple voltage. Besides that the low side brownout voltage VBO_l added with the ripple voltage at the tapping point should always be lower than the high side brownout voltage (VBO_h); VBO_h > VBO_l + ripple voltage. Otherwise, the brownout feature cannot work properly. In short, when there is a high load running in system before entering brownout, the input ripple voltage will increase and the brownout voltage will increase (VBO_l = VBO_l + ripple voltage) at the same time. If the VBO_hys is set too small and is close to the ripple voltage, then the brownout feature cannot work properly (VBO_l = VBO_h). RBO1=Vhys/Ichg_BO RBO2=Vref_BO*RBO1/(VBO_l -Vref_BO) If the brownout feature is not needed, it needs to tie the BBA pin to the Vcc pin through a current limiting resistor, 500KW~1MW. The BBA pin cannot be in floating condition. If the brownout feature is disabled with a tie up resistor, there is a limitation of the capacitor CBK at the BBA pin. It is as below. where VBO_l: input brownout voltage (low point); Vhys: input brownout hysteresis voltage; Vref_BO: IC reference voltage for brownout; RBO1 and RBO2: resistors divider from input voltage to BBA pin For example, Ichg_BO=10uA, Vref_BO=0.9V, Case 1: if brownout voltage is 70Vac on and 100Vac off, then brownout voltage, VBO_l=100Vdc, hysteresis voltage, VBO_hys=43Vdc, RBO1=4.3MW, RBO2=39KW VBO_hys RBO1 RBO2 1 100V 143V 43V 4.3MW 39KW 2 141V 169V 28V 2.8MW 18KW 3 169V 225V 56V 5.6MW 30KW Version 2.1a 500KW 0.47uF 2 1MW 0.22uF 1st Auto-restart enable Extended blanking time Brownout Auto-restart enable Auto-restart enable Auto-restart enable Brownout Extended blanking time Auto-restart enable Extended blanking time Brownout Brownout Auto-restart enable Extended blanking time Brownout The top row of the table is the first happened feature and the left column is the second happened feature. For example, The summary is listed below. VBO_h 1 2nd Case 3: if brownout voltage is 120Vac on and 160Vac off, then brownout voltage, VBO_l=169Vdc, hysteresis voltage, VBO_hys=56Vdc, RBO1=5.6MW, RBO2=30KW VBO_l CBK_max 3.7.5 Action sequence at BBA pin Since there are 3 functions at the same BBA pin; brownout, extended blanking time and the auto-restart enable, the actions of sequence are set as per the below table in case of several features happens simultaneously. Case 2: if brownout voltage is 100Vac on and 120Vac off, then brownout voltage, VBO_l=141Vdc, hysteresis voltage, VBO_hys=28Vdc, RBO1=2.8MW, RBO2=18KW Case Vcc tie up resistor Case 1: The "Auto-restart enable" feature happened first and it follows with the "Extended blanking time" feature. Then the "Auto-restart enable" feature will continue to hold and the "Extended blanking time" feature is ignored. 20 11 Jan 2012 CoolSET(R)-F3R80 ICE3BR2280JZ Functional Description Case 2: The "Extended blanking time" feature happened first and it follows with the "Auto-restart enable" feature. Then the "Auto-restart enable" feature will take the priority and the "Extended blanking time" feature is overridden. Case 3: The "Extended blanking time" feature happened first and it follows with the "Brownout" feature. Then the "Extended blanking time" feature will continue to work until it ends. After that if the over load fault is removed the "Brownout" feature takes the action. Case 4: The "Brownout" feature happened first and it follows with the "Auto-restart enable" feature. Then the "Brownout" feature will continue to work and the "Autorestart enable" feature is ignored. One typical case happened is that the "Extended blanking time" feature happened first and it follows with the "Brownout" feature. If, however, the over load fault is removed before the end of the extended blanking time, the "Brownout" feature can take action only after 20ms buffer time. Version 2.1a 21 11 Jan 2012 CoolSET(R)-F3R80 ICE3BR2280JZ Electrical Characteristics 4 Electrical Characteristics Note: All voltages are measured with respect to ground (Pin 8). The voltage levels are valid if other ratings are not violated. 4.1 Note: Absolute Maximum Ratings Absolute maximum ratings are defined as ratings, which when being exceeded may lead to destruction of the integrated circuit. For the same reason make sure, that any capacitor that will be connected to pin 7 (VCC) is discharged before assembling the application circuit. Ta=25C unless otherwise specified. Parameter Symbol Limit Values Unit Remarks min. max. VDS - 800 V ID_Puls - 4.9 A Avalanche energy, repetitive tAR limited by max. Tj=150C1) EAR - 0.047 mJ Avalanche current, repetitive tAR limited by max. Tj=150C IAR - 1.5 A VCC Supply Voltage VVCC -0.3 27 V FBB Voltage VFBB -0.3 5.5 V BBA Voltage VBBA -0.3 5.5 V CS Voltage VCS -0.3 5.5 V Junction Temperature Tj -40 150 C Storage Temperature TS -55 150 C Thermal Resistance Junction -Ambient RthJA - 96 K/W Soldering temperature, wavesoldering only allowed at leads Tsold - 260 C 1.6mm (0.063in.) from case for 10s ESD Capability (incl. Drain Pin) VESD - 2 kV Human body model2) Drain Source Voltage Pulse drain current, tp limited by Tjmax Controller & CoolMOS(R) 1) Repetitive avalanche causes additional power losses that can be calculated as PAV=EAR*f 2) According to EIA/JESD22-A114-B (discharging a 100pF capacitor through a 1.5kW series resistor) Version 2.1a 22 11 Jan 2012 CoolSET(R)-F3R80 ICE3BR2280JZ Electrical Characteristics 4.2 Note: Operating Range Within the operating range the IC operates as described in the functional description. Parameter Symbol Limit Values min. max. Unit Remarks VCC Supply Voltage VVCC VVCCoff 25 V Max value limited due to Vcc OVP Junction Temperature of Controller TjCon -25 130 C Max value limited due to thermal shut down of controller Junction Temperature of CoolMOS(R) TjCoolMOS -25 150 C 4.3 4.3.1 Note: Characteristics Supply Section The electrical characteristics involve the spread of values within the specified supply voltage and junction temperature range TJ from - 25 C to 125 C. Typical values represent the median values, which are related to 25C. If not otherwise stated, a supply voltage of VCC = 17 V is assumed. Parameter Symbol Limit Values Unit Test Condition min. typ. max. IVCCstart - 200 300 mA VVCC =16V IVCCcharge1 - - 5.0 mA VVCC = 0V IVCCcharge2 0.55 0.9 1.60 mA VVCC = 1V IVCCcharge3 0.38 0.7 - mA VVCC =16V Leakage Current of Start Up Cell and CoolMOS(R) IStartLeak - 0.2 50 mA VDrain = 650V at Tj=100C 1) Supply Current with Inactive Gate IVCCsup1 - 1.9 3.2 mA Supply Current with Active Gate IVCCsup2 - 3.1 4.8 mA IFBB = 0A Supply Current in Auto Restart Mode with Inactive Gate IVCCrestart - 320 - mA IFBB = 0A Supply Current in Active Burst Mode with Inactive Gate IVCCburst1 - 620 950 mA VFBB = 2.5V IVCCburst2 - 620 950 mA VVCC = 11.5V, VFBB = 2.5V VCC Turn-On Threshold VCC Turn-Off Threshold VCC Turn-On/Off Hysteresis VVCCon VVCCoff VVCChys 16.0 9.8 - 17.0 10.5 6.5 18.0 11.2 - V V V Start Up Current VCC Charge Current 1) The parameter is not subjected to production test - verified by design/characterization Version 2.1a 23 11 Jan 2012 CoolSET(R)-F3R80 ICE3BR2280JZ Electrical Characteristics 4.3.2 Internal Voltage Reference Parameter Trimmed Reference Voltage 4.3.3 Symbol VREF Limit Values Unit min. typ. max. 4.90 5.00 5.10 V Test Condition measured at pin FBB IFBB = 0 PWM Section Parameter Symbol Limit Values Unit Test Condition min. typ. max. fOSC1 56.5 65 73.4 kHz fOSC2 58.2 65 70.2 kHz Tj = 25C Frequency Jittering Range fjitter - 2.6 - kHz Tj = 25C Frequency Jittering period Tjitter - 4.0 - ms Tj = 25C Max. Duty Cycle Dmax 0.70 0.75 0.80 Min. Duty Cycle Dmin 0 - - PWM-OP Gain AV 3.05 3.25 3.45 VOffset-Ramp - 0.60 - V VFBB Operating Range Min Level VFBmin - 0.7 - V VFBB Operating Range Max level VFBmax - - 4.3 V RFB 9.0 15.4 22.0 kW Fixed Oscillator Frequency Voltage Ramp Offset FBB Pull-Up Resistor 1) VFBB < 0.3V CS=1V, limited by Comparator C41) The parameter is not subjected to production test - verified by design/characterization 4.3.4 Soft Start time Parameter Soft Start time Version 2.1a Symbol tSS Limit Values Unit min. typ. max. - 10 - 24 Test Condition ms 11 Jan 2012 CoolSET(R)-F3R80 ICE3BR2280JZ Electrical Characteristics 4.3.5 Control Unit Parameter Symbol Limit Values Unit min. typ. max. Test Condition Brownout reference voltage for comparator C14 VBO_ref 0.80 0.90 1.00 V Blanking time voltage lower limit for Comparator C3 VBKC3 0.80 0.90 1.00 V Blanking time voltage upper limit for Comparator C11 VBKC11 4.28 4.50 4.72 V Over Load Limit for Comparator C4 VFBC4 4.28 4.50 4.72 V Entry Burst select High level for Comparator C19 VFBC19 4.28 4.50 4.72 V Entry Burst select Low level for Comparator C20 VFBC20 0.40 0.50 0.60 V 10% Pin_max VFB_burst1 1.51 1.60 1.69 V < 7 counts 6.67% Pin_max VFB_burst2 1.34 1.42 1.50 V 8 ~ 39 counts 4.38% Pin_max VFB_burst3 1.20 1.27 1.34 V 40 ~ 191 counts Active Burst Mode High Level for Comparator C6a VFBC6a 3.35 3.50 3.65 V In Active Burst Mode Active Burst Mode Low Level for Comparator C6b VFBC6b 3.06 3.20 3.34 V Active Burst Mode Level for Comparator C13 VFBC13 3.85 4.00 4.15 V Overvoltage Detection Limit for Comparator C1 VVCCOVP1 19.5 20.5 21.5 V Overvoltage Detection Limit for Comparator C2 VVCCOVP2 25.0 25.5 26.3 V VAE 0.25 0.40 0.45 V Charging current for extended blanking time Ichg_EB 480 720 864 mA Charging current for brownout Ichg_BO 9.0 10.0 10.8 mA TjSD 130 140 150 C TjSD_hys - 50 - C Built-in Blanking Time for Overload Protection or enter Active Burst Mode tBK - 20 - ms Timer for entry burst select tEBS - 1 - ms Spike Blanking Time for Auto-Restart Protection tSpike - 30 - ms Active Burst Mode Entry Level for Comparator C5 Auto-restart enable reference voltage for Comparator C9 Thermal Shutdown1) Hysteresis for thermal Shutdown 1) 1) VFBB = 5V, during soft start Controller The parameter is not subjected to production test - verified by design/characterization. The thermal shutdown temperature refers to the junction temperature of the controller. Note: The trend of all the voltage levels in the Control Unit is the same regarding the deviation except VVCCOVP Version 2.1a 25 11 Jan 2012 CoolSET(R)-F3R80 ICE3BR2280JZ Electrical Characteristics and VVCCPD 4.3.6 Current Limiting Parameter Symbol Limit Values Unit Test Condition min. typ. max. Vcsth 0.99 1.06 1.13 V dVsense / dt = 0.6V/ms (Figure 20) Peak Current 20% Pin_max Limitation during Active Burst Mode 13.3% Pin_max 9.6% Pin_max Vcsth_burst1 0.39 0.45 0.51 V < 7 counts Vcsth_burst2 0.32 0.37 0.44 V 8 ~ 39 counts Vcsth_burst3 0.25 0.31 0.37 V 40 ~ 191 counts Leading Edge Blanking Normal mode tLEB_normal - 220 - ns Burst mode tLEB_burst - 180 - ns ICSbias -1.5 -0.2 - mA Peak Current Limitation (incl. Propagation Delay) CS Input Bias Current 4.3.7 VCS =0V CoolMOS(R) Section Parameter Symbol Limit Values Unit Test Condition min. typ. max. V(BR)DSS 800 870 - - V V Tj = 25C Tj = 110C1) Drain Source On-Resistance RDSon - 2.26 5.02 6.14 2.62 5.81 7.10 W W W Tj = 25C Tj=125C1) Tj=150C1) at ID = 0.81A Effective output capacitance, energy related Co(er) - 16.3 - pF VDS = 0V to 480V trise - 302) - ns - 2) - ns Drain Source Breakdown Voltage Rise Time Fall Time tfall 30 1) The parameter is not subjected to production test - verified by design/characterization 2) Measured in a Typical Flyback Converter Application Version 2.1a 26 11 Jan 2012 CoolSET(R)-F3R80 ICE3BR2280JZ CoolMOS(R) Performance Characteristic 5 CoolMOS(R) Performance Characteristic Figure 33 Safe Operating Area (SOA) curve for ICE3BR2280JZ Figure 34 SOA temperature derating coefficient curve Version 2.1a 27 11 Jan 2012 CoolSET(R)-F3R80 ICE3BR2280JZ CoolMOS(R) Performance Characteristic Figure 35 Power dissipation; Ptot=f(Ta) Figure 36 Drain-source breakdown voltage; VBR(DSS)=f(Tj), ID=0.25mA Version 2.1a 28 11 Jan 2012 CoolSET(R)-F3R80 ICE3BR2280JZ Input Power Curve 6 Input Power Curve Two input power curves giving the typical input power versus ambient temperature are showed below; Vin=85Vac~265Vac (Figure 37) and Vin=230Vac+/-15% (Figure 38). The curves are derived based on a typical discontinuous mode flyback model which considers either 60% maximum duty ratio or 150V maximum secondary to primary reflected voltage (higher priority). The calculation is based on no copper area as heatsink for the device. The input power already includes the power loss at input common mode choke, bridge rectifier and the CoolMOS.The device saturation current (ID_Puls @ Tj=125C) is also considered. To estimate the output power of the device, it is simply multiplying the input power at a particular operating ambient temperature with the estimated efficiency for the application. For example, a wide range input voltage (Figure 37), operating temperature is 50C, estimated efficiency is 85%, then the estimated output power is 23W (28W * 85%). Figure 37 Input power curve Vin=85~265Vac; Pin=f(Ta) Figure 38 Input power curve Vin=230Vac+/-15%; Pin=f(Ta) Version 2.1a 29 11 Jan 2012 CoolSET(R)-F3R80 ICE3BR2280JZ Outline Dimension 7 Outline Dimension PG-DIP-7 (Plastic Dual In-Line Outline) Figure 39 PG-DIP-7 (Pb-free lead plating Plastic Dual-in-Line Outline) Version 2.1a 30 11 Jan 2012 CoolSET(R)-F3R80 ICE3BR2280JZ Marking 8 Marking Marking Figure 40 Marking for ICE3BR2280JZ Version 2.1a 31 11 Jan 2012 CoolSET(R)-F3R80 ICE3BR2280JZ Schematic for recommended PCB layout 9 Figure 41 Schematic for recommended PCB layout Schematic for recommended PCB layout General guideline for PCB layout design using F3 CoolSET (refer to Figure 41): 1. "Star Ground "at bulk capacitor ground, C11: "Star Ground "means all primary DC grounds should be connected to the ground of bulk capacitor C11 separately in one point. It can reduce the switching noise going into the sensitive pins of the CoolSET device effectively. The primary DC grounds include the followings. a. DC ground of the primary auxiliary winding in power transformer, TR1, and ground of C16 and Z11. b. DC ground of the current sense resistor, R12 c. DC ground of the CoolSET device, GND pin of IC11; the signal grounds from C13, C14, C15 and collector of IC12 should be connected to the GND pin of IC11 and then "star "connect to the bulk capacitor ground. d. DC ground from bridge rectifier, BR1 e. DC ground from the bridging Y-capacitor, C4 2. High voltage traces clearance: High voltage traces should keep enough spacing to the nearby traces. Otherwise, arcing would incur. a. 400V traces (positive rail of bulk capacitor C11) to nearby trace: > 2.0mm b. 600V traces (drain voltage of CoolSET IC11) to nearby trace: > 2.5mm 3. Filter capacitor close to the controller ground: Filter capacitors, C13, C14 and C15 should be placed as close to the controller ground and the controller pin as possible so as to reduce the switching noise coupled into the controller. Guideline for PCB layout design when >3KV lightning surge test applied (refer to Figure 41): 1. Add spark gap Spark gap is a pair of saw-tooth like copper plate facing each other which can discharge the accumulated charge during surge test through the sharp point of the saw-tooth plate. a. Spark Gap 3 and Spark Gap 4, input common mode choke, L1: Gap separation is around 1.5mm (no safety concern) Version 2.1a 32 11 Jan 2012 CoolSET(R)-F3R80 ICE3BR2280JZ Schematic for recommended PCB layout b. Spark Gap 1 and Spark Gap 2, Live / Neutral to GROUND: These 2 Spark Gaps can be used when the lightning surge requirement is >6KV. 230Vac input voltage application, the gap separation is around 5.5mm 115Vac input voltage application, the gap separation is around 3mm 2. Add Y-capacitor (C2 and C3) in the Live and Neutral to ground even though it is a 2-pin input 3. Add negative pulse clamping diode, D11 to the Current sense resistor, R12: The negative pulse clamping diode can reduce the negative pulse going into the CS pin of the CoolSET and reduce the abnormal behavior of the CoolSET. The diode can be a fast speed diode such as IN4148. The principle behind is to drain the high surge voltage from Live/Neutral to Ground without passing through the sensitive components such as the primary controller, IC11. Version 2.1a 33 11 Jan 2012 Total Quality Management Qualitat hat fur uns eine umfassende Bedeutung. Wir wollen allen Ihren Anspruchen in der bestmoglichen Weise gerecht werden. Es geht uns also nicht nur um die Produktqualitat - unsere Anstrengungen gelten gleichermaen der Lieferqualitat und Logistik, dem Service und Support sowie allen sonstigen Beratungs- und Betreuungsleistungen. Quality takes on an allencompassing significance at Semiconductor Group. For us it means living up to each and every one of your demands in the best possible way. So we are not only concerned with product quality. We direct our efforts equally at quality of supply and logistics, service and support, as well as all the other ways in which we advise and attend to you. Dazu gehort eine bestimmte Geisteshaltung unserer Mitarbeiter. Total Quality im Denken und Handeln gegenuber Kollegen, Lieferanten und Ihnen, unserem Kunden. Unsere Leitlinie ist jede Aufgabe mit Null Fehlern" zu losen - in offener Sichtweise auch uber den eigenen Arbeitsplatz hinaus - und uns standig zu verbessern. Part of this is the very special attitude of our staff. Total Quality in thought and deed, towards co-workers, suppliers and you, our customer. Our guideline is "do everything with zero defects", in an open manner that is demonstrated beyond your immediate workplace, and to constantly improve. Unternehmensweit orientieren wir uns dabei auch an top" (Time Optimized Processes), um Ihnen durch groere Schnelligkeit den entscheidenden Wettbewerbsvorsprung zu verschaffen. Geben Sie uns die Chance, hohe Leistung durch umfassende Qualitat zu beweisen. Wir werden Sie uberzeugen. http://www.infineon.com Published by Infineon Technologies AG Throughout the corporation we also think in terms of Time Optimized Processes (top), greater speed on our part to give you that decisive competitive edge. Give us the chance to prove the best of performance through the best of quality - you will be convinced. Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Infineon: ICE3BR2280JZ ICE3BR2280JZXKLA1