VS-10ETF..SPbF Soft Recovery Series Vishay High Power Products Fast Soft Recovery Rectifier Diode, 10 A FEATURES * Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C * Compliant to RoHS directive 2002/95/EC * Halogen-free according to IEC 61249-2-21 definition * Designed and qualified for industrial level Base common cathode + 2 D2PAK (SMD-220) 1 Anode - APPLICATIONS 3 - Anode * Output rectification and freewheeling in inverters, choppers and converters * Input rectifications where severe restrictions conducted EMI should be met PRODUCT SUMMARY on DESCRIPTION VF at 10 A < 1.33 V trr 80 ns VRRM 1000 V/1200 V The VS-10ETF..SPbF fast soft recovery rectifier series has been optimized for combined short reverse recovery time and low forward voltage drop. The glass passivation ensures stable reliable operation in the most severe temperature and power cycling conditions. MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) CHARACTERISTICS Sinusoidal waveform VALUES UNITS 10 A VRRM 1000/1200 V IFSM 160 A VF 10 A, TJ = 25 C trr 1 A, 100 A/s TJ Range 1.33 V 80 ns - 40 to 150 C VOLTAGE RATINGS VRRM, MAXIMUM PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V VS-10ETF10SPbF 1000 1100 VS-10ETF12SPbF 1200 1300 PART NUMBER IRRM AT 150 C mA 4 ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average forward current Maximum peak one cycle non-repetitive surge current SYMBOL IF(AV) IFSM Maximum I2t for fusing I2t Maximum I2t for fusing I2t Document Number: 94094 Revision: 26-Apr-10 TEST CONDITIONS VALUES TC = 125 C, 180 conduction half sine wave 10 10 ms sine pulse, rated VRRM applied 160 10 ms sine pulse, no voltage reapplied 185 10 ms sine pulse, rated VRRM applied 128 10 ms sine pulse, no voltage reapplied 180 t = 0.1 ms to 10 ms, no voltage reapplied 1800 For technical questions, contact: diodestech@vishay.com UNITS A A2s A2s www.vishay.com 1 VS-10ETF..SPbF Soft Recovery Series Vishay High Power Products Fast Soft Recovery Rectifier Diode, 10 A ELECTRICAL SPECIFICATIONS PARAMETER Maximum forward voltage drop Forward slope resistance Threshold voltage Maximum reverse leakage current SYMBOL VFM rt VF(TO) IRM TEST CONDITIONS 10 A, TJ = 25 C TJ = 150 C TJ = 25 C VR = Rated VRRM TJ = 150 C VALUES UNITS 1.33 V 22.9 m 0.96 V 0.1 mA 4 RECOVERY CHARACTERISTICS PARAMETER SYMBOL Reverse recovery time trr Reverse recovery current Irr Reverse recovery charge Qrr Typical snap factor TEST CONDITIONS IF at 10 Apk 25 A/s 25 C S VALUES UNITS 310 ns 4.7 A 1.05 C IFM trr t dir dt Qrr IRM(REC) 0.6 THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range Maximum thermal resistance, junction to case Maximum thermal resistance, junction to ambient (PCB mount) Soldering temperature SYMBOL TEST CONDITIONS TJ, TStg RthJC DC operation UNITS - 40 to 150 C 1.5 C/W RthJA (1) 62 TS 240 Approximate weight Marking device VALUES Case style D2PAK (SMD-220) C 2 g 0.07 oz. 10ETF10S 10ETF12S Note (1) When mounted on 1" square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 m) copper 40 C/W. For recommended footprint and soldering techniques refer to application note #AN-994. www.vishay.com 2 For technical questions, contact: diodestech@vishay.com Document Number: 94094 Revision: 26-Apr-10 VS-10ETF..SPbF Soft Recovery Series Fast Soft Recovery Rectifier Diode, 10 A 24 10ETF.. Series RthJC (DC) = 1.5 C/W 145 Maximum Average Forward Power Loss (W) Maximum Allowable Case Temperature (C) 150 140 O Conduction angle 135 130 125 120 115 16 12 RMS limit O 8 Conduction period 4 10ETF.. Series TJ = 150 C 0 0 2 6 4 10 8 12 0 2 4 6 8 10 12 16 14 Average Forward Current (A) Average Forward Current (A) Fig. 1 - Current Rating Characteristics Fig. 4 - Forward Power Loss Characteristics 150 180 10ETF.. Series RthJC (DC) = 1.5 C/W 145 140 O 135 Conduction period 130 30 60 125 90 120 6 8 100 80 10ETF.. Series 40 115 4 120 DC 180 2 Initial TJ = 150 C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 140 60 120 0 At any rated load condition and with rated VRRM applied following surge. 160 Peak Half Sine Wave Forward Current (A) Maximum Allowable Case Temperature (C) DC 180 120 90 60 30 20 60 90 120 180 30 10 12 14 16 1 10 100 Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current Average Forward Current (A) Fig. 2 - Current Rating Characteristics 16 200 180 120 90 60 30 14 12 180 Peak Half Sine Wave Forward Current (A) Maximum Average Forward Power Loss (W) Vishay High Power Products 10 RMS limit 8 6 O Conduction angle 4 10ETF.. Series TJ = 150 C 2 2 4 6 8 140 120 100 80 60 0 0 160 10 Maximum non-repetitive surge current versus pulse train duration. Initial TJ = 150 C No voltage reapplied Rated VRRM reapplied 10ETF.. Series 40 0.01 0.1 1 Average Forward Current (A) Pulse Train Duration (s) Fig. 3 - Forward Power Loss Characteristics Fig. 6 - Maximum Non-Repetitive Surge Current Document Number: 94094 Revision: 26-Apr-10 For technical questions, contact: diodestech@vishay.com www.vishay.com 3 VS-10ETF..SPbF Soft Recovery Series Fast Soft Recovery Rectifier Diode, 10 A 2.0 1000 10ETF.. Series TJ = 25 C TJ = 150 C TJ = 25 C Qrr - Maximum Reverse Recovery Charge (C) Instantaneous Forward Current (A) Vishay High Power Products 100 10 IFM = 8 A 1.2 IFM = 5 A 0.8 IFM = 2 A 0.4 IFM = 1 A 0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 4.5 40 80 120 160 200 Instantaneous Forward Voltage (V) dI/dt - Rate of Fall of Forward Current (A/s) Fig. 7 - Forward Voltage Drop Characteristics Fig. 10 - Recovery Charge Characteristics, TJ = 25 C 5 10ETF.. Series TJ = 150 C 10ETF.. Series TJ = 25 C 0.5 Qrr - Maximum Reverse Recovery Charge (C) trr - Maximum Reverse Recovery Time (s) 1.6 10ETF.. Series 1 0.5 0.6 IFM = 10 A IFM = 8 A IFM = 5 A IFM = 2 A IFM = 1 A 0.4 0.3 0.2 0.1 0 IFM = 10 A 4 IFM = 8 A 3 IFM = 5 A 2 IFM = 2 A 1 IFM = 1 A 0 0 40 80 120 160 200 0 40 80 120 160 200 dI/dt - Rate of Fall of Forward Current (A/s) dI/dt - Rate of Fall of Forward Current (A/s) Fig. 8 - Recovery Time Characteristics, TJ = 25 C Fig. 11 - Recovery Charge Characteristics, TJ = 150 C 0.8 20 10ETF.. Series TJ = 25 C 10ETF.. Series TJ = 150 C 0.6 Irr - Maximum Reverse Recovery Current (A) trr - Maximum Reverse Recovery Time (s) IFM = 10 A IFM = 10 A IFM = 8 A IFM = 5 A IFM = 2 A IFM = 1 A 0.4 0.2 0 IFM = 10 A 16 IFM = 8 A 12 IFM = 5 A IFM = 2 A 8 IFM = 1 A 4 0 0 40 80 120 160 200 0 40 80 120 160 200 dI/dt - Rate of Fall of Forward Current (A/s) dI/dt - Rate of Fall of Forward Current (A/s) Fig. 9 - Recovery Time Characteristics, TJ = 150 C Fig. 12 - Recovery Current Characteristics, TJ = 25 C www.vishay.com 4 For technical questions, contact: diodestech@vishay.com Document Number: 94094 Revision: 26-Apr-10 VS-10ETF..SPbF Soft Recovery Series Fast Soft Recovery Rectifier Diode, 10 A Vishay High Power Products 25 Irr - Maximum Reverse Recovery Current (A) 10ETF.. Series TJ = 150 C IFM = 10 A 20 IFM = 8 A 15 IFM = 5 A IFM = 2 A 10 IFM = 1 A 5 0 0 40 80 120 160 200 dI/dt - Rate of Fall of Forward Current (A/s) ZthJC - Transient Thermal Impedance (C/W) Fig. 13 - Recovery Current Characteristics, TJ = 150 C 10 Steady state value (DC operation) 1 0.1 0.01 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 Single pulse 10ETF.. Series 0.001 0.001 Document Number: 94094 Revision: 26-Apr-10 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 14 - Thermal Impedance ZthJC Characteristics For technical questions, contact: diodestech@vishay.com www.vishay.com 5 VS-10ETF..SPbF Soft Recovery Series Vishay High Power Products Fast Soft Recovery Rectifier Diode, 10 A ORDERING INFORMATION TABLE Device code VS- 10 E T F 12 S 1 2 3 4 5 6 7 1 - HPP product suffix 2 - Current rating (10 = 10 A) 3 - Circuit configuration: TRL PbF 8 9 E = Single diode 4 - Package: T = D2PAK (TO-220AC) 5 - Type of silicon: F = Fast soft recovery rectifier 6 - Voltage code x 100 = VRRM 7 - S = Surface mountable 8 - 10 = 1000 V 12 = 1200 V None = Tube TRR = Tape and reel (right oriented) TRL = Tape and reel (left oriented) 9 - PbF = Lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95046 Part marking information www.vishay.com/doc?95054 Packaging information www.vishay.com/doc?95032 www.vishay.com 6 For technical questions, contact: diodestech@vishay.com Document Number: 94094 Revision: 26-Apr-10 Outline Dimensions Vishay Semiconductors D2PAK DIMENSIONS in millimeters and inches Conforms to JEDEC outline D2PAK (SMD-220) (2)(3) E B Pad layout A A (E) c2 11.00 MIN. (0.43) A (3) L1 4 9.65 MIN. (0.38) (D1) (3) Detail A D H 1 2 17.90 (0.70) 15.00 (0.625) (2) 3 3.81 MIN. (0.15) L2 B B 2.32 MIN. (0.08) A 2 x b2 c 2.64 (0.103) 2.41 (0.096) (3) E1 C View A - A 2xb 0.004 M B 0.010 M A M B Plating H 2x e Base Metal (4) b1, b3 Gauge plane Seating plane Lead assignments Diodes 1. - Anode (two die)/open (one die) 2., 4. - Cathode 3. - Anode SYMBOL MILLIMETERS MIN. c1 (4) (c) B 0 to 8 MAX. L3 Lead tip A1 L (b, b2) L4 Section B - B and C - C Scale: None Detail "A" Rotated 90 CW Scale: 8:1 INCHES MIN. MAX. NOTES SYMBOL MILLIMETERS MIN. MAX. INCHES MIN. MAX. NOTES A 4.06 4.83 0.160 0.190 D1 6.86 8.00 0.270 0.315 3 A1 0.00 0.254 0.000 0.010 E 9.65 10.67 0.380 0.420 2, 3 E1 7.90 8.80 0.311 0.346 3 b 0.51 0.99 0.020 0.039 b1 0.51 0.89 0.020 0.035 b2 1.14 1.78 0.045 0.070 b3 1.14 1.73 0.045 0.068 c 0.38 0.74 0.015 0.029 c1 0.38 0.58 0.015 0.023 c2 1.14 1.65 0.045 0.065 D 8.51 9.65 0.335 0.380 4 4 4 e 0.100 BSC H 14.61 15.88 0.575 0.625 L 1.78 2.79 0.070 0.110 L1 - 1.65 - 0.066 L2 1.27 1.78 0.050 0.070 L3 2 2.54 BSC L4 0.25 BSC 4.78 5.28 3 0.010 BSC 0.188 0.208 Notes (1) Dimensioning and tolerancing per ASME Y14.5 M-1994 (2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body (3) Thermal pad contour optional within dimension E, L1, D1 and E1 (4) Dimension b1 and c1 apply to base metal only (5) Datum A and B to be determined at datum plane H (6) Controlling dimension: inch (7) Outline conforms to JEDEC outline TO-263AB Document Number: 95046 Revision: 31-Mar-11 For technical questions within your region, please contact one of the following: www.vishay.com DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Revision: 12-Mar-12 1 Document Number: 91000