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c 2010 ROHM Co., Ltd. All rights reserved. 2010.07 - Rev.A
Phototransistor, top view type
RPT-37PB3F
The RPT-37PB3F is a silicon planar phototransistor. Since it is molded in plastic with a visible light filter, there is almost no effect
from stray light. It is particularly suited for use with a ROHM SIR-34ST3F infrared light emitting diode.
It is possible to distinguish the polarity by the shape of ramp type.
Applications Dimensions (Units : mm)
Optical control equipment
Receiver for sensors
Features
1) High sensitivity.
2) Almost no effect from stray light.
Absolute maximum ratings (Ta = 25C)
Parameter Symbol
IC
VCEO
PC
VECO
Topr
Tstg
Limits
−25~+85
−30~+85
32
5
30
150
Unit
V
V
mA
mW
°C
°C
Collector-emitter voltage
Emitter-collector voltage
Collector current
Collector power dissipation
Operating temperature
Storage temperature
Electrical and optical characteristics (Ta = 25C)
Parameter Symbol
I
C
I
CEO
λ
P
V
CE(sat)
θ
1 / 2
t
r
·t
f
Min.
2.0
−
−
−
−
−
Typ.
−
−
800
−
±36
10
Max.
−
0.5
−
0.4
−
−
Unit
mA V
CE
=5V, E=500L
X
V
CE
=10V(Black box)
−
I
C
=1mA, E=500L
X
−
V
CC
=5V, I
C
=1mA, R
L
=100Ω
μA
nm
V
deg
μs
Conditions
Light current
Dark current
Peak sensitivity wavelength
Collector-emitter saturation voltage
Half-angle
Response time
φ3.1±0.2
φ3.8±0.3
1.3Max.1 5.2±0.3Min.24
2− 0.5
(2.5)
4−0.6
2.5±1
1
1
2
2
Internal connection diagram
Notes :
1. Unspecfied tolerance shall be ±0.2.
2. Measurement in the bracket are that of
lead pin at base the mold.
3. Dimension in parenthesis are show for
reference.
Emitter Collector
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c 2010 ROHM Co., Ltd. All rights reserved. 2010.07 - Rev.A
Data Sheet RPT-37PB3F
Electrical and optical characteristic curves
Fig.1 Dark current
vs. ambient temperature
AMBIENT TEMPERATURE : Ta
(°C)
10
0
−25 0 25 50 75
0.1
1
10
100
1000
DARK CURRENT : ICEO
(nA)
VCE=10V
VCE=20V
VCE=30V
Fig.2 Relative output
vs. ambient temperature
−25 75 10
0
50250
20
50
200
500
10
100
1000
RELATIVE LIGHT CURRENT : I
C (%)
AMBIENT TEMPERATURE : Ta (°C)
Fig.3 Light current vs. irradiance
LIGHT CURRENT : I
C
(mA)
ILLUMINANCE : E (Lx)
0 250 500 750 125
0
1000
2
4
6
8V
CE
=5V
Fig.4 Output characteristics
COLLECTOR−EMITTER VOLTAGE : V
CE (V)
1
6
0 2 4 6 8 101214
2
0
4
6
8
10
LIGHT CURRENT : IC
(mA)
E=1000Lux
750Lux
500Lux
250Lux
Fig.5 Spectral sensitivity
RELATIVE SENSITIVITY : I
C (%)
OPTICAL WAVELENGTH : λ (nm)
600400 800 1000 1200 160
0
0
25
50
75
100
Fig.6 Collector dissipation vs.
ambient temperature
−25 0 25 50 75 10
0
40
160
120
80
0
AMBIENT TEMPERATURE : Ta (°C)
COLLECTOR DISSIPATION : P
C
(mW)
Fig.7 Response time vs.
collector current
COLLECTOR CURRENT : I
C
(mA)
0.1 110
1
10
100
1000
RESPONSE TIME : t
r
(μs)
V
CE
=5V
Ta=25°C
R
L
=1kΩ
R
L
=500Ω
R
L
=100Ω
Fig.8 Directional pattern
100 80 60 40 20 0
20
40
60
80
100
RELATIVE LUMINOUS INTENSITY (%)
RELATIVE LUMINOUS INTENSITY (%)
ANGULAR DISPLACEMENT (deg)
10°
0°
20°30°40°50°60°70°80°90°
10°
20°
30°
40°
50°
60°
70°
80°
9
0°
R1010
A
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