AOT8N50/AOTF8N50
500V, 9A N-Channel MOSFET
General Description Product Summary
V
DS
I
D
(at V
GS
=10V) 9A
R
DS(ON)
(at V
GS
=10V) < 0.85Ω
100% UIS Tested
100% R
g
Tested
For Halogen Free add "L" suffix to part number:
AOT8N50L & AOTF8N50L
Symbol
V
DS
V
GS
I
DM
I
AR
E
AR
E
AS
Peak diode recovery dv/dt dv/dt
T
J
, T
STG
T
L
Symbol
R
θ
JA
R
θCS
R
θJC
* Drain current limited by maximum junction temperature.
0.65
--
Units
°C/W65
0.5
65
3.25
Junction and Storage Temperature Range
Maximum Junction-to-Ambient
A,D
Power Dissipation
B
P
D
T
C
=25°C
Thermal Characteristics
300
-55 to 150
1.5 0.3
Avalanche Current
C
154
Single plused avalanche energy
G
307
3.2
Repetitive avalanche energy
C
V±30Gate-Source Voltage
T
C
=100°C A
30Pulsed Drain Current
C
Continuous Drain
Current
T
C
=25°C 9
The AOT8N50 & AOTF8N50 have been fabricated using
an advanced high voltage MOSFET process that is
designed to deliver high levels of performance and
robustness in popular AC-DC applications.
By providing low R
DS(on)
, C
iss
and C
rss
along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
V
UnitsParameter
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
AOT8N50 AOTF8N50
600V@150℃
Drain-Source Voltage 500
I
D
5
38.5192
6
9*
6*
Maximum Case-to-sink
A
Maximum Junction-to-Case
mJ
°C/W
°C/W
Derate above 25
o
C
Parameter AOT8N50 AOTF8N50
purpose, 1/8" from case for 5 seconds
A
W
W/
o
C
°C
mJ
V/ns
°C
Top View
TO-220F
TO-220
GD
S
G
D
S
G
D
S
Rev7: January 2015 www.aosmd.com Page 1 of 6
AOT8N50/AOTF8N50
Symbol Min Typ Max Units
500
600
BV
DSS
/
∆TJ
0.56 V/
o
C
1
10
I
GSS
Gate-Body leakage current ±100 nΑ
V
GS(th)
Gate Threshold Voltage 3.4 4 4.5 V
R
DS(ON)
0.63 0.85 Ω
g
FS
10 S
V
SD
0.73 1 V
I
S
Maximum Body-Diode Continuous Current 8 A
I
SM
30 A
C
iss
694 868 1042 pF
C
oss
74 93 112 pF
C
rss
6.2 7.8 9.4 pF
R
g
2 4 6 Ω
Q
g
23.6 28 nC
Q
gs
5.2 6.2 nC
Q
gd
10.6 12.7 nC
t
D(on)
19.5 24 ns
t
r
47 56.4 ns
t
D(off)
51.5 62 ns
t
f
38.5 46 ns
t
rr
206 247 ns
Q
rr
2.1 2.6 µC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
V
Drain-Source Breakdown Voltage I
D
=250µA, V
GS
=0V, T
J
=25°C
I
D
=250µA, V
GS
=0V, T
J
=150°C
Turn-On Rise Time
Turn-Off Fall Time
µA
V
DS
=0V, V
GS
=±30V
V
DS
=400V, T
J
=125°C
V
DS
=500V, V
GS
=0V
I
D
=250µA, V
GS
=0V
Body Diode Reverse Recovery Charge I
F
=8A,dI/dt=100A/µs,V
DS
=100V
Maximum Body-Diode Pulsed Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
BV
DSS
Breakdown Voltage Temperature
Coefficient
I
DSS
Zero Gate Voltage Drain Current
Total Gate Charge
V
GS
=10V, V
DS
=400V, I
D
=8A
Gate Source Charge
Gate Drain Charge
V
DS
=5V
I
D
=250µA
Diode Forward Voltage
Body Diode Reverse Recovery Time
Static Drain-Source On-Resistance V
GS
=10V, I
D
=4A
Reverse Transfer Capacitance
I
F
=8A,dI/dt=100A/µs,V
DS
=100V
V
GS
=0V, V
DS
=25V, f=1MHz
Turn-Off DelayTime
V
GS
=10V, V
DS
=250V, I
D
=8A,
R
G
=25Ω
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
V
GS
=0V, V
DS
=0V, f=1MHz
SWITCHING PARAMETERS
I
S
=1A,V
GS
=0V
V
DS
=40V, I
D
=4A
Forward Transconductance
Gate resistance
A. The value of R
θJA
is measured with the device in a still air environment with T
A
=25°C.
B. The power dissipation P
D
is based on T
J(MAX)
=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=150°C, Ratings are based on low frequency and duty cycles to keep initial T
J
=25°C.
D. The R
θJA
is the sum of the thermal impedence from junction to case R
θJC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T
J(MAX)
=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, I
AS
=3.2A, V
DD
=150V, R
G
=25Ω, Starting T
J
=25°C
Rev7: January 2015 www.aosmd.com Page 2 of 6
AOT8N50/AOTF8N50
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
0.0 0.2 0.4 0.6 0.8 1.0
V
SD
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
I
S
(A)
25°C
125°C
0
2
4
6
8
10
12
14
16
0 5 10 15 20 25 30
V
DS
(Volts)
Fig 1: On-Region Characteristics
I
D
(A)
V
GS
=5.5V
6V
10V
6.5V
0.1
1
10
100
2 4 6 8 10
V
GS
(Volts)
Figure 2: Transfer Characteristics
I
D
(A)
-55°C
V
DS
=40V
25°C
125°C
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0 2 4 6 8 10 12 14 16 18
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
R
DS(ON)
(Ω)
V
GS
=10V
0
0.5
1
1.5
2
2.5
3
-100 -50 0 50 100 150 200
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
Normalized On-Resistance
V
GS
=10V
I
D
=4A
0.8
0.9
1
1.1
1.2
-100 -50 0 50 100 150 200
T
J
(°C)
Figure 5: Break Down vs. Junction Temperature
BV
DSS
(Normalized)
Rev7: January 2015 www.aosmd.com Page 3 of 6
AOT8N50/AOTF8N50
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
3
6
9
12
15
0 5 10 15 20 25 30 35
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
GS
(Volts)
V
DS
=400V
I
D
=8A
1
10
100
1000
10000
0.1 1 10 100
V
DS
(Volts)
Figure 8: Capacitance Characteristics
Capacitance (pF)
C
iss
C
oss
C
rss
0.01
0.1
1
10
100
1 10 100 1000
V
DS
(Volts)
I
D
(Amps)
Figure 9: Maximum Forward Biased Safe
Operating Area for AOT8N50 (Note F)
10
µ
s
10ms
1ms
DC
R
DS(ON)
limited
T
J(Max)
=150°C
T
C
=25°C
100
µ
s
0.01
0.1
1
10
100
1 10 100 1000
V
DS
(Volts)
I
D
(Amps)
Figure 10: Maximum Forward Biased Safe Operating
Area for AOTF8N50 (Note F)
10µs
10ms
1ms
0.1sDC
R
DS(ON)
limited
T
J(Max)
=150°C
T
C
=25°C
100µs
1s
0
2
4
6
8
10
0 25 50 75 100 125 150
T
CASE
(°C)
Figure 11: Current De-rating (Note B)
Current rating I
D
(A)
Rev7: January 2015 www.aosmd.com Page 4 of 6
AOT8N50/AOTF8N50
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance for AOT8N50 (Note F)
Z
θJC
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θJC
.R
θJC
R
θJC
=0.65°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Single Pulse
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Pulse Width (s)
Figure 13: Normalized Maximum Transient Thermal Impedance for AOTF8N50 (Note F)
Z
θJC
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θJC
.R
θJC
R
θJC
=3.25°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Single Pulse
Rev7: January 2015 www.aosmd.com Page 5 of 6
AOT8N50/AOTF8N50
-
+
VDC
Ig
Vds
DUT
-
+
VDC
Vgs
Vgs
10V
Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+
VDC
DUT Vdd
Vgs
Vds
Vgs
RL
Rg
Vgs
Vds
10%
90%
Resistive Switching Test Circuit & Waveforms
t t
r
d(on)
t
on
t
d(off)
t
f
t
off
Vdd
Vgs
Id
Vgs
Rg
DUT
-
+
VDC
L
Vgs
Vds
Id
Vgs
BV
I
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Ig
Vgs
-
+
VDC
DUT
L
Vds
Vgs
Vds
Isd
Isd
Diode Recovery Test Circuit & Waveforms
Vds -
Vds +
I
F
AR
DSS
2
E = 1/2 LI
dI/dt
I
RM
rr
Vdd
Vdd
Q = - Idt
t
rr
AR
AR
Rev7: January 2015 www.aosmd.com Page 6 of 6