©2006 Fairchild Semiconductor Corporation 1www.fairchildsemi.com
BF494 Rev. A
BF494 NPN RF Transistor
tm
July 2006
BF494
NPN RF Transistor
Absolute Maximum Ratings * Ta = 25°C unless otherwise noted
* These ratings are limiting values a bo ve which the serviceability of any semiconductor de vice may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Thermal Characteristics
Electrical Characteristics* TC = 25°C unless otherwise noted
* DC Item are tested by Pulse Test: Pulse Width300us, Duty Cycle2%
Symbol Parameter Value Unit
VCEO Collector-Emitter Voltage 20 V
VCBO Collector-Base Voltage 30 V
VEBO Emitter-Base Voltage 5.0 V
ICCollector Current - Continuous 30 mA
TJJunction Temperature 150 °C
TSTG Storage Temperature Range - 55 ~ 150 °C
Symbol Parameter Value Unit
PDTotal Device Dissipation, by RθJA
Derate above 25°C350
2.8 mW
mW/°C
RθJC Thermal Resistance, Junction to case 125 °C/W
RθJA Thermal Resistance, Junction to Ambient 357 °C/W
Symbol Parameter Conditions Min. Max. Units
V(BR)CEO Collector-Emitter Breakdown Voltage IC = 1.0mA, IB = 0 20 V
V(BR)CBO Collector-Base BreakdownVoltage IC = 10µA, IE = 0 30 V
V(BR)EBO Emitter-Base Breakdown Voltage IE = 10µA, IC = 0 5.0 V
ICES Collector-Emitter Sustaining Current VCE = 40V, VEB = 0V 10 nA
hFE DC Current Gain VCE = 10V, IC = 1mA 67 222
VCE(sat) Collector-Emitter Saturation Voltage IC = 10mA, IB = 5mA 0.2 V
VBE(sat) Base-Emitter Saturation Voltage IC = 10mA, IB = 5mA 0.92 V
VBE(ON) Base-Emitter On Voltage VCE = 10V, IC = 10mA 650 740 mV
1. Collector 2. Emitter 3. Base
TO-92
2www.fairchildsemi.com
BF494 Rev. A
BF494 NPN RF Transistor
Package Dimensions
Dimensions in Millimeters
0.46 ±0.10
1.27TYP
(R2.29)
3.86MAX
[1.27 ±0.20]1.27TYP
[1.27 ±0.20]
3.60 ±0.20
14.47 ±0.40
1
.02 ±0.10
(0.25) 4.58 ±0.20
4.58 +0.25
–0.15
0.38 +0.1
0
–0.0
5
0.38 +0.10
–0.05
TO-92
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to
be an exhaustive list of all such trademarks.
BF494 NPN RF Transistor
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO
IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCH ILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE
OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE
RIGHTS OF OTHERS. THESE SPECIFI CATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITI ONS, SPE-
CIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEV ICES OR SYSTEMS W ITHOUT
THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant int o the body, or (b) support or sustain life , or
(c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably expected
to result in significant injury to the user.
2. A critical compone nt is any component of a life support device or system
whose failure to perform can be reasonably expected to cause the failu re
of the life support device or system, or t o affect it s safety or ef fectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In Design This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed Full Production This datas heet contai ns final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
FACT Quiet Series™
GlobalOptoisolator™
GTO™
HiSeC™
I2C™
i-Lo
ImpliedDisconnect™
IntelliMAX™
ISOPLANAR™
LittleFET™
MICROCOUPLER™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
MSXPro™
OCX™
OCXPro™
OPTOLOGIC®
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerEdge™
PowerSaver™
PowerTrench®
QFET®
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
µSerDes™
ScalarPump™
SILENT SWITCHER®
SMART START™
SPM™
Stealth™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TCM™
TinyBoost™
TinyBuck™
TinyPWM™
TinyPower™
TinyLogic®
TINYOPTO™
TruTranslation™
UHC™
UltraFET®
UniFET™
VCX™
Wire™
ACEx™
ActiveArray™
Bottomless™
Build it Now™
CoolFET™
CROSSVOLT
DOME™
EcoSPARK™
E2CMOS™
EnSigna™
FACT™
FAST®
FASTr™
FPS™
FRFET™
Across the board. Around the world.™
The Power Franchise®
Programmable Active Droop™
Rev. I20
3www.fairchildsemi.com
BF494 Rev. A
BF494 NPN RF Transistor