BAR 42
BAR 43, A, C, S
SMALLSIGNAL SCHOTTKY DIODES
DESCRIPTION
General purpose metal to silicon diodes featuring
very low turn-on voltageand fastswitching.
June 1999 - Ed: 2A
Symbol Parameter Value Unit
VRRM Repetitivepeak reversevoltage 30 V
IFContinuousforwardcurrent 100 mA
IFSM Surge non repetitiveforward current tp=10mssinusoidal 750 mA
Ptot Power dissipation (note1) Tamb =25°C 250 mW
Tstg Maximumstorage temperaturerange - 65 to +150 °C
Tj Maximumoperatingjunctiontemperature* 150 °C
TLMaximumtemperaturefor solderingduring 10s 260 °C
Note 1: for double diodes,Ptot is the total power dissipation of both diodes.
ABSOLUTE RATINGS (limitingvalues)
SOT-23
(Plastic)
K
N.C.
A
K
A1
A1
A2
A
K1
K2
K2
K1
A2
BAR42/BAR43 BAR43A
BAR43C BAR43S
*:
dPtot
dTj
<1
Rth
(
j
−
a
)thermal runaway conditionfor a diode on its own heatsink
Symbol Test conditions Value Unit
Rth(j-a) Junction-ambient* 500 °C/W
* Mounted on epoxy board with recommended pad layout.
THERMAL RESISTANCE
1/4
Symbol Test Conditions Min. Typ. Max. Unit
VBR Tj = 25°CI
R
= 100µA30 V
VF*Tj = 25°CBAR 42 IF= 10 mA 0.35 0.4 V
IF= 50mA 0.5 0.65
BAR 43 IF= 2 mA 0.26 0.33
IF= 15mA 0.45
All IF= 100mA 1
IR** Tj = 25°CVR=25V 500 nA
Tj = 100°C 100 µA
Pulse test: * tp = 380µs, δ<2%
** tp = 5 ms, δ<2%
STATIC CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
Symbol Test Conditions Min. Typ. Max. Unit
CTj = 25°CV
R
=1V F = 1MHz 7pF
trr Tj = 25°CI
F
=10mA I
R=10mA
I
rr =1mA RL= 100Ω5ns
η*Tj=25°CR
L
=50KΩC
L= 300 pF
F = 45Mhz Vi= 2V for BAR 43 80 %
* Detectionefficiency.
DYNAMIC CHARACTERISTICS
0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50
0.00E+0
2.00E-3
4.00E-3
6.00E-3
8.00E-3
1.00E-2
1.20E-2
1.40E-2
1.60E-2
1.80E-2
2.00E-2
VFM(V)
IFM(A)
Tj=100°C
Tj=50°C
Tj=25°C
Fig. 1-1: Forward voltage drop versus forward
current (typical values, low level).
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
1E-3
1E-2
1E-1
5E-1
VFM(V)
IFM(A)
Tj=100°C
Tj=50°C
Tj=25°C
Fig. 1-2: Forward voltage drop versus forward
current (typical values, high level).
BAR 42/BAR 43, A, C, S
2/4
0 5 10 15 20 25 30
1E-2
1E-1
1E+0
1E+1
1E+2
VR(V)
IR(µA)
Tj=50°C
Tj=25°C
Tj=100°C
Fig. 2: Reverse leakage current versus reverse
voltageapplied (typicalvalues).
0 25 50 75 100 125 150
1E-2
1E-1
1E+0
1E+1
1E+2
1E+3
1E+4
Tj(°C)
IR(µA)
VR=30V
Fig. 3: Reverse leakage current versus junction
temperature.
12 5102030
1
2
5
10
VR(V)
C(pF)
F=1MHz
Tj=25°C
Fig. 4: Junction capacitance versus reverse
voltageapplied(typical values).
1E-3 1E-2 1E-1 1E+0 1E+1 1E+2
0.01
0.10
1.00
tp(s)
Zth(j-a)/Rth(j-a)
T
δ=tp/T tp
Single pulse
δ= 0.1
δ= 0.2
δ= 0.5
Fig. 5: Relative variation of thermal impedance
junction to ambient versus pulse duration (epoxy
FR4with recommendedpad layout,e(Cu)=35µm).
0 5 10 15 20 25 30 35 40 45 50
150
200
250
300
350
S(Cu) (mm )
Rth(j-a) (°C/W)
P=0.25W
Fig. 6: Thermal resistance junction to ambient
versus copper surface under each lead (Epoxy
printedcircuitboardFR4,copperthickness:35µm).
BAR42/BAR 43, A, C, S
3/4
PACKAGE MECHANICAL DATA
SOT23 (Plastic)
B
E
S
e
e1
A
D
c
L
H
A1
REF. DIMENSIONS
Millimeters Inches
Min. Max. Min. Max.
A 0.89 1.4 0.035 0.055
A1 0 0.1 0 0.004
B 0.3 0.51 0.012 0.02
c 0.085 0.18 0.003 0.007
D 2.75 3.04 0.108 0.12
e 0.85 1.05 0.033 0.041
e1 1.7 2.1 0.067 0.083
E 1.2 1.6 0.047 0.063
H 2.1 2.75 0.083 0.108
L 0.6 typ. 0.024 typ.
S 0.35 0.65 0.014 0.026
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by implication or otherwise under any patentor patent rights of STMicroelectronics.Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
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FOOT PRINT DIMENSIONS
0.9
0.035 0.9
0.035
1.9
0.075
mm
inch
2.35
0.92
1.1
0.043
1.1
0.043
1.45
0.037
0.9
0.035
Orderingtype Marking Package Weight Base qty Deliverymode
BAR42 D94 SOT-23 0.01g 3000 Tape & reel
BAR43 D95 SOT-23 0.01g 3000 Tape & reel
BAR43S DB1 SOT-23 0.01g 3000 Tape & reel
BAR43C DB2 SOT-23 0.01g 3000 Tape & reel
BAR43S DA5 SOT-23 0.01g 3000 Tape & reel
Epoxymeets UL94,V0
BAR 42/BAR 43, A, C, S
4/4
