1C3D02065E Rev. -
C3D02065E
Silicon Carbide Schottky Diode
Z-Rec® RectifieR
Features
• 650-VoltSchottkyRectier
• OptimizedforPFCBoostDiodeApplication
• ZeroReverseRecoveryCurrent
• ZeroForwardRecoveryVoltage
• High-FrequencyOperation
• Temperature-IndependentSwitchingBehavior
• ExtremelyFastSwitching
• PositiveTemperatureCoefcientonVF
Benets
• ReplaceBipolarwithUnipolarRectiers
• EssentiallyNoSwitchingLosses
• HigherEfciency
• ReductionofHeatSinkRequirements
• ParallelDevicesWithoutThermalRunaway
Applications
• SwitchModePowerSupplies
• PowerFactorCorrection
-TypicalPFCPout:300W-450W
Package
TO-252-2
Part Number Package Marking
C3D02065E TO-252-2 C3D02065
PIN1
PIN2 CASE
Maximum Ratings
Symbol Parameter Value Unit Test Conditions Note
VRRM RepetitivePeakReverseVoltage 650 V
VRSM SurgePeakReverseVoltage 650 V
VDC DCBlockingVoltage 650 V
IFContinuousForwardCurrent
8
4
2
A
TC=25˚C
TC=135˚C
TC=162˚C
IFRM RepetitivePeakForwardSurgeCurrent 12
9ATC=25˚C,tP=10mS,HalfSineWaveD=0.3
TC=110˚C,tP=10mS,HalfSineWaveD=0.3
IFSM Non-RepetitivePeakForwardSurgeCurrent 21
19 ATC=25˚C,tP=10mS,HalfSineWaveD=0.3
TC=110˚C,tP=10mS,HalfSineWaveD=0.3
IFSM Non-RepetitivePeakForwardSurgeCurrent 65 ATC=25˚C,tP=10µS,Pulse
Ptot PowerDissipation 39.5
17 WTC=25˚C
TC=110˚C
TJ,Tstg OperatingJunctionandStorageTemperature -55 to
+175 ˚C
VRRM = 650 V
IF (TC=135˚C) =4A
Qc = 4.8nC
2C3D02065E Rev. -
Electrical Characteristics
Symbol Parameter Typ. Max. Unit Test Conditions Note
VFForwardVoltage 1.5
1.8
1.8
2.4 VIF=2ATJ=25°C
IF=2ATJ=175°C
IRReverseCurrent 10
20
50
100 μAVR = 650 V TJ=25°C
VR = 650 V TJ=175°C
QCTotalCapacitiveCharge 4.8 nC
VR=650V,IF=2A
di/dt=500A/μs
TJ=25°C
C TotalCapacitance
120
12
11
pF
VR=0V,TJ=25°C,f=1MHz
VR=200V,TJ=25˚C,f=1MHz
VR=400V,TJ=25˚C,f=1MHz
Note:
1. Thisisamajoritycarrierdiode,sothereisnoreverserecoverycharge.
Thermal Characteristics
Symbol Parameter Typ. Unit
RθJC TO-252PackageThermalResistancefromJunctiontoCase 3.8 °C/W
Typical Performance
2.5
3.0
3.5
4.0
Forward Current
Current 25C
0.0
0.5
1.0
1.5
2.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
Forward Current
Forward Voltage
Current 25C
Current 75C
Current 125C
Current 175C
TJ =25°C
TJ =75°C
TJ =125°C
TJ =175°C
IF Forward Current (A)
VF Forward Voltage (V)
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0.0 0.5 1.0 1.52.02.53.0
Figure1.ForwardCharacteristics Figure2.ReverseCharacteristics
6.0E-06
8.0E-06
1.0E-05
Reverse Current (A)
Current 25C
0.0E+00
2.0E-06
4.0E-06
0 100 200 300 400 500 600 700 800
Reverse Current (A)
Reverse Bias (V)
Current 25C
Current 75C
Current 125C
Current 175C
10
8
6
4
2
00100200300400500600700800
TJ =25°C
TJ =75°C
TJ =125°C
TJ =175°
IR Reverse Current (μA)
VR Reverse Voltage (V)
3C3D02065E Rev. -
8
10
12
14
16
18
20
C3D02060A Current Derating
0
2
4
6
8
25
50
75
100
125
150
175
TC Case Temperature (˚C)
Figure3.CurrentDerating
Figure5.TransientThermalImpedance
Figure4.Capacitancevs.ReverseVoltage
Typical Performance
I
F(PEAK)
Peak Forward Current (A)
TC Case Temperature (°C)
25 5075100125150175
20
18
16
14
12
10
8
6
4
2
0
20%Duty*
30%Duty*
50%Duty*
70%Duty*
DC
0
50
100
150
200
250
1 10 100 1000
V
R
Reverse Voltage (V)
C Capacitance (pF)
C Capacitance (pF)
VR Reverse Voltage (V)
60
50
40
30
20
10
0
1 101001000
0
10
20
30
40
50
60
1 10 100 1000
C Capacitance (pF)
V
R
Reverse Voltage (V)
D3_2A_FP
D3_2A_FP
Time (s)
Zth (°C/W)
4C3D02065E Rev. -
Typical Performance
40
35
30
25
20
15
10
5
0
Power Dissipation (W)
TC Case Temperature (°C)
255075100125150175
Figure6.PowerDerating
25.0
30.0
35.0
40.0
Power Dissipation (W)
0.0
5.0
10.0
15.0
20.0
25 50 75 100 125 150 175
Power Dissipation (W)
T
c
Case Temperature (°C)
POS Inches Millimeters
Min Max Min Max
A .250 .289 6.350 7.341
B .197 .215 5.004 5.461
C .027 .050 .686 1.270
D* .270 .322 6.858 8.179
E.178 .182 4.521 4.623
F .025 .045 .635 1.143
G44˚ 46˚ 44˚ 46˚
H.380 .410 9.652 10.414
J.090TYP 2.286TYP
K6˚ 8˚ 6˚ 8˚
L .086 .094 2.184 2.388
M .018 .034 .457 .864
N .035 .050 .889 1.270
P .231 .246 5.867 6.248
Q0.00 .005 0.00 .127
RR0.010TYP R0.254TYP
S.017 .023 .432 .584
T.038 .045 .965 1.143
U .021 .029 .533 .737
Package Dimensions
PackageTO-252-2
Note:
*Tab“D”maynotbepresent
*
5C3D02065E Rev. -
Recommended Solder Pad Layout
Part Number Package Marking
C3D02065E TO-252-2 C3D02065
TO-252-2
Diode Model
.08
VT
RT
Diode Model CSD10060
Vf T = VT + If*RT
VT= 0.92 + (Tj * -1.35*10-3)
RT= 0.052 + (Tj * 0.29*10-3)
Note: Tj = Diode Junction Temperature In Degrees Celsius,
valid from 25°C to 175°C
VfT = VT+If*RT
VT =0.98+(TJ*-1.7*10-3)
RT =0.21+(TJ*1.71*10-3)
Note: Recommended soldering proles can be found in the applications note here:
http://www.cree.com/power_app_notes/soldering
66 C3D02065E Rev. -
Copyright © 2014 Cree, Inc. All rights reserved.
The information in this document is subject to change without notice.
Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5451
www.cree.com/power
• RoHSCompliance
The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred
to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance
with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can
be obtained from your Cree representative or from the Product Documentation sections of www.cree.com.
• REAChCompliance
REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemi-
cal Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable
future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration.
REACh banned substance information (REACh Article 67) is also available upon request.
• This product has not been designed or tested for use in, and is not intended for use in, applications implanted into
the human body nor in applications in which failure of the product could lead to death, personal injury or property
damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines,
cardiacdebrillatorsorsimilaremergencymedicalequipment,aircraftnavigationorcommunicationorcontrol
systems,orairtrafccontrolsystems.
Notes
Mouser Electronics
Authorized Distributor
Click to View Pricing, Inventory, Delivery & Lifecycle Information:
Cree, Inc.:
C3D02065E