Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge
BIPOLAR ANALOG INTEGRATED CIRCUIT
PC3237TK
LOW NOISE WIDE BAND SILICON GERMANIUM MMIC
AMPLIFIER FOR MOBILE COMMUNICATIONS
Document No. PU10675EJ01V0DS (1st edition)
Date Published July 2007 NS
DESCRIPTION
The
PC3237TK is a silicon germanium (SiGe) monolithic integrated circuit designed as low noise amplifier for
the mobile digital TV etc. This device exhibits low noise figure and high power gain characteristics.
This package is 6-pin lead-less minimold, suitable for surface mount.
This IC is manufactured using our 50 GHz fmax UHS2 (Ultra High Speed Process) SiGe bipolar process.
FEATURES
Supply voltage : VCC = 2.4 to 3.3 V (2.8 V TYP.)
Low current consumption : ICC = 5 mA TYP. @ VCC = 2.8 V
Low Noise : NF = 1.4 dB TYP. @ f = 470 MHz
: NF = 1.5 dB TYP. @ f = 770 MHz
Power gain : GP = 15.3 dB TYP. @ f = 470 MHz
: GP = 13.5 dB TYP. @ f = 770 MHz
High-density surface mounting : 6-pin lead-less minimold package (1.5 1.1 0.55 mm)
APPLICATIONS
Low noise amplifier for the mobile digital TV etc.
ORDERING INFORMATION
Part Number
Order Number
Package
Marking
Supplying Form
PC3237TK-E2
PC3237TK-E2-A
6-pin lead-less minimold
(1511 PKG) (Pb-Free)
6N
Embossed tape 8 mm wide
Pin 1, 6 face the perforation side of the tape
Qty 5 kpcs/reel
Remark To order evaluation samples, please contact your nearby sales office
Part number for sample order:
PC3237TK-A
Data Sheet PU10675EJ01V0DS
2
PIN CONNECTIONS AND INTERNAL BLOCK DIAGRAM
Pin No.
Pin Name
1
NC
2
GND
3
INPUT
4
VCC
5
GND
6
OUTPUT
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Conditions
Ratings
Unit
Supply Voltage
VCC
TA = +25°C
3.6
V
Circuit Current
ICC
TA = +25°C
10
mA
Power Dissipation
PD
TA = +85C Note
203
mW
Operating Ambient Temperature
TA
40 to +85
°C
Storage Temperature
Tstg
55 to +150
°C
Input Power
Pin
TA = +25°C
+8
dBm
Note Mounted on double-sided copper-clad 50 50 1.6 mm epoxy glass PWB
RECOMMENDED OPERATING RANGE
Parameter
Symbol
MIN.
TYP.
MAX.
Unit
Supply Voltage
VCC
2.4
2.8
3.3
V
Operating Ambient Temperature
TA
40
+25
+85
°C
Data Sheet PU10675EJ01V0DS
3
ELECTRICAL CHARACTERISTICS (TA = +25°C, VCC = 2.8 V, ZS = ZL = 50 , unless otherwise specified)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Circuit Current
ICC
No input signal
3.5
5
7
mA
Power Gain 1
GP1
f = 470 MHz, Pin = 30 dBm
13.0
15.3
17.5
dB
Power Gain 2
GP2
f = 770 MHz, Pin = 30 dBm
11.0
13.5
16.0
dB
Noise Figure 1
NF1
f = 470 MHz
1.4
1.9
dB
Noise Figure 2
NF2
f = 770 MHz
1.5
2.0
dB
Input Return Loss 1
RLin1
f = 470 MHz, Pin = 30 dBm
6.5
9.5
dB
Input Return Loss 2
RLin2
f = 770 MHz, Pin = 30 dBm
5.5
8.5
dB
Output Return Loss 1
RLout1
f = 470 MHz, Pin = 30 dBm
9
14
dB
Output Return Loss 2
RLout2
f = 770 MHz, Pin = 30 dBm
10
15
dB
Isolation 1
ISL1
f = 470 MHz, Pin = 30 dBm
17
22
dB
Isolation 2
ISL2
f = 770 MHz, Pin = 30 dBm
16
21
dB
Gain 1 dB Compression Output Power
1
PO (1 dB) 1
f = 470 MHz
8
5.5
dBm
Gain 1 dB Compression Output Power
2
PO (1 dB) 2
f = 770 MHz
8
5.5
dBm
STANDARD CHARACTERISTICS FOR REFERENCE
(TA = +25°C, VCC = 2.8 V, ZS = ZL = 50 , unless otherwise specified)
Parameter
Symbol
Test Conditions
Reference Value
Unit
Saturated Output Power 1
PO (sat) 1
f = 470 MHz, Pin = +2 dBm
+1.3
dBm
Saturated Output Power 2
PO (sat) 2
f = 770 MHz, Pin = +2 dBm
+1.3
dBm
Input 3rd Order Distortion Intercept Point 1
IIP31
f1 = 470 MHz, f2 = 471 MHz
10.5
dBm
Input 3rd Order Distortion Intercept Point 2
IIP32
f1 = 770 MHz, f2 = 771 MHz
9.5
dBm
Output 3rd Order Distortion Intercept Point
1
OIP31
f1 = 470 MHz, f2 = 471 MHz
+4.8
dBm
Output 3rd Order Distortion Intercept Point
2
OIP32
f1 = 770 MHz, f2 = 771 MHz
+4.0
dBm
K factor 1
K1
f = 470 MHz
1.15
K factor 2
K2
f = 770 MHz
1.20
Data Sheet PU10675EJ01V0DS
4
TEST CIRCUIT
The application circuits and their parameters are for reference only and are not intended for use in actual design-ins.
COMPONENTS OF TEST CIRCUIT FOR MEASURING
ELECTRICAL CHARACTERISTICS
Type
Value
C1, C2
Chip Capacitor
100 pF
C3
Chip Capacitor
1 000 pF
C4
Feed-through Capacitor
1 000 pF
Data Sheet PU10675EJ01V0DS
5
ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD
Notes
1. 30 30 0.4 mm double sided copper clad FR-4 board.
2. Back side: GND pattern
3. Au plated on pattern
4. : Through holes
Data Sheet PU10675EJ01V0DS
6
TYPICAL CHARACTERISTICS (TA = +25C, VCC = 2.8 V, ZS = ZL = 50 , unless otherwise specified)
Remark The graphs indicate nominal characteristics.
Data Sheet PU10675EJ01V0DS
7
Remark The graphs indicate nominal characteristics.
Data Sheet PU10675EJ01V0DS
8
Remark The graphs indicate nominal characteristics.
Data Sheet PU10675EJ01V0DS
9
Remark The graphs indicate nominal characteristics.
Data Sheet PU10675EJ01V0DS
10
S-PARAMETERS (TA = +25C, VCC = 2.8 V, monitored at connector on board)
S11FREQUENCY
S22FREQUENCY
Data Sheet PU10675EJ01V0DS
11
PACKAGE DIMENSIONS
6-PIN LEAD-LESS MINIMOLD (1511 PKG) (UNIT: mm)
12 Data Sheet PU10675EJ01V0DS
NOTES ON CORRECT USE
(1) Observe precautions for handling because of electro-static sensitive devices.
(2) Form a ground pattern as widely as possible to minimize ground impedance (to prevent undesired oscillation).
All the ground terminals must be connected together with wide ground pattern to decrease impedance difference.
(3) The bypass capacitor should be attached to the VCC line.
(4) The DC cut capacitor should be attached to Input and Output pin.
(5) Pin 1 (NC) should be connected to the ground pattern.
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered and mounted under the following recommended conditions. For soldering
methods and conditions other than those recommended below, contact your nearby sales office.
Soldering Method
Soldering Conditions
Condition Symbol
Infrared Reflow
Peak temperature (package surface temperature) : 260C or below
Time at peak temperature : 10 seconds or less
Time at temperature of 220C or higher : 60 seconds or less
Preheating time at 120 to 180C : 12030 seconds
Maximum number of reflow processes : 3 times
Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below
IR260
Wave Soldering
Peak temperature (molten solder temperature) : 260C or below
Time at peak temperature : 10 seconds or less
Preheating temperature (package surface temperature) : 120C or below
Maximum number of flow processes : 1 time
Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below
WS260
Partial Heating
Peak temperature (terminal temperature) : 350C or below
Soldering time (per side of device) : 3 seconds or less
Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below
HS350
Caution Do not use different soldering methods together (except for partial heating).