VS-ST650C..L Series
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Phase Control Thyristors
(Hockey PUK Version), 790 A
FEATURES
• Center amplifying gate
• Metal case with ceramic insulator
• International standard case B-PUK (TO-200AC)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• DC motor control
• Controlled DC power supplies
• AC controllers
ELECTRICAL SPECIFICATIONS
PRIMARY CHARACTERISTICS
IT(AV) 790 A
VDRM/VRRM 2000 V, 2200 V, 2400 V
VTM 2.07 V
IGT 100 mA
TJ-40 °C to +125 °C
Package B-PUK (TO-200AC)
Circuit configuration Single SCR
B-PUK (TO-200AC)
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
IT(AV)
790 A
Ths 55 °C
IT(RMS)
1557 A
Ths 25 °C
ITSM
50 Hz 10 100 A
60 Hz 10 700
I2t50 Hz 510 kA2s
60 Hz 475
VDRM/VRRM 2000 to 2400 V
tqTypical 200 μs
TJ-40 to +125 °C
VOLTAGE RATINGS
TYPE NUMBER VOLTAGE
CODE
VDRM/VRRM, MAXIMUM REPETITIVE
PEAK AND OFF-STATE VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
V
IDRM/IRRM MAXIMUM
AT TJ = TJ MAXIMUM
mA
VS-ST650C..L
20 2000 2100
8022 2200 2300
24 2400 2500
VS-ST650C..L Series
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ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current
at heatsink temperature IT(AV) 180° conduction, half sine wave
Double side (single side) cooled
790 (324) A
55 (85) °C
Maximum RMS on-state current IT(RMS) DC at 25 °C heatsink temperature double side cooled 1857
A
Maximum peak, one-cycle
non-repetitive surge current ITSM
t = 10 ms No voltage
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
10 100
t = 8.3 ms 10 700
t = 10 ms 100 % VRRM
reapplied
8600
t = 8.3 ms 9150
Maximum I2t for fusing I2t
t = 10 ms No voltage
reapplied
510
kA2s
t = 8.3 ms 475
t = 10 ms 100 % VRRM
reapplied
370
t = 8.3 ms 347
Maximum I2t for fusing I2t t = 0.1 to 10 ms, no voltage reapplied 5100 kA2s
Low level value of threshold voltage VT(TO)1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 1.04 V
High level value of threshold voltage VT(TO)2 (I > x IT(AV)), TJ = TJ maximum 1.13
Low level value of on-state slope
resistance rt1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.61
m
High level value of on-state
slope resistance rt2 (I > x IT(AV)), TJ = TJ maximum 0.35
Maximum on-state voltage VTM Ipk = 1700 A, TJ = TJ maximum, tp = 10 ms sine pulse 2.07 V
Maximum holding current IHTJ = 25 °C, anode supply 12 V resistive load 600 mA
Typical latching current IL1000
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum non-repetitive rate of
rise of turned-on current dI/dt Gate drive 20 V, 20 , tr 1 μs
TJ = TJ maximum, anode voltage 80 % VDRM 1000 A/μs
Typical delay time tdGate current 1 A, dIg/dt = 1 A/μs
Vd = 0.67 % VDRM, TJ = 25 °C 1.0
μs
Maximum turn-off time tqITM = 750 A, TJ = TJ maximum, dI/dt = 60 A/μs
VR = 50, dV/dt = 20 V/μs, Gate 0 V 100 , tp = 500 μs 200
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum critical rate of rise of off-state voltage dV/dt TJ = TJ maximum linear to 80 % rated VDRM 500 V/μs
Maximum peak reverse and off-state leakage
current
IRRM,
IDRM TJ = TJ maximum, rated VDRM/VRRM applied 80 mA
VS-ST650C..L Series
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Note
• The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS
VALUES UNITS
TYP. MAX.
Maximum peak gate power PGM TJ = TJ maximum, tp 5 ms 10.0 W
Maximum average gate power PG(AV) TJ = TJ maximum, f = 50 Hz, d% = 50 2.0
Maximum peak positive gate current IGM
TJ = TJ maximum, tp 5 ms
3.0 A
Maximum peak positive gate voltage + VGM 20 V
Maximum peak negative gate voltage - VGM 5.0
DC gate current required to trigger IGT
TJ = -40 °C
Maximum required gate trigger/
current/voltage are the lowest
value which will trigger all units
12 V anode to cathode applied
200 -
mATJ = 25 °C 100 200
TJ = 125 °C 50 -
DC gate voltage required to trigger VGT
TJ = -40 °C 2.5 -
VTJ = 25 °C 1.8 3.0
TJ = 125 °C 1.1 -
DC gate current not to trigger IGD
TJ = TJ maximum
Maximum gate current/voltage
not to trigger is the maximum
value which will not trigger any
unit with rated VDRM anode to
cathode applied
10 mA
DC gate voltage not to trigger VGD 0.25 V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum operating temperature range TJ-40 to 125 °C
Maximum storage temperature range TStg -40 to 150
Maximum thermal resistance, junction to heatsink RthJ-hs
DC operation single side cooled 0.073
K/W
DC operation double side cooled 0.031
Maximum thermal resistance, case to heatsink RthC-hs
DC operation single side cooled 0.011
DC operation double side cooled 0.006
Mounting force, ± 10 % 14 700
(1500)
N
(kg)
Approximate weight 255 g
Case style See dimensions - link at the end of datasheet B-PUK (TO-200AC)
RthJ-hs CONDUCTION
CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS
SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE
180° 0.009 0.009 0.006 0.006
TJ = TJ maximum K/W
120° 0.011 0.011 0.011 0.011
90° 0.014 0.014 0.015 0.015
60° 0.020 0.020 0.021 0.021
30° 0.036 0.036 0.036 0.036
VS-ST650C..L Series
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Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
Fig. 3 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
Fig. 5 - On-State Power Loss Characteristics
Fig. 6 - On-State Power Loss Characteristics
60
70
80
90
100
110
120
130
0 50 100 150 200 250 300 350 400
30°
60°
90°
120°
180°
Av era g e O n-state C urren t (A )
Conduction Angle
Maxim um Allowable Heatsink Temperature (°C)
ST 650C ..L Se rie s
(Single Side C oo le d)
R (D C) = 0 .07 3 K/W
th J-hs
20
30
40
50
60
70
80
90
100
110
120
130
0 100 200 300 400 500 600 700 800
30° 60°
90°
120°
180°
Av era g e On-sta te C urre nt (A)
Conduction Angle
Maximum Allowable Heatsink Temperature (°C)
ST 650C ..L Se ries
(Double Side Cooled)
R (D C ) = 0.0 31 K /W
thJ-h s
20
30
40
50
60
70
80
90
100
110
120
130
0 100 200 300 400 500 600 700 800
30° 60°
90°
120°
180°
Av era g e On-sta te C urre nt (A)
Conduction Angle
Maximum Allowable Heatsink Temperature (°C)
ST 650C ..L Se ries
(Double Side Cooled)
R (D C ) = 0.0 31 K /W
thJ-h s
20
30
40
50
60
70
80
90
100
110
120
130
0 200 400 600 800 1000 1200 1400
DC
30°
60°
90°
120°
180°
Average O n-state C urre nt (A)
Cond uction Period
Maxim um Allow able Heatsink Tem perature (°C)
ST650C..L Series
(D ouble Side C ooled)
R (DC ) = 0.031 K/W
th J-hs
0
250
500
750
1000
1250
1500
1750
2000
0 100 200 300 400 500 600 700 800
RMS Lim it
Conduction Angle
180°
120°
90°
60°
30°
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
ST650C..L Series
T = 125°C
J
0
200
400
600
800
1000
1200
1400
1600
1800
2000
2200
2400
0 200 400 600 800 1000 1200 1400
DC
180°
120°
90°
60°
30°
RMS Lim it
Conduction Period
M axim um Average On-state Pow er Loss (W)
A ve ra g e O n -sta te C urre nt (A)
ST650C ..L Series
T = 125°C
J
VS-ST650C..L Series
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Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 9 - On-State Voltage Drop Characteristics
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
4000
5000
6000
7000
8000
9000
10000
001011
Number O f Equal Amp litude Half Cycle Current Pulses (N)
Pea k Half Sine Wave On-state Current (A)
A t Any Rated Loa d C ond itio n An d W ith
R a t e d V A p p l ie d F o l lo w in g S u r g e .
RRM
Initial T = 12 5°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
ST650 C..L S erie s
4000
5000
6000
7000
8000
9000
10000
11000
12000
11.010.0
Peak Half Sine W ave O n-state C urrent (A)
Pulse Train Duration (s)
M a x im um N o n R e p etitive Surg e C urre nt
Ve rsu s Pulse Train D u ra tion . C o ntrol
O f C onduction M ay N ot Be M aintained.
In it ia l T = 1 2 5 °C
N o V o lt a g e R e a p p l ie d
Ra te d V Reapplied
RRM
J
ST650C..L Series
100
1000
10000
0.5 1 1.5 2 2.5 3
Instantaneous On-state Current (A)
Instan tan eous O n -stat e Voltage (V)
ST650C..L Series
T = 25°C
J
T = 125°C
J
0.001
0.01
0.1
0111.010.0100.0
Square Wave Pulse Duration (s)
thJ-hs
Stea d y Sta te Va lue
R = 0.073 K/W
(Sin gle Side C ooled)
R = 0.031 K/W
(Do uble Side Coo led)
(DC Operation)
thJ-hs
thJ-hs
Transient Th erm al Im pe danc e Z (K/W )
ST650C ..L Se ries
VS-ST650C..L Series
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Fig. 11 - Gate Characteristics
ORDERING INFORMATION TABLE
0.1
1
10
100
0.001 0.01 0.1 1 10 100
VG D
IG D
(b)
(a)
Tj = 2 5 ° C
Tj=125 °C
Tj=-40 °C
(2) (3)
Instantan eo us G a te C urren t (A)
Insta nt an e ous G a te V olta g e (V )
a) Recom mended load line for
b ) R e c o m m e n d e d lo a d lin e fo r
<=30% rated di/dt : 10V, 10ohm s
Frequency Limited by PG(AV)
rated di/dt : 20V, 10ohm s; tr<=1 µs
tr<=1 µs
(1)
(1) PG M = 10W , tp = 4m s
(2) PG M = 20W , tp = 2m s
(3) PG M = 40W , tp = 1m s
(4) PG M = 60W , tp = 0.66m s
Rectangular gate pulse
ST6 50C..L Se rie s
(4)
- Thyristor
2
- Essential part number
3
- 0 = converter grade
4
- C = ceramic PUK
9- Critical dV/dt:
5
- Voltage code x 100 = VRRM (see Voltage Ratings table)
6
- L = PUK case B-PUK (TO-200AC)
7
8- 0 = eyelet terminals (gate and auxiliary cathode unsoldered leads)
1 = fast-on terminals (gate and auxiliary cathode unsoldered leads)
2 = eyelet terminals (gate and auxiliary cathode soldered leads)
3 = fast-on terminals (gate and auxiliary cathode soldered leads)
none = 500 V/µs (standard selection)
L = 1000 V/µs (special selection)
Device code
51 32 4 6 7 8 9
STVS- 65 0 C 24 L 1 -
1- Vishay Semiconductors product
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95076
Outline Dimensions
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B-PUK (TO-200AC)
DIMENSIONS in millimeters (inches)
Legal Disclaimer Notice
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Revision: 08-Feb-17 1Document Number: 91000
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