© 2006 Microchip Technology Inc. DS21422D-page 1
TC4426/TC4427/TC4428
Features:
• High Peak Output Current – 1.5A
• Wide Input Supply Voltage Operating Range:
- 4.5V to 18V
• High Capacitive Load Drive Capability – 1000 pF
in 25 ns (typ.)
• Short Delay Times – 40 ns (typ.)
• Matched Rise and Fall Times
• Low Supply Current:
- With Logic ‘1’ Input – 4 mA
- With Logic ‘0’ Input – 400 μA
• Low Output Impedance – 7Ω
• Latch-Up Protec te d: Wi ll Wit hstand 0.5 A Rev ers e
Current
• Input Will Withstand Negative Inputs Up to 5V
• ESD Protected – 4 kV
• Pin-compatible with the TC426/TC427/TC428
• Space-saving 8-Pin MSOP and 8-Pin 6x5 DFN
Packages
Applications:
• Switch Mode Power Supplies
• Line Drivers
• Pulse Transformer Drive
General Description:
The TC4426/TC4427/TC4428 are improved versions
of the earlier TC426/TC427/TC428 family of MOSFET
drivers. The TC4426/TC4427/TC4428 devices have
matched rise and fall times when charging and
discharging the gate of a MOSFET.
These devices are highly latch-up resistant under any
conditions within their power and voltage ratings. They
are not subj ect to damag e when up to 5V of noise spik-
ing (of either polarity) occurs on the ground pin. They
can accept, without damage or logic upset, up to
500 mA of reverse current (of either polarity) being
forced back into their outputs. All terminals are fully
protected against Electrostatic Discharge (ESD) up to
4kV.
The TC4426/TC4427/TC4428 MOSFET drivers can
easily charge/discharge 1000 pF gate capacitances in
under 30 ns. These devices provide low enough
impeda nce s in both the on an d off st a tes to ens ure the
MOSFET’s intended state will not be affected, even by
large transients.
Other compatible drivers are the TC4426A/TC4427A/
TC4428A family of devices. The TC4426A/TC4427A/
TC4428A devices have matched leading and falling
edge input-to-output delay times, in addition to the
matched rise and fall times of the TC4426/TC4427/
TC4428 devices.
Package Types
Note 1: Exposed pad of the DFN package is electrically isolated.
8-Pin DFN(1)
NC
IN A
GND
IN B
2
3
45
6
7
8
1
1
2
3
4
NC
5
6
7
8OUT A
OUT B
NC
IN A
GND
IN B VDD
TC4426
TC4427
TC4426 TC4427
NC
OUT A
OUT B
VDD TC4426
TC4427
TC4428
NC
OUT A
OUT B
VDD
TC4428 TC4428
NC
OUT A
OUT B
VDD
TC4426 TC4427
NC
OUT A
OUT B
VDD
TC4428
NC
OUT A
OUT B
VDD
8-Pin MSOP/
PDIP/SOIC
1.5A Dual High-Speed Power MOSFET Drivers
TC4426/TC4427/TC4428
DS21422D-page 2 © 2006 Microchip Technology Inc.
Functional Block Diagram
Effective
Input C = 12 pF
(Each Input) TC4426/TC4427/TC4428
Output
Input
GND
VDD
300 mV
4.7V
Inverting
Non-Inverting
Note 1: TC4426 has two inverting drivers, while the TC4427 has two non-inverting
drivers. The TC4428 has one inverting and one non-inverting driver.
2: Ground any unused driver input.
1.5 mA
© 2006 Microchip Technology Inc. DS21422D-page 3
TC4426/TC4427/TC4428
1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings †
Supply Voltage.....................................................+22V
Input Voltage, IN A or IN B
.....................................(VDD + 0.3V) to (GND – 5V)
Package Power Dissipation (TA ≤ 70°C)
DFN.............................................................. Note 3
MSOP..........................................................340 mW
PDIP............................................................730 mW
SOIC............................................................470 mW
Storage Temperature Range..............-65°C to +150°C
Maximum Junction Temperature......................+150°C
† Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device. These
are stress ratings only and funct ional operation of the device
at these or any other conditions above those indicated in the
operation sections of the specifications is not implied.
Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.
PIN FUNCTION TABLE
DC CHARACTERISTICS
Name Function
NC No Connection
IN A Input A
GND Ground
IN B Input B
OUT B Output B
VDD Supply Input
OUT A Output A
NC No Connection
Electrical Specifications: Unless otherwise noted, TA = +25ºC with 4.5V ≤ VDD ≤ 18V.
Parameters Sym Min Typ Max Units Conditions
Input
Logic ‘1’, High Input Voltage VIH 2.4 — — V Note 2
Logic ‘0’, Low Input Voltage VIL ——0.8V
Input Current IIN -1.0 — +1.0 μA0V ≤ VIN ≤ VDD
Output
High Output Voltage VOH VDD – 0.025 — — V DC Test
Low Ou tput Voltage VOL — — 0.025 V DC Test
Output Re si stanc e RO—710ΩIOUT = 10 mA, VDD = 18V
Peak Output Current IPK —1.5—AV
DD = 18V
Latch-Up Prote ction
Withstand Reverse Current IREV — > 0.5 — A Duty cycle ≤ 2%, t ≤ 300 μs
VDD = 18V
Switching T ime (Note 1)
Rise Time tR—1930nsFigure 4-1
Fall Time tF—1930nsFigure 4-1
Delay Time tD1 —2030nsFigure 4-1
Delay Time tD2 —4050nsFigure 4-1
Power Supply
Power Supply Current IS—
——
—4.5
0.4 mA VIN = 3V (Both inputs)
VIN = 0V (Both inputs )
Note 1: Switching times ensured by design.
2: For V temperature range devices, the VIH (Min) limit is 2.0V.
3: Package power dissipation is dependent on the copper pad area on the PCB.
TC4426/TC4427/TC4428
DS21422D-page 4 © 2006 Microchip Technology Inc.
DC CHARACTERISTICS (OVER OPERATING TEMPERATURE RANGE)
TEMPERATURE CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, over operating temperature range with 4.5V ≤ VDD ≤ 18V.
Parameters Sym Min Typ Max Units Conditions
Input
Logic ‘1’, High Input Voltage VIH 2.4 — — V Note 2
Logic ‘0’, Low Input Voltage VIL ——0.8V
Input Current IIN -10 — +10 μA0V ≤ VIN ≤ VDD
Output
High Output Voltage VOH VDD – 0.0 25 — — V DC Test
Low Ou tput Voltage VOL ——0.025VDC Test
Output Re si stanc e RO—912ΩIOUT = 10 mA, VDD = 18V
Peak Output Current IPK —1.5—AV
DD = 18V
Latch-Up Prote ction
Withstand Reverse Current IREV — >0.5 — A Duty cycle ≤ 2%, t ≤ 300 μs
VDD = 18V
Switching T ime (Note 1)
Rise Time tR——40nsFigure 4-1
Fall Time tF——40nsFigure 4-1
Delay Time tD1 ——40nsFigure 4-1
Delay Time tD2 ——60nsFigure 4-1
Power Supply
Power Supply Current IS—
——
—8.0
0.6 mA VIN = 3V (Both inputs)
VIN = 0V (Both inputs)
Note 1: Switching times ensured by design.
2: For V temperature range devices, the VIH (Min) limit is 2.0V.
Electrical Specifications: Unless otherwise noted, all parameters apply with 4.5V ≤ VDD ≤ 18V.
Parameters Sym Min Typ Max Units Conditions
Temperature Ranges
Specified Temperature Range (C) TA0—+70°C
Specified Temperature Range (E) TA-40 — +85 °C
Specified Temperature Range (V) TA-40 — +125 °C
Maximum Junction Tempe rature TJ— — +150 °C
Storage Temperature Range TA-65 — +150 °C
Package Thermal Resistances
Thermal Resistance, 8L-6x5 DFN θJA —33.2—°C/W
Thermal Resistance, 8L-MSOP θJA —206—°C/W
Thermal Resistance, 8L-PDIP θJA —125—°C/W
Thermal Resistance, 8L-SOIC θJA —155—°C/W
© 2006 Microchip Technology Inc. DS21422D-page 5
TC4426/TC4427/TC4428
2.0 TYPICAL PERFORMANCE CURVES
Note: Unless otherwise indicated, TA = +25ºC with 4.5V ≤ VDD ≤ 18V.
FIGURE 2-1: Rise Time vs. Supply
Voltage.
FIGURE 2-2: Rise Time vs. Capacitive
Load.
FIGURE 2-3: Rise and Fall Times vs.
Temperature.
FIGURE 2-4: Fall Time vs. Supply
Voltage.
FIGURE 2-5: Fall Time vs. Capacitive
Load.
FIGURE 2-6: Propagation Delay Time vs.
Supply Voltage.
Note: The g r ap hs and t ables prov id ed followi ng thi s n ote are a stat istic al summ ar y b as ed on a l im ite d n um ber of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
tRISE (nsec)
4681012
14 16 18
100 pF
470 pF
2200 pF
1500 pF
100
1000 pF
80
60
40
20
0
V
DD
(V)
100 1000 10,000
C (pF)
LOAD
5V
10V
15V
100
80
60
40
20
0
tRISE (nsec)
Time (nsec)
tRISE
Tem
p
erature
(
˚C
)
C = 1000 pF
LOAD
V = 17.5V
DD
60
–55 –35 5 25 45 65 85 105 125–15
tFALL
50
40
30
20
10
tFALL (nsec)
4681012
14 16 18
100 pF
470 pF
1000 pF
2200 pF
1500 pF
100
80
60
40
20
0
VDD (V)
100 1000 10,000
5V
10V
C (pF)
LOAD
100
80
60
40
20
0
tFALL (nsec)
15V
20
25
30
35
40
45
50
55
60
65
70
75
80
4 6 8 10 12 14 16 18
VDD (V)
Propagation Delay (nsec)
tD1
tD2
CLOAD = 1000 pF
VIN = 5V
TC4426/TC4427/TC4428
DS21422D-page 6 © 2006 Microchip Technology Inc.
Note: Unless otherwise indicated, TA = +25ºC with 4.5V ≤ VDD ≤ 18V.
FIGURE 2-7: Propagation Delay Time vs.
Input Amplitude.
FIGURE 2-8: Supply Current vs. Supply
Voltage.
FIGURE 2-9: Output Resistance (ROH) vs.
Supply Voltage.
FIGURE 2-10: Propagation Delay Time vs.
Temperature.
FIGURE 2-11: Supply Current vs.
Temperature.
FIGURE 2-12: Output Resistance (ROL) vs.
Supply Voltage.
10
15
20
25
30
35
40
45
50
55
60
0123456789101112
Input Amplitude (V)
Propagation Delay (nsec)
tD1
tD2
CLOAD = 1000 pF
VDD = 12V
4
I (mA)
QUIESCENT
186 8 10 12 14 16
0.1
Both Inputs = 1
Both Inputs = 0
V
DD
1
4681012
14 16 18
V
DD
R
DS(ON)
(Ω)
20
25
15
10
5
Worst Case @ TJ = +150˚C
Typical @ TA = +25˚C
10
15
20
25
30
35
40
45
-55 -35 -15 5 25 45 65 85 105 125
Temperature (ºC)
Delay Time (nsec)
tD1
tD2
CLOAD = 1000 pF
VIN = 5V
VDD = 18V
T
A
(˚C)
I
QUIESCENT
(mA)
4.0
3.5
3.0
2.5
2.0
–55 –35 –15 5 25 45 65 85 105 125
V = 18V
DD
Both Inputs = 1
4681012
14 16 1
8
20
V
DD
25
15
10
5
Worst Case @ T
J
= +150˚C
Typical @ TA = +25˚C
R
DS(ON)
(Ω)
© 2006 Microchip Technology Inc. DS21422D-page 7
TC4426/TC4427/TC4428
Note: Unless otherwise indicated, TA = +25ºC with 4.5V ≤ VDD ≤ 18V.
FIGURE 2-13: Supply Curr ent vs.
Capacitive Load .
FIGURE 2-14: Supply Curr ent vs.
Capacitive Load .
FIGURE 2-15: Supply Curr ent vs.
Capacitive Load .
FIGURE 2-16: Supply Current vs.
Frequency.
FIGURE 2-17: Supply Current vs.
Frequency.
FIGURE 2-18: Supply Current vs.
Frequency.
60
100 1000 10,000
ISUPPLY (mA)
2 MHz
600 kHz
200 kHz
20 kHz
900 kHz
C (pF)
LOAD
V = 18V
DD
50
40
30
20
10
0
100 1000 10,000
2 MHz
600 kHz
200 kHz
20 kHz
900 kHz
V = 12V
DD
C (pF)
LOAD
60
50
40
30
20
10
0
ISUPPLY (mA)
100 1000 10,000
2 MHz
200 kHz
20 kHz
600 kHz
900 kHz
V = 6V
DD
C (pF)
LOAD
60
50
40
30
20
10
0
ISUPPLY (mA)
10 100 1000
FREQUENCY
(
kHz
)
1000 pF
2200 pF
V = 18V
DD
100 pF
60
50
40
30
20
10
0
ISUPPLY (mA)
10 100 1000
FREQUENCY (kHz)
1000 pF
2200 pF
100 pF
V = 12V
DD
60
50
40
30
20
10
0
ISUPPLY (mA)
10 100 1000
FREQUENCY
(
kHz
)
1000 pF
2200 pF
100 pF
V = 6V
DD
60
50
40
30
20
10
0
ISUPPLY (mA)
TC4426/TC4427/TC4428
DS21422D-page 8 © 2006 Microchip Technology Inc.
Note: Unless otherwise indicated, TA = +25ºC with 4.5V ≤ VDD ≤ 18V.
FIGURE 2-19: Crossover Energy vs.
Supply Voltage.
4
A • sec
186 8 10 12 14 16
8
7
6
5
4
3
2
10–9
10–8
9
V
DD
Note: The values on this graph represent the loss
seen by both drivers in a package during one
complete cycle. For a single dri ver , divide the
stated values by 2. For a single transition of a
single driver, divide the st at ed value by 4.
© 2006 Microchip Technology Inc. DS21422D-page 9
TC4426/TC4427/TC4428
3.0 PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1.
TABLE 3-1: PIN FUNCTION TABLE (1)
3.1 Inputs A and B
MOSFET driver inputs A and B are high-impedance,
TTL/CMOS compatible inputs. These inputs also have
300 mV of hysteresis between the high and low
thresholds that prevents output glitching even when the
rise and fall time of the input signal is very slow.
3.2 Ground (GND)
Ground is the device return pin. The ground pin(s)
should have a low-impedance connection to the bias
supply source return. High peak currents will flow out
the ground pin(s) when the capacitive load is being
discharged.
3.3 Output A and B
MOSFET driver outputs A and B are low-impedance,
CMOS push-pull style outputs. The pull-down and pull-
up devices are of equal strength, making the rise and
fall times equivalent.
3.4 Supply Input (VDD)
The VDD in put is the bias s upply for the M OSFET driver
and is rated for 4.5V to 18V with respect to the ground
pin. The VDD input should be bypassed with local
ceramic capacitors. The value of these capacitors
should be chosen based on the capacitive load that is
being driven. A value of 1.0 μF is suggested.
3.5 Exposed Metal Pad
The expo sed metal p ad of the 6 x5 D F N packa ge i s n ot
internally connected to any potential. Therefore, this
pad can be connected to a ground plane or other
copper plane on a printed circuit board, to aid in heat
removal from the package.
8-Pin PDIP/
MSOP/SOIC 8-Pin
DFN Symbol Description
1 1 NC No connection
2 2 IN A Input A
33GNDGround
4 4 IN B Input B
55OUT BOutput B
66V
DD Supply input
77OUT AOutput A
8 8 NC No connection
— PAD NC Exposed Metal Pad
Note 1: Duplicate pins must be connected for proper operation.
TC4426/TC4427/TC4428
DS21422D-page 10 © 2006 Microchip Technology Inc.
4.0 APPLICATIONS INFORMATION
FIGURE 4-1: Switching Time Test Circuit.
CL = 1000 pF
0.1 μF
4.7 μF
Inverting Driver
Non-Inverting Driver
Input
VDD = 18V
Input
Output
tD1 tF
tR
tD2
Input: 100 kHz,
square wave,
tRISE = tFALL ≤ 10 ns
Output
Input
Output
tD1 tF
tR
tD2
+5V
10%
90%
10%
90%
10%
90%
VDD
0V
90%
10%
10% 10%
90%
+5V
VDD
0V
0V
0V
90%
3
27
6
45
© 2006 Microchip Technology Inc. DS21422D-page 11
TC4426/TC4427/TC4428
5.0 PACKAGING INFORMATION
5.1 Package Marking Information
XXXXXXXX
XXXXXNNN
YYWW
8-Lead PDIP (300 mil) Example:
TC4427
CPA256
0420
8-Lead SOIC (150 mil) Example:
XXXXXXXX
XXXXYYWW
NNN
TC4428
COA0420
256
8-Lead MSOP Example:
XXXXX
YWWNNN
4426C
420256
Legend: XX...X Customer specific information*
Y Year code (last digit of calendar year)
YY Year code (last 2 digits of calendar year)
WW Week code (week of January 1 is week ‘01’)
NNN Alphanumeric traceability code
Note: In the event th e full Mi crochi p pa rt numbe r cannot be marke d on one li ne, it wi ll
be carried ov er to the ne xt li ne thus lim iti ng th e nu mb er of av ai lab le c hara ct ers
for customer specific information.
*Standard device marking consists of Microchip part number, year code, week code, and traceability
code.
8-Lead DFN Example:
XXXXXXX
XXXXXXX
XXYYWW
NNN
TC4426
EMF
0420
256
TC4426/TC4427/TC4428
DS21422D-page 12 © 2006 Microchip Technology Inc.
8-Lead Plastic Dual Flat No Lead Package (MF) 6x5 mm Body (DFN-S) – Saw Singulated
© 2006 Microchip Technology Inc. DS21422D-page 13
TC4426/TC4427/TC4428
8-Lead Plastic Micro Small Outline Package (MS) (MSOP)
D
A
A1
L
c
α
A2
E1
E
p
Bn1
2
φ
β
F
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .010" (0.254mm) per side.
.037 REFFFootprint (Reference)
Notes:
Revised 07-21-05
*
Controlling Parameter
Mold Draft Angle Top
Mold Draft An g le Bo tto m
Foot Angle
Lead Width
Lead Thickness
β
α
c
B
φ
.003
.009 .006
.012
Dimension Limits
Overall Height
Molded Package Thickness
Molded Package Width
Overall Length
Foot Length
Standoff
Overall Width
Number of Pins
Pitch A
L
E1
D
A1
E
A2
.016 .024
.118 BSC
.118 BSC
.000
.030
.193 BSC
.033
MIN
p
n
Units
.026 BSC
NOM 8
INCHES
0.95 REF
-
-
.009
.016 0.08
0.22
0° 0.23
0.40
8°
MILLIMETERS
*
0.65 BSC
0.85
3.00 BSC
3.00 BSC
0.60
4.90 BSC
.043
.031
.037
.006
0.40
0.00
0.75
MIN
MAX NOM
1.10
0.80
0.15
0.95
MAX
8
--
-
15°5° - 15°5° -
JEDEC Equivalent: MO-187
0° - 8°
5°
5° -
-15°
15°
--
--
BSC: Basic Dimension. Theoretically exact value shown without tolerances.
REF: Reference Dimension, usually without tolerance, for information purposes only.
See ASME Y14.5M
See ASME Y14.5M
Drawing No. C04-111
TC4426/TC4427/TC4428
DS21422D-page 14 © 2006 Microchip Technology Inc.
8-Lead Plastic Dual In-line (P) – 300 mil (PDIP)
B1
B
A1
A
L
A2
p
α
E
eB
β
c
E1
n
D
1
2
Units INCHES*MILLIMETERS
Dimen sion Li mits MIN NOM MA X MI N NOM MA X
Number of Pins n88
Pitch p.100 2.54
Top to Seating Plane A .140 .155 .170 3.56 3.94 4.32
Molded Package Thickness A2 .115 .130 .145 2.92 3.30 3.68
Base to Seating Plane A1 .015 0.38
Shoulder to Shou lder Width E .300 . 313 .325 7.62 7.94 8.26
Molded Package Width E1 .240 .250 .260 6.10 6.35 6.60
Overall Len gth D .360 .37 3 .385 9.14 9.46 9.78
Tip to Seating Plane L .125 .130 .135 3.18 3.30 3.43
Lead Thi ckne ss c.008 .012 .015 0.20 0.29 0.38
Upper Lead Width B1 .045 .058 .070 1.14 1.46 1.78
Lower Lead Width B .014 .018 .022 0.36 0.46 0.56
Overall Row Spacing §eB .310 .370 .430 7.87 9.40 10.92
Mold Draft Angle Top α5 10 15 5 10 15
Mold Draft Angle Bottom β5 10 15 5 10 15
* Controlling Parameter
Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .010” (0.254mm) per side.
JEDEC Equivalent: MS-001
Drawing No. C04-018
§ Significant Characteristic
© 2006 Microchip Technology Inc. DS21422D-page 15
TC4426/TC4427/TC4428
8-Lead Plastic Small Outline (SN) – Narrow, 150 mil (SOIC)
Foot A ngle φ048048
1512015120
β
Mold Draft Angle Bottom 1512015120
α
Mold Draft Angle Top 0.510.420.33.020.017.013BLead Width 0.250.230.20.010.009.008
c
Lead Thickness
0.760.620.48.030.025.019LFoot Length 0.510.380.25.020.015.010hChamfer Distance 5.004.904.80.197.193.189DOverall Length 3.993.913.71.157.154.146E1Molded Pa ckag e Width 6.206.025.79.244.237.228EOverall Width 0.250.180.10.010.007.004A1Standoff §1.551.421.32.061.056.052A2M olded Pa ckag e Thickness 1.751.551.35.069.061.053AOverall Height 1.27.050
p
Pitch 88
n
Numb er of Pin s MAXNOMMINMAXNOMMINDimension Limits MILLIMETERSINCHES*Units
2
1
D
n
p
B
E
E1
h
L
β
c
45°
φ
A2
α
A
A1
* Controlling Parameter
Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .010” (0.254mm) per side.
JEDEC Equivalent: MS-012
Drawing No. C04-057
§ Significant Characteristic
TC4426/TC4427/TC4428
DS21422D-page 16 © 2006 Microchip Technology Inc.
NOTES:
© 2006 Microchip Technology Inc. DS21422D-page 17
TC4426/TC4427/TC4428
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
Sales and Support
Device: TC4426: 1.5A Dual MOSFET Driver, Inverting
TC4427: 1.5A Dual MOSFET Driver, Non-Inverting
TC4428: 1.5A Dual MOSFET Driver, Compl ementary
Temperature Range: C = 0°C to +70°C (PDIP and SOIC only)
E = -40°C to +85°C
V = -40°C to +125°C
Package: MF = Dual, Flat, No-Lead (6X5 mm Body), 8-lead
MF713 = Dual, Flat, No-Lead (6X5 mm Body), 8-lead
(Tape and Reel )
OA = Plastic SOIC, (150 mil Body), 8-lead
OA713 = Plastic SOIC, (150 mil Body), 8-lead
(Tape and Reel )
PA = Plastic DIP (300 mil Body), 8-lead
UA = Plastic Micro Small Outline (MSOP), 8-lead
UA713 = Plastic Micro Small Outline (MSOP), 8-lead
(Tape and Reel )
Examples:
a) TC4426COA: 1.5A Dual Inverting
MOSFET driver,
0°C to +70°C
SOIC package.
b) TC4426EUA: 1.5A Dual Inverting
MOSFET driver,
-40°C to +85°C.
MSOP package.
c) TC4426EMF: 1.5A Dual Inverting
MOSFET driver,
-40°C to +85°C,
DFN package.
a) TC4427CPA: 1.5A Dual Non-Inverting
MOSFET driver,
0°C to +70 ° C
PDIP package.
b) TC4427EPA: 1.5A Dual Non-Inverting
MOSFET driver,
-40°C to +85°C
PDIP package.
a) TC4428COA713:1.5A Dual Complementary
MOSFET driver,
0°C to +70°C,
SOIC package,
Tape and Reel.
b) TC4428EMF: 1.5A Dual Complementary,
MOSFET driver,
-40°C to +85°C
DFN package.
PART NO. XXX
PackageTemperature
Range
Device
XXX
Tape & Reel
X
PB Free
Data Sheets
Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and
recommended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following:
1. Your local Microchip sales office
2. T he Microchip Corporate Literature Center U.S. FAX: (480) 792-7277
3. The Microchip Worldwide Site (www.microchip.c om)
Please specify which device, revision of silicon and Dat a Sheet (include Literature #) you are using.
Customer Notification System
Register on our web site (www.m icrochip.com /cn) to receive the most current information on our products.
TC4426/TC4427/TC4428
DS21422D-page 18 © 2006 Microchip Technology Inc.
NOTES:
© 2006 Microchip Technology Inc. DS21422D-page 19
Information contained in this publication regarding device
applications and the like is provided only for your convenience
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR WAR-
RANTIES OF ANY KIN D WHETHER EXPRESS OR IMPLIED ,
WRITTEN OR ORAL, STATUTORY OR OTHERWISE,
RELATED TO THE INFORMATION, INCLUDING BUT NOT
LIMITED TO ITS CONDITION, QUALITY, PERFORMANCE,
MERCHANTABILITY OR FITNESS FOR PURPOSE.
Microchip disclaims all liability arising from this information and
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Trademarks
The Microchip name and logo, the Microchip logo, Accuron,
dsPIC, KEELOQ, microID, MPLAB, PIC, PICmicro, PICST ART ,
PRO MATE, PowerSmart, rfPIC, and SmartShunt are
registered trademarks of Microchip Technology Incorporated
in the U.S.A. and other countries.
AmpLab, FilterLab, Migratable Memory, M XDEV, MXLAB,
PICMASTER, SEEVAL, SmartSensor and The Embedded
Control Solutions Company are registered trademarks of
Microchip Technology In corporated in the U.S.A.
Analog-for-the-Digital Age, Application Maestro, dsPICDEM,
dsPICDEM.net, dsPICworks, ECAN, ECONOMONITOR,
FanSense, FlexROM, fuzzyLAB, In-Circuit Serial
Programming, ICSP, ICEPI C, Linear Active Thermist or,
MPASM , MPLIB, MP LINK , MPSI M, PIC kit, PIC DEM,
PICDEM.net, PICLAB, PICtail, PowerCal, PowerInfo,
PowerMate, Powe rTool, Real ICE, rfLAB, rfPICDEM, Select
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WiperLock and Zena are trademarks of Microchip Technology
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SQTP is a service mark of Microchip Technology Incorporated
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All other trademarks mentioned herein are property of their
respective companies.
© 2006, Microchip Technology Incorporated, Printed in the
U.S.A., All Rights Reserved.
Printed on recycled paper.
Note the following details of the code protection feature on Microchip devices:
• Microchip products meet the specification contained in their particular Microchip Data Sheet.
• Microchip believes that it s family of products is one of the most secure families of it s kind on the market today, when used in the
intended manner and under normal conditions.
• There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
• Microchip is willing to work with the customer who is concerned about the integrity of their code.
• Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is c onstantly evolving. We a t Microchip are commit ted to continuously improving the code protect ion featur es of our
products. Attempts to break Microchip’ s code protection f eature may be a violati on of t he Digit al Millennium Copyright Act. If such act s
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Microchip received ISO/TS-16949:2002 quality system certification for
its worldwide headquarters, design and wafer fabrication facilities in
Chandler and Tempe, Arizona and Mountain View, California in
October 2003. The Company’s quality system processes and
procedures are for its PICmicro® 8-bit MC Us, KEELOQ® code hopping
devices, Serial EEPROMs, micro peripherals, nonvolat ile memory and
analog products. In addition, Microchip’s quality system for the design
and manufacture of development systems is ISO 9001:2000 certified.
DS21422D-page 20 © 2006 Microchip Technology Inc.
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