V
RRM
= 600 V - 1200 V
I
F
=150 A
Features
• High Surge Capability DO-8 Package
• Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
3. Stud is base.
Parameter Symbol S150J (R) S150K (R) Unit
Re
etitive
eak reverse volta
eV
RRM
600 800 V
• Types from 600 V to 1200 V V
RRM
Silicon Standard
Recover
Diode
Conditions
1200
S150J thru S150QR
S150Q (R)
1000
S150M (R)
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
2. Reverse polarity (R): Stud is anode.
RMS reverse voltage V
RMS
420 560 V
DC blocking voltage V
DC
600 800 V
Continuous forward current I
F
150 150 A
Operating temperature T
j
-55 to 150 -55 to 150 °C
Storage temperature T
stg
-55 to 150 -55 to 150 °C
Parameter Symbol S150J (R) S150K (R) Unit
Diode forward voltage 1.2 1.2
10 10 μA
15 15 mA
Thermal characteristics
Thermal resistance, junction -
case R
thJC
0.35 0.35 °C/W
-55 to 150 -55 to 150
T
C
= 25 °C, t
p
= 8.3 ms
840
12001000
Surge non-repetitive forward
current, Half Sine Wave I
F,SM
-55 to 150
S150Q (R)
10 10
S150M (R)
0.35
V
R
= 600 V, T
j
= 150 °C
0.35
1.2 1.2
9
V
R
= 600 V, T
j
= 25 °C
I
F
= 150 A, T
j
= 25 °C
T
C
≤ 180 °C
Conditions
700
3140 3140
-55 to 150
150 150
15
A3140
Reverse current I
R
V
F
3140
V
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Feb 2016 Latest version of this datasheet at: www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/
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