1
TO-220F
Item Symbol Ratings Unit Remarks
Drain-source voltage V DS 450
VDSX 450
Continuous drain current ID4.3
Pulsed drain current ID(puls] ±17.2
Gate-source voltage VGS ±30
Repetitive or non-repetitive IAR 4.3
Non-repetitive
Maximum avalanche energy EAS 211
Repetitive
Maximum avalanche energy 2.1
Maximum drain-source dV/dt dVDS/dt 20
Peak diode recovery dV/dt dV/dt 5
Max. power dissipation PD2.16
21
Operating and storage Tch +150
temperature range Tstg
Isolation voltage VISO *6 2
Electrical characteristics (Tc =25°C unless otherwise specified)
Thermalcharacteristics
2SK3917-01MR FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Features
High speed switching Low on-resistance
No secondary breadown Low driving power
Avalanche-proof
Applications
Switching regulators DC-DC converters
UPS (Uninterruptible Power Supply)
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item Symbol Test Conditions
Zero gate voltage drain current IDSS VDS=450V VGS=0V
VDS=360V VGS=0V
VGS=±30V
ID=2.1A VGS=10V
ID=2.1A VDS=25V
VCC=300V ID=2.1A
VGS=10V
RGS=10 Ω
V
V
µA
mA
nA
Ω
S
pF
nC
V
ns
µC
ns
Min. Typ. Max. Units
Thermal resistance Rth(ch-c) channel to case
Rth(ch-a) channel to ambient 5.952
58.0 °C/W
°C/W
Symbol
V(BR)DSS
VGS(th)
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
VSD
trr
Qrr
Item
Drain-source breakdown voltage
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
ID= 250µA VGS=0V
ID= 250µA VDS=VGS
Tch=25°C
Tch=125°C
VDS=0V
VDS=25V
VGS=0V
f=1MHz
VCC=225V
ID=4.3A
VGS=10V
IF=4.3A VGS=0V Tch=25°C
IF=4.3A VGS=0V
-di/dt=100A/µs Tch=25°C
V
V
A
A
V
A
mJ
mJ
kV/µs
kV/µs
W
W
°C
°C
kVrms
450
3.0 5.0
25
2.0
100
1.30 1.60
1.8 3.5
330 500
50 75
24
11 17.5
5.5 8.5
23 34.5
5.0 8.0
13.0 20
6.0 9.0
2.5 3.8
1.00 1.50
280
1.6
-55 to +150
Outline Drawings [mm]
Equivalent circuit schematic
Gate(G)
Source(S)
Drain(D)
Super F AP-G Series 200509
=
<
VGS=-30V
Note *1
Note *2
Note *3
VDS 450V
Note *4
Ta=25°C
Tc=25°C
t=60sec, f=60Hz
=
<
=
<
Note *1 Tch 150°C
Note *2 Starting Tch=25°C, IAS=1.8A, L=119mH, VCC=45V, RG=50Ω
EAS limited by maximum channel temperrature and avalanche current.
See to ‘Avalanche Energy’ graph.
Note *3 Repetitve rating : Pulse width limited by maximum channel temperature.
See to ‘Transient Thermal impedance’ graph.
Note *4 IF -ID, -di/dt=50A/µs, Vcc BVDSS, Tch 150 °C
=
<=
<
=
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Characteristics
2SK3917-01MR FUJI POWER MOSFET
0 25 50 75 100 125 150
0
5
10
15
20
25
30
Allowable Power Dissipation
PD=f(Tc)
PD [W]
Tc [°C]
0 2 4 6 8 10 12 14 16 18 20 22
0
1
2
3
4
5
6
7
8
9
7.0V
20V
10V
8.0V
6.5V
6.0V
ID [A]
VDS [V]
Typical Output Characteristic s
ID=f (VDS):80 µs pulse test,Tch=25°C
VGS=5.5V
3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0
0.01
0.1
1
10
ID[A]
VGS[V]
Typical Transfer Characteristic
ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25°C
0.01 0.1 1 10
0.1
1
10
100
gfs [S]
ID [A]
Typical Transconductance
gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25°C
0246810
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
8V
RDS(on) [ Ω ]
ID [A]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80 µs pulse t est,Tch=25°C
10V
20V
6.0V 6.5V 7.0V
VGS=
5.5V
-50 -25 0 25 50 75 100 125 150
0
1
2
3
4
5
RDS(on ) [ Ω ]
Tch [°C]
typ.
max.
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=2.1A,VGS=10V
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2SK3917-01MR FUJI POWER MOSFET
-50 -25 0 25 50 75 100 125 150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
max.
min.
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250uA
VGS(th) [V]
Tch [°C] 0 5 10 15 20 25 30
0
2
4
6
8
10
12
14
16
18
20
Qg [nC]
Typical Gate Charge Characteristics
VGS=f(Qg):ID=4.3A,Tch=25°C
VGS [V]
360V
225V
Vcc= 90V
10-1 100101102103
100f
1p
10p
100p
1n
C [F]
VDS [V]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
Crss
Coss
Ciss
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00
0.1
1
10
100
IF [A]
VSD [V]
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80 µs pulse test,Tch=25°C
10-1 100101
100
101
102
Typical Switching Characteri stics vs. ID
t=f(ID):Vcc=300V,VGS=10V,RG=10Ω
td(on)
tr
tf
td(off)
t [ns]
ID [A]
0 25 50 75 100 125 150
0
50
100
150
200
250
300
IAS=1.8A
IAS=4.3A
IAS=2.6A
EAS [mJ]
starting Tch [°C]
Maximum Avalanche Energy vs . star ti ng Tch
EAS=f (sta rti ng Tc h) :Vcc = 45V
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2SK3917-01MR FUJI POWER MOSFET
http://www.fujielectric.co.jp/fdt/scd/
10-8 10-7 10-6 10-5 10-4 10-3 10-2
10-2
10-1
100
101
102
Single Pulse
Maximum Avalanche Current Pulsewi dth
IAV=f(tAV):starting Tch=25°C,Vcc=45V
Aval an c he Current I AV [A]
tAV [sec]
10-6 10-5 10-4 10-3 10-2 10-1 100
10-2
10-1
100
101
102
Transient Thermal Impedance
Zth(ch-c)=f(t):D=0
Zth (ch-c) [oC/W]
t [sec]
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