4MN10CH
No. A0268-1/3
Ordering number : ENA0268
D2005AA MS IM TB-00001940
4MN10CH NPN Epitaxial Planar Silicon Transistor
High-Frequency General-Purpose
Amplifier Applications
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Features
•High fT : fT=400MHz (typ).
•High breakdown voltage : VCEO≥200V.
•Small reverse transfer capacitance and excellent high-frequnecy characteristic : Cre=1.4pF.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage VCBO 200 V
Collector-to-Emitter Voltage VCEO 200 V
Emitter-to-Base Voltage VEBO 4V
Collector Current IC100 mA
Collector Current (Pulse) ICP 200 mA
Collector Dissipation PCMounted on a ceramic board (600mm2✕0.8mm) 600 mW
Junction Temperature Tj 150 °C
Storage Temperature Tstg --55 to +150 °C
Electrical Characteristics at Ta=25 °C
Ratings
Parameter Symbol Conditions min typ max Unit
Collector Cutoff Current ICBO VCB=150V, IE=0A 0.1 µA
Emitter Cutoff Current IEBO VEB=2V, IC=0A 1.0 µA
DC Current Gain hFE1V
CE=10V, IC=10mA 60 200
hFE2V
CE=10V, IC=60mA 20
Gain-Bandwideth Product fTVCE=30V, IC=30mA 400 MHz
Collector-to-Emitter Saturation Voltage VCE(sat) IC=30mA, IB=3mA 0.6 V
Collector-to-Base Breakdown Voltage V(BR)CBO IC=10µA, IE=0A 200 V
Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=1mA, RBE=∞200 V
Emitter-to-Base Breakdown Voltage V(BR)EBO IE=100µA, IC=0A 4 V
Output Capacitance Cob VCB=30V, f=1MHz 1.8 pF
Reverse T ransfer Capacitance Cre VCB=30V, f=1MHz 1.4 pF
Marking : GL
4MN10CH
No. A0268-2/3
IT10191
IC -- VCE
Collector-to-Emitter Voltage, VCE -- V
Collector Current, IC -- mA
0 4 8 121620
0
10
20
30
40
50
IB=0µA
500µA
400µA
350µA
300µA
250µA
200µA
150µA
100µA
50µA
450µA
IC -- VBE
Base-to-Emitter Voltage, VBE -- V
Collector Current, IC -- mA
0 0.2 0.4 0.6 0.8 1.0 1.2
0
20
40
60
80
100
120
VCE=10V
1.0 710 7100
35 3522
7
1000
100
5
7
5
3
3
2
fT -- IC
Collector Current, IC -- mA
Gain-Bandwidth Product, fT -- MHz
VCE=30V
100
10
hFE -- IC
Collector Current, IC -- mA
DC Current Gain, hFE
235757 3
25
10 72
1001.0
2
3
5
7
7
2
3
5
VCE=10V
IT10192
IT10193 IT10194
2.9
1.9
0.05
12
3
0.2
0.7 0.9 2.8
1.6
0.6 0.6
0.2
0.4 0.15
1 : Base
2 : Emitter
3 : Collector
SANYO : CPH3
Package Dimensions
unit : mm
7015-003
4MN10CH
No. A0268-3/3
PS
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer’s
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer’s products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of December, 2005. Specifications and information herein are subject
to change without notice.
710 27
100
3
1.0 23 5557
1.0
7
10
5
7
5
3
2
2
Cob -- VCB
Collector-to-Base Voltage, VCB -- V
Output Capacitance, Cob -- pF
f=
1MHz
710 27
100
3
1.0 23 5557
1.0
7
10
5
7
5
3
2
2
Cre -- VCB
Collector-to-Base Voltage, VCB -- V
Reverse Transfer Capacitance, Cre -- pF
f=
1MHz
Ambient Temperature, Ta -- °C
PC -- Ta
Collector Dissipation, PC -- W
ITR11804
VCE(sat) -- IC
Collector Current, IC -- mA
510
22
1.0 33
55
77 100
7
0.1
1.0
5
3
5
7
7
2
2
IC / IB=1
0
0 20 40 60 80 100 120 140 160
0
0.6
0.3
0.4
0.5
0.2
0.1
0.7
Mounted on a ceramic board (600mm
2
✕0.8mm)
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
IT10195 IT10196
IT10197
